JPS56169328A - Formation of electrode for semiconductor - Google Patents

Formation of electrode for semiconductor

Info

Publication number
JPS56169328A
JPS56169328A JP7258580A JP7258580A JPS56169328A JP S56169328 A JPS56169328 A JP S56169328A JP 7258580 A JP7258580 A JP 7258580A JP 7258580 A JP7258580 A JP 7258580A JP S56169328 A JPS56169328 A JP S56169328A
Authority
JP
Japan
Prior art keywords
electrode
cds
cds2
sintered layer
nh4cl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7258580A
Other languages
Japanese (ja)
Other versions
JPS6349393B2 (en
Inventor
Katsuo Yamamoto
Katsuyoshi Iguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kohden Co Ltd
Original Assignee
Kohden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kohden Co Ltd filed Critical Kohden Co Ltd
Priority to JP7258580A priority Critical patent/JPS56169328A/en
Publication of JPS56169328A publication Critical patent/JPS56169328A/en
Publication of JPS6349393B2 publication Critical patent/JPS6349393B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To enable to form an electrode having an excellent ohmic contact by a method wherein a semiconductor sintered layer is formed on a heat-proof insulating substrate using a fusing agent which generetes oxidized gas. CONSTITUTION:In CdS powder or in the mixed powder of CdS and CdSe, NH4Cl as a solvent and an activation are added, and they are suspended in pure water. The above is applied on a ceramic substrate 1 and after it has been dried up, a sintering is performed. When the sintering is performed at a high temperature, the NH4Cl is decomposed and an oxidizing HCl gas is generated in a large quantity. A vapor-phase etching is performed on the surface of the CdS2 immediately after it has been sintered. At this time, S component adhered on the surface of the CdS2 is chemically reacted to the HCl gas and is removed from the surface of the CdS2. On the CdS sintered layer 2 thus formed, an electrode 3 consisting of conductive paste is printed in the air. When an electrode 3 consisting of condutive paste is printed in the air on the CdS sintered layer 2 thus formed, the electrode having an excellent ohmic contact can be formed.
JP7258580A 1980-05-30 1980-05-30 Formation of electrode for semiconductor Granted JPS56169328A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7258580A JPS56169328A (en) 1980-05-30 1980-05-30 Formation of electrode for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7258580A JPS56169328A (en) 1980-05-30 1980-05-30 Formation of electrode for semiconductor

Publications (2)

Publication Number Publication Date
JPS56169328A true JPS56169328A (en) 1981-12-26
JPS6349393B2 JPS6349393B2 (en) 1988-10-04

Family

ID=13493596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7258580A Granted JPS56169328A (en) 1980-05-30 1980-05-30 Formation of electrode for semiconductor

Country Status (1)

Country Link
JP (1) JPS56169328A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61211918A (en) * 1985-03-15 1986-09-20 日本電気株式会社 Coordinate type menu keyboard
JP2010027444A (en) * 2008-07-22 2010-02-04 Fuji Electric Retail Systems Co Ltd Push-button keyboard switch

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01279084A (en) * 1988-04-21 1989-11-09 Agency Of Ind Science & Technol Apparatus for feeding fine powder, viscous fluid and the like
JPH02134889U (en) * 1989-04-04 1990-11-08

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61211918A (en) * 1985-03-15 1986-09-20 日本電気株式会社 Coordinate type menu keyboard
JP2010027444A (en) * 2008-07-22 2010-02-04 Fuji Electric Retail Systems Co Ltd Push-button keyboard switch

Also Published As

Publication number Publication date
JPS6349393B2 (en) 1988-10-04

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