JPH01216544A - Forming method for passivation film of semiconductor element - Google Patents
Forming method for passivation film of semiconductor elementInfo
- Publication number
- JPH01216544A JPH01216544A JP63043060A JP4306088A JPH01216544A JP H01216544 A JPH01216544 A JP H01216544A JP 63043060 A JP63043060 A JP 63043060A JP 4306088 A JP4306088 A JP 4306088A JP H01216544 A JPH01216544 A JP H01216544A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating layer
- solution
- substrate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 238000002161 passivation Methods 0.000 title claims abstract description 5
- 238000000034 method Methods 0.000 title claims description 9
- 150000004703 alkoxides Chemical class 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 230000001590 oxidative effect Effects 0.000 claims abstract 2
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000001476 alcoholic effect Effects 0.000 claims 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 10
- 239000011521 glass Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 abstract description 4
- 239000012298 atmosphere Substances 0.000 abstract description 3
- 239000012299 nitrogen atmosphere Substances 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229920001296 polysiloxane Polymers 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 14
- 239000000243 solution Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000012528 membrane Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000003921 oil Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- -1 silicon alkoxide Chemical class 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は半導体素子のパッジページ四ン膜に関し、特に
は電場発光する薄膜ＫＬ素子のパッジページ叢ン用シー
ルに関するものである。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a pad page membrane for semiconductor devices, and more particularly to a pad page membrane seal for electroluminescent thin film KL devices.
〈従来技術〉
第３図は従来の薄膜ＥＬ素子の基本的構造を示すもので
ある。ガラス基板ｌ上に透明電極２が帯状に配列され、
該透明電極２を含む基板ｌ上に下膜絶縁層３１発光層４
．及び上膜絶縁層５が順次積層される。該上膜絶縁層５
上には上記透明電極２と垂直な方向にＡ／電極６が配列
されて、基本的なＥＬ素子構造を成す。一般にＥＬ素子
は素子自体の吸湿性が高く、素子特性に悪影響を及ぼす
タメ、素子表面ニハフシベーシ叢ン用のシールが施され
る。同図の如く、該シールはＥＬ素子表面をガラス板９
・で覆い、該ガラス板９と素子との接着に熱硬化性樹脂
ｌＯを用い、前記ガラス板９と素子との隙間にオイル８
を封入することにより行なわれる。<Prior Art> FIG. 3 shows the basic structure of a conventional thin film EL element. Transparent electrodes 2 are arranged in a strip shape on a glass substrate l,
A lower insulating layer 31 and a light emitting layer 4 are disposed on the substrate l including the transparent electrode 2.
．． and upper film insulating layer 5 are sequentially laminated. The upper film insulating layer 5
A/electrodes 6 are arranged above in a direction perpendicular to the transparent electrode 2, forming a basic EL element structure. Generally, an EL element itself has a high hygroscopicity, and to prevent this from adversely affecting the characteristics of the element, a seal is applied to the surface of the element to prevent the formation of a thin basin. As shown in the figure, the seal covers the surface of the EL element with a glass plate 9.
A thermosetting resin 10 is used to bond the glass plate 9 and the element, and an oil 8 is used in the gap between the glass plate 9 and the element.
This is done by enclosing the
〈発明が解決しようとする課題〉 上記従来のパッジページ曹ン用のシール方式ハ。<Problem that the invention seeks to solve> The above-mentioned conventional sealing method for PADGE PAGE CAN.
非常に優れた防湿効果を示す反面、ガラス板のコストが
比較的高く、またオイル封入等のシール工程が非常に複
雑で生産性が低いといった問題がある。Although it exhibits an excellent moisture-proofing effect, there are problems in that the cost of the glass plate is relatively high, and the sealing process such as oil filling is extremely complicated, resulting in low productivity.
く課題を解決するための手段〉
本発明は上述する問題点を解決するためになされたもの
で、半導体素子表面にシリコン系アルコキシドのアルコ
ール溶液を塗布し、該塗布液を乾燥させた後、熱酸化し
てなる半導体素子のパッジページ１ン膜形成方法を提供
するものである。Means for Solving the Problems> The present invention has been made to solve the above-mentioned problems, and includes applying an alcohol solution of silicon-based alkoxide to the surface of a semiconductor element, drying the coating solution, and then applying heat to the surface of the semiconductor element. The present invention provides a method for forming a pad page film on a semiconductor device formed by oxidation.
く作用〉
上述の如く、パッシベーション膜材料トシテシリコン系
アルコキシドのアルコール溶液を用いると、溶液塗布、
乾燥、及び熱処理を施すだけでバッシペーシッン膜の形
成が可能になるため、パッジベージロン膜製造工程がよ
り簡単になり、またコストの低減化が可能となる。As mentioned above, when using an alcohol solution of silicon alkoxide as a passivation film material, solution coating,
Since it is possible to form a Bassipace membrane by simply performing drying and heat treatment, the process for manufacturing the Bassipaceron membrane becomes simpler and costs can be reduced.
〈実施例〉
以下、本発明の実施例を図面を用いて詳述するが、本発
明はこれに限定されるものではない。<Example> Hereinafter, an example of the present invention will be described in detail using the drawings, but the present invention is not limited thereto.
第１図は本発明の一実施例を説明するためのＥＬ素子要
部断面図である。同図の如く、ガラス基板ｌ上に透明電
極２が帯状に配列され、該透明電極２を含む基板ｌ上に
下膜絶縁層３１発光層４．及び上膜絶縁層５が順次積層
される。該上膜絶縁層５上には上記透明電極２と垂直な
方向にＡｌｆｉ極６が配列されて基本的なＥＬ素子構造
をなす。次に該ＥＬ素子のガラス基板１上にシリコン系
アルコキシドであるテトラエトキシシラン（Ｓｉ（ＯＣ
２Ｈ５）４）溶液を適量のエタノールに溶解して粘度を
調節したゾル状溶液を相対湿度２０％、温度２０℃、窒
素雰囲気中で塗布し、１００℃、真空下で１０分間乾燥
させた後、６００℃酸素雰囲気下で１０分間熱処理を行
うと、素子をシールするパッジベージ１ン用５ｉ０２膜
７が形成きれる。FIG. 1 is a sectional view of a main part of an EL element for explaining one embodiment of the present invention. As shown in the figure, transparent electrodes 2 are arranged in a band shape on a glass substrate l, and a lower insulating layer 31, a light emitting layer 4. and upper film insulating layer 5 are sequentially laminated. Alfi electrodes 6 are arranged on the upper insulating layer 5 in a direction perpendicular to the transparent electrode 2 to form a basic EL element structure. Next, tetraethoxysilane (Si(OC), which is a silicon-based alkoxide, is placed on the glass substrate 1 of the EL element.
2H5) 4) A sol-like solution prepared by dissolving the solution in an appropriate amount of ethanol and adjusting the viscosity was applied in a nitrogen atmosphere at a relative humidity of 20% and a temperature of 20°C, and after drying at 100°C for 10 minutes under vacuum, When heat treatment is performed for 10 minutes at 600° C. in an oxygen atmosphere, a 5i02 film 7 for padding page 1 for sealing the device is completely formed.
上記本実施例においてゾル状溶液塗布条件、乾燥条件、
及び熱処理条件を記載したが、本発明はこれに限定され
るものではなく、形成される５ｉ０２膜にき裂が入った
り、バッジページ揮ン膜トシての防湿効果が劣悪になる
のでなければ何れの条件下でもよく、乾燥工程は窒素雰
囲気下、或いは空気中であっても、また加熱させなくて
もよい。In this example, the sol solution application conditions, drying conditions,
Although the present invention is not limited to these, any method may be used as long as the formed 5i02 film does not crack or the moisture-proofing effect of the badge page volatile film becomes poor. The drying step may be carried out under a nitrogen atmosphere or in the air, or without heating.
ここで、本発明の実施例における防湿効果を確認するた
めにＥＬ素子の高温高湿動作試験を実施した。該試験は
先ずＥＬ素子に高電圧をかけて破壊点を作り、次いで高
温、高湿中で素子を駆動させ、剥離点の大きさの経時変
化を調べるものである。一般に剥離はＥＬ素子の欠陥、
或いは動作中に生じた破壊点等から水分が浸入すること
により生じる。よって、剥離点の拡大速度を調べること
により水分浸入の程度がわかり、パッシベーシーン膜の
防湿効果の有無を検討することができる。Here, a high-temperature, high-humidity operation test of the EL element was conducted in order to confirm the moisture-proofing effect in the example of the present invention. In this test, a high voltage is first applied to the EL element to create a breaking point, and then the element is driven in high temperature and high humidity to examine changes over time in the size of the peeling point. Generally, peeling is caused by a defect in the EL element.
Alternatively, it may occur due to moisture infiltrating from breakage points etc. that occur during operation. Therefore, by examining the rate of expansion of the peeling point, the degree of moisture infiltration can be determined, and the presence or absence of the moisture-proofing effect of the Passive Basene film can be examined.
本試験ではＥＬ素子に２０〜３０μｍの破壊点を形成し
、そのＥＬ素子？：６５℃、９５％ＲＨ雰囲気下に載置
して通常の電圧で駆動し、剥離点の大きさの変化を動作
時間に対して調査した。In this test, a breaking point of 20 to 30 μm was formed on the EL element, and the EL element was : It was placed in an atmosphere of 65° C. and 95% RH and driven at a normal voltage, and changes in the size of the peeling point were investigated with respect to operating time.
第２図は本試験の結果を示すグラフであり、横軸は高温
、高湿中での動作時間、縦軸は初期破壊点の大きさに対
する剥離点の大きさの比である。FIG. 2 is a graph showing the results of this test, where the horizontal axis is the operating time at high temperature and high humidity, and the vertical axis is the ratio of the size of the peeling point to the size of the initial failure point.
この時試料として、上記本実施例の如くアルコキシドと
してテトラエトキシシランを用いたＥＬ素子（図中Ａ）
、アルコキシドとしてテトラエトキシシランとポロント
リイソプロポキシ）？１ｌｌ（ＯＨ（ＣＩ（Ｂｉ）との
混合溶液を用い、上記本実施例と同じ工程でパッシペー
シッン膜として８２０３−８ｉ０２膜を形成したＥＬ素
子（図中Ｂ）、従来例の如くガタス板でシールされたＥ
Ｌ素子（図中Ｃ）、及びパッジページ漬ン膜を全く形成
しなかったＥＬ素子（図中Ｄ）を用いるものである。同
図から明らかなように、本発明の実施例によるＥＬ素子
は従来のＥＬ素子に比べて簡単な工程で安価にパッジペ
ージ１ン膜を形成したにもかかわらず、パッジページラ
ン膜として必要な防湿効果を充分有するものであること
がわかる。At this time, as a sample, an EL element (A in the figure) using tetraethoxysilane as the alkoxide as in this example above was used.
, tetraethoxysilane and porontriisopropoxy as alkoxides)? An EL element (B in the figure) in which an 8203-8i02 film was formed as a passive film in the same process as in this example described above using a mixed solution of 1 liter (OH (CI (Bi)), was sealed with a gutters plate as in the conventional example. E
An L element (C in the figure) and an EL element (D in the figure) on which no padding film was formed were used. As is clear from the figure, although the EL device according to the embodiment of the present invention formed the PAD PAGE 1 film in a simpler process and at a lower cost than the conventional EL device, It can be seen that it has a sufficient moisture-proofing effect.
上記本実施例において、絶縁層−発光層−絶縁層の三層
構造のＥＬ素子に適用した例について説明し友が、本発
明はこれに限定されるものではなく、絶縁層−発光層又
は発光層−絶縁層の二層構造のＥＬ素子、或いは発光層
だけのＥＬ素子、その他の半導体素子に適用可能である
ことはいうまでもない。In the above embodiment, an example in which the present invention is applied to an EL element having a three-layer structure of an insulating layer, a light emitting layer, and a light emitting layer will be described. It goes without saying that the present invention is applicable to an EL device having a two-layer structure of a layer and an insulating layer, an EL device having only a light emitting layer, and other semiconductor devices.
また、上記本実施例におｈてアルコキシドとしてテトラ
エトキシシランを用い、アルコール溶液てエタノールを
用いたが、本発明はこれに限定されるものではなく、同
様の効果が得られるならば他のアルコキシド、他のアル
コールを用いてもよい０
〈発明の効果〉
本発明により、従来に比べて製造工程が簡単で、コスト
の安いバッシベーシッン膜を形成することが可能になり
、ＥＬ素子等半導体素子の生産性が著しく向上するもの
である。In addition, although tetraethoxysilane was used as the alkoxide and ethanol was used as the alcohol solution in Example h above, the present invention is not limited to this, and other alkoxides may be used if the same effect can be obtained. , other alcohols may be used. <Effects of the Invention> The present invention makes it possible to form a bassibasin film with a simpler manufacturing process and lower cost than in the past, thereby improving the production of semiconductor devices such as EL devices. This significantly improves performance.
Ｋ１図は本発明の一実施例を示すＥＬ素子断面図、第２
図は本発明の実施例と従来例との特性比較図、第３図は
従来例を示すＥＬ素子断面図である。Figure K1 is a cross-sectional view of an EL element showing one embodiment of the present invention.
The figure is a characteristic comparison diagram between an embodiment of the present invention and a conventional example, and FIG. 3 is a cross-sectional view of an EL element showing the conventional example.
Claims (1)
ール溶液を塗布し、該塗布液を乾燥させた後、熱酸化し
てなることを特徴とする半導体素子のパッシベーション
膜形成方法。1. A method for forming a passivation film for a semiconductor device, which comprises applying an alcoholic solution of silicon-based alkoxide to the surface of the semiconductor device, drying the coating solution, and then thermally oxidizing it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63043060A JPH01216544A (en) | 1988-02-24 | 1988-02-24 | Forming method for passivation film of semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63043060A JPH01216544A (en) | 1988-02-24 | 1988-02-24 | Forming method for passivation film of semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01216544A true JPH01216544A (en) | 1989-08-30 |
Family
ID=12653326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63043060A Pending JPH01216544A (en) | 1988-02-24 | 1988-02-24 | Forming method for passivation film of semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01216544A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100447499B1 (en) * | 2002-05-07 | 2004-09-07 | 주식회사 엘리아테크 | Organic electro luminescence display and method for manufacturing the same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4996673A (en) * | 1973-01-16 | 1974-09-12 | ||
| JPS5693333A (en) * | 1979-11-02 | 1981-07-28 | Licentia Gmbh | Method of manufacturing insulating layer for covering one side surface of semiconductor |
| JPS62166529A (en) * | 1986-01-20 | 1987-07-23 | Nec Corp | Formation of thin film |
| JPS63289939A (en) * | 1987-05-22 | 1988-11-28 | Tokyo Ohka Kogyo Co Ltd | Method for qualitative improvement on silica coating |
| JPS6432638A (en) * | 1987-07-29 | 1989-02-02 | Hitachi Ltd | Manufacture of silica glass |
-
1988
- 1988-02-24 JP JP63043060A patent/JPH01216544A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4996673A (en) * | 1973-01-16 | 1974-09-12 | ||
| JPS5693333A (en) * | 1979-11-02 | 1981-07-28 | Licentia Gmbh | Method of manufacturing insulating layer for covering one side surface of semiconductor |
| JPS62166529A (en) * | 1986-01-20 | 1987-07-23 | Nec Corp | Formation of thin film |
| JPS63289939A (en) * | 1987-05-22 | 1988-11-28 | Tokyo Ohka Kogyo Co Ltd | Method for qualitative improvement on silica coating |
| JPS6432638A (en) * | 1987-07-29 | 1989-02-02 | Hitachi Ltd | Manufacture of silica glass |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100447499B1 (en) * | 2002-05-07 | 2004-09-07 | 주식회사 엘리아테크 | Organic electro luminescence display and method for manufacturing the same |
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