CN101390185B - Vacuum reaction chamber with x-lamp heater - Google Patents
Vacuum reaction chamber with x-lamp heater Download PDFInfo
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- CN101390185B CN101390185B CN2006800340350A CN200680034035A CN101390185B CN 101390185 B CN101390185 B CN 101390185B CN 2006800340350 A CN2006800340350 A CN 2006800340350A CN 200680034035 A CN200680034035 A CN 200680034035A CN 101390185 B CN101390185 B CN 101390185B
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B44—DECORATIVE ARTS
- B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
- B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
- B44C1/22—Removing surface-material, e.g. by engraving, by etching
Abstract
Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid locatedbetween the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.
Description
Technical field
The embodiment of the invention is relevant with the manufacturing integrated circuit substantially.Clearer and more definite, the embodiment of the invention is relevant with the apparatus and method for that is used for the electron beam treatment base material.
Background technology
Introduce this kind assembly before many decades first, the integrated circuit physical dimension is just dwindled significantly.Integrated circuit is followed the rule (so-called Moore's Law) that 2 years/size reduces by half substantially since then, and the component count that means on the wafer every two years doubles.Today manufacturing equipment conventional produce assembly tool 0.13 μ m with in addition the characteristic size of 0.1 μ m, and equipment can be produced the more assembly of small-feature-size of tool soon tomorrow.
The film that the assembly physical dimension is dwindled continuously to tool low-k (k) value produces infringement, because of the capacitive coupling between adjacent metal lines must reduce with the size of components on the further reduction integrated circuit.Clearer and more definite, insulator tool low-k is being preferable less than about 4.0.The insulator example of tool low-k comprises spin-on glasses (spin-on glass) that commerce can buy, mixes fluorine silex glass (FSG) and polytetrafluoroethylene (PTFE).
Recently developed the organosilicone film of providing less than about 3.5 k value.A kind of method that has been used to develop the low dielectric constant organosilicon film is the admixture of gas deposit film of self-contained one or more organo-silicon compound, and then the reprocessing deposit film with the auto-deposition thin film removing volatile or thermally labile species such as organic functional group.Volatile or the thermally labile species of auto-deposition thin film removing can produce the hole that can reduce the thin-film dielectric constant in film, this is for the dielectric constant of air tool about 1.
Electron beam treatment by successful Application at the reprocessing deposit film and in film, produce hole, it also improves the film engineering properties.Yet the design of existing electron beam chamber then by several significant drawbacks hardship.At first, existing electron beam chamber designs meeting tool negative side-effects on base material, as loss of base material semiconductor-on-insulator assembly or destruction.For example: after electron beam treatment, observe high gate oxide electric leakage and voltage threshold drift (voltage threshold (VT) shift).It is generally acknowledged that the electron beam treatment membership produces excessive negative electrical charge infringement base material (because of the electron bombard base material) on base material.The excessive negative electrical charge that produces when making assembly can cause charge current, and it can form unwanted current path in the base material several regions, when assembly operation, is generally via insulation of newly setting up current path and leakage current, can destroy the assembly on the base material.The second, existing electron beam chamber design can cause base material heavy metal pollution.The 3rd, because of whole substrate surface lacks temperature homogeneity, it is not good to demonstrate the base material internal contraction.Shrinking uniformity (shrinkage uniformity) is a kind of expression of film speciality, as hardness.
Therefore the apparatus and method for that improves to base material deposited layer electron beam treatment still has demand.
Summary of the invention
Therefore the invention provides the apparatus and method for that can address the above problem.
The embodiment of the invention provides a kind of electron beam equipment of handling base material.In one embodiment, this electron beam equipment that is used to handle base material comprises a vacuum chamber.This vacuum chamber comprises an electron source.Electron source comprises an anode, a low pressure source and a high-voltage power supply, and this low pressure source is linked to anode, and high-voltage power supply is linked to negative electrode.Vacuum chamber more comprises a substrate support and a grid, and the configuration of this grid is in order to when the electron beam treatment, reduces the infringement of base material, and wherein grid is positioned between between anode and substrate support.Bias generator is to be linked to grid.In one embodiment, vacuum chamber more comprises at least one thermocouple assembly.Among another embodiment, thermocouple assembly comprises the elastomeric element of ceramic material system.Among another embodiment, ceramic material is to be selected from the group that is made up of carborundum, silicon nitride, aluminium nitride, rhinestone and its composition.
Among another embodiment, then provide a kind of when electron beam treatment, reduce the method for the charge damage of base material.This method comprises provides a Room, and it comprises a gate configuration between anode and substrate support, and this chamber provides bias generator to this grid, the bias generator condition that is wherein provided be enough to all or part of in and the electron beam electric charge on the base material.In one embodiment, this condition is enough to reduce the base material charge current less than about 0.005mA.In one embodiment, bias generator is a Dc bias.Among another embodiment, bias generator is a rf bias.Among another embodiment, base material comprises a low dielectric constant films, and the electron beam treatment of this low dielectric constant films is contained in formation hole in the low dielectric constant films.In one embodiment, bias voltage is between about 3V and about 40V.Among another embodiment, bias voltage is between pact-3V and pact-30V.
Among another embodiment, provide a kind of electron beam equipment that is used to handle base material.Vacuum chamber comprises an electron source.This electron source comprises negative electrode that is linked to the high voltage source supply and the anode that is linked to the low-tension supply supply.Vacuum chamber more comprises a substrate support and a grid, and this grid position is between anode and substrate support, and wherein grid is linked to bias generator and is positioned at cross light heater under this substrate support.In one embodiment, vacuum chamber more comprises at least one thermocouple assembly, and wherein at least one thermocouple assembly comprises an elastomeric element, and it disposes in order to the contact substrate surface, and wherein elastomeric element comprises ceramic material.Among another embodiment, substrate support comprises at least one thermocouple assembly.In one embodiment, thermocouple assembly comprises elastomeric element, and this elastomeric element comprises ceramic material.
Description of drawings
For making the above-mentioned feature gimmick of the present invention can be by detailed understanding, simplified summary specific embodiment of the present invention be in last, and it can be with reference to embodiment, and some of them are then illustrated in the additional icon.Yet it should be noted that only diagram exemplary embodiments of the present invention but do not limit its scope of the additional icon, the present invention also admits other equivalent embodiment.
Fig. 1 is the electron beam equipment representative graph according to the embodiment of the invention;
When Fig. 2 A is illustrated at according to the electron beam treatment of the embodiment of the invention, base material charge current and substrate bias figure;
When Fig. 2 B is illustrated at according to the electron beam treatment of the embodiment of the invention, base material charge current and substrate bias figure;
Fig. 3 is electron beam equipment representative graph according to another embodiment of the present invention;
Fig. 4 A icon is during according to the electron beam treatment of the embodiment of the invention, base material electric current and grid bias figure;
Fig. 4 B icon is during according to the electron beam treatment of the embodiment of the invention, base material electric current and grid bias figure;
Fig. 5 is electron beam equipment representative graph according to another embodiment of the present invention;
Fig. 6 is electron beam equipment representative graph according to another embodiment of the present invention;
Fig. 7 is the perspective view of the embodiment of thermocouple assembly;
Fig. 8 is the perspective view of embodiment that is shown in the thermocouple tip of Fig. 7;
Fig. 9 is the representative graph that the demonstration thermocouple assembly that is shown in Fig. 7 captures the line 9-9 that is shown in Fig. 7;
Figure 10 A is the thermocouple tip synoptic diagram of contact substrate top at the beginning;
Figure 10 B is the synoptic diagram behind the most advanced and sophisticated contact substrate of thermocouple;
Figure 11 is the heater perspective view of an embodiment;
Figure 12 A icon uses the contraction uniformity of the 300mm base material of old-fashioned heater design;
Figure 12 B icon uses the contraction uniformity of the 300mm base material of embodiment of the invention heater;
Figure 13 is the perspective view of another embodiment of heater;
Figure 14 is the perspective view of another embodiment of heater;
Figure 15 is the perspective view of grid embodiment of the present invention;
Figure 16 is the perspective view of another embodiment of grid of the present invention;
Figure 17 is the representative graph of electron beam equipment according to another embodiment of the present invention;
Figure 18 is the representative graph of the low parts (lower portion) according to the electron beam equipment of the embodiment of the invention; And
Figure 19 is the bottom view according to the low parts of the electron beam equipment of the embodiment of the invention.
The primary clustering symbol description
9 line 9-9100 electron beam equipments
102 vacuum chambers, 104 negative electrodes
The 108 high voltage source supplies of 106 anodes
110 variable low-tension supplies are supplied 112 variable stiffness steam leak-off valves
113 heaters or heater 114 substrate support rings
116 bias generators, 117 base materials
118 galvanometer, 120 ionisation region
122 valency ions 124 quicken the place
126 electronics, 128 nominal price ions
132 secondary electrons, 150 controllers
160 first thermocouples, 170 second thermocouples
300 electron beam equipments, 330 grids
332 sidewalls, 334 ground connection pin
336 bias generators, 338 grid controllers
400 Figure 40,2 points
410 Figure 41,2 lines
414 lines, 416 points
418: 500 electron beam equipments
542 imports of 540 plasma flood guns
600 treatment chamber, 620 vacuum chambers
622 large area cathodes, 624 high voltage insulators
626 grid anodes, 628 negative electrodes cover insulator
629 variable high voltage sourcies are supplied 630 target surfaces or substrate support
631 variable low-tension supplies are supplied 632 variable steam leak-off valves
The place is quickened in 634 holes 636
638 free zone 650 controllers
Most advanced and sophisticated 730 insulating cases of 710 thermocouples
750 shell on the backs, 760 protection tubes
770 connectors, 810 tubular parts
812 first ends, 814 second ends
816 openings, 818 a pair of slits
820 elastomeric elements, 822 two ends 822 and 832
830 thermocouple contact surfaces, 832 two ends 822 and 832
910 leads, 920 cable segments
1010 substrate surfaces, 1110 lamps
1112 lamps, 1114 lamps
1116 lamps, 1120 lamps
The electric connector of 1122 lamps, 1123 lamps
1124 lamps, 1126 lamps
1127 quartz ampoules, 1128 filaments
1130 heaters, 1302 ring or annular lamps
1304 lamps, 1306 lamps
1308 lamps, 1310 lamps
1330 pipes, 1340 filaments
1400 heaters, 1410 lamps
1415 lamps, 1420 lamps
1425 lamps, 1430 lamps
1435 lamps, 1440 lamps
1445 lamps, 1450 lamps
1455 lamps, 1460 lamps
1465 lamps, 1,470 first district's filaments
1,475 second district's filaments 1480 the 3rd district's filament
1482 quartz ampoules, 1700 electron beam equipments
1710 base material lifter pins, 1715 bars
1717 end walls, 1719 upper surfaces
1720 reflecting plates
Embodiment
The embodiment of the invention provides the apparatus and method for that reduces base material charge damage, the pollution of reduction base material, reduces the base material contraction when electron beam treatment.By and large, apparatus and method for described in the literary composition can increase the nominal price ion concentration near base material, to allow secondary electron to leave base material and to allow substrate surface to reduce in electron beam treatment bigger temperature control is arranged when base material pollutes.Apparatus and method for described in the literary composition further provides improved temperature controlled apparatus and method for.
Can be according to siliceous or siliceous substrates, patterned substrate such as tool semiconductor subassembly base material and the non-patterning or the naked base material thereon of base material of embodiment of the invention processing.In one embodiment, base material comprises low dielectric constant films, and it is preferably and removes volatile species with electron beam and carry out reprocessing, therefore forms hole and reduces the thin-film dielectric constant.Can be by the mixture deposition low dielectric constant films that contains organo-silicon compound, hydrocarbon compound, selective oxidation agent and/or its composition.
Electron beam equipment:
The charge damage of base material when in one embodiment, when electron beam treatment, providing negative substrate bias with reduction or elimination electron beam treatment.Mat provides negative substrate bias can quicken the nominal price ion towards base material.In the nominal price ion and negative electrical charge can accumulate when electron beam treatment and cause undesired current path when manufacturing base material assembly.This back bias voltage also prevents that the secondary electron that produces from base material from returning from base material.
Fig. 1 is electron beam equipment 100 representative graphs that are used to implement the embodiment of the invention.Electron beam equipment 100 comprises tool negative electrode 104 and anode 106 and is disposed at wherein chamber 102.Anode 106 can be through perforation, as the grid anode.Negative electrode 104 is electrically insulated with the in-between insulator (not shown) of anode 106 mats.Negative electrode 104 is linked to the variable high voltage source supply 110 that is positioned at 102 outsides, chamber.Anode 106 is linked to the variable low-tension supply supply 108 that is positioned at 102 outsides, chamber.Chamber 102 also comprises variable stiffness steam leak-off valve 112 in order to control room 102 internal pressures.The lamp (as Halogen lamp LED) of heated substrate when this chamber can further comprise heater 113 and is used for electron beam treatment as one or more.Arrange heater 113 to be heater 113 one-sided heating to place base material 117 belows.In one embodiment, heater 113 places base material 117 tops.In one embodiment, heater 113 mats, one processing procedure window (not shown) and base material 117 are separated.This window can be by the quartz manufacturing.In one embodiment, heater 113 places vacuum chamber 102 outsides does not influence vacuum integrity so that heater 113 removes easily with replacing.Heater 113 will be in hereinafter further describing.Indoor substrate support 114 is linked to substrate bias source 116, and it provides substrate bias to base material 117 (Sheng is held in the palm on substrate support 114).Substrate bias source 116 can be variable dc bias source or variable radio frequency bias generator.Equipment 100 also can contain galvanometer 118 as ampere meter, contains the base material charging stream that holds in the palm on substrate support 114 to measure.Galvanometer 118 can place chamber 102 outsides of Jie 114 of substrate bias source 116 and substrate supports.Substrate support 114 can contain at least one hole (via vacuum chamber 102), is to be used to embed temperature survey assembly such as thermocouple assembly 160.Thermocouple assembly 160 contact substrates 117.Thermocouple assembly 160 is linked to controller 150.In one embodiment, vacuum chamber 102 comprises and surpasses a thermocouple.Among another embodiment, thermocouple assembly 160 effects are as substrate support.
In operation,, in vacuum chamber 102, put base material on substrate support 114 according to the embodiment of the invention.Substrate support 114 with arround be electrically insulated.Then bled in the chamber, make it to reduce to pressure between about 1mTorr and about 100Torr from atmospheric pressure.Variable stiffness steam leak-off valve 112 is in order to controlled pressure.
Electron beam produces down in high negative voltage substantially, and its mat high voltage source supply 110 is supplied to negative electrode 104.High pressure can be between pact-500V to making an appointment with-30,000V, or higher negative pressure value.Variable low-tension supply supply 108 can provide voltage to anode 106, and this voltage is positive with respect to the voltage that is supplied to negative electrode 104.
Be the electronic emission in the initial equipment, need the gas of ionization in the ionisation region 120 of 114 of anode 106 and substrate supports.This gas can contain one or more argon, helium, nitrogen, hydrogen, oxygen, ammonia, neon, krypton, xenon.In one embodiment, gas contains argon.But the natural high tension spark that has in gamma rays or the mat chamber 102 of ionization mat is initial.After the ionization, with small negative voltage apply be biased in anode 106 (as between about 0V with approximately-250V) attracting nominal price ion 122, as: to the argon ion of anode 106.Nominal price ion 122 enters the acceleration place 124 of configuration between 106 on negative electrode 104 and anode, and high pressure (as: pact-500V is to approximately-30, and 000V provides negative electrode) causes it to quicken towards negative electrode 104.The nominal price ion produces the electronics 126 that quickens back anode 106 because of bump negative electrode 104 tops.When some electronic impact anodes, many electronics continue by anode 106 with the base material on the contact substrate strutting piece 114 117.
Excessive negative electrical charge (from the electronics of the contact substrate) mat that is accumulated in when electron beam treatment on the base material 117 provides back bias voltage to base material 117 preventions.The bias generator 116 that mat is linked to substrate support 114 provides back bias voltage to base material 117.Provide to the bias voltage of base material and can be Dc bias.Or bias generator can be rf bias, as covering the relevant application of electron beam treatment of silicon (silicon on insulator) with the base material insulating barrier.Back bias voltage on the base material 117 can attract nominal price ion 128 (as the nominal price argon ion) in the several chambers, and quickens nominal price ion 128 towards base material 117, causes the negative electrical charge on the base material 117 partly or all to neutralize.Back bias voltage on the base material 117 also prevents that the secondary electron 132 that produces from base material 117 primary electrons bombardments (primary electron bombardment) from returning base material 117.These secondary electrons 132 are to be expelled to earth terminal (ground) as earthing chamber (grounded chamber) wall.Catch nominal price ion 128 with eliminate secondary electron 132 both all can promote in and negative electrical charge on the base material 117.Residual charge can produce the charge current less than about 0.005mA on the base material on base material 117, as less than about 0.002mA, for example between about 0.001mA and about 0.002mA.In one embodiment, the residual charge electric current is 0mA or about 0mA on the base material.As do not have substrate bias, the base material charge current is about substantially to equate that with electron beam current it is usually between about 0.5mA and about 50mA.Back bias voltage on the base material 117 preferable between approximately-10 with pact-30V, as between approximately-20 and pact-23V.Yet it is 0mA that best substrate bias can make the base material charge current, and its change can be depending on the electron beam that is used to handle base material.
Demonstration electron beam condition can be in order to comprise room temperature between about 200 ℃ and about 600 ℃, 350 ℃ to about 400 ℃ according to appointment.Electron beam can be between about 0.5kev to about 30kev.Reconditioning can be between about 1 μ C/cm
2With about 400 μ C/cm
2Chamber pressure can be between about 1mTorr and about 100mTorr.Electron beam current can be between about 0.5mA and about 50mA.The electron beam condition that provides in the literary composition can together be used with equipment shown in Figure 1, Fig. 3,5,6,17,18, with 19 equipment also be like this.The electron beam condition also can be used in miscellaneous equipment.
Fig. 3 is can be in the representative graph of implementing another electron beam equipment 300 of the embodiment of the invention.With the identical parts of Fig. 1 electron beam equipment parts, then indicate with the same reference number.Different with Fig. 1 equipment is that the substrate support 114 of Fig. 3 is not linked to the substrate bias source.When as shown in Figure 1 ring-type of the substrate support 114 of Fig. 3, but the base material actual support in the equipment 300 of Fig. 3 is on three contact points.One of three contact points can be thermocouple assembly 160.Though that only shows 160, three contact points of one group of thermocouple assembly arbitraryly contains one group of thermocouple assembly.Thermocouple assembly 160 is to be linked to controller 150.In one embodiment, surpassing one group of thermocouple assembly is included in the vacuum chamber 102.Can help to provide good base material temperature control in 3 plane upper support base materials, as base material and its stayed surface tool even contact.Other embodiment can contain any number contact point (containing thermocouple and/or ground connection pin 334).
The equipment 300 of Fig. 3 also contains the grid 330 between 114 of anode 106 and substrate supports.Grid 330 is attached to chamber sidewall 332 and ground connection.Grid 330 can be had and anode 106 or negative electrode 104 same sizes, as circumference.With reference to Figure 15, grid 330 contains lead (as aluminium), and its tool opening can provide network structure (mesh structure) to grid 330.Opening can be square and tool is of a size of several millimeters and is multiplied by several millimeters, as 10mm*10mm.Grid 330 another embodiment are illustrated at Figure 16.Among Figure 16 one embodiment, the quite a lot of hole of grid 330 tools.Each bore hole size is about 0.125cm, is spaced apart 0.145cm.Grid 330 sizes are about 31.75cm and gate is about 0.229cm.Grid comprises the transparency as the material of aluminium and tool 66%.(not shown) in one embodiment, grid 330 is formed by the aluminum conductor of tool diameter 10mils and transparency 66%.Grid 330 is to be linked to the bias generator 336 that just is pressed on grid 330 is provided.Bias generator 336 can be rf bias source or dc bias source.
The emission of the electronics of equipment 300 is initial and keep as mode as described in above-mentioned Fig. 1 equipment 100.Briefly, nominal price ion 122 (as argon ion) clashes into negative electrode 104 and contact and the secondary electron of handling base material 117 is provided.Towards base material 117, it also makes excessive negative electrical charge accumulation on the base material from the negative field of anode 106 (negative field) accelerated electron in extension.Though the tool nominal price ion of excessive negative electrical charge that can neutralize in the chamber 102 extends from the negative field of anode 106 and also can make the nominal price ion towards anode 106 accumulations, but not towards base material 117, thus its grade can in base material 117 on electric charge.Mat provides positive bias to grid 330, and the negative field effect meeting of extending from anode 106 stops in grid 330.Therefore, negative of power (force) effect such as anode, promptly before avoided the nominal price ion arrive base material and in and the stress effect of negative electrical charge on the base material 117, can be minimized by grid 330.Same, positive gate bias makes the nominal price ion away from from grid 330 and towards base material 117 (nominal price ion can in and negative electrical charge on the base material 117).Grid 330 is also caught secondary electron 132.Catch nominal price ion 128 with eliminate secondary electron 132 both all can promote in and negative electrical charge on the base material 117.Residual charge can produce the charge current less than about 0.005mA on the base material 117 on base material 117, as less than about 0.002mA, for example between about 0.001mA and about 0.002mA.In one embodiment, the residual charge electric current is 0mA or about 0mA on the base material.
When the base material electron beam treatment, provide to the positive bias of grid 330, be in be enough to fully or partly in and supply under the condition of electron beam electric charge on the base material.In one embodiment, provide to the positive bias of grid 330 between about 3V and about 30V.It is 0mA that yet the best grid bias of having approved can cause base material electric current electric charge, and it depends on the electron beam condition that is used to handle base material.For example: when the energy of electron beam treatment increases, the higher grid bias of demand then.Best grid bias also can be depending on the Electric Field Characteristics of base material self, as base material tendency accumulation negative electrical charge.
Fig. 4 A be icon according to the embodiment of the invention, Figure 40 0 of base material electric current and grid bias when electron beam treatment substantially.The x axle is represented the grid bias from-30V to 30V.The y axle is represented the base material electric current on the base material.I
SExpression base material electric current.I
PEExpression primary electron stream.I
SEExpression secondary electron stream.I
ARExpression argon stream.With reference to Fig. 4 A, as increasing to the grid bias of 0V from-30V, the therefore I that increases
SEMake I
SReduce.Increase to 0V from-30V, not I
ARWhen grid bias increases to about 15V from 0V, the I of increase
ARWith I
SEAll make I
SReduce.When the base material electric current is 0 can reach best grid bias, to put 402 expressions.When the base material electric current in point 402 when being 0, I
PEEqual I
ARWith I
SESummation.When grid bias increases, I
AR＞＞(I
PE-I
SE), so the I that reduces
SMake its nominal price more.
Fig. 4 B is an icon during according to the electron beam treatment in the embodiment of the invention one special case, Figure 41 0 of base material electric current and grid bias.The x axle is represented the grid bias from 0V to 60V.The y axle is represented the base material electric current (I on the base material
S), from-300 μ A to 300 μ A.To line 412, the naked silicon substrate of electron beam treatment in following condition: electron beam energy is-4.25keV, anode voltage-125V, electron beam current 3.0mA, argon stream is 350 ℃ of 100sccm and base material temperatures.The charge current of measuring on the base material is with line 412 expressions in the different substrate materials Dc bias.To line 414, the naked silicon substrate of electron beam treatment in following condition: electron beam energy is-2.0keV, anode voltage-125V, electron beam current 3.0mA, argon stream is 350 ℃ of 100sccm and base material temperatures.The charge current of measuring on the base material is with line 412 expressions in the different substrate materials Dc bias.Both I
SE(-2.0keV) (4.25keV), therefore needs more I greater than ISE
ARMake I
SEqual 0 to-4.25keV but not-2.0keV.The result shows that the grid bias of the about 5V of needs makes I
SEqual 0, as put shown in 416 (right-2.0keV).This result also shows needs about 25V to make I
SEqual 0, as put shown in 418 (right-4.25keV).
When use is implemented electron beam treatment according to the chamber of Fig. 3 on base material, find grid bias between about 5V and about 25V, during it is enough to and base material (with energy between-2.0keV and-electron beam treatment of 4.25keV) on the electron beam electric charge.During the grid bias of about 5V is enough to and the electron beam electric charge on the base material (the tool electron beam current is between 1mA and 4mA, in-2.0keV and 400 ℃).Therefore the required grid bias of electron beam current that is found in the scope can be constant.Fig. 5 is for implementing another electron beam equipment 500 representative graphs of the embodiment of the invention.Equipment 500 is similar with equipment 100 shown in Figure 1, and except the substrate support 114 of equipment 500 is not linked to the substrate bias source, and equipment 500 more comprises plasma flood gun 540.Plasma flood gun 540 can be linked to chamber 102 to introduce low energy ion such as the prodigiosin ion less than about 5eV, similarly is the low-yield argon ion via the import 542 that is positioned at chamber 102 sidewalls.Plasma flood gun 540 and import 542 are configurable between 114 of anode 106 and substrate supports, the nominal price ion that makes mat plasma flood gun 540 be supplied to the chamber can be provided in to sentence the local nominal price ion concentration that increases near base material 117 (being positioned on the substrate support 114) near substrate support 114, thus in and the electron beam electric charge on the base material 117.Plasma flood gun 540 also provides electronics to the chamber 102, can prevent excessive positive valence charge to be accumulated on the base material 117.
Example
Following example is in order to illustrate the embodiment of the invention.Base material in the example is the 300mm base material, and it is by being positioned at the EBk that the santa clara Material Used is provided
TMElectron beam chamber is handled.
Example 1:
In following condition naked silicon substrate is made electron beam treatment with equipment shown in Figure 1: electron beam energy is that 2keV, anode voltage-125V, electron beam current 1.5mA, argon stream are 353 ℃ of 100sccm and base material temperatures.Charge current on different substrate materials Dc bias measurement base material.Fig. 2 A is illustrated under the different substrate materials Dc bias figure of the charge current on the base material.
Example 2:
In following condition naked silicon substrate is made electron beam treatment: to be 3keV, anode voltage-125V, electron beam current 1.5mA, argon stream be 353 ℃ of 100sccm and base material temperatures to electron beam energy.Charge current on different substrate materials Dc bias measurement base material.Fig. 2 B is illustrated under the different substrate materials Dc bias figure of the charge current on the base material.
Fig. 2 A provides when being illustrated at electron beam treatment (prodigiosin 2keV) to the substrate bias of base material during for pact-20V, can obtain the base material charge current of 0mA or about 0mA.Fig. 2 B provides when being illustrated at electron beam treatment (prodigiosin 3keV) to the substrate bias of base material during for pact-23V, can obtain the base material charge current of 0mA or about 0mA.Therefore Fig. 2 A illustrates the method (when electron beam treatment) that the embodiment of the invention provides the base material charge current that produces about 0mA with Fig. 2 B, and provides method can reduce because of excessive negative electrical charge on the base material to accumulate the charge damage that produces (when the electron beam treatment).The base material charge current of about 0mA represents that base material nominal price ion flow equates with the base material electron stream substantially.
Use naked silicon substrate can reach the above-mentioned result who produces about example 1 and example 2, similar results as: in substrate bias be-during 20V, the base material electric current is about 0mA, then to contain the patterned substrate acquisition of semiconductor subassembly.Not appreciable impact of the back bias voltage electron beam treatment energy that provides to base material also is provided.For example: use the substrate bias of 2keV electron beam treatment and-20V, observing last electron beam energy is 1.98keV, and the expression substrate bias can not reduce electron beam energy substantially.
Generally believe when applying substrate bias as described here, because of base material being provided very low-energy ion bombardment, so can strengthen near the sealing of the hole (during the electron beam treatment base material, on low dielectric constant films, forming) of substrate surface.
Example 3:
The silicon substrate of tool Black Diamond Ilx (its process conditions is provided by santa clara Applied Materials) thin film deposition on it is to carry out electron beam treatment with following condition in equipment shown in Figure 3: electron beam energy is that 3.3keV, anode voltage-125V, electron beam current 1.5mA, argon stream are 400 ℃ of 100sccm and base material temperatures.Ground connection aluminum conductor grid tool 66% transparency of equipment, diameter of wire 10mils, with 0.011 inch diameter opening.Charge current on different grid biases measurement base materials.Charge current on the base material increases and increases along with grid bias, and can reach 0 in grid bias during for 25V.The property of thin film of Black Diamond Ilx after electron beam treatment, comprise thickness, refractive index, contraction, thickness evenness, dielectric constant and stress, all be equivalent under the conditions of similarity property of thin film that in the chamber of the grid of positive bias, carries out the Black Diamond Ilx of electron beam treatment in not comprising as shown in Figure 3.
Thermocouple
The embodiment of the invention also provides the thermocouple that comprises ceramic tip.Though main the discussion is treatment chamber 600, thermocouple assembly 160 also can together use with the aftermentioned chamber, needs the processing of monitoring temperature or makes chamber including but not limited to chemical vapour deposition (CVD), physical vapour deposition (PVD), plasma-assisted chemical vapour deposition or any other as other treatment chamber.
Fig. 6 is the exemplary treatments chamber 600 according to the embodiment of the invention, the representative graph of electron beam chamber.Electron beam chamber 600 comprise vacuum chamber 620, large area cathode 622, target surface or be positioned at the substrate support 630 of a free zone 638, and the position at grid anode 626 between 622 of target surface 630 and large area cathodes.Target surface 630 contains at least one hole 634 its extensions via vacuum chamber 620, is used to embed temperature survey assembly such as thermocouple assembly 160.Thermocouple assembly 160 is to be linked to controller 650.Electron beam chamber 600 more comprises high voltage insulator 624 and the variable steam leak-off valve 632 that quickens place 636 (from large tracts of land negative electrode 622 insulated gate electrode anodes 626), control vacuum chamber 620 internal pressures, is linked to the variable high voltage source supply 629 of large area cathode 622, with the variable low-tension supply supply 631 that is linked to grid anode 626.
Fig. 7 is the perspective view of thermocouple assembly 160 embodiment.The thermocouple assembly 160 of this embodiment comprises the thermocouple tip 710 that is bonded to insulating case 730.The insulating case 730 of thermocouple most advanced and sophisticated 710 and convergent through a segment length cable or cable segments 920 (with reference to Fig. 9) be attached to shell on the back 750, through protection tube 760 around cable segments 920.Shell on the back 750 is furnished with a plurality of crooked contact (not shown)s, and each is linked to the corresponding pin (not shown) of lead 910 (as the mat welding) with the connector 770 of thermocouple assembly 160.
Fig. 8 is the perspective view that is shown in most advanced and sophisticated 710 embodiment of thermocouple of Fig. 7.Thermocouple tip 710 comprises the tubular part 810 of tool first end 812 and second end 814.Tubular part 810 tool openings 816 be formed at tubular part 810 lip-deep a pair of slits 818, be via pass each of elastomeric element 820 with two ends 822 and 823.The end 822 of elastomeric element 820 and the welding of 823 mats or other known attachment techniques are attached to tubular part 810 outsides with second end 814.The welding of contact surface 830 mats or other known attachment techniques are attached to elastomeric element 820.Apply and be biased in elastomeric element 820 so that contact surface 830 stretches out the opening 816 of first end 812 of tubular part 810.The welding of lead 910 mats or other common known attachment techniques of comprising two metal wires (as shown in Figure 9) are attached to contact surface 830 inboards, connect face or temperature sensor thereby form thermocouple.
Fig. 9 is shown in the representative graph of the line 9-9 of Fig. 7 for demonstration thermocouple assembly 160 acquisitions of Fig. 7.Fig. 9 shows that cable segments 920 is closed in the protection tube 760.Cable segments 920 comprises the insulated cable that the enough elasticity of tool can resist damage, when thermocouple assembly 160 is fixed in arbitrary end but hard foot inserts in the protection tubes 760 cable segments 920.Cable segments 920 comprises at least one lead 910, its be with the continuous protection tube 760 that is closed in liquid seal and air seal in the fire-resistant inorganic insulation body phase insulation of high pressure.Protection tube 760 comprise any suitable material such as aluminium, stainless steel (as:
) with other not with high ductibility, the noncorroding metal alloy of process chemistry thing reaction.
The welding of lead 910 mats or other common known attachment techniques are attached to 830 pairs of side surfaces of contact surface, and the thermocouple that is attached to elastomeric element 820 with formation connects face.If lead 910 is welded on the contact surface 830, the essential careful minimum scolder that uses is because of a large amount of scolders will be because of passing the normal bending that becomes popular and reduce reaction rate and will disturb elastomeric element 820 from connecing face.
In the hole 634 of the electron beam chamber 600 of Fig. 6 is to insert thermocouple, so that the convergent insulating case 730 of thermocouple assembly 160 is consistent and abuts against with taper shelves body (tapered stop) (not shown) in the hole 634 that is formed at electron beam chamber 600, and contact surface 830 extends beyond hole 634 and is disposed in the vacuum chamber.When convergent insulating case 730 fits each other with a shelves body, can form the mechanism (stop mechanism) that stops that thermocouple assembly 160 is fixed to electron beam chamber 600 and seal with resistance file thermocouple assembly 160 and formation when the substrate surface (not shown) reaches correct the contact with thermocouple contact surface 830.Stop that mechanism also makes thermocouple assembly 160 be easy to remove.Being used in the tapered surface that stops mechanism makes thermocouple assembly 160 be easy to break away from.Known techniques personage should understand convergent insulating case 730 with the non-inevitable convergent of shelves body and can be any shape and size that is applicable to each other.
In operation, be exposed to that tool low dielectric constant films base material thereon is to be placed on the target surface 630 in the electron beam.Figure 10 A is the contact surface 830 and elastomeric element 820 at thermocouple tip 710, in the synoptic diagram of 1010 tops, contact substrate surface at the beginning.Elastomeric element 820 is positioned at the no-bias position.Shown in Figure 10 B, when substrate surface 1010 contacted with the contact surface 830 at thermocouple tip 710, the downward strength that mat substrate surface 1010 weight provide applied bias voltage to elastomeric element 820.The bias voltage permission contact surface 830 of elastomeric element 820 is kept with substrate surface 1010 and is contacted, when it also allows base material contact target surface 630.
During processing procedure, voltage is formed on the attachment thermocouple gradually and connects between two metal wires of lead 910 at face place, and metal wire is not attached end or is then maintained known temperature with reference to connecing face.Thermocouple connects face and produces and the proportional electromotive force of temperature difference with reference to the temperature contrast that connects between face.Measured voltage transfers to controller 150 and can be used for determining base material temperature via lead 910.
Mat control is the embodiment of system operational processes chamber 600.Control is that system can comprise any number controller such as controller 150, processor and input/output device.In one embodiment, control is that system is parts of system for closed loop feedback, and the various parameter when handling base material in the monitoring treatment chamber 600 is also then issued one or more controlling signal makes it carry out necessary adjustment according to various set points.By and large, monitoring parameter comprises temperature, pressure and specific gas flow rate.
X lamp heater
The embodiment of the invention also provides heater or heater 113, and heater 113 is preferably cross light heating component (cross lamp heating assembly).Though above-mentioned discussion about electron beam chamber, heater 113 also can be used on other treatment chamber including but not limited to chemical vapour deposition (CVD), physical vapour deposition (PVD), plasma-assisted chemical vapour deposition chamber.
Figure 11 is the perspective view of heater 113 embodiment.Heater 113 is preferably the cross light heater.In an illustrated embodiment, heater 113 can contain one or more lamp, including but not limited to argon lamp, Halogen lamp LED, tungsten halogen lamp, high power arc lamp, capacitive coupling lamp, microwave source or ultraviolet source.Can install heater 113 produces between one and three temperature-controlled area territory.In one embodiment, heater 113 tool two temperatures control areas.In one embodiment, heater 113 tools one perimeter its comprise four lamps 1110,1112,1114, with 1116 dispose with cross (crossed).Heater 113 also tool one interior zone its comprise four lamps 1120,1122,1124, with 1126 with configured in parallel.Can arrange lamp in any required geometric format, intersect at least one temperature province, make the fluorescent tube configuration that two temperatures zone at least is provided but be preferably at least two lamps.In one embodiment, each zone can be between 1 to 100 kilowatt, and each zone is preferably between about 3 kilowatts, and integral body is 6 kilowatts.In one embodiment, the filament 1128 tool equal length of each area lights.Among another embodiment, the different filament length of filament 1128 tools of each area lights are with preferable definition temperature curve and uniformity.These filament length of diagram and other filament length can be in order to produce temperature required curve.Two zones that the refractor (not shown) is separated are the part of main body, and using increases hardness and cooling reflecting plate 1720 (being shown among Figure 18).In one embodiment, the electric connector 1123 of lamp is with spring loaded.Linear lamp can be meet user's power supply, voltage, with the specification lamp of filament specification.Connector and lamp all are positioned on the side of quartz ampoule 1127, and it is exposed to atmosphere to eliminate any electric arc (arcing), and allowing the free convection cooling is pollutant sources with getting rid of lamp.
For confirming the lamp module design, implement the lamp light emitting artificial.Model has been showed inner and perimeter luminous pattern simultaneously, and also susceptible of proof pattern controllability.Change inner and perimeter power settings, showed the ability that when the smooth-going conversion in interval, produces the luminous pattern of smooth, concave surface or convex surface.
The contraction uniformity of the 300mm base material of old-fashioned heater design is used in Figure 12 A explanation.Original EBk
TMLamp in the time of 400 ℃, set point only can between with 20 ℃ of the same scopes (crossing the 300mm base material).This causes the contraction uniformity value (3 σ) of the low dielectric constant films 26% of 1500 dusts shown in Figure 12 A.
Figure 12 B icon uses the contraction uniformity of the 300mm base material of heater of the present invention.Use heater of the present invention, the temperature range of crossing the 300mm base material is reduced to 7 ℃ (in 400 ℃ of set points).This causes the contraction uniformity value (3 σ) of the low dielectric constant films 8% of 1500 dusts shown in Figure 12 B.
Figure 13 is the perspective view that can be used for heater 1300 another embodiment of the present invention.Heater 1300 can with other treatment chamber (including but not limited to chemical vapour deposition (CVD), physical vapour deposition (PVD), with the plasma-assisted chemical vapour deposition chamber) use.It comprises ring or annular lamp 1302 heater 1300 tools one perimeter.Heater 1300 also tool one interior zone its comprise four lamps 1304,1306,1308, with 1310 with configured in parallel.In one embodiment, the filament 1340 tool equal length of each area lights.Among another embodiment, the different filament length of the filament tool of each area lights are with preferable definition temperature curve and uniformity.These filament length of diagram and other filament length can be in order to produce temperature required curve.Filament 1340 is included in the pipe 1330, is preferably quartzy made.Have the knack of this technology personage can understand other the configuration with geometry be possible.
Figure 14 is the perspective view that can be used for heater 1400 another embodiment of the present invention.Three temperature-controlled area territories of heater 1400 tools.In one embodiment, heater 113 tool two temperatures control areas.The first area comprises lamp 1410,1435,1440, with 1465.Second area comprises lamp 1415,1430,1445, with 1460.The 3rd zone comprises lamp 1420,1425,1450, with 1455.For the base material of 300mm, the about 152mm of first area filament 1470 tool filament length.For the base material of 300mm, the about 279mm of second area filament 1475 tool filament length.For the base material of 300mm, the about 152mm of the 3rd regional filament 1480 tool filament length.These filament length of diagram and other filament length can be in order to produce temperature required curve.Connector and lamp all are positioned on the side of quartz ampoule 1482, and it is exposed to atmosphere to eliminate any electric arc (arcing), and allowing the free convection cooling is pollutant sources with getting rid of lamp.Lamp can remove from quartz ampoule 1482 under the vacuum state that does not influence the chamber.
Figure 17 is the representative graph that can be used for implementing another electron beam equipment 1700 of the embodiment of the invention.The parts that are equal to same reference number sign picture 1 and Fig. 3 electron beam equipment parts.Be not linked to the substrate bias source as the equipment 300 of Fig. 3, the substrate support 114 of Figure 17.When the substrate support 114 of Figure 17 is shown as ring, but base material reality mat thermocouple in Figure 17 equipment 1700 and pin (not shown) combined support.Discuss as mentioned, thermocouple is in order to measure temperature.Can put first thermocouple 160 in the position that can measure base material 117 inner region temperature.Second thermocouple 170 can place towards base material 117 outer radius, makes it can measure the position of radius temperature outward.Among another embodiment, second thermocouple 170 is in order to measure the temperature on the substrate support 114. Thermocouple assembly 160 and 170 all is linked to controller 150.In other embodiments, any compound thermocouple assembly can comprise vacuum chamber 102.But also mat plan of the present invention of other thermocouple arrangement.
Figure 17 also comprises base material lifter pin 1710 and reflecting plate 1720.Device base material lifter pin 1710 is to rise base material 117 to substrate support 114 or leave.In one embodiment, base material lifter pin 1710 comprises quartzy material.Base material lifter pin 1710 is linked to bar 1715.Bar 1715 is configured in electron beam equipment 1700 bottoms formation opening, and links base material lifter pin 1710 to rising machine-processed (not shown).Bar 1715 is generally hollow and/or is equipped with several channels that guiding power supply lotus root is closed to strengthen, transducer, control line, fluid line and other from base material lifter pin 1710 device to electron beam equipment 1700 outsides.In one embodiment, bar comprises quartzy material.
Be positioned at the reflecting plate 1720 of base material 117 belows, the radiation speciality of permission base material 117 is independent of the emissivity of base material 117 substantially.Reflecting plate 1720 can be any other shape smooth, crooked or that allow required base material speciality to finely tune.(not shown) in one embodiment, reflecting plate 1720 can place base material 117 tops.Set down in high temperature, reflecting plate 1720 places base material 117 tops substantially.(not shown) among another embodiment, end wall 1717 effects of chamber 1700 are as reflecting plate.In this embodiment, the end wall 1717 contained upper surfaces 1719 (with reference to Figure 19) of chamber 1700 are to be used for reflected energy in base material 117 dorsal parts.Reflection between base material 117 dorsal parts and reflecting surface can produce blackbody chamber (blackbody cavity), makes the temperature survey (not shown) of thermocouple not influenced by the substrate back side emissivity, thereby correct temperature measurement capabilities can be provided.In one embodiment, with its reflection wavelength of reflecting surface of absorbing the reflecting plate form between 300-2000nm, and the mat width of cloth penetrate can assembly with other wavelength reflection.Reflecting plate 1720 be positioned at base material 117 belows and be adjacent to base material 117 between about 5cm to about 25cm, be preferably less than about 15cm.Reflecting plate 1720 allows to improve the temperature control of base material to base material, thereby improves the uniformity between base material.
Fig. 1,4,5, with Figure 17 icon and describe as be provided in and the separation solution of the electron beam electric charge on the base material, with any combination of apparatus and method for described in Fig. 1,4,5, the literary composition relevant with Figure 17 can be in order to reduction to the charge damage of base material (when the electron beam treatment).For example: can be with the electron beam treatment base material in chamber (grid of tool positive bias between between anode and substrate support), and the plasma flood gun of low-yield nominal price ion to the chamber is provided when electron beam treatment.Be preferably with plasma flood gun and introduce low-yield nominal price ion to the chamber between between anode and substrate support.Simultaneously also can be with the electron beam treatment base material in chamber (grid of tool positive bias between between anode and substrate support), and the substrate bias source provides back bias voltage to base material when electron beam treatment.
Figure 18 is the low parts representative graph according to the electron beam equipment of the embodiment of the invention.Figure 18 show be linked to bar 1715, substrate support ring 114, base material 117, with the base material lifter pin 1710 of heater 113.End wall 1717 comprises upper surface 1719 also icon.As discussed above, heater 113 comprises the lamp that places in the pipe 1127.Pipe 1127 can contain any known material but be preferable with quartz.Lamp 1127 can remove under the vacuum state that does not influence the chamber and replace.
Figure 19 is the low parts bottom view according to the electron beam equipment of the embodiment of the invention.The position that Figure 19 illustrates base material lifter pin 1710, substrate support ring 114, first thermocouple 160 with respect to second thermocouple 170 of substrate support ring, with heater 113.First thermocouple 160 is set to measure the temperature on the base material.Second thermocouple 170 is set to measure the temperature on the substrate support ring 114.Among another embodiment, second thermocouple 170 is set to measure the temperature on the base material perimeter.Among the embodiment, second thermocouple 170 is set again to measure the temperature of nearly base material.Other embodiment consider use greater than two thermoelectricity occasionally less than two thermocouples.For configuration is used for the electron beam equipment of 200mm or 300mm base material, removable base material lifter pin 1710 and substrate support ring 114.When the 300mm base material is converted to the 200mm base material, only need use the graphite preheating ring of base material specific dimensions carborundum coating, to get rid of the loss at base material edge under the high temperature.
Aforementioned is to be applied to the embodiment of the invention, can revise other with the further embodiment of the invention but not departing from its base region, and its scope is to define by claim.
Claims (20)
1. electron beam equipment that is used to handle base material comprises:
Vacuum chamber comprises:
Electron source comprises:
Anode; And
Negative electrode;
Substrate support;
Grid is configured to during electron beam treatment to reduce the infringement of electric charge to this base material, and wherein this grid is between this anode and this substrate support, and this anode is between this negative electrode and this grid; And
Low pressure source is linked to this anode, and this low pressure source is suitable for providing 0V voltage to the scope the between-250V;
High-voltage power supply is linked to this negative electrode, and this high-voltage power supply is suitable for providing-voltage of 500V to the scope the between-30000V;
Bias generator is linked to this grid; And
Vacuum source is used to keep this base material vacuum.
2. electron beam equipment as claimed in claim 1, wherein this vacuum chamber more comprises a cross light (cross lamp) heater with this vacuum chamber.
3. electron beam equipment as claimed in claim 1, wherein this vacuum chamber more comprises at least one and thermocouple assembly this vacuum chamber.
4. electron beam equipment as claimed in claim 1, wherein this substrate support comprises at least one and thermocouple assembly this vacuum chamber.
5. electron beam equipment as claimed in claim 4, wherein this thermocouple assembly comprises by the made contact surface of a ceramic material.
6. electron beam equipment as claimed in claim 5, wherein this ceramic material is to be selected from the group that is made up of carborundum, silicon nitride, aluminium nitride, rhinestone and its composition.
7. electron beam equipment as claimed in claim 1, wherein this vacuum chamber more comprises a substrate bias source that is linked to this substrate support.
8. electron beam equipment as claimed in claim 2, wherein this cross light heater is to be disposed at this substrate support below.
9. electron beam equipment as claimed in claim 2, wherein this cross light heater comprises second array of the lamp of first array of the lamp of parallel alignment at least and parallel alignment, and first array intersects with second array.
10. method that reduces the charge damage of base material during electron beam treatment comprises:
One Room is provided, and this chamber comprises negative electrode, substrate support, the anode between this negative electrode and this substrate support, and the grid between this anode and this substrate support; And
Provide one to be biased into this grid, wherein this bias voltage be enough to fully or this base material that partly neutralizes on the condition of electron beam electric charge under provide.
11. method as claimed in claim 10, wherein this condition is to be enough to this base material charge current is reduced to less than 0.005mA.
12. method as claimed in claim 10, wherein this bias voltage is a Dc bias.
13. method as claimed in claim 10, wherein this bias voltage is a rf bias.
14. method as claimed in claim 10, wherein this base material comprises a low dielectric constant films, and the electron beam treatment of this low dielectric constant films is included in this low dielectric constant films and forms hole.
15. method as claimed in claim 10, wherein this bias voltage is between 3V and 40V.
16. method as claimed in claim 10, wherein this bias voltage is between-3V and-30V.
17. an electron beam equipment that is used to handle base material comprises:
Vacuum chamber comprises:
Electron source comprises:
Anode; And
Negative electrode;
Substrate support;
Grid, between this anode and this substrate support, wherein this grid is to be linked to a bias generator, and this anode is between this negative electrode and this grid; And
The cross light heater is positioned under this substrate support;
Low pressure source is linked to this anode, and this low pressure source is suitable for providing 0V voltage to the scope the between-250V;
High-voltage power supply is linked to this negative electrode, and this high-voltage power supply is suitable for providing-voltage of 500V to the scope the between-30000V; And
Vacuum source is used to keep this base material vacuum.
18. electron beam equipment as claimed in claim 17, wherein this vacuum chamber more comprises at least one thermocouple assembly, and wherein this at least one thermocouple assembly comprises a contact surface, is configured to contact this substrate surface, and wherein this contact surface comprises a ceramic material.
19. electron beam equipment as claimed in claim 17, wherein this vacuum chamber more comprises a plasma flood gun that is linked to this vacuum chamber, and wherein this plasma flood gun nominal price ion of being suitable for having the energy that is lower than 5eV causes in this vacuum chamber.
20. electron beam equipment as claimed in claim 18, wherein this at least one thermocouple assembly and this cross light heater are and a controller electrical communication, and this controller is configured to control the heat that this cross light heater is dispersed.
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71738605P | 2005-09-15 | 2005-09-15 | |
| US60/717,386 | 2005-09-15 | ||
| US78190806P | 2006-03-13 | 2006-03-13 | |
| US60/781,908 | 2006-03-13 | ||
| US11/383,383 US20060289795A1 (en) | 2005-06-02 | 2006-05-15 | Vacuum reaction chamber with x-lamp heater |
| US11/383,383 | 2006-05-15 | ||
| US11/425,974 US7777197B2 (en) | 2005-06-02 | 2006-06-22 | Vacuum reaction chamber with x-lamp heater |
| US11/425,974 | 2006-06-22 | ||
| PCT/US2006/035753 WO2007035389A2 (en) | 2005-09-15 | 2006-09-13 | Vacuum reaction chamber with x-lamp heater |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101390185A CN101390185A (en) | 2009-03-18 |
| CN101390185B true CN101390185B (en) | 2010-12-15 |
Family
ID=39806223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006800340350A Expired - Fee Related CN101390185B (en) | 2005-09-15 | 2006-09-13 | Vacuum reaction chamber with x-lamp heater |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5412110B2 (en) |
| KR (1) | KR20080051174A (en) |
| CN (1) | CN101390185B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103515177A (en) * | 2012-06-20 | 2014-01-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber, substrate processing equipment and its temperature control method |
| KR102478138B1 (en) * | 2021-04-15 | 2022-12-14 | 박흥균 | Polymer hardening process apparatus for semiconductor package |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4297189A (en) * | 1980-06-27 | 1981-10-27 | Rockwell International Corporation | Deposition of ordered crystalline films |
| US5757018A (en) * | 1995-12-11 | 1998-05-26 | Varian Associates, Inc. | Zero deflection magnetically-suppressed Faraday for ion implanters |
| US6258287B1 (en) * | 1996-08-28 | 2001-07-10 | Georgia Tech Research Corporation | Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment |
| US6310323B1 (en) * | 2000-03-24 | 2001-10-30 | Micro C Technologies, Inc. | Water cooled support for lamps and rapid thermal processing chamber |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5248371A (en) * | 1992-08-13 | 1993-09-28 | General Signal Corporation | Hollow-anode glow discharge apparatus |
| JP2000265277A (en) * | 1999-03-12 | 2000-09-26 | Nichimen Denshi Koken Kk | Formation of film using electron beam plasma |
| JP3813877B2 (en) * | 2001-01-19 | 2006-08-23 | 東京エレクトロン株式会社 | Substrate processing method |
| US7026634B2 (en) * | 2001-06-28 | 2006-04-11 | E-Beam & Light, Inc. | Method and apparatus for forming optical materials and devices |
| JP4071002B2 (en) * | 2002-01-25 | 2008-04-02 | 東京エレクトロン株式会社 | Vacuum processing equipment |
-
2006
- 2006-09-13 CN CN2006800340350A patent/CN101390185B/en not_active Expired - Fee Related
- 2006-09-13 KR KR1020087008856A patent/KR20080051174A/en not_active Application Discontinuation
- 2006-09-13 JP JP2008531306A patent/JP5412110B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4297189A (en) * | 1980-06-27 | 1981-10-27 | Rockwell International Corporation | Deposition of ordered crystalline films |
| US5757018A (en) * | 1995-12-11 | 1998-05-26 | Varian Associates, Inc. | Zero deflection magnetically-suppressed Faraday for ion implanters |
| US6258287B1 (en) * | 1996-08-28 | 2001-07-10 | Georgia Tech Research Corporation | Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment |
| US6310323B1 (en) * | 2000-03-24 | 2001-10-30 | Micro C Technologies, Inc. | Water cooled support for lamps and rapid thermal processing chamber |
Non-Patent Citations (1)
| Title |
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| 同上. |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5412110B2 (en) | 2014-02-12 |
| JP2009509340A (en) | 2009-03-05 |
| KR20080051174A (en) | 2008-06-10 |
| CN101390185A (en) | 2009-03-18 |
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