JPS57167632A - Surface treating method for semiconductor substrate - Google Patents

Surface treating method for semiconductor substrate

Info

Publication number
JPS57167632A
JPS57167632A JP56043806A JP4380681A JPS57167632A JP S57167632 A JPS57167632 A JP S57167632A JP 56043806 A JP56043806 A JP 56043806A JP 4380681 A JP4380681 A JP 4380681A JP S57167632 A JPS57167632 A JP S57167632A
Authority
JP
Japan
Prior art keywords
substrate
gas
ions
torr
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56043806A
Other languages
Japanese (ja)
Other versions
JPS6313341B2 (en
Inventor
Hiroshi Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56043806A priority Critical patent/JPS57167632A/en
Publication of JPS57167632A publication Critical patent/JPS57167632A/en
Publication of JPS6313341B2 publication Critical patent/JPS6313341B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To treat the surface of the substrate without using a noxious gas by exposing the surface to the plasma of a compound containing Cl and thermally oxidizing the surface in a method making Cl<-> ions contaon into SiO2. CONSTITUTION:Parallel slat electrodes 1, 2 connected to a high-frequency power supply 3 and the Si substrate 4 arranged onto the electrode 1 are disposed into a reaction chamber. An indoor atmosphere is the mixed gas of a gas such as the O2 of 1 Torr and a gas such as the CCl2F2 of 0.01 Torr. When the high- frequency power of 13.56MHz and 500W is applied to the electrodes 1, 2 by the power supply 3, the mixed gas is changed into plasma, and Cl<-> ions are adsorbed onto the surface of the Si substrate. When the surface is exposed for approximately one min. under said condition and thermally oxidized through a normal method, SiO2 containing Cl<-> ions is formed onto the surface of the Si substrate.
JP56043806A 1981-03-25 1981-03-25 Surface treating method for semiconductor substrate Granted JPS57167632A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56043806A JPS57167632A (en) 1981-03-25 1981-03-25 Surface treating method for semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56043806A JPS57167632A (en) 1981-03-25 1981-03-25 Surface treating method for semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS57167632A true JPS57167632A (en) 1982-10-15
JPS6313341B2 JPS6313341B2 (en) 1988-03-25

Family

ID=12673979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56043806A Granted JPS57167632A (en) 1981-03-25 1981-03-25 Surface treating method for semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS57167632A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119841A (en) * 1982-12-27 1984-07-11 Fujitsu Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119841A (en) * 1982-12-27 1984-07-11 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6313341B2 (en) 1988-03-25

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