JP3225331B2 - Method of forming SOG film and ozone treatment apparatus - Google Patents
Method of forming SOG film and ozone treatment apparatusInfo
- Publication number
- JP3225331B2 JP3225331B2 JP35021593A JP35021593A JP3225331B2 JP 3225331 B2 JP3225331 B2 JP 3225331B2 JP 35021593 A JP35021593 A JP 35021593A JP 35021593 A JP35021593 A JP 35021593A JP 3225331 B2 JP3225331 B2 JP 3225331B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- sog
- sog film
- ozone
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、一般に半導体デバイス
製造における平坦化絶縁膜として用いられているＳＯＧ
膜を形成するための技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an SOG generally used as a planarizing insulating film in semiconductor device manufacturing.
The present invention relates to a technique for forming a film.
【０００２】[0002]
【従来の技術】従来より、半導体デバイスの多層配線構
造において層間絶縁膜を形成する際の平坦化技術として
ＳＯＧ（Spin On Glass ）塗布法が用いられている。こ
のＳＯＧ塗布法は、一般には、図３に示すように、半導
体基板の配線パターン面上にプラズマＣＶＤまたはＴＥ
ＯＳによって堆積されたＳｉＯ2 膜を下地として、この
下地膜の上にＳＯＧを所望の膜厚に塗布し、塗布したＳ
ＯＧ膜をアニール（焼きしめ）してキュアし、次にエッ
チバックにより配線付近の凸面を削って平坦面の層間絶
縁膜とするものである。この種のエッチバックでは、図
示のように、下地膜を露出させずにＳＯＧ膜を全面に残
すのが普通である。多層配線構造の場合は、上記のよう
にしてＳＯＧ膜を形成した後、図４に示すように、プラ
ズマＣＶＤによってＳｉＯ2 膜をＳＯＧ膜の上に被膜
し、このＳｉＯ2 膜にビアコンタクトを開けてから、上
層側の配線をパターニングするようにしている。2. Description of the Related Art Conventionally, an SOG (Spin On Glass) coating method has been used as a planarization technique for forming an interlayer insulating film in a multilayer wiring structure of a semiconductor device. This SOG coating method generally uses plasma CVD or TE on a wiring pattern surface of a semiconductor substrate as shown in FIG.
With the SiO2 film deposited by the OS as a base, SOG is applied to a desired thickness on the base film, and the S
The OG film is annealed (baked) and cured, and then the convex surface near the wiring is removed by etch back to form a flat interlayer insulating film. In this type of etchback, figure
As shown, the SOG film is left on the entire surface without exposing the underlying film.
Usually it is. In the case of the multi-layer wiring structure, after forming the SOG film as described above, as shown in FIG. 4, a SiO2 film is coated on the SOG film by plasma CVD, and a via contact is opened in the SiO2 film. The upper wiring is patterned.
【０００３】[0003]
【発明が解決しようとする課題】ところで、ＳＯＧの材
料には、有機成分を基本的に含んでいる有機系のものと
有機成分を基本的に含まない無機系のものとがある。無
機系のＳＯＧ膜は、無機物だけの緻密な組成で、吸湿性
が小さいという利点はあるが、焼きしめ時の応力によっ
て収縮しやすいため、１度の塗布で厚い膜を形成するの
が難しく、２度塗りを余儀なくされるという欠点があ
る。The SOG material includes an organic material basically containing an organic component and an inorganic material basically containing no organic component. Inorganic SOG films have a dense composition of only inorganic substances and have the advantage of low hygroscopicity, but they tend to shrink due to stress during baking, so it is difficult to form a thick film with a single application, There is a drawback that two coatings are required.
【０００４】有機系のＳＯＧ膜は、無機系のＳＯＧ膜と
は逆に、焼きしめ時の応力によって収縮し難いため１度
塗りで十分に厚い膜が得られるが、有機物を含んでいる
ために、あるいは膜中に未分解の有機物が幾らかでも残
っているときは、エッチバックによってＳＯＧ膜の表面
に有機物が堆積するという不具合がある。つまり、ＳＯ
Ｇ膜のエッチバックにおいては、エッチングガスたとえ
ばＣＦ4 とＳＯＧ中の無機物ＳｉＯとの反応生成物は気
化するが、エッチングガスと有機物とは基本的には反応
せず、たとえ反応しても反応生成物（有機化合物）は気
化せずにそのまま残るため、どうしてもＳＯＧ膜の表面
にミクロンレベルの厚さではあるが有機物が堆積してし
まう。このような有機物の堆積膜の上に、次の工程でプ
ラズマＣＶＤ膜を成膜したならば、膜同士の密着性は良
くなく、容易に膜剥がれを起こしやすい。An organic SOG film, unlike an inorganic SOG film, is unlikely to shrink due to stress during baking, so that a sufficiently thick film can be obtained by one coating, but contains an organic substance. Or any remaining undecomposed organic matter in the film
In this case, there is a problem that an organic substance is deposited on the surface of the SOG film by the etch back. That is, SO
In the etching back of the G film, the etching gas such as a reaction product between CF4 and the inorganic SiO in SOG is vaporized, but the etching gas and the organic material do not basically react with each other. Since the (organic compound) remains as it is without being vaporized, an organic substance is deposited on the surface of the SOG film although the thickness is on the order of microns. If a plasma CVD film is formed on such an organic deposited film in the next step, the adhesion between the films is not good, and the film is easily peeled off.
【０００５】[0005]
【０００６】本発明は、かかる問題点に鑑みてなされた
もので、半導体デバイス製造において層間膜を平坦化す
るだけでなく、その平坦面の上に形成される上層膜の成
膜性を向上させるＳＯＧ膜の形成方法を提供することを
目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has been made in view of flattening an interlayer film in semiconductor device manufacturing.
In addition to forming the upper layer film formed on the flat surface,
An object of the present invention is to provide a method for forming an SOG film that improves film properties .
【０００７】本発明の別の目的は、本発明のＳＯＧ膜形
成方法におけるオゾン処理を良好に実施するためのオゾ
ン処理装置を提供することにある。 Another object of the present invention is to provide a SOG film type according to the present invention.
Ozone treatment for good ozone treatment
To provide a processing device.
【０００８】[0008]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明の第１の方法は、半導体デバイスの層間絶
縁膜としてＳＯＧ膜を形成する方法において、所定の下
地膜の上にＳＯＧを塗布する第１の工程と、前記第１の
工程の後に前記ＳＯＧ膜をアニールしてキュアする第２
の工程と、前記第２の工程の後に前記下地膜を露出させ
ない程度に前記ＳＯＧ膜をエッチバックして膜表面を平
坦化する第３の工程と、前記第３の工程の後に、前記Ｓ
ＯＧ膜を所定温度に加熱しながらオゾンの雰囲気に晒し
て、前記ＳＯＧ膜の膜表面および膜内部から有機物を除
去する第４の工程とを有する方法とした。According to a first aspect of the present invention, there is provided a method of forming an SOG film as an interlayer insulating film of a semiconductor device, comprising the steps of: A second step of annealing and curing the SOG film after the first step.
And exposing the base film after the second step.
A third step of flattening the film surface by etching back the SOG film to an extent not
A fourth step of exposing the OG film to an ozone atmosphere while heating the OG film to a predetermined temperature to remove organic substances from the surface and the inside of the SOG film.
【０００９】また、本発明の第２の方法は、半導体デバ
イスの層間絶縁膜としてＳＯＧ膜を形成する方法におい
て、所定の下地膜の上にＳＯＧを塗布する第１の工程
と、前記第１の工程の後に前記ＳＯＧ膜を第１の温度に
加熱して乾燥させる第２の工程と、前記第２の工程の後
に前記ＳＯＧ膜をアニールしてキュアする第３の工程
と、前記第３の工程の後に前記下地膜を露出させない程
度に前記ＳＯＧ膜をエッチバックして膜表面を平坦化す
る第４の工程と、前記第４の工程の後に、前記ＳＯＧ膜
を前記第１の温度よりも高い第２の温度に加熱しながら
オゾンの雰囲気に晒して、前記ＳＯＧ膜の膜表面および
膜内部から有機物を除去する第５の工程とを有する方法
とした。According to a second method of the present invention, in the method for forming an SOG film as an interlayer insulating film of a semiconductor device, a first step of applying SOG on a predetermined base film; A second step of heating and drying the SOG film at a first temperature after the step, a third step of annealing and curing the SOG film after the second step, and a third step Not to expose the underlayer after
A fourth step of etching back the SOG film to planarize the film surface each time, and heating the SOG film to a second temperature higher than the first temperature after the fourth step. Exposure to an atmosphere of ozone, the surface of the SOG film and
A fifth step of removing organic matter from the inside of the film .
【００１０】[0010]
【００１１】[0011]
【００１２】[0012]
【００１３】[0013]
【００１４】上記第１または第２のＳＯＧ膜形成方法に
おいて、好ましくは、前記ＳＯＧ膜を加熱しながらオゾ
ンの雰囲気に晒して前記ＳＯＧ膜から有機物を除去する
工程を減圧下で行ってよい。In the first or second SOG film forming method, preferably, the step of removing the organic matter from the SOG film by exposing the SOG film to an ozone atmosphere while heating the SOG film may be performed under reduced pressure.
【００１５】本発明のオゾン処理装置は、被処理基板上
に塗布されたＳＯＧ膜から有機物を除去するためのオゾ
ン処理を行うオゾン処理装置であって、前記オゾン処理
を行うために前記被処理基板を収容する密閉可能な処理
室と、前記処理室内で前記被処理基板を載置して支持す
る載置台と、前記処理室内で前記被処理基板を加熱する
ためのヒータと、前記被処理基板の表面が所定の温度に
加熱されるように前記ヒータの発熱を制御する温度制御
手段と、前記載置台の外側で周回方向に延在し、前記処
理室の外からオゾンを導入し、導入したオゾンを前記周
回方向均一に所定の流量で前記載置台上の前記被処理基
板の表面に供給するガス導入室と、前記ガス導入室にオ
ゾンを所定の流量で供給するオゾン供給部と、前記処理
室の前記載置台の真上の天井面に設けられたガス排気口
と、前記ガス排気口より前記処理室内のガスを排気する
排気手段とを具備する構成とした。 [0015] The ozone treatment apparatus of the present invention can be used on a substrate to be treated.
For removing organic matter from the SOG film applied to the substrate
An ozone treatment apparatus for performing ozone treatment, wherein the ozone treatment
Process that accommodates the substrate to be processed in order to perform
A processing chamber, wherein the substrate to be processed is placed and supported in the processing chamber.
A mounting table and heating the substrate to be processed in the processing chamber
And a surface of the substrate to be processed to a predetermined temperature.
Temperature control for controlling heat generation of the heater so as to be heated
Means extending in the circumferential direction outside the mounting table;
Ozone is introduced from outside the science room, and the introduced ozone is
The substrate to be processed on the mounting table at a predetermined flow rate uniformly in the turning direction.
A gas introduction chamber for supplying to the surface of the plate, and an
An ozone supply unit for supplying the zon at a predetermined flow rate;
Gas exhaust port provided on the ceiling just above the table above the room
Exhausting the gas in the processing chamber from the gas exhaust port
And an exhaust unit.
【００１６】[0016]
【作用】エッチバック工程前のＳＯＧ膜内に有機物が残
存していると、エッチバックによって有機物がＳＯＧ膜
の外に出てきて膜表面に堆積する。本発明では、エッチ
バック後にＳＯＧ膜を所定温度に加熱しながらオゾンの
雰囲気に晒す処理を行うことで、オゾンの分解によって
生じた酸素原子ラジカルと有機物との化学反応により、
ＳＯＧ膜表面に堆積していた有機物を効果的に除去でき
る。さらに、オゾンの分解によって生じた酸素原子ラジ
カルが膜内部に存在する有機物とも反応するので、膜内
部に残存している有機物をも除去できる。したがって、
ＳＯＧ膜の上に上層膜たとえばプラズマＣＶＤ膜を成膜
するに際しては、界面に有機物が存在しないため膜同士
の密着性がよく、膜剥がれのない多層膜を得ることがで
きる。[Action] Organic substances remain in the SOG film before the etch-back process.
If it exists , the organic matter comes out of the SOG film by the etch back and deposits on the film surface. In the present invention, by performing a process of exposing the SOG film to an ozone atmosphere while heating the SOG film to a predetermined temperature after the etch-back, a chemical reaction between an oxygen atom radical generated by the decomposition of ozone and an organic substance is performed.
Organic substances deposited on the surface of the SOG film can be effectively removed. Furthermore, since the oxygen atom radicals generated by the decomposition of ozone also react with the organic substances existing inside the film, the organic substances remaining inside the film can be removed. Therefore,
When an upper layer film, for example, a plasma CVD film is formed on the SOG film, since there is no organic substance at the interface, the adhesion between the films is good, and a multilayer film without film peeling can be obtained.
【００１７】[0017]
【００１８】本発明のオゾン処理装置においては、上記
の構成により、特に被処理基板の表面を所望の温度に加
熱しながら基板の周りから基板表面に均一にオゾンを供
給する構成により、ＳＯＧ膜内部から有機物の堆積膜を
良好に除去できると同時に、ＳＯＧ膜内部からも有機物
を効果的に除去することができる。 In the ozone treatment apparatus of the present invention,
In particular, the surface of the substrate to be processed is heated to a desired temperature.
Apply ozone uniformly around the substrate surface while heating.
The organic material deposited film from inside the SOG film
Organic substances can be removed from inside the SOG film at the same time
Can be effectively removed.
【００１９】[0019]
【実施例】以下、図１および図２を参照して本発明の実
施例を説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS.
【００２０】図１は、本発明の一実施例によるＳＯＧ膜
の形成方法においてＳＯＧ膜から有機物を除去するため
のオゾン処理を行う装置の構成を示す。FIG. 1 shows the configuration of an apparatus for performing ozone treatment for removing organic substances from an SOG film in a method for forming an SOG film according to an embodiment of the present invention.
【００２１】この処理装置は、密閉可能な処理室または
容器１０を有し、この処理室１０の中央に、載置台とし
て円盤状の熱板１２を配設してなる。熱板１２は、熱伝
導率の高い金属たとえばアルミニウムからなり、その上
面には被処理基板として表面にＳＯＧ膜を有する半導体
ウエハＷが載置される。処理室１０内で、熱板１２の中
には半導体ウエハＷを加熱するためのヒータたとえば発
熱抵抗体１４が内蔵されており、熱板１２の外側には半
導体ウエハＷに処理ガスまたは雰囲気ガスとしてオゾン
を供給するためのガス導入室１６が周回方向に設けられ
ている。This processing apparatus has a process chamber or vessel 10 that can be sealed, and a disk-shaped hot plate 12 is disposed in the center of the process chamber 10 as a mounting table. The hot plate 12 is made of a metal having a high thermal conductivity, for example, aluminum, and a semiconductor wafer W having an SOG film on the surface as a substrate to be processed is placed on the upper surface thereof. In the processing chamber 10, a heater for heating the semiconductor wafer W, for example, a heating resistor 14 is built in the heating plate 12. Outside the heating plate 12, the semiconductor wafer W is treated as a processing gas or an atmosphere gas. A gas introduction chamber 16 for supplying ozone is provided in a circumferential direction.
【００２２】処理室１０の外には、オゾンの原料として
酸素を供給する酸素供給源１８、この酸素供給源１８よ
り供給される酸素を基にオゾンを生成するオゾン発生器
２０および処理室１０に供給されるオゾンの流量を制御
するためのガス流量調整器２２が配管２４を介して直列
に処理室１０内のガス導入室１６に接続され、配管２４
に開閉弁２６が介設されている。処理室１０の天井面中
央部には排気口１０ａが設けられており、この排気口１
０ａに配管２８を介して真空ポンプ等からなる排気装置
３０が接続されている。An oxygen supply source 18 for supplying oxygen as a raw material for ozone, an ozone generator 20 for generating ozone based on oxygen supplied from the oxygen supply source 18 and a processing chamber 10 are provided outside the processing chamber 10. A gas flow controller 22 for controlling the flow rate of the supplied ozone is connected in series to the gas introduction chamber 16 in the processing chamber 10 via a pipe 24,
An on-off valve 26 is interposed. An exhaust port 10 a is provided at the center of the ceiling surface of the processing chamber 10.
An exhaust device 30 including a vacuum pump or the like is connected to Oa via a pipe 28.
【００２３】オゾン発生器２０より配管２４を通って処
理室１０内のガス導入室１６に導入されたオゾンは、ガ
ス導入室１６の上面に所定ピッチで設けられた多数のガ
ス噴射口１６ａより周回方向均一に所定の流量で噴き出
して被処理体（半導体ウエハＷ）の表面付近を流れ、天
井の排気口１０ａから排出される。The ozone introduced from the ozone generator 20 into the gas introduction chamber 16 in the processing chamber 10 through the pipe 24 circulates through a number of gas injection ports 16 a provided at a predetermined pitch on the upper surface of the gas introduction chamber 16. The gas is ejected at a predetermined flow rate in a uniform direction, flows near the surface of the object to be processed (semiconductor wafer W), and is discharged from the exhaust port 10a on the ceiling.
【００２４】また、処理室１０内の熱板１２に内蔵され
ているヒータ（発熱抵抗体１４）は室外に設けられた温
度制御装置３２に電気的に接続され、温度制御装置３２
の制御によって被処理体（半導体ウエハＷ）の表面が所
望の温度に加熱されるようになっている。A heater (heating resistor 14) built in the hot plate 12 in the processing chamber 10 is electrically connected to a temperature control device 32 provided outside the chamber.
Is controlled so that the surface of the object to be processed (semiconductor wafer W) is heated to a desired temperature.
【００２５】かかる処理室１０において、被処理体（半
導体ウエハＷ）を所定温度に加熱しながら所定の圧力
（減圧）の下で所定濃度のオゾンに所定時間晒すこと
で、オゾンの熱分解によって生じる酸素原子ラジカルＯ
＊ がウエハ表面部のＳＯＧ膜に付着または含有されて
いる有機物ＣL ＨM ＯNと良好に酸化反応し（反応生
成物ＣＯ2 ，Ｈ2 Ｏは排気口１０ａより排出される）、
ＳＯＧ膜の膜全体から有機物が効果的に除去される。In the processing chamber 10, the object to be processed (semiconductor wafer W) is exposed to ozone of a predetermined concentration under a predetermined pressure (reduced pressure) for a predetermined time while being heated to a predetermined temperature, thereby being generated by thermal decomposition of ozone. Oxygen atom radical O
* Is good oxidation and organic C L H M O N being attached to or contained in the SOG film on the wafer surface portion (the reaction product CO2, H2 O is discharged from the exhaust port 10a),
Organic substances are effectively removed from the entire SOG film.
【００２６】本発明の一実施例によれば、常法の塗布工
程たとえばスピンコート法によって所定の下地膜たとえ
ばＳｉＯ2 膜上に有機系のＳＯＧ膜を所望の膜厚に塗布
し、次に常法のアニール工程たとえば縦型炉による熱処
理によってＳＯＧ膜をキュアし、次に常法のエッチバッ
クたとえばＣＦ4 をエッチングガスとして用いるコール
ドウォール式のドライエッチングによってＳＯＧ膜の表
面を平坦化した半導体ウエハＷが、本処理装置において
オゾン処理を施されてよい。According to one embodiment of the present invention, an organic SOG film is applied to a desired thickness on a predetermined base film, for example, an SiO 2 film by a conventional coating process, for example, a spin coating method, The semiconductor wafer W is obtained by curing the SOG film by an annealing step, for example, a heat treatment in a vertical furnace, and then flattening the surface of the SOG film by a conventional etching back, for example, a cold wall type dry etching using CF4 as an etching gas. Ozone treatment may be performed in the treatment apparatus.
【００２７】この場合、エッチバックによってＳＯＧ膜
表面には有機物が堆積しており、ＳＯＧ膜内部にも相当
の有機物が残っている。本実施例においては、処理条件
を適当な値に選ぶことによって、たとえば処理面温度を
１５０〜１４００゜Ｃ、オゾン流量を１５〜３０リット
ル／分、オゾン濃度を５〜２０ｗｔ％、処理面近傍の圧
力を２００〜７００Torr、処理時間を１０〜１８０秒の
範囲内で選ぶことによって、被処理体（半導体ウエハ
Ｗ）のＳＯＧ膜表面から有機物の堆積膜を良好に除去で
きると同時に、ＳＯＧ膜内部からも有機物を効果的に除
去し、ＳＯＧ膜の膜質を向上させることができる。In this case, an organic substance is deposited on the surface of the SOG film by the etch back, and a considerable amount of organic substance remains inside the SOG film. In the present embodiment, for example, by selecting appropriate treatment conditions, the treatment surface temperature is 150 to 1400 ° C., the ozone flow rate is 15 to 30 l / min, the ozone concentration is 5 to 20 wt%, By selecting the pressure within the range of 200 to 700 Torr and the processing time within the range of 10 to 180 seconds, it is possible to remove the organic deposited film from the surface of the SOG film of the object to be processed (semiconductor wafer W) satisfactorily and at the same time, from the inside of the SOG film. Can effectively remove organic substances and improve the quality of the SOG film.
【００２８】[0028]
【００２９】[0029]
【００３０】図２に、本発明によるオゾン処理を受けた
ＳＯＧ膜と受けないＳＯＧ膜とについてそれぞれの赤外
線吸収スペクトルを示す。本発明によるオゾン処理を受
けないで形成されたＳＯＧ膜（参考例）の場合は、有機
物である−ＣＨ3 結合およびＣＨ3 −Ｓｉ−ＣＨ3 結合
にそれぞれ対応する吸収ピークが存在するのに加えて、
無機物の結合においても鎖の長いＯ−Ｓｉ−Ｏ結合と鎖
の短いＳｉ−Ｏ結合にそれぞれ対応する２つのピークが
存在しているのがわかる。FIG. 2 shows the infrared absorption spectra of the SOG film subjected to the ozone treatment according to the present invention and the SOG film not subjected to the ozone treatment. In the case of the SOG film formed without being subjected to the ozone treatment according to the present invention (Reference Example), in addition to the absorption peaks corresponding to the organic substances -CH3 bond and CH3-Si-CH3 bond, respectively,
It can be seen that two peaks corresponding to the O-Si-O bond having a long chain and the Si-O bond having a short chain also exist in the inorganic bond.
【００３１】これに対し、本発明によるオゾン処理を受
けて形成されたＳＯＧ膜（実施例）の場合は、有機物の
−ＣＨ3 結合やＣＨ3 −Ｓｉ−ＣＨ3 結合に対応する吸
収ピークが無いだけでなく、無機物においても鎖の短い
Ｓｉ−Ｏ結合に対応する吸収ピークが無くなり、そのぶ
んＯ−Ｓｉ−Ｏ結合に対応する吸収ピークが増大してい
るのがわかる。つまり、本発明のオゾン処理によれば、
オゾンの熱分解によって生じる酸素原子ラジカルＯ＊
がＳＯＧ膜内の有機物ＣL ＨM ＯNと反応することで
有機物基（−ＣＨ3 ）が除去または解離され、その有機
物基の抜けた場所でＳｉとＯが再結合して、Ｓｉ−Ｏ結
合の鎖が長くなっていることがわかる。On the other hand, in the case of the SOG film formed by the ozone treatment according to the present invention (Example), not only is there no absorption peak corresponding to the -CH3 bond or CH3-Si-CH3 bond of the organic substance, but also there is no absorption peak. It can also be seen that the absorption peak corresponding to the short-chain Si—O bond disappears even in the inorganic substance, and the absorption peak corresponding to the O—Si—O bond increases by that much. That is, according to the ozone treatment of the present invention,
Oxygen atom radical O * generated by thermal decomposition of ozone
There organics group (--CH3) is removed or dissociated by reaction with organic C L H M O N in the SOG film, in missing location organics groups Si and O are recombined, Si-O bonds It can be seen that the chain is longer.
【００３２】また、本発明の有機物除去処理は、酸素原
子ラジカルによる化学反応で有機物を除去する方法であ
るから、ＳＯＧ膜に物理的な損傷を与えるおそれはな
い。Further, the organic substance removing treatment of the present invention is a method of removing organic substances by a chemical reaction using oxygen atom radicals, and therefore does not cause physical damage to the SOG film.
【００３３】このように、エッチバック後のＳＯＧ膜に
本実施例によるオゾン処理を施すことで、ＳＯＧ膜に損
傷を与えずに膜表面から有機物を効果的に除去できるた
め、次の工程でＳＯＧ膜の上にプラズマＣＶＤ膜を成膜
しても、膜同士の密着性は非常によく、膜剥がれ等の不
具合が生じるおそれはなく、安定した多層配線構造を得
ることができる。As described above, the SOG film after the etch back
By performing the ozone treatment according to the present embodiment, the SOG film is damaged.
Even if a plasma CVD film is formed on the SOG film in the next step, the adhesion between the films is very good because organic substances can be effectively removed from the film surface without damaging the film. Thus, there is no possibility that a problem such as film peeling occurs, and a stable multilayer wiring structure can be obtained.
【００３４】上記した実施例は有機系のＳＯＧ膜に係る
ものであったが、本発明は無機系のＳＯＧ膜にももちろ
ん適用可能である。Although the above-described embodiment relates to an organic SOG film, the present invention can of course be applied to an inorganic SOG film.
【００３５】[0035]
【発明の効果】以上説明したように、本発明におけるＳ
ＯＧ膜の形成方法によれば、エッチバック後のＳＯＧ膜
に対してオゾンを用いる有機物除去処理を施すようにし
たので、ＳＯＧ膜を平坦化するだけでなくその平坦面の
上に形成される上層膜の成膜性を向上させることができ
る。 As described above, S in the present invention is
According to the method of forming an OG film, the SOG film after etch back
To remove organic matter using ozone
Therefore, not only is the SOG film flattened,
It is possible to improve the film forming property of the upper layer film formed on
You.
【００３６】また、本発明のオゾン処理装置によれば、
ＳＯＧ膜表面から有機物の堆積物を良好に除去できると
同時に、ＳＯＧ膜内部からも有機物を効果的に除去し
て、膜質を向上させることができる。 According to the ozone treatment apparatus of the present invention,
If organic deposits can be successfully removed from the SOG film surface
At the same time, organic substances are effectively removed from inside the SOG film.
Thus, the film quality can be improved.
【図１】本発明の一実施例によるＳＯＧ膜の形成方法に
おいてＳＯＧ膜から有機物を除去するためのオゾン処理
を行う装置の構成を示す図である。FIG. 1 is a view showing a configuration of an apparatus for performing an ozone treatment for removing an organic substance from an SOG film in a method for forming an SOG film according to an embodiment of the present invention.
【図２】本発明によるオゾン処理を受けたＳＯＧ膜と受
けないＳＯＧ膜とについてそれぞれの赤外線吸収スペク
トルを示す図である。FIG. 2 shows infrared absorption spectra of an SOG film subjected to ozone treatment according to the present invention and an SOG film not subjected to ozone treatment.
【図３】層間絶縁膜を平坦化するためのＳＯＧ塗布法の
工程を示す図である。FIG. 3 is a view showing a step of an SOG coating method for flattening an interlayer insulating film.
【図４】多層配線構造の一例を示す略断面図である。FIG. 4 is a schematic sectional view showing an example of a multilayer wiring structure.
１０ 処理室 １２ 熱板 １４ ヒータ １６ オゾン導入室 ２０ オゾン発生器 ２２ ガス流量調整器 ３２ 温度制御装置 DESCRIPTION OF SYMBOLS 10 Processing chamber 12 Heat plate 14 Heater 16 Ozone introduction chamber 20 Ozone generator 22 Gas flow controller 32 Temperature controller
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平５−304219（ＪＰ，Ａ) 特開 平５−121406（ＪＰ，Ａ) 特開 平２−233531（ＪＰ，Ａ) 特開 昭64−73729（ＪＰ，Ａ) 特開 平２−237030（ＪＰ，Ａ) 特開 昭64−32638（ＪＰ，Ａ) 特開 平１−306569（ＪＰ，Ａ) 特開 平５−222538（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/316 H01L 21/312 H01L 21/31 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-5-304219 (JP, A) JP-A-5-121406 (JP, A) JP-A-2-23331 (JP, A) JP-A 64-64 73729 (JP, A) JP-A-2-237030 (JP, A) JP-A-64-32638 (JP, A) JP-A-1-306569 (JP, A) JP-A 5-222538 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) H01L 21/316 H01L 21/312 H01L 21/31
Claims (4)
Ｇ膜を形成する方法において、 所定の下地膜の上にＳＯＧを塗布する第１の工程と、 前記第１の工程の後に前記ＳＯＧ膜をアニールしてキュ
アする第２の工程と、 前記第２の工程の後に前記下地膜を露出させない程度に
前記ＳＯＧ膜をエッチバックして膜表面を平坦化する第
３の工程と、 前記第３の工程の後に、前記ＳＯＧ膜を所定温度に加熱
しながらオゾンの雰囲気に晒して、前記ＳＯＧ膜の膜表
面および膜内部から有機物を除去する第４の工程とを有
するＳＯＧ膜の形成方法。1. An SO film as an interlayer insulating film of a semiconductor device.
A method of forming a G film, a first step of applying SOG on a predetermined base film, a second step of annealing and curing the SOG film after the first step, and A third step of etching back the SOG film so as not to expose the base film after the step and flattening the film surface; and, after the third step, heating the SOG film at a predetermined temperature. It is exposed to an atmosphere of ozone while heating to the film table of the SOG film
And a fourth step of removing organic matter from the surface and the inside of the film .
Ｇ膜を形成する方法において、 所定の下地膜の上にＳＯＧを塗布する第１の工程と、 前記第１の工程の後に前記ＳＯＧ膜を第１の温度に加熱
して乾燥させる第２の工程と、 前記第２の工程の後に前記ＳＯＧ膜をアニールしてキュ
アする第３の工程と、 前記第３の工程の後に前記下地膜を露出させない程度に
前記ＳＯＧ膜をエッチバックして膜表面を平坦化する第
４の工程と、 前記第４の工程の後に、前記ＳＯＧ膜を前記第１の温度
よりも高い第２の温度に加熱しながらオゾンの雰囲気に
晒して、前記ＳＯＧ膜の膜表面および膜内部から有機物
を除去する第５の工程とを有するＳＯＧ膜の形成方法。2. An SO film as an interlayer insulating film of a semiconductor device.
In the method of forming a G film, a first step of applying SOG on a predetermined base film, and a second step of drying the SOG film by heating it to a first temperature after the first step A third step of annealing and curing the SOG film after the second step, and etching back the SOG film to such an extent that the underlying film is not exposed after the third step. A fourth step of planarizing the film surface by heating, and after the fourth step, exposing the SOG film to an atmosphere of ozone while heating the SOG film to a second temperature higher than the first temperature. A fifth step of removing organic substances from the film surface and the inside of the film .
雰囲気に晒して前記ＳＯＧ膜から有機物を除去する工程
を減圧下で行うことを特徴とする請求項１または２のい
ずれかに記載のＳＯＧ膜の形成方法。3. The SOG film according to claim 1, wherein the step of removing the organic matter from the SOG film by exposing the SOG film to an ozone atmosphere while heating the SOG film is performed under reduced pressure. Formation method.
有機物を除去するためのオゾン処理を行うオゾン処理装
置であって、 前記オゾン処理を行うために前記被処理基板を収容する
密閉可能な処理室と、 前記処理室内で前記被処理基板を載置して支持する載置
台と、 前記処理室内で前記被処理基板を加熱するためのヒータ
と、 前記被処理基板の表面が所定の温度に加熱されるように
前記ヒータの発熱を制御する温度制御手段と、 前記載置台の外側で周回方向に延在し、前記処理室の外
からオゾンを導入し、 導入したオゾンを前記周回方向において均一な流量で前
記載置台上の前記被処理基板の表面に供給するガス導入
室と、 前記ガス導入室にオゾンを所定の流量で供給するオゾン
供給部と、 前記処理室の前記載置台の真上の天井面に設けられたガ
ス排気口と、 前記ガス排気口より前記処理室内のガスを排気する排気
手段とを具備するオゾン処理装置。4. An ozone treatment apparatus for performing an ozone treatment for removing an organic substance from an SOG film applied on a substrate to be processed, wherein the ozone treatment is performed by accommodating the substrate to be treated. A processing chamber; a mounting table for mounting and supporting the substrate to be processed in the processing chamber; a heater for heating the substrate to be processed in the processing chamber; and a surface of the substrate to be processed having a predetermined temperature. Temperature control means for controlling heat generation of the heater so as to be heated, and extending in a circumferential direction outside the mounting table, introducing ozone from outside the processing chamber, and uniformly introducing the introduced ozone in the circumferential direction. A gas introduction chamber for supplying a flow at a predetermined flow rate to the surface of the substrate to be processed on the mounting table, an ozone supply unit for supplying ozone to the gas introduction chamber at a predetermined flow rate, and directly above the mounting table for the processing chamber. Installed on the ceiling Ozone treatment apparatus comprising a gas outlet that is, an exhaust means for exhausting gas in the processing chamber from the gas outlet.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35021593A JP3225331B2 (en) | 1993-12-28 | 1993-12-28 | Method of forming SOG film and ozone treatment apparatus |
| US08/336,213 US5518542A (en) | 1993-11-05 | 1994-11-04 | Double-sided substrate cleaning apparatus |
| KR1019940028970A KR100307721B1 (en) | 1993-11-05 | 1994-11-05 | Double-sided board cleaning device and cleaning method using it |
| US08/597,536 US5686143A (en) | 1993-11-05 | 1996-02-02 | Resist treating method |
| US08/890,996 US5964954A (en) | 1993-11-05 | 1997-07-10 | Double-sided substrate cleaning apparatus and cleaning method using the same |
| KR1019990054437A KR100320585B1 (en) | 1993-11-05 | 1999-12-02 | A resist processing apparatus |
| KR1020000048569A KR100354547B1 (en) | 1993-11-05 | 2000-08-22 | Resist treating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35021593A JP3225331B2 (en) | 1993-12-28 | 1993-12-28 | Method of forming SOG film and ozone treatment apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07201843A JPH07201843A (en) | 1995-08-04 |
| JP3225331B2 true JP3225331B2 (en) | 2001-11-05 |
Family
ID=18409000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35021593A Expired - Fee Related JP3225331B2 (en) | 1993-11-05 | 1993-12-28 | Method of forming SOG film and ozone treatment apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3225331B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3500050B2 (en) | 1997-09-08 | 2004-02-23 | 東京エレクトロン株式会社 | Impurity removing device, film forming method and film forming system |
| KR100689346B1 (en) * | 1999-05-24 | 2007-03-08 | 동경 엘렉트론 주식회사 | Substrate processing apparatus |
| KR20010066610A (en) * | 1999-12-31 | 2001-07-11 | 황인길 | Ozone checking apparatus of wet processing apparatus |
| KR100479942B1 (en) * | 2002-06-28 | 2005-03-30 | 참이앤티 주식회사 | Apparatus for heating wafer |
| JP4538259B2 (en) * | 2003-04-23 | 2010-09-08 | 東京エレクトロン株式会社 | Interlayer insulating film surface modification method and surface modification apparatus |
-
1993
- 1993-12-28 JP JP35021593A patent/JP3225331B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07201843A (en) | 1995-08-04 |
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