JPH0778779A - Radiation heat preventing plate and use thereof - Google Patents

Radiation heat preventing plate and use thereof

Info

Publication number
JPH0778779A
JPH0778779A JP22150393A JP22150393A JPH0778779A JP H0778779 A JPH0778779 A JP H0778779A JP 22150393 A JP22150393 A JP 22150393A JP 22150393 A JP22150393 A JP 22150393A JP H0778779 A JPH0778779 A JP H0778779A
Authority
JP
Japan
Prior art keywords
temperature
radiant heat
substrate
plate
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22150393A
Other languages
Japanese (ja)
Inventor
Takao Sakai
隆夫 坂井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP22150393A priority Critical patent/JPH0778779A/en
Publication of JPH0778779A publication Critical patent/JPH0778779A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To provide a radiation heat preventing plate which is so formed in structure as to meet requirements with a less number of sheets and the use thereof, wherein the radiation heat preventing plate is used in a, vacuum processing device possessed of an inner space composed of temperature regions continuously arranged in one direction and provided between the adjacent temperature regions so as to keep a low-tempreature region at a constant temperature throughout it preventing radiant heat from being transmitted from a high- temperature region to a low-temperature region arranged adjacent to each other. CONSTITUTION:A radiant heat preventing plate has such a structure that one side or both sides of a metal plate 103 or a metal foil or metal film (hereinafter referred to as metal) is coated with inorganic thermal insulating material. Single crystal Al2O3 101 which can be mirror-finished and bonded to metal by pressure or quartz which can be used as melt coating. The radiant heat preventing plate is used in such a manner that the plates are provided between adjacent temperature regions and increased in number by one for every temperature difference of 25 deg.C between the adjacent regions.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、内部空間が高温に保
持された容器内へ薄膜原料ガスを減圧状態に導入して容
器内の基板表面に薄膜を形成する減圧CVD装置、ある
いは酸化用ガスを減圧状態に導入して基板母体内へ滲透
させ基板全体を酸化する酸化拡散装置等の減圧処理装置
のうち、特に、内部空間が1方向に連続して隣り合う複
数の温度領域からなる容器内で温度が最高の温度領域以
外の温度領域内に被処理基板を配するとともに処理用ガ
スを該内部空間内へ減圧状態に導入して基板を処理する
減圧処理装置により、基板を処理する際に被処理基板
の,その属する温度領域に隣接するより高温度の温度領
域側に配され基板への該高温度温度領域からの輻射熱を
防止して基板をその属する温度領域の温度に保持しよう
とする輻射熱防止板に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low pressure CVD apparatus for introducing a thin film material gas into a container whose internal space is kept at a high temperature in a reduced pressure state to form a thin film on a substrate surface in the container, or an oxidizing gas. In a decompression treatment device such as an oxidation diffusion device that introduces a reduced pressure state to permeate into the substrate mother body and oxidize the entire substrate, particularly in a container in which the internal space is formed of a plurality of temperature regions that are continuously adjacent in one direction. When the substrate is processed by a decompression processing device that arranges the substrate to be processed in a temperature region other than the highest temperature region and introduces the processing gas into the internal space under reduced pressure to process the substrate. The substrate to be processed is arranged on the side of a higher temperature temperature region adjacent to the temperature region to which it belongs, and radiant heat from the high temperature temperature region to the substrate is prevented so as to keep the substrate at the temperature of the temperature region to which it belongs. Radiant heat prevention plate About.

【0002】[0002]

【従来の技術】従来、減圧下で被処理基板を処理する減
圧CVD装置あるいは酸化拡散装置として、一般に図3
の構成のものが知られている。この装置は、ニクロム線
等の発熱体を用いて円筒状に構成したヒータ1と、ヒー
タ1により囲まれた,石英からなる,上端面がドーム状
の蓋板で覆われた円筒状の外部反応管2と、外部反応管
2と同軸に配された,石英からなる内部反応管3と、処
理ガス導入管4とを主要構成要素とした1段炉方式の装
置として構成されている。
2. Description of the Related Art Conventionally, as a low pressure CVD apparatus or an oxidation diffusion apparatus for processing a substrate to be processed under reduced pressure, generally, FIG.
The thing of the composition of is known. This apparatus is composed of a heater 1 which is formed in a cylindrical shape by using a heating element such as a nichrome wire, and a cylindrical external reaction which is surrounded by the heater 1 and which is made of quartz and whose upper end surface is covered with a dome-shaped lid plate. It is configured as a one-stage furnace type apparatus having a tube 2, an internal reaction tube 3 made of quartz, which is arranged coaxially with the external reaction tube 2, and a processing gas introduction tube 4, as main components.

【0003】この装置を用いて被処理基板上に例えばS
iO2 膜を形成する際には、被処理基板を適当な間隔を
保って積層状態に段積みにしたボート5を内部反応管3
内へ挿入するとともにボート5の下方に、装置内部の熱
が下方へ逃げるのを防止するためのSiC板が段積み状
態に挿入され、内部反応管3の下端面がベースフランジ
6で閉鎖された後、ヒータ1に加熱電流が供給され、炉
内の温度が所定温度まで上昇したところで処理ガス導入
管4から処理用ガスとして例えばN2 ガスバブリングに
より気相状態としたTEOS(Tetra Ethyl Ortho Sili
cate, SiO2膜成分を含む液体有機材料) が内部反応
管3の内側へ導入され、基板上にSiO 2 膜を形成した
後、内部反応管3と外部反応管2との間の円筒状空間を
通って外部へ排出される。
By using this apparatus, for example, S
iO2When forming a film, set the substrate to be processed at an appropriate interval.
The boats 5 which are kept and stacked in a stacked state
The heat inside the device is inserted into the bottom of the boat 5 as well as inside.
Stack of SiC plates to prevent the metal from escaping downward
The inner reaction tube 3 and the lower end surface of the inner reaction tube 3 is a base flange.
After being closed at 6, heating current is supplied to the heater 1,
When the internal temperature rises to the specified temperature, process gas is introduced
As a processing gas from the pipe 4, for example, N2For gas bubbling
TEOS (Tetra Ethyl Ortho Sili) in a more vapor state
cate, SiO2Internal reaction of liquid organic material including membrane components)
Introduced inside the tube 3 and on the substrate SiO 2Formed a film
After that, the cylindrical space between the inner reaction tube 3 and the outer reaction tube 2 is opened.
It passes through and is discharged to the outside.

【0004】このように構成される1段炉方式の装置で
は、成膜後のアニール処理のために炉内の温度を変える
必要があり、ヒータ1のタップ切換え後、炉内の温度が
アニール処理に適した温度に到達するのに時間がかか
り、装置として生産性に問題があった。このために、図
2に示すような、2段炉方式の装置の開発が進められて
いる。なお図3には、従来一般の減圧処理装置として、
反応管を鉛直方向とした縦型のものを示したが、反応管
を水平方向とした横型のものも多用されている。
In the one-stage furnace type apparatus configured as described above, it is necessary to change the temperature in the furnace for the annealing treatment after film formation. After the taps of the heater 1 are switched, the temperature in the furnace is changed to the annealing treatment. It took a long time to reach a temperature suitable for, and there was a problem in productivity as an apparatus. For this reason, development of a two-stage furnace type apparatus as shown in FIG. 2 is under way. In addition, in FIG. 3, as a conventional general decompression processing apparatus,
The vertical type reaction tube is shown, but the horizontal type reaction tube is often used.

【0005】図2は2段炉方式の装置構成の一例を示す
ものであり、被処理基板が積層状態に段積みされたボー
ト7を挿入する反応管8は軸方向に長く作られ、ヒータ
も軸方向にアニール用,成膜あるいは酸化拡散用(以下
処理用と記す)と2段構成としている。図の装置では、
アニール用ヒータである第1ヒータ10は反応管8の奥
側に、また処理用ヒータである第2ヒータ11は反応管
8のボート挿入口側に配され、反応管8の内部空間が、
反応管奥側の高温領域と、反応管のボート挿入口側の低
温領域とからなっている。なお、反応管8は、奥側の高
温領域を石英製の第1防塵室12で囲まれ、ボート挿入
口側の低温領域を石英製の第2防塵室13で囲まれ、反
応管8の外周面へのごみの付着を防止して各温度領域へ
の輻射熱の入射率低下を防止するようにしている。そし
て、さらに、第1防塵室12と第2防塵室13との間に
は熱反射板14が反応管8を囲んでリング状に設けら
れ、両温度領域を熱的に隔離して、基板処理時に全基板
を低温の均熱領域内で処理できるようにしている。な
お、石英管8内に挿入されるボート7の反応管ボート挿
入口側には、SiC板を用いて構成した遮熱機構9が挿
入され、挿入後、反応管8の内部空間はベースフランジ
15を用いて閉鎖される。閉鎖後、処理ガスが、反応管
8のボート挿入口側に設けた図示されない処理ガス導入
口から導入され、反応管8奥側の排気管8aを通って外
部へ排出される。なお、図中の符号16は制御用熱電
対、17は測温用熱電対である。
FIG. 2 shows an example of a two-stage furnace type apparatus configuration. A reaction tube 8 for inserting a boat 7 in which substrates to be processed are stacked in a stacked state is made long in the axial direction, and a heater is also provided. It has a two-stage structure for annealing, film formation or oxidation diffusion (hereinafter referred to as processing) in the axial direction. In the device shown,
The first heater 10 that is an annealing heater is arranged on the inner side of the reaction tube 8, and the second heater 11 that is a processing heater is arranged on the boat insertion port side of the reaction tube 8, and the inner space of the reaction tube 8 is
It consists of a high temperature region on the inner side of the reaction tube and a low temperature region on the boat insertion port side of the reaction tube. The reaction tube 8 is surrounded by a first dust-proof chamber 12 made of quartz in a high temperature region on the back side, and a second dust-proof chamber 13 made of quartz in a low temperature region on the boat insertion port side. The dust is prevented from adhering to the surface and the incidence rate of radiant heat on each temperature region is prevented from decreasing. Further, a heat reflection plate 14 is provided between the first dustproof chamber 12 and the second dustproof chamber 13 in a ring shape so as to surround the reaction tube 8 to thermally isolate both temperature regions and to process the substrate. Sometimes all substrates can be processed in a low temperature soaking zone. A heat shield mechanism 9 made of a SiC plate is inserted into the reaction tube boat insertion opening side of the boat 7 inserted into the quartz tube 8. After the insertion, the internal space of the reaction tube 8 has a base flange 15 To be closed. After closing, the processing gas is introduced from a processing gas introduction port (not shown) provided on the boat insertion port side of the reaction tube 8 and discharged to the outside through the exhaust pipe 8a on the inner side of the reaction tube 8. In the figure, reference numeral 16 is a control thermocouple and 17 is a temperature measuring thermocouple.

【0006】[0006]

【発明が解決しようとする課題】このように、減圧処理
装置を2段炉方式の構成とすれば、基板処理後、直ちに
ボートを反応管奥側の高温領域内へ上昇させてアニール
処理に入ることができ、装置の生産性向上が顕著となる
一方、高温領域からの輻射熱のために、両温度領域間に
熱反射板(14)が設けられているにもかかわらず、高
温領域側に位置する基板の温度が上昇し、成膜速度が基
板の段積み方向に不均一となってしまう。そこで、積層
状態に段積みされた被成膜基板の高温領域側にSiC板
を配して輻射熱による温度上昇を抑えようとしても、例
えば第1ヒータ10に800〜950℃で使用できるヒ
ータを使用し、第2ヒータ11に500〜700℃で使
用できるヒータを使用して、高温領域の温度を900
℃,低温領域の温度を700℃として、厚さ約3mmの
SiC板を5枚用いて成膜を行った場合、成膜速度不均
一の改善がなお不十分で±10%となり、1バッチ25
枚のうち数枚しかデバイスに適用できないという問題が
あった。
Thus, if the depressurization processing apparatus is of a two-stage furnace system, the boat is immediately raised to the high temperature region on the inner side of the reaction tube and the annealing process is started after the substrate processing. While it is possible to improve the productivity of the device remarkably, the radiant heat from the high temperature region causes the heat reflection plate (14) to be provided between the two temperature regions, so that it is located on the high temperature region side. As a result, the substrate temperature rises, and the film formation rate becomes non-uniform in the stacking direction of the substrates. Therefore, even if an SiC plate is arranged on the high temperature region side of the deposition target substrates stacked in a stacked state to suppress the temperature rise due to radiant heat, for example, a heater that can be used at 800 to 950 ° C. is used for the first heater 10. Then, a heater that can be used at 500 to 700 ° C. is used as the second heater 11, and the temperature in the high temperature range is set to 900.
When the film is formed using five SiC plates with a thickness of about 3 mm at a temperature of 700 ° C in the low temperature region of 700 ° C, the unevenness of the film formation rate is still insufficiently improved to ± 10%, and 25
There was a problem that only a few of them could be applied to the device.

【0007】本発明の目的は、内部空間が1方向に連続
して隣り合う複数の温度領域からなる容器内で温度が最
高の温度領域以外の温度領域内に被処理基板を配すると
ともに処理用ガスを該内部空間内へ減圧状態に導入して
基板を処理する減圧処理装置により基板を処理する際に
被処理基板の,その属する温度領域に隣接するより高温
度の温度領域側に配され基板への該高温度温度領域から
の輻射熱を防止して基板をその属する温度領域の温度に
保持することのできる輻射熱防止板の構造とその使用方
法を提供することである。
An object of the present invention is to arrange a substrate to be processed in a temperature region other than the temperature region where the temperature is the highest in a container having a plurality of temperature regions whose inner spaces are adjacent to each other continuously in one direction and for processing. When a substrate is processed by a decompression processing apparatus that introduces a gas into the internal space in a decompressed state to process the substrate, the substrate is arranged on the side of a higher temperature temperature region adjacent to the temperature region to which the substrate belongs. (EN) A structure of a radiant heat preventive plate capable of preventing radiant heat from the high temperature temperature region and holding the substrate at the temperature of the temperature region to which the substrate belongs, and a method of using the same.

【0008】[0008]

【課題を解決するための手段】上記課題を解決するため
に、本発明においては、輻射熱防止板を、金属板または
金属箔もしくは金属膜の一方の面もしくは両方の面を無
機質の熱絶縁材でコーティング状態に覆った構造に形成
する。ここで、無機質の熱絶縁材を単結晶Al2 3
すれば極めて好適である。
In order to solve the above-mentioned problems, in the present invention, the radiant heat preventive plate is a metal plate or a metal foil or a metal film, and one or both surfaces thereof are made of an inorganic heat insulating material. It is formed in a structure covered with a coating. Here, it is very suitable to use single crystal Al 2 O 3 as the inorganic heat insulating material.

【0009】あるいは、無機質の熱絶縁材を石英とする
のもよい。そして、上記構造の輻射熱防止板を、被処理
基板がその属する温度領域の温度を保持するように使用
する方法として、被処理基板が属する温度領域の温度
と、輻射熱防止板が配される側の高温度温度領域の温度
との差約25℃ごとに輻射熱防止板を1枚づつ増す方法
をとるものとする。
Alternatively, the inorganic heat insulating material may be quartz. Then, as a method of using the radiant heat preventive plate having the above structure so as to maintain the temperature of the temperature region to which the substrate to be processed belongs, the temperature of the temperature region to which the substrate to be processed belongs and the side on which the radiant heat preventive plate is arranged are It is assumed that the radiant heat preventive plate is increased by one for each difference of about 25 ° C. from the temperature in the high temperature temperature region.

【0010】[0010]

【作用】本発明は、鏡面を光の反射面としてもつ金属板
または金属箔もしくは金属膜が輻射熱防止板として最高
の輻射熱防止機能をもつことに着目したものである。し
かし、輻射熱防止板が配される炉内には処理ガスが導入
され、金属板または金属箔もしくは金属膜の表面を単に
鏡面としただけでは、金属と処理ガスとが反応するため
に鏡面状態を長期に保持することができない。そこで、
熱的に材質が変化せず、かつ処理ガスとも反応しない無
機質の熱絶縁材で鏡面に処理ガスが接触しないようにコ
ーティング状態に鏡面を覆うことにより、最高の輻射熱
防止機能を長期に保持することのできる輻射熱防止板を
得ることができる。この場合、無機質の熱絶縁材は透
明、非透明いずれのものであってもよい。
The present invention focuses on the fact that a metal plate or a metal foil or a metal film having a mirror surface as a light reflecting surface has the highest radiation heat preventing function as a radiation heat preventing plate. However, the processing gas is introduced into the furnace where the radiant heat prevention plate is arranged, and if the surface of the metal plate or the metal foil or the metal film is simply made to be a mirror surface, the metal and the processing gas react with each other so that a mirror surface state is obtained. Can not hold for a long time. Therefore,
The best radiant heat prevention function is maintained for a long period of time by covering the mirror surface in a coating state so that the processing gas does not come into contact with the mirror surface with an inorganic heat insulating material that does not change the material thermally and does not react with the processing gas. It is possible to obtain a radiant heat prevention plate that can be used. In this case, the inorganic heat insulating material may be transparent or non-transparent.

【0011】なお、鏡面を無機質の熱絶縁材で覆う際に
有機性の接着剤を用いる方法も考えられる。この場合に
は、金属表面の鏡面と無機質の熱絶縁材との間にはすき
間がなく、鏡面が無機質の熱絶縁材でコーティング状態
に覆われたことになるが、有機性の接着剤では高温使用
中の材質変化,高温雰囲気中への接着剤成分の拡散によ
る処理中基板への悪影響等の恐れがあり、鏡面状態の長
期保持,装置性能の維持両面から有機性接着剤の使用は
好ましくない。
A method of using an organic adhesive when the mirror surface is covered with an inorganic heat insulating material is also conceivable. In this case, there is no gap between the mirror surface of the metal surface and the inorganic heat insulating material, and the mirror surface is covered with the inorganic heat insulating material in a coating state. The use of organic adhesives is not preferable from the standpoints of long-term retention of mirror surface condition and maintenance of device performance, because there is a possibility that the material during use may change and the adhesive components may diffuse into the high temperature atmosphere, which may adversely affect the substrate during processing. .

【0012】そこで、金属板または金属箔もしくは金属
膜をコーティング状態に覆う無機質の熱絶縁材として,
本発明では単結晶Al2 3 (通称サファイヤ)に着目
をした。これは単結晶Al2 3 が表面を鏡面に仕上げ
ることが可能であるという特性を有し、これにより、表
面を鏡面とした金属板または金属箔もしくは金属膜と真
空内で圧接接合することが可能になるからである。真空
中での圧接接合は両鏡面間の分子間引力によるものであ
るから、接合面への処理ガスの接触は極めて困難であ
る。
Therefore, as an inorganic heat insulating material for covering the metal plate or the metal foil or the metal film in a coated state,
In the present invention, attention is paid to single crystal Al 2 O 3 (commonly called sapphire). This has the property that single crystal Al 2 O 3 can have a mirror-finished surface, which allows pressure-bonding in vacuum with a metal plate or metal foil or metal film having a mirror-finished surface. Because it will be possible. Since pressure bonding in vacuum is due to intermolecular attractive force between both mirror surfaces, it is extremely difficult to contact the processing gas with the bonding surface.

【0013】なお、輻射熱防止板は、取扱い面で、ボー
ト上部(ボートの高温領域側)への着脱を頻繁に行うも
のでは、剛性と靱性とを備えたものとすることが望まし
いので、単結晶Al2 3 で覆う金属は金属板とするの
が最も望ましい。また、無機質の熱絶縁材として石英を
用いても単結晶Al2 3 と同様の高性能の輻射熱防止
板を得ることができる。このときは石英を溶融し、真空
中で金属板または金属箔もしくは金属膜表面の鏡面をコ
ーティングする。この場合には、作業工程に熱作業を含
むので作業工程がやや複雑化するが、単結晶Al2 3
と比べて材料を入手しやすいメリットがある。
In terms of handling, the radiant heat prevention plate is preferably one having rigidity and toughness when it is frequently attached to and detached from the upper part of the boat (on the high temperature region side of the boat). The metal covered with Al 2 O 3 is most preferably a metal plate. Further, even if quartz is used as the inorganic heat insulating material, it is possible to obtain a high-performance radiant heat preventive plate similar to that of single crystal Al 2 O 3 . At this time, the quartz is melted and the mirror surface of the metal plate or metal foil or metal film surface is coated in vacuum. In this case, since the working process involves thermal work, the working process is slightly complicated, but single crystal Al 2 O 3
Compared with, there is an advantage that the material can be easily obtained.

【0014】上記構造の輻射熱防止板は、輻射熱防止機
能が非常に高く、図2における第1ヒータ10による高
温領域の温度を950℃,第2ヒータ11による低温領
域の温度を700℃とした場合、輻射熱防止板を使用し
ない場合には、被成膜基板の高温領域側の温度が約75
0℃となり、高温領域からの輻射熱が膜厚の基板段積み
方向均一性に悪影響を及ぼしたが、上記構造の輻射熱防
止板を1枚挿入すると温度が約725℃となり、2枚挿
入すると約700℃と、低温領域の温度とほぼ同一温度
となった。このことから、上記構造による輻射熱防止板
は、高温領域の温度と低温領域の温度との温度差約25
℃ごとに1枚づつ増して使用するようにすることによ
り、低温領域に属する被処理基板をすべて低温領域の温
度に保持して処理を行うことができる。
The radiant heat preventive plate having the above structure has a very high radiant heat preventive function. When the temperature of the high temperature region by the first heater 10 in FIG. 2 is 950 ° C. and the temperature of the low temperature region by the second heater 11 is 700 ° C. When the radiation heat prevention plate is not used, the temperature on the high temperature side of the film formation substrate is about 75.
The radiant heat from the high temperature region adversely affected the uniformity of the film thickness in the substrate stacking direction, but the temperature was about 725 ° C when one radiant heat preventive plate having the above structure was inserted, and about 700 when the two were inserted. The temperature was about the same as the temperature in the low temperature region. From this, the radiant heat preventive plate having the above structure has a temperature difference of about 25 degrees between the temperature in the high temperature region and the temperature in the low temperature region.
By increasing the number of substrates to be used one by one for each ° C, it is possible to perform processing while maintaining all the substrates to be processed belonging to the low temperature region at the temperature of the low temperature region.

【0015】[0015]

【実施例】図1に本発明による輻射熱防止板構造の一実
施例を示す。この輻射熱防止板は、直径6インチの被処
理基板を対象としたもので、円板状の単結晶Al2 3
(直径167mm,厚み0.5mm)101を2枚と、
リング状の単結晶Al2 3 (外径167mm,内径1
50mm,厚み0.5mm)102を1枚と、円板状の
タングステン(直径150mm,厚み0.5mm)10
3を1枚とを用い、真空中で図のように圧接接合したも
のである。この輻射熱防止板を、図2に示す構成の2段
炉方式の装置に用いて被処理基板にSiO2 膜を成膜す
る際の輻射熱防止板の輻射熱防止効果につき実験した。
反応管8内部の高温領域の温度を900℃,ボート7が
置かれる低温領域の温度700℃とし、被処理基板にS
iO2膜を成膜するための処理ガスには、N2 ガスバブ
リングにより気相化したTEOSを用い、これを100
〔SCCM〕の流量で反応管8内へ導入するとともに、
反応管8内の圧力が0.3〔Torr〕となるように排
気を行い、輻射熱防止板はボート7に搭載された被処理
基板群より高温領域側の位置100に2枚使用した。こ
の結果、成膜速度をボート内で揃えることができ、基板
間均一性を±5%以内にすることができた。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a radiant heat preventive plate structure according to the present invention.
An example is shown. This radiant heat prevention plate is a
It is intended for processing substrates and is a disk-shaped single crystal Al.2O3
2 sheets (diameter 167 mm, thickness 0.5 mm) 101,
Ring-shaped single crystal Al2O 3(Outer diameter 167 mm, inner diameter 1
50 mm, thickness 0.5 mm) 102 and one disc-shaped
Tungsten (diameter 150 mm, thickness 0.5 mm) 10
Using 3 and one, press-bonded in vacuum as shown
Of. This radiant heat prevention plate has a two-stage structure as shown in FIG.
Used for furnace type equipment2Deposit a film
Experiments were carried out on the radiant heat prevention effect of the radiant heat preventive plate at the time of heating.
The temperature of the high temperature region inside the reaction tube 8 is 900 ° C.
The temperature of the low temperature region to be placed is 700 ° C.
iO2The processing gas for forming the film is N 22Gas bab
Using TEOS vaporized by a ring, this is 100
Introduced into the reaction tube 8 at a flow rate of [SCCM],
Exhaust so that the pressure in the reaction tube 8 becomes 0.3 [Torr].
And the radiant heat prevention plate is mounted on the boat 7 to be treated.
Two sheets were used at a position 100 on the high temperature region side of the substrate group. This
As a result, the film formation speed can be made uniform in the boat, and the substrate
The uniformity was within ± 5%.

【0016】[0016]

【発明の効果】本発明においては、輻射熱防止板を以上
の構造に形成しかつ以上の方法で使用するようにしたの
で、以下に記載する効果が得られる。請求項1のもので
は、鏡面に仕上げられた金属表面が処理ガスと反応する
ことなく、初期の鏡面状態を長期間保持することがで
き、鏡面のもつ最高の輻射熱防止機能を永続させること
ができる。また、無機質の熱絶縁材でコーティング状態
に被覆するようにしたので、処理時に雰囲気ガスが汚染
させる恐れがなく、常に良好な処理結果を得ることがで
きる。
In the present invention, since the radiant heat preventive plate is formed in the above structure and used in the above method, the effects described below can be obtained. According to the first aspect of the present invention, the metal surface finished as a mirror surface does not react with the processing gas, the initial mirror surface state can be maintained for a long time, and the maximum radiant heat prevention function of the mirror surface can be made permanent. . Further, since the coating is carried out with the inorganic heat insulating material, there is no risk of the atmospheric gas being contaminated during the processing, and a good processing result can always be obtained.

【0017】請求項2の輻射熱防止板では、無機質の熱
絶縁材と金属との圧接接合が可能となり、これにより、
無機質の熱絶縁材で覆われる金属板として、請求項1に
よる輻射熱防止板構造の効果をもちかつ剛性と靱性とを
備えた取扱いの容易な輻射熱防止板を容易に得ることが
できる。請求項3の輻射熱防止板では、入手容易な石英
を用いて請求項1,2と同一効果を持つ輻射熱防止板を
得ることができる。
According to the radiant heat preventive plate of the second aspect, it is possible to perform pressure contact bonding between the inorganic heat insulating material and the metal.
As the metal plate covered with the inorganic heat insulating material, it is possible to easily obtain the radiant heat preventive plate having the effect of the radiant heat preventive plate structure according to claim 1 and having rigidity and toughness and easy to handle. In the radiant heat preventive plate of the third aspect, it is possible to obtain the radiant heat preventive plate having the same effect as in the first and second aspects by using easily available quartz.

【0018】請求項4の方法では、本発明の構造による
輻射熱防止板の輻射熱防止効果が1枚当たり約25℃と
大きいために、輻射熱防止板の配置等、別の方法をとる
ことなく、この方法のみにより、少ない使用枚数で目的
とする輻射熱防止効果を得ることができる。
According to the method of claim 4, since the radiant heat prevention effect of the radiant heat preventive plate according to the structure of the present invention is as large as about 25 ° C. per sheet, the radiant heat preventive plate is arranged without any other method. Only by the method, the desired radiant heat prevention effect can be obtained with a small number of sheets used.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明による輻射熱防止板構造の一実施例を示
すものであって、同図(a)は横断面図、同図(b)は
平面図
1A and 1B show an embodiment of a radiant heat prevention plate structure according to the present invention, in which FIG. 1A is a cross-sectional view and FIG. 1B is a plan view.

【図2】本発明による輻射熱防止板設置の対象となる減
圧処理装置構成の一例を示す縦断面図
FIG. 2 is a vertical cross-sectional view showing an example of the configuration of a decompression processing apparatus to which a radiant heat prevention plate according to the present invention is installed.

【図3】図2に示す減圧処理装置開発の経緯を説明する
ための従来一般の減圧処理装置構成の一例を示す縦断面
FIG. 3 is a vertical cross-sectional view showing an example of the configuration of a conventional general decompression processing apparatus for explaining the history of development of the decompression processing apparatus shown in FIG.

【符号の説明】[Explanation of symbols]

1 ヒータ 2 外部反応管 3 内部反応管 4 処理ガス導入管 5 ボート 7 ボート 8 反応管 10 第1ヒータ 11 第2ヒータ 14 熱反射板 100 輻射熱防止板設置位置 101 単結晶Al2 3 板 102 単結晶Al2 3 リング 103 金属板1 Heater 2 External reaction tube 3 Internal reaction tube 4 Processing gas introduction tube 5 Boat 7 Boat 8 Reaction tube 10 First heater 11 Second heater 14 Heat reflection plate 100 Radiant heat prevention plate installation position 101 Single crystal Al 2 O 3 plate 102 Single Crystal Al 2 O 3 ring 103 Metal plate

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/205 21/31 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location H01L 21/205 21/31

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】内部空間が1方向に連続して隣り合う複数
の温度領域からなる容器内で温度が最高の温度領域以外
の温度領域内に被処理基板を配するとともに処理用ガス
を該内部空間内へ減圧状態に導入して基板を処理する減
圧処理装置により基板を処理する際に被処理基板の,そ
の属する温度領域に隣接するより高温度の温度領域側に
配され基板への該高温度温度領域からの輻射熱を防止し
て基板をその属する温度領域の温度に保持しようとする
輻射熱防止板において、金属板または金属箔もしくは金
属膜の一方の面もしくは両方の面が無機質の熱絶縁材で
コーティング状態に覆われてなることを特徴とする輻射
熱防止板。
1. A substrate to be processed is arranged in a temperature region other than a temperature region where the temperature is the highest in a container having a plurality of temperature regions whose inner spaces are adjacent to each other in one direction, and a processing gas is contained inside the container. When a substrate is processed by a decompression processing device that introduces the substrate into a space in a reduced pressure state and processes the substrate, the substrate to be processed is placed on the side of a higher temperature temperature region adjacent to the temperature region to which the substrate belongs In a radiant heat prevention plate that prevents radiant heat from the temperature range and keeps the substrate at the temperature of the temperature range to which it belongs, one or both surfaces of the metal plate or metal foil or metal film is an inorganic heat insulating material. A radiant heat prevention plate characterized by being covered with a coating state.
【請求項2】請求項第1項に記載の輻射熱防止板におい
て、金属板または金属箔もしくは金属膜の一方の面もし
くは両方の面をコーティング状態に覆う無機質の熱絶縁
材を単結晶Al2 3 としたことを特徴とする輻射熱防
止板。
2. The radiant heat preventive plate according to claim 1, wherein the inorganic heat insulating material covering one or both surfaces of the metal plate, the metal foil or the metal film in a coated state is a single crystal Al 2 O. A radiant heat prevention plate characterized by having 3 .
【請求項3】請求項第1項に記載の輻射熱防止板におい
て、金属板または金属箔もしくは金属膜の一方の面もし
くは両方の面をコーティング状態に覆う無機質の熱絶縁
材を石英としたことを特徴とする輻射熱防止板。
3. The radiant heat preventive plate according to claim 1, wherein the inorganic heat insulating material for covering one surface or both surfaces of the metal plate, the metal foil or the metal film in a coated state is quartz. Characteristic radiant heat prevention plate.
【請求項4】請求項第1項に記載の輻射熱防止板を、被
処理基板がその属する温度領域の温度を保持するように
使用する方法であって、被処理基板が属する温度領域の
温度と、輻射熱防止板が配される側の高温度温度領域の
温度との差約25℃ごとに輻射熱防止板を1枚づつ増す
ことを特徴とする輻射熱防止板の使用方法。
4. A method of using the radiant heat preventive plate according to claim 1 so as to maintain the temperature of a temperature region to which the substrate to be processed belongs, wherein the temperature of the temperature region to which the substrate to be processed belongs A method for using the radiant heat preventive plate, characterized in that the radiant heat preventive plate is increased by one every about 25 ° C. from the temperature in the high temperature temperature region on the side where the radiant heat preventive plate is arranged.
JP22150393A 1993-09-07 1993-09-07 Radiation heat preventing plate and use thereof Pending JPH0778779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22150393A JPH0778779A (en) 1993-09-07 1993-09-07 Radiation heat preventing plate and use thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22150393A JPH0778779A (en) 1993-09-07 1993-09-07 Radiation heat preventing plate and use thereof

Publications (1)

Publication Number Publication Date
JPH0778779A true JPH0778779A (en) 1995-03-20

Family

ID=16767736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22150393A Pending JPH0778779A (en) 1993-09-07 1993-09-07 Radiation heat preventing plate and use thereof

Country Status (1)

Country Link
JP (1) JPH0778779A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150396A (en) * 1998-11-16 2000-05-30 Sakaguchi Dennetsu Kk Thermal radiation reflector
WO2022145255A1 (en) * 2020-12-28 2022-07-07 株式会社フルヤ金属 Silica heat reflection plate
WO2022145256A1 (en) * 2020-12-28 2022-07-07 株式会社フルヤ金属 Silica heat-reflecting plate
JP2022105255A (en) * 2020-12-28 2022-07-13 株式会社フルヤ金属 Silica heat reflection plate

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150396A (en) * 1998-11-16 2000-05-30 Sakaguchi Dennetsu Kk Thermal radiation reflector
WO2022145255A1 (en) * 2020-12-28 2022-07-07 株式会社フルヤ金属 Silica heat reflection plate
WO2022145256A1 (en) * 2020-12-28 2022-07-07 株式会社フルヤ金属 Silica heat-reflecting plate
JP2022104503A (en) * 2020-12-28 2022-07-08 株式会社フルヤ金属 Silica thermal reflection plate
JP2022105255A (en) * 2020-12-28 2022-07-13 株式会社フルヤ金属 Silica heat reflection plate

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