JPS62166529A - Formation of thin film - Google Patents
Formation of thin filmInfo
- Publication number
- JPS62166529A JPS62166529A JP1041086A JP1041086A JPS62166529A JP S62166529 A JPS62166529 A JP S62166529A JP 1041086 A JP1041086 A JP 1041086A JP 1041086 A JP1041086 A JP 1041086A JP S62166529 A JPS62166529 A JP S62166529A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- solution
- silicon oxide
- heat
- oxygen gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 7
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052753 mercury Inorganic materials 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 7
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 7
- 238000000576 coating method Methods 0.000 abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052796 boron Inorganic materials 0.000 abstract description 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 2
- 239000011574 phosphorus Substances 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置の製造に用いられる薄膜の形成方
法に関し、特に溶液塗布熱処理による薄膜の形成方法に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming a thin film used in the manufacture of semiconductor devices, and particularly to a method for forming a thin film by solution coating heat treatment.
〔従来の技術〕 ゛
半導体高集積回路装置に於いては、層間絶縁膜として平
坦化された酸化膜が用いられている。この平坦化酸化膜
の成膜方法の一つとして溶液塗布を用いる方法がある。[Prior Art] ``In semiconductor highly integrated circuit devices, a planarized oxide film is used as an interlayer insulating film. One of the methods for forming this planarized oxide film is a method using solution coating.
従来の方法は、酸化ケイ素含有溶液を基板上に塗布し、
前熱処理（２００°Ｃ）した後、酸素雰囲気中で炉周囲
からの加熱、すなわち、塗布膜表面からの加熱による熱
処理（６００〜９００°Ｃ）を行っていた。The traditional method is to apply a silicon oxide-containing solution onto a substrate;
After pre-heat treatment (200°C), heat treatment (600 to 900°C) was performed by heating from around the furnace in an oxygen atmosphere, that is, by heating from the surface of the coating film.
上述した従来の方法は、形成されたシリコン酸化膜の膜
中にわずかながら有機物が残ったシ、あるいは充分な酸
化が行なわれないという欠点がある。このため、形成さ
れた膜の電気的絶縁性が悪い。The conventional method described above has the disadvantage that a small amount of organic matter remains in the formed silicon oxide film or that sufficient oxidation is not performed. Therefore, the electrical insulation of the formed film is poor.
本発明の薄膜の形成方法は、酸化ケイ素含有溶液を基板
に塗布し、前熱処理後、酸素雰囲気中、かつ低圧水銀灯
で発せられる１８５０ｍの紫外光照射下で該基板下から
の加熱により熱処理する工程を有している。The method for forming a thin film of the present invention is a step of applying a silicon oxide-containing solution to a substrate, and after pre-heat treatment, heat treatment is performed by heating from below the substrate in an oxygen atmosphere and under irradiation of 1850m ultraviolet light emitted from a low-pressure mercury lamp. have.
次に１本発明について図面を参照して説明する。 Next, one embodiment of the present invention will be explained with reference to the drawings.
第１図は、本発明の一実施例に用いた紫外光照射／熱処
理装置の断面図である。FIG. 1 is a sectional view of an ultraviolet light irradiation/heat treatment apparatus used in an embodiment of the present invention.
本装置は、ヒーター１を内蔵したサセプター２と、紫外
光照射のための低圧水銀灯３と、酸素ガスを導入する酸
素ガス導入口４及び、酸素ガスを排気する排気口５とか
ら構成されている。This device is composed of a susceptor 2 with a built-in heater 1, a low-pressure mercury lamp 3 for irradiating ultraviolet light, an oxygen gas inlet 4 for introducing oxygen gas, and an exhaust port 5 for exhausting oxygen gas. .
前熱処理後の酸化ケイ素含有溶液６をもつ基板７はサセ
プタ２上に設置される。The substrate 7 with the silicon oxide-containing solution 6 after the preheat treatment is placed on the susceptor 2 .
本装置の特徴は酸化ケイ素含有溶液６が基板７を通して
加熱され、かつ、酸素雰囲気中で紫外光が照射されるこ
とにある。The feature of this device is that the silicon oxide-containing solution 6 is heated through the substrate 7 and is irradiated with ultraviolet light in an oxygen atmosphere.
本実施例に於いて、用いられた酸化ケイ素含有溶液は、
１０％のケイ素成分、２％のホウ素成分、１％のリン成
分を含むアルコラードを主成分とするものである。この
溶液をシリコン基板に毎分３０００回転で回転塗布し、
窒素中、２００’Ｃの前処理を行なった後、上記の紫外
光照射／熱処理装置で熱処理を行ない、膜形成した。In this example, the silicon oxide-containing solution used was:
The main component is Alcolade, which contains 10% silicon component, 2% boron component, and 1% phosphorus component. This solution was applied to a silicon substrate by rotating at 3000 revolutions per minute.
After pretreatment at 200'C in nitrogen, heat treatment was performed using the above-mentioned ultraviolet light irradiation/heat treatment apparatus to form a film.
この熱処理条件として、酸素ガス流量毎分２０１１低圧
水銀灯から発せられる波長１８５１１ｍ光の強度１０
（ｍ ｗ ／ ｃ ｍ２）、サセプタ温度６０００Ｃが
とられた。As this heat treatment condition, the oxygen gas flow rate is 2011 per minute, and the intensity of light emitted from a low-pressure mercury lamp with a wavelength of 18511 m is 10
(m w / cm m2) and a susceptor temperature of 6000C.
ここで、本発明の方法で形成されたシリコン酸化膜の特
性を評価したところ、従来の方法で形成したシリコン酸
化膜のもＯＫ比べ、例えば、もれ電流は、図２に示す様
に一桁以上小さいものである等、格段忙優れたものであ
った。Here, when we evaluated the characteristics of the silicon oxide film formed by the method of the present invention, we found that it was OK compared to the silicon oxide film formed by the conventional method.For example, the leakage current was one order of magnitude as shown in Figure 2. It was much smaller and was much more efficient.
以上説明したように本発明は、酸化ケイ素含有溶液を基
板に塗布、前熱処理後、酸素雰囲気中かつ紫外光照射下
で基板下からの加熱による熱処理するため、
（１）酸化ケイ素含有溶液に含まれている有機成分の分
解気化を促進する効果。As explained above, the present invention applies a silicon oxide-containing solution to a substrate, performs a pre-heat treatment, and then performs a heat treatment by heating from below the substrate in an oxygen atmosphere and under ultraviolet light irradiation. The effect of promoting the decomposition and vaporization of organic components contained in
（２）酸素の紫外光照射で形成されるＯ ファイカルに
よる酸化促進の効果。(2) Effect of promoting oxidation by O phycal formed by irradiation of oxygen with ultraviolet light.
がある。There is.
その結果、電気的絶縁性の優れたシリコン酸化膜を、溶
液塗布法によって形成することが出来る効果がある。As a result, a silicon oxide film with excellent electrical insulation properties can be formed by a solution coating method.
第１図は、本発明の実施例に用いた紫外光照射／熱処理
装置の断面図、第２図は本発明の一実施例により形成し
た膜のＩ−Ｖ特性を示すグラフである。FIG. 1 is a cross-sectional view of an ultraviolet light irradiation/heat treatment apparatus used in an example of the present invention, and FIG. 2 is a graph showing IV characteristics of a film formed according to an example of the present invention.
Claims (3)
気中で、かつ紫外光照射下で熱処理することを特徴とす
る薄膜の形成方法。(1) A method for forming a thin film, which comprises applying a silicon oxide-containing solution onto a substrate and heat-treating it in an oxygen atmosphere and under irradiation with ultraviolet light.
を用いることを特徴とする特許請求の範囲第１項記載の
薄膜の形成方法。(2) The method for forming a thin film according to claim 1, characterized in that the ultraviolet light is a light of a wavelength of 185 nm from a low-pressure mercury lamp.
加熱であることを特徴とする特許請求の範囲第１項記載
の薄膜の形成方法。(3) The method for forming a thin film according to claim 1, wherein the heat treatment is heating from a susceptor on which the substrate is placed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61010410A JPH0831453B2 (en) | 1986-01-20 | 1986-01-20 | Thin film formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61010410A JPH0831453B2 (en) | 1986-01-20 | 1986-01-20 | Thin film formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62166529A true JPS62166529A (en) | 1987-07-23 |
| JPH0831453B2 JPH0831453B2 (en) | 1996-03-27 |
Family
ID=11749373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61010410A Expired - Fee Related JPH0831453B2 (en) | 1986-01-20 | 1986-01-20 | Thin film formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0831453B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6450428A (en) * | 1987-08-20 | 1989-02-27 | Tokyo Noukou Univ | Oxide thin film having high permittivity and formation thereof |
| JPS6457626A (en) * | 1987-08-28 | 1989-03-03 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH01216544A (en) * | 1988-02-24 | 1989-08-30 | Sharp Corp | Forming method for passivation film of semiconductor element |
| JPH01290772A (en) * | 1988-05-17 | 1989-11-22 | Koujiyundo Kagaku Kenkyusho:Kk | Method and device for reforming silicon oxide film |
| JPH0472623A (en) * | 1990-07-12 | 1992-03-06 | Mitsubishi Electric Corp | Method and device for manufacturing semiconductor device |
| US5433812A (en) * | 1993-01-19 | 1995-07-18 | International Business Machines Corporation | Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4996673A (en) * | 1973-01-16 | 1974-09-12 | ||
| JPS49107176A (en) * | 1973-02-13 | 1974-10-11 |
-
1986
- 1986-01-20 JP JP61010410A patent/JPH0831453B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4996673A (en) * | 1973-01-16 | 1974-09-12 | ||
| JPS49107176A (en) * | 1973-02-13 | 1974-10-11 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6450428A (en) * | 1987-08-20 | 1989-02-27 | Tokyo Noukou Univ | Oxide thin film having high permittivity and formation thereof |
| JPS6457626A (en) * | 1987-08-28 | 1989-03-03 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH01216544A (en) * | 1988-02-24 | 1989-08-30 | Sharp Corp | Forming method for passivation film of semiconductor element |
| JPH01290772A (en) * | 1988-05-17 | 1989-11-22 | Koujiyundo Kagaku Kenkyusho:Kk | Method and device for reforming silicon oxide film |
| JPH0472623A (en) * | 1990-07-12 | 1992-03-06 | Mitsubishi Electric Corp | Method and device for manufacturing semiconductor device |
| US5433812A (en) * | 1993-01-19 | 1995-07-18 | International Business Machines Corporation | Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0831453B2 (en) | 1996-03-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |