JPS63266825A - Removing method for organic material - Google Patents
Removing method for organic materialInfo
- Publication number
- JPS63266825A JPS63266825A JP9975887A JP9975887A JPS63266825A JP S63266825 A JPS63266825 A JP S63266825A JP 9975887 A JP9975887 A JP 9975887A JP 9975887 A JP9975887 A JP 9975887A JP S63266825 A JPS63266825 A JP S63266825A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- lamp
- ozone
- ultraviolet
- ultraviolet ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 7
- 239000011368 organic material Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 28
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000001301 oxygen Substances 0.000 claims abstract 2
- 229910052760 oxygen Inorganic materials 0.000 claims abstract 2
- 239000000126 substance Substances 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 abstract description 6
- 229910052708 sodium Inorganic materials 0.000 abstract description 6
- 239000011734 sodium Substances 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 4
- 239000005416 organic matter Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
不発明は有機物除去方法に係り、特に基体に損傷がなく
、Ｍ機物除去レートの大きい有機物除去方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for removing organic matter, and particularly to a method for removing organic matter that does not damage a substrate and has a high M organic matter removal rate.
従来の方法は、特公昭５８−１５９３９号に記載のよう
に、紫外線ランプの放射エネルギーを利用して基体全加
熱し、有機ホトレジストのような有機物を除去していた
。又、温度は２５０Ｃ付近を使用していた。In the conventional method, as described in Japanese Patent Publication No. 58-15939, the entire substrate was heated using the radiant energy of an ultraviolet lamp to remove organic substances such as organic photoresists. Also, the temperature used was around 250C.
上記従来の技術は紫外扉ランプによって加熱しているた
め、９００ワツトのような人形のランプを使用し、太′
亀力消費となっていた。又、基体温度’１２５０ｃ付近
まで上昇させていたことから、例えば有機ホトレジスト
全除去する場合などは、該レジスト中のナトリウムが基
体に拡散し、悪影響を与えることかめる。The conventional technology described above uses an ultraviolet door lamp for heating, so a doll lamp of 900 watts is used, and a large
It was consuming a lot of energy. Furthermore, since the substrate temperature was raised to around 1250° C., for example, when the organic photoresist is completely removed, the sodium in the resist may diffuse into the substrate and have an adverse effect.
このように従来技術では、上述の点に配慮されておらず
、したがって本発明は、こｎらの点を解決した有機物除
去方法を従供することを目的としている。As described above, the above-mentioned points have not been taken into consideration in the prior art, and therefore, the present invention aims to provide an organic matter removal method that solves these points.
ランプは、１８０〜３００ｎｍの紫外線を有効に照射す
るために低圧水銀蒸気放電灯を使用し。The lamp uses a low-pressure mercury vapor discharge lamp to effectively irradiate ultraviolet light of 180 to 300 nm.
基体の加熱には、基体ホルダーに設置したヒータにより
加熱することとする。この場合、紫外線照度は基体表面
で５０ｍｗ／ｃｍ２以上とする。又。The substrate is heated by a heater installed in the substrate holder. In this case, the ultraviolet irradiance is set to 50 mw/cm 2 or more on the substrate surface. or.
基体温度は１００〜２００１：’の範囲とする。これに
より前述の目的が達せられる。The substrate temperature is in the range of 100 to 2001:'. This achieves the aforementioned objectives.
ランプは基体表面に１８５ｎｍ、１９４ｎｍ。 The lamps are 185 nm and 194 nm on the substrate surface.
２５４ｎｍの波長を含んだ紫外線全照射し、ヒータは基
体を１００〜２００Ｃに加熱するように動作する。The entire substrate is irradiated with ultraviolet light including a wavelength of 254 nm, and the heater is operated to heat the substrate to 100 to 200C.
即ち、加熱は、それに適した方法（本発明ではホルダー
に設けられたヒータによる加熱）により行ない、紫外線
ランプによる非合理的な加熱をさける作用をしている。That is, heating is performed by an appropriate method (in the present invention, heating by a heater provided in the holder), and serves to avoid irrational heating by an ultraviolet lamp.
ランプとしては１４０ワツトの低圧水銀ランプとし、ラ
ンプ電流：ＩＡ、封入ガス： Ｎ ｅ −Ａ ｒ混合ガ
スとした。The lamp was a 140 watt low pressure mercury lamp, lamp current: IA, and filled gas: Ne-Ar mixed gas.
ヒータはホルダー内に埋め込み、３００ワツトとした。The heater was embedded in the holder and had a power of 300 watts.
オゾン濃度は５体積チとした。The ozone concentration was set to 5 volumes.
ランプと基体との距離を１關とし、基体表面の紫外線照
度を６０ｍＷ／ｃｍ２とした。又、基体温度は２００Ｃ
とした。The distance between the lamp and the substrate was set to 1, and the ultraviolet irradiance on the surface of the substrate was 60 mW/cm 2 . Also, the substrate temperature is 200C
And so.
基体としては、シリコンウェーハの上に有機ホトレジス
トを１００００人の厚さで塗布したものを用いた。The substrate used was a silicon wafer coated with an organic photoresist to a thickness of 10,000 yen.
この結果、消費電力としては５００ワツト弱となシ、又
、該レジストを１．３分で除去した。ナトリウムの基体
への拡散は軽微でるり、実用止金く問題がなかった。As a result, the power consumption was just under 500 watts, and the resist was removed in 1.3 minutes. Diffusion of sodium into the base was very slight and caused no problems in practical use.
オゾン濃度が低い場会、又紫外線照度が低い場会にはレ
ジスト除去時間が長くなり、実用に供せない。又、基体
温度が商いと該レジスト中のナトリウム等の拡散が大き
くなり性能歩留がおちる。When the ozone concentration is low or when the ultraviolet illumination is low, the resist removal time becomes long, making it impractical. Furthermore, when the substrate temperature decreases, the diffusion of sodium, etc. in the resist increases, resulting in a decrease in performance yield.
本発明によれば消費電力を小さくでき、かつ、ナトリウ
ム等の拡散という現象を防止できる。According to the present invention, power consumption can be reduced and the phenomenon of diffusion of sodium and the like can be prevented.
第１図は本発明の方法による一実施例を示す図である。
１・・・紫外線ランプ、２・・・ノズル、３・・・オゾ
ンヲ含む酸素ガス、４・・・基体、５・・・ホルダー兼
ヒータ。
第 １ 口
、９外−泉ランフ゛
２ ノスル
３ オン′シ襲奢と一如え電力゛、べ、４基体
５ よＪＬｙ兼ヒータFIG. 1 is a diagram showing an embodiment of the method of the present invention. 1... Ultraviolet lamp, 2... Nozzle, 3... Oxygen gas containing ozone, 4... Substrate, 5... Holder and heater. 1st mouth, 9 outside - Izumi lamp 2 nosle 3 on's luxury and just electric power, be, 4 base 5, JLy and heater
Claims (1)
内で、１８５ｎｍ、１９４ｎｍ、２５４ｎｍの波長を含
んだ紫外線を照射し、かつヒータにより基体温度を１０
０〜２００℃に上昇させ、上記紫外線の照度が基体表面
で少なくとも５０ｍＷ／ｃｍ＾２であることを特徴とす
る有機物除去方法。1. In an oxygen-containing atmosphere containing at least 3% ozone by volume, irradiate ultraviolet rays containing wavelengths of 185 nm, 194 nm, and 254 nm, and lower the substrate temperature to 10
A method for removing organic substances, characterized in that the temperature is raised to 0 to 200°C, and the illuminance of the ultraviolet rays is at least 50 mW/cm^2 on the surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9975887A JPS63266825A (en) | 1987-04-24 | 1987-04-24 | Removing method for organic material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9975887A JPS63266825A (en) | 1987-04-24 | 1987-04-24 | Removing method for organic material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63266825A true JPS63266825A (en) | 1988-11-02 |
Family
ID=14255881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9975887A Pending JPS63266825A (en) | 1987-04-24 | 1987-04-24 | Removing method for organic material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63266825A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001341196A (en) * | 2000-06-01 | 2001-12-11 | Toray Ind Inc | Method for removing adherend on surface of roll and method for manufacturing thermoplastic resin film |
| SG115381A1 (en) * | 2001-06-20 | 2005-10-28 | Univ Singapore | Removal of organic layers from organic electronic devices |
| US8679732B2 (en) | 2009-06-24 | 2014-03-25 | HGST Netherlands B.V. | Method for removing resist and for producing a magnetic recording medium, and systems thereof |
-
1987
- 1987-04-24 JP JP9975887A patent/JPS63266825A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001341196A (en) * | 2000-06-01 | 2001-12-11 | Toray Ind Inc | Method for removing adherend on surface of roll and method for manufacturing thermoplastic resin film |
| SG115381A1 (en) * | 2001-06-20 | 2005-10-28 | Univ Singapore | Removal of organic layers from organic electronic devices |
| US8679732B2 (en) | 2009-06-24 | 2014-03-25 | HGST Netherlands B.V. | Method for removing resist and for producing a magnetic recording medium, and systems thereof |
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