JPS5710241A - Manufacturing apparatus of semiconductor - Google Patents

Manufacturing apparatus of semiconductor

Info

Publication number
JPS5710241A
JPS5710241A JP8481380A JP8481380A JPS5710241A JP S5710241 A JPS5710241 A JP S5710241A JP 8481380 A JP8481380 A JP 8481380A JP 8481380 A JP8481380 A JP 8481380A JP S5710241 A JPS5710241 A JP S5710241A
Authority
JP
Japan
Prior art keywords
container
pressure
wafers
substrates
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8481380A
Other languages
Japanese (ja)
Inventor
Kazuo Ito
Hiroji Harada
Kazuo Mizuguchi
Masahiko Denda
Shigeji Kinoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8481380A priority Critical patent/JPS5710241A/en
Publication of JPS5710241A publication Critical patent/JPS5710241A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To prevent contamination from a heat source and a container, e.g., in a high pressure oxidizing process, by applying heat resistant coating on the inner wall of the pressure resistant container which encloses substrates, and heat-processing the substrate by a lamp hermetically sealed in a container. CONSTITUTION:A thermally oxidized film is formed on, e.g., Si substrates 10 at a high temperature and high pressure in the apparatus 1. On the wall of the pressure resistant container comprising a metallic chamber 2 and a lid 3, an SiO2 film obtained by oxidizing an NoSi2 sputtered film is formed, and the coating 20 is provided. The wafers 10 which are held by a boat 9 are placed on a table 8 in said container, and H2 and O2 are introduced from nozzles 6 and 7. Then wafers 10 are heated and oxidized by the lamp 4 hermetically sealed in the quartz tube 5. On this constitution, the introduction of contaminants at the high-temperature and high- pressure process can be prevented. This apparatus is suitable for processes such as nitridation, diffusion, and the like, in addn. to the oxidation.
JP8481380A 1980-06-20 1980-06-20 Manufacturing apparatus of semiconductor Pending JPS5710241A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8481380A JPS5710241A (en) 1980-06-20 1980-06-20 Manufacturing apparatus of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8481380A JPS5710241A (en) 1980-06-20 1980-06-20 Manufacturing apparatus of semiconductor

Publications (1)

Publication Number Publication Date
JPS5710241A true JPS5710241A (en) 1982-01-19

Family

ID=13841164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8481380A Pending JPS5710241A (en) 1980-06-20 1980-06-20 Manufacturing apparatus of semiconductor

Country Status (1)

Country Link
JP (1) JPS5710241A (en)

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