JPH0480760A - Illuminator - Google Patents

Abstract

PURPOSE:To reduce the uneveness in light irradiation to a wafer and to carry out short time processing by providing plural turnable louvers on the whole area of a face to be irradiated with a lamp at a prescribed interval, between a material to be irradiated and the lamp. CONSTITUTION:The louvers 6 are provided between the material to be irradiate 5 and the lamp 2. In other words, when the material to be irradiated 5 is put in or taken out, the louvers 6 are all closed, and interrupt the irradiation light from the lamp 2. Therefore, irradiation is carried out only when needed for the material 5, so that the pre-processing of the material 5 can be carried out, and the short time processing can be carried out, as a whole. On the other hand, the louvers 6 are rocked during the irradiation of the lamp 2. Thus, the optical path of the irradiation of the lamp 2 is always changed, uneveness in illumination on the lamp 2 itself are hardly reflected on the material 5, and uniform irradiation can be carried out on the whole surface of the material 5.

Description

[Detailed Description of the Invention] [Summary] Regarding an irradiation device that irradiates light onto a wafer in the manufacturing process of semiconductor devices, the present invention aims to reduce non-uniformity of light irradiation onto the wafer and achieve short processing time. In an irradiation device equipped with a lamp that irradiates an object to be irradiated with light of a predetermined wavelength, a plurality of rotatable roots 1 are provided between the object to be irradiated and the lamp in a predetermined manner over the entire irradiation surface of the lamp. The louvers are configured to be spaced apart, and the louvers are configured to swing during irradiation with the lamp.

[Industrial application field]

The present invention relates to an irradiation device that irradiates a wafer with light in a semiconductor device manufacturing process.

In recent years, in the manufacturing process of semiconductor devices, when etching is performed after resist coating on wafer λ, dry etching using plasma or the like has been used.

In this case, in order to improve the plasma resistance of the resist, the wafer is irradiated with ultraviolet rays before the etching process, and uniform and short-time processing is required.

[Conventional technology]

Irradiating the wafer with ultraviolet light before etching the wafer hardens the resist applied to the wafer, making it difficult to cause phenomena such as resist burning even when exposed to plasma or the like.

Conventionally, when irradiating a wafer with ultraviolet light, a low-pressure mercury lamp that emits ultraviolet light is used to irradiate the wafer in a vacuum with ultraviolet light. Generally, the illumination intensity of the mercury lamp itself is about 2
Since the amount of UV radiation was around 0%, UV rays were irradiated for a certain length of time to compensate for the insufficient irradiation. Furthermore, when irradiating a wafer with such ultraviolet rays, it is known to heat the wafer in advance in order to accelerate hardening of the resist.

On the other hand, due to the nature of mercury lamps used for ultraviolet irradiation, repeated turning on and off shortens the life of the lamp, so it is common to leave them on all the time.

[Invention or problem to be solved]

However, due to the characteristics of the lamp, it is not possible to uniformly irradiate the entire surface of the wafer with ultraviolet rays, and the wafer is irradiated with ultraviolet rays at times other than the predetermined processing time. Further, since the lamp is always on, the wafer is exposed to ultraviolet light from the moment it is transported into the processing chamber, and there is a problem in that the only way to irradiate the wafer with ultraviolet light is after heating the wafer.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to provide an irradiation device that reduces the non-uniformity of light irradiation onto a wafer and achieves short processing time.

[Failure to solve the problem]

FIG. 1 shows a diagram explaining the principle of the present invention. In the irradiation device 1 shown in FIG. 1, a lamp 2 in an illumination section 2a irradiates light of a predetermined wavelength onto an irradiated object 5 placed on a stage 4 in a processing section 3. Between the object to be irradiated 5 and the lamp 2, a plurality of rotatable loops are provided over the entire irradiation surface of the lamp 2 at predetermined intervals.

Moreover, this louver 6 swings during irradiation with the lamp 2.

[Effect]

As shown in FIG. 1, the louver 6 is connected to the irradiated object 5 and the lamp 2.
established between. That is, when the object 5 to be irradiated is taken out or put in, the louver 6 is fully closed to block the irradiation light from the lamp 2. This makes it possible to pre-process the irradiation object 5 by irradiating the irradiation object 5 only when necessary, and it becomes possible to perform the treatment in a short time as a whole.

Further, the louver 6 swings during irradiation with the lamp 2. As a result, the optical path irradiated from the lamp 2 constantly changes, and uneven illuminance of the lamp 2 itself is less likely to be reflected on the object 5 to be irradiated, making it possible to uniformly irradiate the entire surface of the object 5 to be irradiated.

〔Example〕

FIG. 2 shows a configuration diagram of an embodiment of the present invention.

The lighting device 1 shown in FIG. 2 is used in the manufacturing process of semiconductor devices.

In FIG. 2, a lamp 2 is provided within the lighting section 2a, and a plurality of louvers 6 are provided directly below the lamp 2.

Lamp 2 is a low pressure mercury lamp that emits ultraviolet light.

Further, the louvers 6 are rotatable and are provided at predetermined intervals over the entire irradiation surface of the lamp 2.

On the other hand, a processing chamber 10 is formed within the processing section 3 located below the illumination section 2a. A stage 4 is provided in the processing chamber 10, and a wafer 5, which is an object to be irradiated, is placed on the stage 4.
Or it will be placed. Note that the stage 4 also serves as a heating element that heats the wafer 5.

Further, the processing chamber 10 is sealed with a transparent glass 2 with an O-ring 11 interposed therebetween.

Here, the processing section 3 is connected to an exhaust system for bringing the processing chamber IO into a vacuum state and a supply system for supplying gas.

The wafer 5 processed by such an irradiation device is one that has been coated with a resist but before etching with plasma. First, the lamp 2 is lit or the roof is fully closed. At this time, the wafer 5 is transported into the processing section 3 and placed on the stage 4. Then, it is heated to about 150°C by the stage 4, and after heating, nitrogen gas (N2) or inert gas is supplied into the processing chamber 10 from the supply system, and a vacuum is maintained by the pressure regulating valve etc. by the exhaust system. The pressure is then reduced to, for example, about 10 Torr.

Thereafter, the loop halo is fully opened, and the resist on the wafer 5 is irradiated with ultraviolet light from the lamp 6. At this time, the louver 6 swings as shown by the arrow at a rate of, for example, ±56/sec. This swinging of the louver 6 causes the optical path of the ultraviolet rays to constantly change on the wafer 5, reducing uneven irradiation of the lamp 2 itself. That is, the resist on the wafer 5 uniformly irradiated with ultraviolet light is more firmly cured by heating and N2 gas. Therefore, when a plasma etching process is performed later, the plasma resistance is improved without causing burnt or the like.

In this way, before the ultraviolet treatment of the wafer 5, heating can be carried out with the wafer 5 fully open, and after the treatment, unnecessary ultraviolet irradiation can be eliminated, thereby shortening the overall treatment time. Furthermore, since the lu-halo is oscillated during ultraviolet irradiation, uniform ultraviolet treatment can be performed.

In the above embodiments, the case before etching treatment was described, but the present invention is not limited to this, and can be applied to any case where ultraviolet treatment is performed.

〔Effect of the invention〕

As described above, according to the present invention, a rotatable louver is provided between the irradiated object and the lamp, and by swinging this louver, uneven irradiation of the lamp itself is reduced and uniform irradiation is achieved. Ultraviolet treatment can be performed, and the overall treatment time can be shortened.

[Brief explanation of drawings]

FIG. 1 is a diagram explaining the principle of the present invention, FIG. 2 is a block diagram of an embodiment of the present invention. In the figure, l is the irradiation device, 2 is a lamp, 2a is a lighting section; 3 is a processing section, 4 is the stage, 5 is the irradiated object (wafer) 6 is louver shows.

Claims (2)

[Claims] (1) In an irradiation device equipped with a lamp (2) that irradiates an object (5) with light of a predetermined wavelength, a rotatable plurality of rotatable lamps are provided between the object (5) and the lamp (2). An irradiation device characterized in that several louvers (6) are provided at predetermined intervals over the entire irradiation surface of the lamp (2). (2) The irradiation device according to claim 1, wherein the louver (6) swings during irradiation with the lamp (2).