JPS6457626A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6457626A JPS6457626A JP21283687A JP21283687A JPS6457626A JP S6457626 A JPS6457626 A JP S6457626A JP 21283687 A JP21283687 A JP 21283687A JP 21283687 A JP21283687 A JP 21283687A JP S6457626 A JPS6457626 A JP S6457626A
- Authority
- JP
- Japan
- Prior art keywords
- organosilanol
- organic groups
- layer wiring
- baking
- spread
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To decompose all organic groups contained organosilanol, and enable forming a stable film approximate to SiO2 at the time of annealing organosilanol having organic groups, by spreading organosilanol on a substrate on which a first layer wiring is formed, and baking it in an ozone atmosphere. CONSTITUTION:Organosilanol 25 having organic groups is spread on a substrate on which a first layer wiring 22 is formed, and baking is performed by exposing it to an ozone atmosphere. For example, on the ground 21 of a semiconductor substrate, a first layer wiring 22 of aluminum is formed, on which a presser foot 23 for protrusion composed of SiO2 film is arranged by sputtering and the like. Thereon organosilanol having organic groups is spread to form a flat film 25, and then the semiconductor substrate 21 is exposed to the ozone atmosphere. At this time, from an ozonizer 11, O2+O3 is introduced into a reaction chamber 12, and a wafer 14 is arranged on a hot plate 13 in the reaction chamber 12. Baking at 150-300 deg.C is applied, for about three minutes, to the organosilanol having organic groups spread on the wafer 14. After that, a second layer wiring 26 is formed via a PSG film 24.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21283687A JPS6457626A (en) | 1987-08-28 | 1987-08-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21283687A JPS6457626A (en) | 1987-08-28 | 1987-08-28 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6457626A true JPS6457626A (en) | 1989-03-03 |
Family
ID=16629154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21283687A Pending JPS6457626A (en) | 1987-08-28 | 1987-08-28 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6457626A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05166807A (en) * | 1991-12-13 | 1993-07-02 | Sharp Corp | Manufacture of thin film |
| US6939817B2 (en) | 2003-05-08 | 2005-09-06 | Micron Technology, Inc. | Removal of carbon from an insulative layer using ozone |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62133736A (en) * | 1985-12-05 | 1987-06-16 | Nec Corp | Flattened multilayer interconnection forming method |
| JPS62166529A (en) * | 1986-01-20 | 1987-07-23 | Nec Corp | Formation of thin film |
| JPS637883A (en) * | 1986-06-30 | 1988-01-13 | Japan Synthetic Rubber Co Ltd | Method for modifying film |
| JPS63289939A (en) * | 1987-05-22 | 1988-11-28 | Tokyo Ohka Kogyo Co Ltd | Method for qualitative improvement on silica coating |
-
1987
- 1987-08-28 JP JP21283687A patent/JPS6457626A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62133736A (en) * | 1985-12-05 | 1987-06-16 | Nec Corp | Flattened multilayer interconnection forming method |
| JPS62166529A (en) * | 1986-01-20 | 1987-07-23 | Nec Corp | Formation of thin film |
| JPS637883A (en) * | 1986-06-30 | 1988-01-13 | Japan Synthetic Rubber Co Ltd | Method for modifying film |
| JPS63289939A (en) * | 1987-05-22 | 1988-11-28 | Tokyo Ohka Kogyo Co Ltd | Method for qualitative improvement on silica coating |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05166807A (en) * | 1991-12-13 | 1993-07-02 | Sharp Corp | Manufacture of thin film |
| US6939817B2 (en) | 2003-05-08 | 2005-09-06 | Micron Technology, Inc. | Removal of carbon from an insulative layer using ozone |
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