JPS6421925A - Resist removing method - Google Patents
Resist removing methodInfo
- Publication number
- JPS6421925A JPS6421925A JP17700387A JP17700387A JPS6421925A JP S6421925 A JPS6421925 A JP S6421925A JP 17700387 A JP17700387 A JP 17700387A JP 17700387 A JP17700387 A JP 17700387A JP S6421925 A JPS6421925 A JP S6421925A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- substrate
- gas
- electric field
- projected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To exclude the problem of contamination due to movable ions, by heating resist on a substrate, supplying a gas including oxygen, projecting ultraviolet rays on the resist or the gas, and applying a DC electric field directed toward the resist applied surface from the center of the substrate. CONSTITUTION:Resist 1, which is applied on a substrate 1, is heated. A gas including oxygen is made to flow in a space, in which the substrate 2 is placed. Ultraviolet rays are projected at least on the resist 1 or said gas. A DC electric field directed toward the resist applied surface from the center of the substrate is applied. For example, the Si substrate 2 having SiO2 of 20nm, on which the photoresist film 1 is applied to a thickness of 1mum, is arranged in a quartz chamber 3. Electrodes 4 and 5 are provided. The electric field of 1V/cm is applied. A heater is enclosed in the electrode 4. Oxygen including 5% ozone is made to flow at the substrate temperature of 200 deg.C. Light from a high luminance ultraviolet-ray lamp is projected. Thus the resist is removed. Since the mixing of movable ions can be prevented in this way, a MOS element, whose movable ion density is 5X10<9> pieces/cm<2> or less can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17700387A JPS6421925A (en) | 1987-07-17 | 1987-07-17 | Resist removing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17700387A JPS6421925A (en) | 1987-07-17 | 1987-07-17 | Resist removing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6421925A true JPS6421925A (en) | 1989-01-25 |
Family
ID=16023473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17700387A Pending JPS6421925A (en) | 1987-07-17 | 1987-07-17 | Resist removing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6421925A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02127648A (en) * | 1988-11-08 | 1990-05-16 | Matsushita Electric Ind Co Ltd | Production of master disk for optical disk |
| JPH04230018A (en) * | 1990-12-27 | 1992-08-19 | Orc Mfg Co Ltd | Photo-ashing device of photoresist |
| JP2007287645A (en) * | 2006-03-22 | 2007-11-01 | Furukawa Electric Co Ltd:The | Grommet |
| CN110275389A (en) * | 2018-03-16 | 2019-09-24 | 三星电子株式会社 | The method for manufacturing integrated circuit device |
-
1987
- 1987-07-17 JP JP17700387A patent/JPS6421925A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02127648A (en) * | 1988-11-08 | 1990-05-16 | Matsushita Electric Ind Co Ltd | Production of master disk for optical disk |
| JPH04230018A (en) * | 1990-12-27 | 1992-08-19 | Orc Mfg Co Ltd | Photo-ashing device of photoresist |
| JP2007287645A (en) * | 2006-03-22 | 2007-11-01 | Furukawa Electric Co Ltd:The | Grommet |
| CN110275389A (en) * | 2018-03-16 | 2019-09-24 | 三星电子株式会社 | The method for manufacturing integrated circuit device |
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