JP2022104503A - Silica thermal reflection plate - Google Patents

Silica thermal reflection plate Download PDF

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JP2022104503A
JP2022104503A JP2021098990A JP2021098990A JP2022104503A JP 2022104503 A JP2022104503 A JP 2022104503A JP 2021098990 A JP2021098990 A JP 2021098990A JP 2021098990 A JP2021098990 A JP 2021098990A JP 2022104503 A JP2022104503 A JP 2022104503A
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silica
plate
silica plate
reflector
film
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JP7029567B1 (en
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智弘 丸子
Toshihiro Maruko
好裕 石黒
Yoshihiro Ishiguro
尊信 松村
Takanobu Matsumura
裕也 大川
Yuya Okawa
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Furuya Metal Co Ltd
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Priority to PCT/JP2021/046707 priority Critical patent/WO2022145256A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

To provide a long-life silica thermal reflection plate which can provide a greater reflection area ratio, has a small thermal capacity which is capable of saving energy and a high reflectance, suppresses contamination in a furnace.SOLUTION: A silica thermal reflection plate 100 includes a silica plate 1 and a reflector 5 that reflects infrared rays and is located inside of the silica plate. The silica plate has a lamination structure in which a first silica plate 1a and a second silica plate 1b are arranged facing each other and their peripheral parts are circularly and continuously joined to each other along the circumference. The laminate structure includes a sealed cavity 12 and a third silica plate 9 housed in the cavity. The reflector is a thin film, plate, or foil, and a surface layer including at least a reflection plane of the reflector is made of Ir, Pt, Rh, Ru, Re, or Hf, or of an alloy containing at least one kind selected from Ir, Pt, Rh, Ru, Re, or Hf.SELECTED DRAWING: Figure 2

Description

本開示は、例えば、半導体・電子部品の分野で、ウエハ、基板等を高温で熱処理する種々の熱処理装置の熱反射板として利用でき、高反射率を有することから熱処理装置の省エネルギー化が可能であり、また、汚染を抑制することが可能なシリカ熱反射板に関する。 The present disclosure can be used, for example, in the field of semiconductors and electronic components as a heat reflector of various heat treatment devices for heat-treating wafers, substrates, etc. at high temperatures, and since it has high reflectance, it is possible to save energy in the heat treatment devices. Also related to silica heat reflectors capable of suppressing contamination.

半導体ウエハの製造または処理工程においては、半導体ウエハに各種の性質を付与するため熱処理作業が行われている。例えば、半導体ウエハを高純度石英製の炉芯管に収納し、炉芯管内の雰囲気を制御して、熱処理作業が行われる。この熱処理工程に使用される熱処理装置では、炉内の高温維持と炉床部への熱放散を防止するため、炉内と炉床との間に炉開口部を塞ぐように保温体（蓋体）が設けられている。 In the process of manufacturing or processing a semiconductor wafer, a heat treatment operation is performed in order to impart various properties to the semiconductor wafer. For example, a semiconductor wafer is housed in a high-purity quartz furnace core tube, and the atmosphere inside the furnace core tube is controlled to perform heat treatment work. In the heat treatment apparatus used in this heat treatment step, in order to maintain a high temperature in the furnace and prevent heat from being dissipated to the hearth, a heat insulating body (lid) is used so as to close the furnace opening between the inside and the hearth. ) Is provided.

このような保温体としては、熱処理室の開口部を閉塞し、互いに離間して積層され、かつ熱処理室に露出する石英板を有する保温体があり、石英板は表面が平滑で気泡がなく、石英板の内部に金薄膜が形成されていて、金薄膜は、金蒸着により形成されたという特徴がある（例えば、特許文献１を参照。）。 As such a heat insulating body, there is a heat insulating body having a quartz plate that closes the opening of the heat treatment chamber, is laminated apart from each other, and is exposed to the heat treatment chamber. A gold thin film is formed inside the quartz plate, and the gold thin film is characterized by being formed by gold vapor deposition (see, for example, Patent Document 1).

また、石英管を中心に通すための孔及び石英ロッドを通すための孔を有する石英板の上に、白金（Ｐｔ）及び酸化物（ＳｉＯやＰｂＯなど）の混合物に有機物を加えてペースト状にしたものをスクリーン印刷により塗布し、これを焼き固めることにより抵抗発熱体よりなる例えば厚さ５～１０ミクロンの反射面を形成する技術の開示がある（例えば、特許文献２を参照。）。 Further, on a quartz plate having a hole for passing a quartz tube in the center and a hole for passing a quartz rod, an organic substance is added to a mixture of platinum (Pt) and an oxide (SiO, PbO, etc.) to form a paste. There is a disclosure of a technique for forming a reflective surface having a thickness of, for example, 5 to 10 microns, which is made of a resistance heating element, by applying the obtained product by screen printing and baking it (see, for example, Patent Document 2).

縦型熱処理炉の断熱構造体が、複数本の支柱と、これら支柱に上下方向に所定間隔で設けられた複数枚の反射性を有する遮熱板とから構成されている技術の開示がある（例えば、特許文献３を参照。）。特許文献３によれば、遮熱板は、反射膜と、この反射膜の表面を被覆する透明石英層とから形成されている。この遮熱板を形成する一つの方法としては、透明石英層を形成する円形の一対の透明石英板を用い、その一方の透明石英板の片方の面に反射膜を設け、この反射膜をもう一方の透明石英板との間で挟み込み、両透明石英板の周縁部を溶接して密封および一体化する方法がある。 There is a disclosure of a technique in which the heat insulating structure of a vertical heat treatment furnace is composed of a plurality of columns and a plurality of reflective heat shield plates provided on the columns at predetermined intervals in the vertical direction ( For example, see Patent Document 3). According to Patent Document 3, the heat shield plate is formed of a reflective film and a transparent quartz layer covering the surface of the reflective film. As one method of forming this heat shield plate, a pair of circular transparent quartz plates for forming a transparent quartz layer are used, a reflective film is provided on one side of one of the transparent quartz plates, and the reflective film is used. There is a method of sandwiching it between one transparent quartz plate and welding the peripheral portions of both transparent quartz plates to seal and integrate them.

特開２００１‐１０２３１９号公報Japanese Unexamined Patent Publication No. 2001-102319 特開平９‐１４８３１５号公報Japanese Unexamined Patent Publication No. 9-148315 特開平１１－９７３６０号公報Japanese Unexamined Patent Publication No. 11-97360 特開２０１９‐２１７５３０号公報JP-A-2019-217530 特許４１７２８０６号公報Japanese Patent No. 4172806 特許６０３２６６７号公報Japanese Patent No. 6032667

特許文献１では反射膜として金薄膜が用いられているが、金の融点は１０６４℃であり、１５００℃以上の熱処理時に、溶融したり、膜がめくれあがったり、縮小したりする問題があり、実用上耐熱性に問題があった。 In Patent Document 1, a gold thin film is used as a reflective film, but the melting point of gold is 1064 ° C., and there is a problem that it melts, the film is turned up or shrunk during heat treatment at 1500 ° C. or higher. There was a problem with heat resistance in practice.

特許文献２では、反射板兼ヒーターとしての利用のため、中央に石英管でヒーター導通箇所を設けているが、当構造によって一部輻射熱を遮蔽しきれない箇所が発生する。より高い省エネルギー化のためには、反射面積率を多く取り、尚且つ反射板をより薄くし、熱容量を下げる必要がある。 In Patent Document 2, a heater conduction portion is provided in the center by a quartz tube for use as a reflector and a heater, but a portion where radiant heat cannot be completely shielded is generated due to this structure. In order to save more energy, it is necessary to take a large reflection area ratio, make the reflector thinner, and reduce the heat capacity.

特許文献３では、石英板で挟み込み、溶接を行う手法がとられているが、熱の影響を受けるため、薄膜で実施する際には膜が剥がれてしまう問題が生じる。さらに内部を真空に保つことは難しく、高温使用時の内圧上昇によって薄膜が破損するリスクは避けられない。また透明石英を流し込み作製する手法においても、金属薄膜に実施する場合は熱的、物理的ダメージを避けることはできない。 In Patent Document 3, a method of sandwiching between quartz plates and performing welding is adopted, but since it is affected by heat, there is a problem that the film is peeled off when it is carried out with a thin film. Furthermore, it is difficult to keep the inside in a vacuum, and the risk of damaging the thin film due to an increase in internal pressure during high-temperature use is unavoidable. Further, even in the method of casting transparent quartz, thermal and physical damage cannot be avoided when it is applied to a metal thin film.

本開示は、従来手法よりも反射面積率をより多く確保することができ、熱容量が小さく省エネルギー化が可能で、高反射率を有し、炉内の汚染が抑制され、長寿命のシリカ熱反射板を提供することを目的とする。 The present disclosure can secure a larger reflection area ratio than the conventional method, has a small heat capacity, can save energy, has a high reflectance, suppresses contamination in the furnace, and has a long life of silica heat reflection. The purpose is to provide a board.

本発明者らは、鋭意検討した結果、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ又はＭｏを含む表面層を反射面とする反射体を、第１シリカ板と第２シリカ板による合わせ板の構造を有するシリカ板に設けたキャビティ内に配置するとともに、前記合わせ板とは別の第３シリカ板を前記キャビティ内に配置することによって上記課題が解決されることを見出し、本発明を完成させた。すなわち、本発明に係るシリカ熱反射板は、シリカ板と、該シリカ板の内部に配置されて該シリカ板によって外周囲が完全に覆われてなり、かつ、該シリカ板の一方の表面に入射した赤外線を反射する反射体と、を有するシリカ熱反射板であって、前記シリカ板は、第１シリカ板と第２シリカ板とが対向して配置されて周縁部同士が周縁に沿って環状に連続して接合された合わせ板の構造を有し、該合わせ板の構造は、前記第１シリカ板及び前記第２シリカ板の対向し合う面の間に設けられ、かつ、前記第１シリカ板側及び前記第２シリカ板側の少なくとも一方に前記周縁部同士の接合部によって密閉されているキャビティと、該キャビティ内に収容された第３シリカ板と、を有し、前記反射体は、薄膜、板又は箔であり、前記反射体の少なくとも反射面を含む表面層は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ又はＭｏからなるか、又は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ及びＭｏから選ばれる少なくともいずれか１種を含む合金からなることを特徴とする。 As a result of diligent studies, the present inventors have made a reflector having a surface layer containing Ir, Pt, Rh, Ru, Re, Hf or Mo as a reflecting surface of a laminated plate made of a first silica plate and a second silica plate. We have found that the above problems can be solved by arranging the third silica plate different from the laminated plate in the cavity while arranging it in the cavity provided in the silica plate having a structure, and complete the present invention. rice field. That is, the silica heat-reflecting plate according to the present invention is arranged inside the silica plate and the outer periphery is completely covered by the silica plate, and is incident on one surface of the silica plate. A silica thermal reflector having a reflector that reflects the infrared rays, wherein the first silica plate and the second silica plate are arranged so as to face each other, and peripheral portions thereof are annular along the peripheral edge. It has a structure of a laminated plate continuously bonded to the first silica plate, and the structure of the laminated plate is provided between the facing surfaces of the first silica plate and the second silica plate, and the first silica. The reflector has a cavity sealed by a joint portion between the peripheral portions on at least one of the plate side and the second silica plate side, and a third silica plate housed in the cavity. A thin film, plate or foil whose surface layer including at least the reflective surface of the reflector is made of Ir, Pt, Rh, Ru, Re, Hf or Mo, or Ir, Pt, Rh, Ru, Re, It is characterized by being composed of an alloy containing at least one selected from Hf and Mo.

本発明に係るシリカ熱反射板では、前記第３シリカ板は、前記第１シリカ板の表面と向かい合わせとなる表面又は前記第２シリカ板の表面と向かい合わせとなる表面のうち少なくとも一方の表面上に前記反射体として形成した薄膜を有し、該薄膜は、前記第３シリカ板の表面側から順に、下地膜と、前記反射面を含む表面層としての反射膜と、を有する積層膜であり、前記下地膜は、Ｔａ、Ｍｏ、Ｔｉ、Ｚｒ、Ｎｂ、Ｃｒ、Ｗ、Ｃｏ又はＮｉからなるか、又は、Ｔａ、Ｍｏ、Ｔｉ、Ｚｒ、Ｎｂ、Ｃｒ、Ｗ、Ｃｏ及びＮｉから選ばれる少なくともいずれか１種を含む合金からなり、前記反射膜は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ又はＭｏからなるか、又は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ及びＭｏから選ばれる少なくともいずれか１種を含む合金からなり、前記下地膜と前記反射膜とが異なる組成を有していることが好ましい。第３シリカ板に積層膜が成膜されることで、接合工程中に反射膜へ不純物が入ることを抑制することができ、反射体をシリカ板内に簡易に配置することができ、生産性に優れたシリカ熱反射板とすることができる。また、第３シリカ板の両面に積層膜が成膜されていると、シリカ熱反射板の表裏を気にすることなく使用することができる。 In the silica heat reflecting plate according to the present invention, the third silica plate is the surface of at least one of the surface facing the surface of the first silica plate or the surface facing the surface of the second silica plate. The thin film having a thin film formed as the reflector on the surface is a laminated film having a base film and a reflective film as a surface layer including the reflective surface in order from the surface side of the third silica plate. Yes, the undercoat is made of Ta, Mo, Ti, Zr, Nb, Cr, W, Co or Ni, or is selected from Ta, Mo, Ti, Zr, Nb, Cr, W, Co and Ni. The reflective film is made of an alloy containing at least one of them, and the reflective film is made of Ir, Pt, Rh, Ru, Re, Hf or Mo, or is selected from Ir, Pt, Rh, Ru, Re, Hf and Mo. It is preferable that the base film and the reflective film have different compositions because they are made of an alloy containing at least one of them. By forming a laminated film on the third silica plate, it is possible to suppress impurities from entering the reflective film during the bonding process, and the reflector can be easily arranged in the silica plate, resulting in productivity. It can be an excellent silica heat reflecting plate. Further, when the laminated film is formed on both sides of the third silica plate, it can be used without worrying about the front and back sides of the silica heat reflector.

本発明に係るシリカ熱反射板では、前記第１シリカ板の前記キャビティ内の表面上又は前記第２シリカ板の前記キャビティ内の表面上に前記反射体として形成した薄膜を有し、該薄膜は、前記第１シリカ板の前記キャビティ内の表面側又は前記第２シリカ板の前記キャビティ内の表面側から順に、下地膜と、前記反射面を含む表面層としての反射膜と、を有する積層膜であり、前記下地膜は、Ｔａ、Ｍｏ、Ｔｉ、Ｚｒ、Ｎｂ、Ｃｒ、Ｗ、Ｃｏ又はＮｉからなるか、又は、Ｔａ、Ｍｏ、Ｔｉ、Ｚｒ、Ｎｂ、Ｃｒ、Ｗ、Ｃｏ及びＮｉから選ばれる少なくともいずれか１種を含む合金からなり、前記反射膜は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ又はＭｏからなるか、又は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ及びＭｏから選ばれる少なくともいずれか１種を含む合金からなり、前記下地膜と前記反射膜とが異なる組成を有していることが好ましい。前記第１シリカ板のキャビティ内の表面上又は前記第２シリカ板のキャビティ内の表面上に反射体を形成しているため、薄膜周縁からの膜の腐食及び膜の剥がれが生じにくい。 The silica heat reflecting plate according to the present invention has a thin film formed as the reflector on the surface of the first silica plate in the cavity or on the surface of the second silica plate in the cavity, and the thin film has a thin film. , A laminated film having a base film and a reflective film as a surface layer including the reflective surface, in this order from the surface side of the first silica plate in the cavity or the surface side of the second silica plate in the cavity. The base film is made of Ta, Mo, Ti, Zr, Nb, Cr, W, Co or Ni, or is selected from Ta, Mo, Ti, Zr, Nb, Cr, W, Co and Ni. The reflective film is made of an alloy containing at least one of Ir, Pt, Rh, Ru, Re, Hf or Mo, or is made of Ir, Pt, Rh, Ru, Re, Hf and Mo. It is preferably made of an alloy containing at least one selected, and the undercoat film and the reflective film have different compositions. Since the reflector is formed on the surface in the cavity of the first silica plate or on the surface in the cavity of the second silica plate, corrosion of the film and peeling of the film from the peripheral edge of the thin film are unlikely to occur.

本発明に係るシリカ熱反射板では、前記第１シリカ板の前記キャビティ内の表面と前記第３シリカ板の表面とに挟まれる位置又は前記第２シリカ板の前記キャビティ内の表面と前記第３シリカ板の表面とに挟まれる位置の少なくともいずれか一方の位置に、前記反射体が配置されており、該反射体が、板又は箔であり、かつ、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ又はＭｏからなるか、又は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ及びＭｏから選ばれる少なくともいずれか１種を含む合金からなることが好ましい。キャビティ内に反射体としての板又は箔が収容された状態となっており、板又は箔の腐食が生じにくい。さらに、周縁部同士の接合部に、板又は箔に起因する剥がす方向の応力がかかりにくい。 In the silica heat reflecting plate according to the present invention, the position sandwiched between the surface of the first silica plate in the cavity and the surface of the third silica plate or the surface of the second silica plate in the cavity and the third silica plate. The reflector is arranged at at least one of the positions sandwiched between the surface of the silica plate, the reflector is a plate or a foil, and Ir, Pt, Rh, Ru, Re, It is preferably composed of Hf or Mo, or an alloy containing at least one selected from Ir, Pt, Rh, Ru, Re, Hf and Mo. A plate or foil as a reflector is housed in the cavity, and corrosion of the plate or foil is unlikely to occur. Further, it is difficult to apply stress in the peeling direction due to the plate or foil to the joints between the peripheral edges.

本発明に係るシリカ熱反射板では、前記第１シリカ板及び前記第２シリカ板は、前記第３シリカ板に対して肉厚方向に圧縮応力をかけていることが好ましい。反射体を対向する第１シリカ板、第２シリカ板又は第３シリカ板に密着させることができ、反射膜とシリカ板が部分的に接触することで発生する干渉縞をより抑制することができる。また、昇降温に伴う反射膜の剥離を物理的に抑制することができ、反射板を長持ちさせることができる。 In the silica heat reflector according to the present invention, it is preferable that the first silica plate and the second silica plate are subjected to compressive stress in the wall thickness direction with respect to the third silica plate. The reflector can be brought into close contact with the facing first silica plate, second silica plate or third silica plate, and the interference fringes generated by the partial contact between the reflective film and the silica plate can be further suppressed. .. In addition, the peeling of the reflective film due to the temperature rise and fall can be physically suppressed, and the reflector can be made to last for a long time.

本発明に係るシリカ熱反射板では、前記第３シリカ板は、前記第１シリカ板の表面と向かい合わせとなる表面又は前記第２シリカ板の表面と向かい合わせとなる表面のうち少なくとも一方の表面上に前記反射体として形成した薄膜を有し、該薄膜は、Ｍｏ膜又はＭｏを５０質量％以上含む合金膜であることが好ましい。Ｍｏ膜又はＭｏを５０質量％以上含む合金膜であるときは、反射体として形成した薄膜が単層膜であってもよい。 In the silica heat reflecting plate according to the present invention, the third silica plate is the surface of at least one of the surface facing the surface of the first silica plate or the surface facing the surface of the second silica plate. It has a thin film formed as the reflector on the top, and the thin film is preferably a Mo film or an alloy film containing 50% by mass or more of Mo. When the Mo film or the alloy film containing 50% by mass or more of Mo is used, the thin film formed as a reflector may be a single-layer film.

本発明に係るシリカ熱反射板では、前記第１シリカ板の前記キャビティ内の表面上又は前記第２シリカ板の前記キャビティ内の表面上に前記反射体として形成した薄膜を有し、該薄膜は、Ｍｏ膜又はＭｏを５０質量％以上含む合金膜であることが好ましい。Ｍｏ膜又はＭｏを５０質量％以上含む合金膜であるときは、反射体として形成した薄膜が単層膜であってもよい。 The silica heat reflecting plate according to the present invention has a thin film formed as the reflector on the surface of the first silica plate in the cavity or on the surface of the second silica plate in the cavity, and the thin film has a thin film. , Mo film or an alloy film containing 50% by mass or more of Mo is preferable. When the Mo film or the alloy film containing 50% by mass or more of Mo is used, the thin film formed as a reflector may be a single-layer film.

本発明に係るシリカ熱反射板では、前記反射体の厚さは、０．０１μｍ以上５ｍｍ以下であることが好ましい。反射体による輻射熱の反射効率を保持しつつ、シリカ熱反射板の熱容量を小さくすることができる。 In the silica heat reflector according to the present invention, the thickness of the reflector is preferably 0.01 μm or more and 5 mm or less. The heat capacity of the silica heat reflector can be reduced while maintaining the reflection efficiency of radiant heat by the reflector.

本発明に係るシリカ熱反射板では、前記周縁部同士の接合部は、表面活性化接合部であることが好ましい。一般的な溶接手法よりも接合幅を短くすることで、より輻射熱を炉内へ反射させることができる。また、反射体である薄膜が接合プロセスによる熱的、物理的ダメージを受けにくい。また、接合部における接合強度が高められており、シリカ熱反射板はより長寿命となり、また耐食性が高まり、炉への汚染が抑制される。 In the silica heat reflector according to the present invention, it is preferable that the joint portion between the peripheral portions is a surface-activated joint portion. By making the joint width shorter than that of a general welding method, radiant heat can be reflected more into the furnace. In addition, the thin film, which is a reflector, is less susceptible to thermal and physical damage due to the bonding process. In addition, the joint strength at the joint is increased, the silica heat reflector has a longer life, corrosion resistance is increased, and contamination of the furnace is suppressed.

本開示によれば、従来手法よりも反射面積率をより多く確保することで高反射率を有し、熱容量が小さく省エネルギー化が可能で、高反射率を有し、炉内の汚染が抑制されており、長寿命のシリカ熱反射板を提供することができる。 According to the present disclosure, it has a high reflectance by securing a larger reflecting area ratio than the conventional method, has a small heat capacity, can save energy, has a high reflectance, and suppresses contamination in the furnace. Therefore, it is possible to provide a silica heat reflector having a long life.

本実施形態に係るシリカ熱反射板の一例を示す平面概略図である。It is a plane schematic diagram which shows an example of the silica heat reflector which concerns on this embodiment. Ａ－Ａ断面の第１例を示す概略図である。It is a schematic diagram which shows the 1st example of the AA cross section. 第１例の接合前の分解図である。It is an exploded view before joining of the 1st example. Ａ－Ａ断面の第２例を示す概略図である。It is a schematic diagram which shows the 2nd example of the AA cross section. 第２例の接合前の分解図である。It is an exploded view before joining of the 2nd example. Ａ－Ａ断面の第３例を示す概略図である。It is a schematic diagram which shows the 3rd example of the AA cross section. 第３例の接合前の分解図である。It is an exploded view before joining of the 3rd example. Ａ－Ａ断面の第４例を示す概略図である。It is a schematic diagram which shows the 4th example of the AA cross section. 第４例の接合前の分解図である。It is an exploded view before joining of the 4th example. Ａ－Ａ断面の第５例を示す概略図である。It is a schematic diagram which shows the 5th example of the AA cross section. 第５例の接合前の分解図である。It is an exploded view before joining of the 5th example. Ａ－Ａ断面の第６例を示す概略図である。It is a schematic diagram which shows the 6th example of the AA cross section. 第６例の接合前の分解図である。It is an exploded view before joining of the 6th example. Ａ－Ａ断面の第７例を示す概略図である。It is a schematic diagram which shows the 7th example of the AA cross section. 第７例の接合前の分解図である。It is an exploded view before joining of the 7th example. Ａ－Ａ断面の第８例を示す概略図である。It is a schematic diagram which shows the 8th example of the AA cross section. 第８例の接合前の分解図である。It is an exploded view before joining of the 8th example. Ａ－Ａ断面の第９例を示す概略図である。It is a schematic diagram which shows the 9th example of the AA cross section. 第９例の接合前の分解図である。It is an exploded view before joining of the 9th example. Ａ－Ａ断面の第１０例を示す概略図である。It is a schematic diagram which shows the tenth example of the AA cross section. 第１０例の接合前の分解図である。It is an exploded view before joining of the tenth example. 実施例１の反射体の反射率を示すグラフである。It is a graph which shows the reflectance of the reflector of Example 1. FIG. １０００℃における物質が放射する黒体放射の波長と放射量との関係を示すグラフである。It is a graph which shows the relationship between the wavelength of blackbody radiation emitted by a substance at 1000 degreeC, and the amount of radiation. 実施例２の反射体の反射率を示すグラフである。It is a graph which shows the reflectance of the reflector of Example 2. FIG. 実施例３の反射体の反射率を示すグラフである。It is a graph which shows the reflectance of the reflector of Example 3. FIG.

以降、本発明について実施形態を示して詳細に説明するが本発明はこれらの記載に限定して解釈されない。本発明の効果を奏する限り、実施形態は種々の変形をしてもよい。 Hereinafter, the present invention will be described in detail by showing embodiments, but the present invention is not construed as being limited to these descriptions. The embodiments may be modified in various ways as long as the effects of the present invention are exhibited.

［反射体が薄膜である形態］
図１、図２及び図３を参照して、本実施形態に係るシリカ熱反射板について説明する。本実施形態に係るシリカ熱反射板１００は、シリカ板１と、シリカ板１の内部に配置されてシリカ板１によって外周囲が完全に覆われてなり、かつ、シリカ板１の一方の表面に入射した赤外線を反射する反射体５とを有する。図２においては、上から下に向かう方向が赤外線の入射方向である。シリカ板１は、第１シリカ板１ａと第２シリカ板１ｂとが対向して配置されて周縁部同士が周縁に沿って環状に連続して接合された合わせ板の構造を有し、合わせ板の構造は、第１シリカ板１ａ及び第２シリカ板１ｂの対向し合う面の間に設けられ、かつ、第１シリカ板１ａ側に周縁部同士の接合部２によって密閉されているキャビティ１２と、キャビティ１２内に収容された第３シリカ板９と、を有し、反射体５は、薄膜であり、反射体５の少なくとも反射面を含む表面層は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ又はＭｏからなるか、又は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ及びＭｏから選ばれる少なくともいずれか１種を含む合金からなる。図２では、反射体５が積層膜である形態が示されており、下地膜３の上に反射面を含む表面層としての反射膜４が形成されている。 [Form in which the reflector is a thin film]
The silica heat reflector according to the present embodiment will be described with reference to FIGS. 1, 2 and 3. The silica heat reflecting plate 100 according to the present embodiment is arranged inside the silica plate 1 and the silica plate 1 so that the outer periphery is completely covered by the silica plate 1 and is on one surface of the silica plate 1. It has a reflector 5 that reflects incident infrared rays. In FIG. 2, the direction from top to bottom is the incident direction of infrared rays. The silica plate 1 has a laminated plate structure in which the first silica plate 1a and the second silica plate 1b are arranged so as to face each other and the peripheral edges are continuously joined in an annular shape along the peripheral edge. The structure is provided between the facing surfaces of the first silica plate 1a and the second silica plate 1b, and is sealed with the cavity 12 on the first silica plate 1a side by the joint portion 2 between the peripheral portions. , The third silica plate 9 housed in the cavity 12, the reflector 5 is a thin film, and the surface layer including at least the reflective surface of the reflector 5 is Ir, Pt, Rh, Ru, Re. , Hf or Mo, or an alloy containing at least one selected from Ir, Pt, Rh, Ru, Re, Hf and Mo. FIG. 2 shows a form in which the reflector 5 is a laminated film, and a reflective film 4 as a surface layer including a reflective surface is formed on the base film 3.

図２及び図３において、第１シリカ板１ａと第２シリカ板１ｂとは、周縁部同士の接合部２によって、合わせ板の構造を形成している。周縁部同士の接合部２は、図１に示すように、シリカ板１の周縁に沿って環状に連続している。図１では、周縁部同士の接合部２は、第２シリカ板１ｂを透視して第１シリカ板１ａと第２シリカ板１ｂとの境界部としてみることができ、グレーの領域として図示した。合わせ板の構造とすることで、シリカ板１を薄くできるので、熱容量を小さくすることができる。 In FIGS. 2 and 3, the first silica plate 1a and the second silica plate 1b form a laminated plate structure by a joint portion 2 between peripheral portions. As shown in FIG. 1, the joint portion 2 between the peripheral portions is continuous in an annular shape along the peripheral edge of the silica plate 1. In FIG. 1, the joint portion 2 between the peripheral portions can be seen as a boundary portion between the first silica plate 1a and the second silica plate 1b by seeing through the second silica plate 1b, and is shown as a gray area. By adopting the structure of the laminated plate, the silica plate 1 can be made thin, so that the heat capacity can be reduced.

反射体５を正面に見たシリカ板１の形状は、例えば、円形、楕円形、長方形又は正方形であり、円形が好ましい。円形の直径は、例えば、５～５０ｃｍである。周縁部同士の接合部２の環状形状の幅は、例えば０．５～２０ｍｍである。シリカ板１の肉厚は０．１～２０ｍｍであることが好ましく、０．２～１０ｍｍであることがより好ましい。第１シリカ板１ａの肉厚は０．０５～１０ｍｍであることが好ましく、０．５～１．５ｍｍであることがより好ましい。第２シリカ板１ｂの肉厚は０．０５～１０ｍｍであることが好ましく、０．５～１．５ｍｍであることがより好ましい。 The shape of the silica plate 1 with the reflector 5 viewed from the front is, for example, a circle, an ellipse, a rectangle, or a square, and a circle is preferable. The circular diameter is, for example, 5 to 50 cm. The width of the annular shape of the joint portion 2 between the peripheral portions is, for example, 0.5 to 20 mm. The wall thickness of the silica plate 1 is preferably 0.1 to 20 mm, more preferably 0.2 to 10 mm. The wall thickness of the first silica plate 1a is preferably 0.05 to 10 mm, more preferably 0.5 to 1.5 mm. The wall thickness of the second silica plate 1b is preferably 0.05 to 10 mm, more preferably 0.5 to 1.5 mm.

シリカ板１は、結晶性シリカ板又は非晶質シリカ板である形態を包含する。シリカ板１の不純物濃度は、１００ｐｐｍ以下、好ましくは９０ｐｐｍ以下である。 The silica plate 1 includes a form of a crystalline silica plate or an amorphous silica plate. The impurity concentration of the silica plate 1 is 100 ppm or less, preferably 90 ppm or less.

キャビティ１２は、第１シリカ板１ａ側に設けられた形態、第１シリカ板１ａ側及び第２シリカ板１ｂ側の両側に設けられた形態及び第２シリカ板１ｂ側に設けられた形態がある。図２及び図３ではキャビティ１２が、第１シリカ板１ａ側に設けられた形態を示している。この形態では、第１シリカ板１ａの一方の表面に凹部が設けられており、第２シリカ板１ｂは凹部がない平板であり、第１シリカ板１ａ及び第２シリカ板１ｂの合わせ板の構造とすることで、キャビティ１２は、第１シリカ板１ａ側のみに設けられる。その結果、キャビティ１２は、第１シリカ板１ａ及び第２シリカ板１ｂの対向し合う面の間に設けられ、かつ、第１シリカ板１ａ側に周縁部同士の接合部２によって密閉されている。図４～図１１に示した形態についても、キャビティ１２は、第１シリカ板１ａ側のみに設けられている。 The cavity 12 has a form provided on the first silica plate 1a side, a form provided on both sides of the first silica plate 1a side and the second silica plate 1b side, and a form provided on the second silica plate 1b side. .. 2 and 3 show a form in which the cavity 12 is provided on the first silica plate 1a side. In this embodiment, a recess is provided on one surface of the first silica plate 1a, the second silica plate 1b is a flat plate having no recess, and the structure of the laminated plate of the first silica plate 1a and the second silica plate 1b. Therefore, the cavity 12 is provided only on the first silica plate 1a side. As a result, the cavity 12 is provided between the facing surfaces of the first silica plate 1a and the second silica plate 1b, and is sealed on the first silica plate 1a side by the joint portion 2 between the peripheral portions. .. Also in the modes shown in FIGS. 4 to 11, the cavity 12 is provided only on the first silica plate 1a side.

図１２及び図１３では、キャビティ１２が、第１シリカ板１ａ側及び第２シリカ板１ｂ側の両側にわたって設けられた形態を示している。この形態では、第１シリカ板１ａの一方の表面に凹部が設けられており、第２シリカ板１ｂの一方の表面に凹部が設けられており、凹部同士が合わさるように、第１シリカ板１ａ及び第２シリカ板１ｂの合わせ板の構造とする。その結果、キャビティ１２は、第１シリカ板１ａ側及び第２シリカ板１ｂ側の両方に設けられる。図１４～図１７に示した形態についても、キャビティ１２は、第１シリカ板１ａ側及び第２シリカ板１ｂ側の両方に設けられる。 12 and 13 show a form in which the cavity 12 is provided on both sides of the first silica plate 1a side and the second silica plate 1b side. In this embodiment, a recess is provided on one surface of the first silica plate 1a, and a recess is provided on one surface of the second silica plate 1b so that the recesses fit together. And the structure of the laminated plate of the second silica plate 1b. As a result, the cavity 12 is provided on both the first silica plate 1a side and the second silica plate 1b side. Also in the form shown in FIGS. 14 to 17, the cavity 12 is provided on both the first silica plate 1a side and the second silica plate 1b side.

キャビティ１２が、第２シリカ板１ｂ側に設けられた形態は図示していないが、例えば、図４～図７に示す形態において、第１シリカ板１ａ側に設けたキャビティ１２の代わりに、第２シリカ板１ｂ側にキャビティ１２を設け、反射体５として積層膜が成膜された第３ガラス板３を図４～図７に示す形態と同じ向きでキャビティ１２内に収容した形態が例示される。この形態では、第１シリカ板１ａは凹部がない平板であり、第２シリカ板１ｂの一方の表面に凹部が設けられており、第１シリカ板１ａ及び第２シリカ板１ｂの合わせ板の構造とすることで、キャビティ１２は、第２シリカ板１ｂ側のみに設けられる。その結果、キャビティ１２は、第１シリカ板１ａ及び第２シリカ板１ｂの対向し合う面の間に設けられ、かつ、第２シリカ板１ｂ側に周縁部同士の接合部２によって密閉されている。 The form in which the cavity 12 is provided on the second silica plate 1b side is not shown, but for example, in the form shown in FIGS. 4 to 7, instead of the cavity 12 provided on the first silica plate 1a side, a first cavity 12 is provided. 2 An embodiment in which the cavity 12 is provided on the silica plate 1b side and the third glass plate 3 on which the laminated film is formed as the reflector 5 is housed in the cavity 12 in the same orientation as shown in FIGS. 4 to 7 is exemplified. Ru. In this embodiment, the first silica plate 1a is a flat plate having no recess, and the recess is provided on one surface of the second silica plate 1b, and the structure of the laminated plate of the first silica plate 1a and the second silica plate 1b is provided. Therefore, the cavity 12 is provided only on the second silica plate 1b side. As a result, the cavity 12 is provided between the facing surfaces of the first silica plate 1a and the second silica plate 1b, and is sealed on the second silica plate 1b side by the joint portion 2 between the peripheral portions. ..

キャビティ１２の高さ（図２及び図３では、上下方向の長さ）は、０．１μｍ～５ｍｍであることが好ましく、０．１μｍ～１ｍｍであることがより好ましい。キャビティ１２は、第１シリカ板１ａ側にのみ凹部を設ける形態、第１シリカ板１ａ側及び第２シリカ板１ｂ側の両方に凹部を設ける形態及び第２シリカ板１ｂ側にのみ凹部を設ける形態の３態様がある。いずれの形態でも、凹部によって、第１シリカ板１ａの周縁部及び／又は第２シリカ板１ｂの周縁部に土手部１１が形成される。図２～図１１、図１８、図１９の形態では、第１シリカ板１ａに形成された土手部１１の天面は、向い合せに配置される第２シリカ板１ｂの平板部分と接合され、周縁部同士の接合部２が形成される。図１２～図１７、図２０、図２１の形態では、第１シリカ板１ａと第２シリカ板１ｂの土手部１１の天面同士が接合され、周縁部同士の接合部２が形成される。また、第２シリカ板１ｂに形成された土手部１１の天面は、向い合せに配置される第１シリカ板１ａの平板部分と接合され、周縁部同士の接合部２が形成されてもよい。凹部は、例えばエッチング法などによって形成することができる。 The height of the cavity 12 (length in the vertical direction in FIGS. 2 and 3) is preferably 0.1 μm to 5 mm, more preferably 0.1 μm to 1 mm. The cavity 12 has a recess provided only on the first silica plate 1a side, a recess provided on both the first silica plate 1a side and the second silica plate 1b side, and a recess provided only on the second silica plate 1b side. There are three modes. In either form, the recesses form a bank portion 11 on the peripheral edge of the first silica plate 1a and / or on the peripheral edge of the second silica plate 1b. In the forms of FIGS. 2 to 11, 18, and 19, the top surface of the bank portion 11 formed on the first silica plate 1a is joined to the flat plate portion of the second silica plate 1b arranged to face each other. A joint portion 2 between peripheral portions is formed. In the forms of FIGS. 12 to 17, 20 and 21, the top surfaces of the bank portions 11 of the first silica plate 1a and the second silica plate 1b are joined to each other to form a joining portion 2 between the peripheral portions. Further, the top surface of the bank portion 11 formed on the second silica plate 1b may be joined to the flat plate portions of the first silica plates 1a arranged facing each other to form a joining portion 2 between the peripheral portions. .. The recess can be formed by, for example, an etching method.

本実施形態に係るシリカ熱反射板１００では、図２及び図３に示すように、第１シリカ板１ａは、周縁部に設けられた土手部１１と土手部１１で取り囲まれてキャビティ１２を構成する凹部とを有し、第２シリカ板１ｂは、平板状であることが好ましい。第１シリカ板１ａのみに凹部を設けることで、シリカ板内にキャビティ１２を簡易な構造で設けることができる。このような形態を有するシリカ熱反射板は、図２及び図３の他、図４～図１１に例示されたシリカ熱反射板１０１～１０４がある。 In the silica heat reflector 100 according to the present embodiment, as shown in FIGS. 2 and 3, the first silica plate 1a is surrounded by a bank portion 11 and a bank portion 11 provided on a peripheral portion to form a cavity 12. It is preferable that the second silica plate 1b has a concave portion and has a flat plate shape. By providing the recess only in the first silica plate 1a, the cavity 12 can be provided in the silica plate with a simple structure. Examples of the silica heat reflector having such a form include the silica heat reflectors 101 to 104 exemplified in FIGS. 4 to 11 in addition to FIGS. 2 and 3.

本実施形態に係るシリカ熱反射板１００では、図２及び図３に示すように、第３シリカ板９は、キャビティ１２内に収容される。反射体５が密閉空間であるキャビティ１２内にあるため、炉内の汚染がさらに抑制され、また、炉からの反応ガスの影響を受けにくくすることができる。さらに、周縁部同士の接合部２に、反射体５に起因する剥がす方向の応力がかかりにくい。 In the silica heat reflector 100 according to the present embodiment, as shown in FIGS. 2 and 3, the third silica plate 9 is housed in the cavity 12. Since the reflector 5 is located in the cavity 12 which is a closed space, the contamination in the furnace can be further suppressed, and the influence of the reaction gas from the furnace can be further suppressed. Further, it is difficult to apply stress in the peeling direction due to the reflector 5 to the joint portion 2 between the peripheral portions.

反射体５を正面に見た第３シリカ板９の形状は、例えば、円形、楕円形、長方形又は正方形であり、円形が好ましい。円形の直径は、例えば、４～４９ｃｍである。第３シリカ板９の輪郭の形状は、キャビティ１２と合同又は相似の形状であることが好ましい。第３シリカ板９の肉厚は０．０１～５ｍｍであることが好ましく、０．１～１．５ｍｍであることがより好ましい。第３シリカ板９は、表裏面が平行関係にある平板であることが好ましい。 The shape of the third silica plate 9 when the reflector 5 is viewed from the front is, for example, a circle, an ellipse, a rectangle, or a square, and a circle is preferable. The circular diameter is, for example, 4-49 cm. The contour shape of the third silica plate 9 is preferably a shape congruent or similar to that of the cavity 12. The wall thickness of the third silica plate 9 is preferably 0.01 to 5 mm, more preferably 0.1 to 1.5 mm. The third silica plate 9 is preferably a flat plate having a parallel relationship between the front and back surfaces.

第３シリカ板９は、結晶性シリカ板又は非晶質シリカ板である形態を包含する。第３シリカ板９の不純物濃度は、１００ｐｐｍ以下、好ましくは９０ｐｐｍ以下である。 The third silica plate 9 includes a form of a crystalline silica plate or an amorphous silica plate. The impurity concentration of the third silica plate 9 is 100 ppm or less, preferably 90 ppm or less.

（第３シリカ板に反射体としての薄膜が形成されている形態）
図２及び図３、又は、図１２及び図１３に示すように、第３シリカ板９は、第２シリカ板１ｂの表面と向かい合わせとなる表面上に反射体５として形成した薄膜を有し、薄膜は、第３シリカ板９の表面側から順に、下地膜３と、反射面を含む表面層としての反射膜４と、を有する積層膜であり、下地膜３は、Ｔａ、Ｍｏ、Ｔｉ、Ｚｒ、Ｎｂ、Ｃｒ、Ｗ、Ｃｏ又はＮｉからなるか、又は、Ｔａ、Ｍｏ、Ｔｉ、Ｚｒ、Ｎｂ、Ｃｒ、Ｗ、Ｃｏ及びＮｉから選ばれる少なくともいずれか１種を含む合金からなり、反射膜４は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ又はＭｏからなるか、又は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ及びＭｏから選ばれる少なくともいずれか１種を含む合金からなり、前記下地膜と前記反射膜とが異なる組成を有していることが好ましい。なお、第２シリカ板１ｂの表面とは、合わせ板の構造の合わせ面側の表面である。図２及び図３では、キャビティ１２を第１シリカ板１ａ側のみに設けた形態を図示し、図１２及び図１３では、キャビティ１２を第１シリカ板１ａ側及び第２シリカ板１ｂ側の両方に設けた形態を図示したが、キャビティ１２を第２シリカ板１ｂ側のみに設けた形態としてもよい（不図示。） (A form in which a thin film as a reflector is formed on the third silica plate)
As shown in FIGS. 2 and 3 or FIGS. 12 and 13, the third silica plate 9 has a thin film formed as a reflector 5 on the surface facing the surface of the second silica plate 1b. The thin film is a laminated film having a base film 3 and a reflective film 4 as a surface layer including a reflective surface in this order from the surface side of the third silica plate 9, and the base film 3 is Ta, Mo, Ti. , Zr, Nb, Cr, W, Co or Ni, or an alloy containing at least one selected from Ta, Mo, Ti, Zr, Nb, Cr, W, Co and Ni, and is reflective. The film 4 is made of an alloy consisting of Ir, Pt, Rh, Ru, Re, Hf or Mo, or an alloy containing at least one selected from Ir, Pt, Rh, Ru, Re, Hf and Mo. It is preferable that the base film and the reflective film have different compositions. The surface of the second silica plate 1b is the surface on the mating surface side of the structure of the mating plate. 2 and 3 show a form in which the cavity 12 is provided only on the first silica plate 1a side, and in FIGS. 12 and 13, the cavity 12 is provided on both the first silica plate 1a side and the second silica plate 1b side. Although the form provided in the above is shown, the cavity 12 may be provided only on the second silica plate 1b side (not shown).

図２及び図３では、第３シリカ板９が第２シリカ板１ｂの表面と向かい合わせとなる表面上に反射体５として形成した薄膜を有する形態を示したが、図４及び図５に示すように、第３シリカ板９が第１シリカ板１ａの表面と向かい合わせとなる表面上に反射体５として形成した薄膜を有する形態であってもよい。なお、第１シリカ板１ａの表面とは、合わせ板の構造の合わせ面側の表面である。第３シリカ板９に積層膜が成膜されることで、反射体５をシリカ板１内に簡易に配置することができ、生産性に優れたシリカ熱反射板とすることができる。図４及び図５では、キャビティ１２を第１シリカ板１ａ側のみに設けた形態を図示したが、キャビティ１２を第１シリカ板１ａ側及び第２シリカ板１ｂ側の両方に設けた形態、又は、キャビティ１２を第２シリカ板１ｂ側のみに設けた形態としてもよい（いずれも不図示。） 2 and 3 show a form in which the third silica plate 9 has a thin film formed as a reflector 5 on the surface facing the surface of the second silica plate 1b, which are shown in FIGS. 4 and 5. As described above, the third silica plate 9 may have a thin film formed as a reflector 5 on the surface facing the surface of the first silica plate 1a. The surface of the first silica plate 1a is the surface of the structure of the laminated plate on the mating surface side. By forming the laminated film on the third silica plate 9, the reflector 5 can be easily arranged in the silica plate 1, and the silica heat reflector having excellent productivity can be obtained. 4 and 5 show a form in which the cavity 12 is provided only on the first silica plate 1a side, but a form in which the cavity 12 is provided on both the first silica plate 1a side and the second silica plate 1b side, or , The cavity 12 may be provided only on the second silica plate 1b side (neither is shown).

また、図６及び図７、又は、図１４及び図１５に示すように、第３シリカ板９が第１シリカ板１ａの表面と向かい合わせとなる表面上及び第２シリカ板１ｂの表面と向かい合わせとなる表面上の両方に反射体５として形成した薄膜を有する形態であってもよい。第３シリカ板９の両面に積層膜が成膜されていると、シリカ熱反射板の表裏を気にすることなく使用することができる。図６及び図７では、キャビティ１２を第１シリカ板１ａ側のみに設けた形態を図示し、図１４及び図１５では、キャビティ１２を第１シリカ板１ａ側及び第２シリカ板１ｂ側の両方に設けた形態を図示したが、キャビティ１２を第２シリカ板１ｂ側のみに設けた形態としてもよい（不図示。） Further, as shown in FIGS. 6 and 7, or 14 and 15, the third silica plate 9 is on the surface facing the surface of the first silica plate 1a and facing the surface of the second silica plate 1b. It may be in the form of having a thin film formed as a reflector 5 on both surfaces to be combined. When the laminated film is formed on both sides of the third silica plate 9, it can be used without worrying about the front and back of the silica heat reflector. 6 and 7 show a form in which the cavity 12 is provided only on the first silica plate 1a side, and in FIGS. 14 and 15, the cavity 12 is provided on both the first silica plate 1a side and the second silica plate 1b side. Although the form provided in the above is shown, the cavity 12 may be provided only on the second silica plate 1b side (not shown).

反射体５が薄膜であり、薄膜が積層膜である場合は、反射体５の少なくとも反射面を含む表面層は、反射膜４に対応する。積層膜である反射体５は、第３シリカ板９の少なくとも一方の表面に形成されている。積層膜である反射体５は、第３シリカ板９の表裏面の一方の面の表面積に対して５０～１００％の面積で形成されていることが好ましく、８０～１００％の面積で形成されていることがより好ましい。反射体５の膜厚は、１０～１５００ｎｍであることが好ましく、２０～４００ｎｍであることがより好ましい。 When the reflector 5 is a thin film and the thin film is a laminated film, the surface layer including at least the reflective surface of the reflector 5 corresponds to the reflective film 4. The reflector 5, which is a laminated film, is formed on at least one surface of the third silica plate 9. The reflector 5 which is a laminated film is preferably formed in an area of 50 to 100% with respect to the surface area of one surface of the front and back surfaces of the third silica plate 9, and is formed in an area of 80 to 100%. Is more preferable. The film thickness of the reflector 5 is preferably 10 to 1500 nm, more preferably 20 to 400 nm.

下地膜３は、Ｔａ、Ｍｏ、Ｔｉ、Ｚｒ、Ｎｂ、Ｃｒ、Ｗ、Ｃｏ又はＮｉからなるか、又は、Ｔａ、Ｍｏ、Ｔｉ、Ｚｒ、Ｎｂ、Ｃｒ、Ｗ、Ｃｏ及びＮｉから選ばれる少なくともいずれか１種を含む合金からなることが好ましい。このような金属又は合金は、融点が高く、かつ、シリカ板との密着性に優れている。下地膜３は、例えば、スパッタ膜、塗布膜、ＣＶＤ、蒸着等で得られる薄膜であることが好ましい。Ｔａ、Ｍｏ、Ｔｉ、Ｚｒ、Ｎｂ、Ｃｒ、Ｗ、Ｃｏ及びＮｉから選ばれる少なくともいずれか１種を含む合金としては、これらの元素のいずれか一種を最多質量にて含む合金であることが好ましく、より好ましくはＴａ、Ｍｏ、Ｔｉ、Ｚｒ、Ｎｂ、Ｃｒ、Ｗ、Ｃｏ又はＮｉを５０質量％以上含有する合金、さらに好ましくは６０質量％以上含有する合金、最も好ましくは７０質量％以上含有する合金であり、例えば、Ｔａ‐Ｍｏ系合金、Ｔａ‐Ｃｒ系合金又はＣｒ‐Ｃｏ系合金である。下地膜３の膜厚は、５～５００ｎｍであることが好ましく、１０～１００ｎｍであることがより好ましい。下地膜３は反射膜４の密着性を向上させる。 The undercoat 3 is made of Ta, Mo, Ti, Zr, Nb, Cr, W, Co or Ni, or at least one selected from Ta, Mo, Ti, Zr, Nb, Cr, W, Co and Ni. It is preferably made of an alloy containing one or more. Such a metal or alloy has a high melting point and is excellent in adhesion to a silica plate. The undercoat film 3 is preferably a thin film obtained by, for example, a sputtering film, a coating film, CVD, vapor deposition, or the like. As the alloy containing at least one selected from Ta, Mo, Ti, Zr, Nb, Cr, W, Co and Ni, it is preferable that the alloy contains any one of these elements in the largest mass. , More preferably an alloy containing 50% by mass or more of Ta, Mo, Ti, Zr, Nb, Cr, W, Co or Ni, still more preferably an alloy containing 60% by mass or more, and most preferably 70% by mass or more. It is an alloy, for example, a Ta-Mo-based alloy, a Ta-Cr-based alloy, or a Cr-Co-based alloy. The film thickness of the base film 3 is preferably 5 to 500 nm, more preferably 10 to 100 nm. The base film 3 improves the adhesion of the reflective film 4.

反射膜４は下地膜３の表面に堆積していることが好ましい。反射膜４は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ又はＭｏからなるか、又は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ及びＭｏから選ばれる少なくともいずれか１種を含む合金からなることが好ましい。このような金属又は合金は、融点が高く、かつ、赤外線の反射率が高い。また下地膜３との反応性が少ない。反射膜４は、例えば、スパッタ膜、塗布膜、ＣＶＤ、蒸着等で得られる薄膜であることが好ましい。Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ及びＭｏから選ばれる少なくともいずれか１種を含む合金としては、これらの元素のいずれか一種を最多質量にて含む合金であることが好ましく、より好ましくはＩｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ又はＭｏを５０質量％以上含有する合金、さらに好ましくは６０質量％以上含有する合金、最も好ましくは７０質量％以上含有する合金であり、例えば、Ｉｒ‐Ｐｔ系合金、Ｉｒ‐Ｒｈ系合金又はＰｔ‐Ｒｕ系合金である。反射膜４の膜厚は、５～１０００ｎｍであることが好ましく、１０～３００ｎｍであることがより好ましい。 The reflective film 4 is preferably deposited on the surface of the base film 3. The reflective film 4 is made of Ir, Pt, Rh, Ru, Re, Hf or Mo, or an alloy containing at least one selected from Ir, Pt, Rh, Ru, Re, Hf and Mo. Is preferable. Such metals or alloys have a high melting point and high infrared reflectance. Moreover, the reactivity with the base film 3 is low. The reflective film 4 is preferably a thin film obtained by, for example, a sputtering film, a coating film, CVD, vapor deposition, or the like. As the alloy containing at least one selected from Ir, Pt, Rh, Ru, Re, Hf and Mo, it is preferable that the alloy contains any one of these elements in the largest mass, and more preferably. An alloy containing 50% by mass or more of Ir, Pt, Rh, Ru, Re, Hf or Mo, more preferably an alloy containing 60% by mass or more, and most preferably an alloy containing 70% by mass or more, for example, Ir-. It is a Pt-based alloy, an Ir-Rh-based alloy, or a Pt-Ru-based alloy. The film thickness of the reflective film 4 is preferably 5 to 1000 nm, more preferably 10 to 300 nm.

積層膜としたときの下地膜３と反射膜４の好適な組み合わせとしては、下地膜３／反射膜４は、Ｔａ膜／Ｉｒ膜、Ｍｏ膜／Ｉｒ膜などである。積層膜の膜厚は、１０～１５００ｎｍであることが好ましく、２０～４００ｎｍであることがより好ましい。 As a suitable combination of the base film 3 and the reflective film 4 when formed as a laminated film, the base film 3 / reflective film 4 is a Ta film / Ir film, a Mo film / Ir film, or the like. The film thickness of the laminated film is preferably 10 to 1500 nm, more preferably 20 to 400 nm.

（第１シリカ板又は第２シリカ板に反射体としての薄膜が形成されている形態）
本実施形態に係るシリカ熱反射板１０４，１０７では、図１０及び図１１、又は、図１６及び図１７に示すように、第１シリカ板１ａのキャビティ１２内の表面上に反射体５として形成した薄膜を有し、薄膜は、第１シリカ板１ａのキャビティ１２内の表面側から順に、下地膜３と、反射面を含む表面層としての反射膜４と、を有する積層膜であり、下地膜３は、Ｔａ、Ｍｏ、Ｔｉ、Ｚｒ、Ｎｂ、Ｃｒ、Ｗ、Ｃｏ又はＮｉからなるか、又は、Ｔａ、Ｍｏ、Ｔｉ、Ｚｒ、Ｎｂ、Ｃｒ、Ｗ、Ｃｏ及びＮｉから選ばれる少なくともいずれか１種を含む合金からなり、反射膜４は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ又はＭｏからなるか、又は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ及びＭｏから選ばれる少なくともいずれか１種を含む合金からなり、前記下地膜と前記反射膜とが異なる組成を有していることが好ましい。第１シリカ板のキャビティ内の表面上に反射体を形成しているため、薄膜周縁からの膜の腐食及び膜の剥がれが生じにくい。 (A form in which a thin film as a reflector is formed on the first silica plate or the second silica plate)
In the silica heat reflecting plates 104 and 107 according to the present embodiment, as shown in FIGS. 10 and 11, or FIGS. 16 and 17, the first silica plate 1a is formed as a reflector 5 on the surface in the cavity 12. The thin film is a laminated film having a base film 3 and a reflective film 4 as a surface layer including a reflective surface in order from the surface side in the cavity 12 of the first silica plate 1a. The ground film 3 is made of Ta, Mo, Ti, Zr, Nb, Cr, W, Co or Ni, or at least one selected from Ta, Mo, Ti, Zr, Nb, Cr, W, Co and Ni. The reflective film 4 is made of an alloy containing one kind, and the reflective film 4 is made of Ir, Pt, Rh, Ru, Re, Hf or Mo, or at least one selected from Ir, Pt, Rh, Ru, Re, Hf and Mo. It is preferable that the base film and the reflective film have different compositions because they are made of an alloy containing one of the above. Since the reflector is formed on the surface of the cavity of the first silica plate, corrosion of the film and peeling of the film from the peripheral edge of the thin film are unlikely to occur.

図１０及び図１１では、第１シリカ板１ａが凹部を有し、第２シリカ板１ｂが平板であり、キャビティ１２が、第１シリカ板１ａ側のみに形成されている形態を示した。また、図１６及び図１７では、第１シリカ板１ａ及び第２シリカ板１ｂが凹部を有し、キャビティ１２が、第１シリカ板１ａ側と第２シリカ板１ｂ側の両側にわたって形成されている形態を示した。 10 and 11 show a form in which the first silica plate 1a has a recess, the second silica plate 1b is a flat plate, and the cavity 12 is formed only on the first silica plate 1a side. Further, in FIGS. 16 and 17, the first silica plate 1a and the second silica plate 1b have recesses, and the cavity 12 is formed on both sides of the first silica plate 1a side and the second silica plate 1b side. The morphology was shown.

図１０及び図１１、又は、図１６及び図１７では、第１シリカ板１ａのキャビティ１２内の表面上に反射体５として薄膜を形成した形態を示したが、図８及び図９に示すように、キャビティ１２内の第２シリカ板１ｂの表面上に反射体５として薄膜を形成してもよい。この形態では、平板状の第２シリカ板１ｂの表面上に反射体を形成しているため、薄膜の形成が容易であり、生産性に優れる。 10 and 11 or FIGS. 16 and 17 show a form in which a thin film is formed as a reflector 5 on the surface of the cavity 12 of the first silica plate 1a, as shown in FIGS. 8 and 9. In addition, a thin film may be formed as a reflector 5 on the surface of the second silica plate 1b in the cavity 12. In this form, since the reflector is formed on the surface of the flat plate-shaped second silica plate 1b, it is easy to form a thin film and the productivity is excellent.

本実施形態では、反射体５としての薄膜は、キャビティ１２内の第１シリカ板１ａの表面上及び第２シリカ板１ｂの表面上の両方に形成すべきではない。両方に反射体５としての薄膜を形成すると、シリカ熱反射板の表面及び裏面の両方ともに下地膜３側が外側に配置されるため、反射率を高めることが難しい場合がある。 In this embodiment, the thin film as the reflector 5 should not be formed on both the surface of the first silica plate 1a and the surface of the second silica plate 1b in the cavity 12. When a thin film as the reflector 5 is formed on both of them, it may be difficult to increase the reflectance because the base film 3 side is arranged on both the front surface and the back surface of the silica heat reflector.

第１シリカ板又は第２シリカ板に反射体としての薄膜が形成されている形態において、反射体５としての薄膜については、第３シリカ板に反射体としての薄膜が形成されている形態の反射体と同様である。 In the form in which a thin film as a reflector is formed on the first silica plate or the second silica plate, the thin film as the reflector 5 is a reflection in the form in which the thin film as a reflector is formed on the third silica plate. Similar to the body.

［反射体としての板が中板と共にキャビティに配置されている形態］
本実施形態に係るシリカ熱反射板１０８では、図１８及び図１９に示すように、キャビティ１２内の、第１シリカ板１ａの表面と第３シリカ板９の表面とに挟まれる位置及び第２シリカ板１ｂの表面と第３シリカ板９の表面とに挟まれる位置の両方に、反射体８がそれぞれ配置されており、反射体８が、板であり、かつ、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ又はＭｏからなるか、又は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ及びＭｏから選ばれる少なくともいずれか１種を含む合金からなることが好ましい。なお、第１シリカ板１ａの表面とは、合わせ板の構造の合わせ面側の表面である。第２シリカ板１ｂの表面とは、合わせ板の構造の合わせ面側の表面である。キャビティ１２内に反射体８としての板が収容された状態となっており、板の腐食が生じにくい。さらに、周縁部同士の接合部２に、板に起因する剥がす方向の応力がかかりにくい。 [A form in which a plate as a reflector is placed in the cavity together with the middle plate]
In the silica heat reflecting plate 108 according to the present embodiment, as shown in FIGS. 18 and 19, the position and the second in the cavity 12 sandwiched between the surface of the first silica plate 1a and the surface of the third silica plate 9. The reflector 8 is arranged at both the positions sandwiched between the surface of the silica plate 1b and the surface of the third silica plate 9, and the reflector 8 is a plate and is Ir, Pt, Rh, Ru. , Re, Hf or Mo, or preferably an alloy containing at least one selected from Ir, Pt, Rh, Ru, Re, Hf and Mo. The surface of the first silica plate 1a is the surface of the structure of the laminated plate on the mating surface side. The surface of the second silica plate 1b is the surface of the structure of the laminated plate on the mating surface side. A plate as a reflector 8 is housed in the cavity 12, and corrosion of the plate is unlikely to occur. Further, it is difficult to apply stress in the peeling direction due to the plate to the joint portion 2 between the peripheral portions.

図１８及び図１９では、反射体８が、キャビティ１２内の、第１シリカ板１ａの表面と第３シリカ板９の表面とに挟まれる位置及び第２シリカ板１ｂの表面と第３シリカ板９の表面とに挟まれる位置の両方にそれぞれ配置された形態を示したが、キャビティ１２内の、第１シリカ板１ａの表面と第３シリカ板９の表面とに挟まれる位置だけに配置された形態又は第２シリカ板１ｂの表面と第３シリカ板９の表面とに挟まれる位置だけに配置された形態であってもよい。 In FIGS. 18 and 19, the reflector 8 is sandwiched between the surface of the first silica plate 1a and the surface of the third silica plate 9 in the cavity 12, and the surface of the second silica plate 1b and the third silica plate. Although the morphology shown to be arranged at both the positions sandwiched between the surface of 9 and the surface of 9, it is arranged only at the position sandwiched between the surface of the first silica plate 1a and the surface of the third silica plate 9 in the cavity 12. Or the form may be arranged only at a position sandwiched between the surface of the second silica plate 1b and the surface of the third silica plate 9.

図１８及び図１９では、キャビティ１２を第１シリカ板１ａ側のみに設けた形態を図示したが、図２０及び図２１に示すように、キャビティ１２を第１シリカ板１ａ側及び第２シリカ板１ｂ側の両方に設けた形態であってもよい。さらに、キャビティ１２を第２シリカ板１ｂ側のみに設けた形態としてもよい（不図示。） 18 and 19 show a form in which the cavity 12 is provided only on the first silica plate 1a side, but as shown in FIGS. 20 and 21, the cavity 12 is provided on the first silica plate 1a side and the second silica plate. It may be provided on both sides of 1b. Further, the cavity 12 may be provided only on the second silica plate 1b side (not shown).

板である反射体８は、凹部の底面の全面積に対して５０～１００％の面積で形成されていることが好ましく、８０～１００％の面積で形成されていることがより好ましい。 The reflector 8 which is a plate is preferably formed in an area of 50 to 100% with respect to the total area of the bottom surface of the recess, and more preferably formed in an area of 80 to 100%.

［反射体としての箔が中板と共にキャビティに配置されている形態］
反射体としての板が中板と共にキャビティに配置されている形態において、板の代わりに箔を配置してもよい。箔は、複数の破片を重ねて反射面積を確保してもよい。 [A form in which the foil as a reflector is placed in the cavity together with the middle plate]
In the form in which the plate as a reflector is arranged in the cavity together with the middle plate, the foil may be arranged instead of the plate. The foil may be made by stacking a plurality of fragments to secure a reflection area.

反射体が薄膜、板又は箔のいずれの形態においても、本実施形態に係るシリカ熱反射板１００～１０９では、第１シリカ板及び第２シリカ板は、第３シリカ板に対して肉厚方向に圧縮応力をかけていることが好ましい。反射体の表面を、対向する第１シリカ板、第２シリカ板又は第３シリカ板に密着させることができ、反射膜とシリカ板が部分的に接触することで発生する干渉縞をより抑制することができる。また、昇降温に伴う反射膜の剥離を物理的に抑制することができ、反射板を長持ちさせることができる。圧縮応力は、例えば、第３シリカ板の厚さをキャビティの厚さよりも厚くすることで、発生させることができる。キャビティの厚さに対して、第３シリカ板の厚さを１００％超１０１％以下とすることが好ましく、１００％超１００．０２％以下とすることがより好ましい。なお、本実施形態では、上記の圧縮応力がかかっていない形態も包含する。このような形態としては、例えば、キャビティの高さ（キャビティの底面から天面までの距離、例えば図２で説明すると上下方向の長さ）から第３シリカ板の厚さと反射体の厚さの合計厚さを差し引いた値、すなわちキャビティ内の高さ方向の隙間がある形態である。この隙間は２００μｍ以下であることが好ましく、１００μｍ以下であることがより好ましい。キャビティ内の高さ方向の隙間が２００μｍを超えると、大気圧によるシリカ板の変形が大きくなり、その結果、接合部付近に掛かる応力が大きくなり、結合部の割れが生じるおそれがある。 Regardless of whether the reflector is a thin film, a plate, or a foil, in the silica heat reflecting plates 100 to 109 according to the present embodiment, the first silica plate and the second silica plate are in the thickness direction with respect to the third silica plate. It is preferable to apply compressive stress to the silica. The surface of the reflector can be brought into close contact with the facing first silica plate, second silica plate or third silica plate, and the interference fringes generated by the partial contact between the reflective film and the silica plate can be further suppressed. be able to. In addition, the peeling of the reflective film due to the temperature rise and fall can be physically suppressed, and the reflector can be made to last for a long time. The compressive stress can be generated, for example, by making the thickness of the third silica plate larger than the thickness of the cavity. The thickness of the third silica plate is preferably more than 100% and 101% or less, and more preferably more than 100% and 100.02% or less with respect to the thickness of the cavity. In this embodiment, the above-mentioned form in which the compressive stress is not applied is also included. As such a form, for example, from the height of the cavity (distance from the bottom surface of the cavity to the top surface, for example, the length in the vertical direction as described in FIG. 2), the thickness of the third silica plate and the thickness of the reflector. It is a form in which there is a value obtained by subtracting the total thickness, that is, a gap in the height direction in the cavity. This gap is preferably 200 μm or less, and more preferably 100 μm or less. If the gap in the height direction in the cavity exceeds 200 μm, the deformation of the silica plate due to atmospheric pressure becomes large, and as a result, the stress applied in the vicinity of the joint portion becomes large, and the joint portion may be cracked.

［反射体として形成した薄膜がＭｏ膜又はＭｏを含む合金膜である形態１］
本実施形態に係るシリカ熱反射板では、前記第３シリカ板は、前記第１シリカ板の表面と向かい合わせとなる表面又は前記第２シリカ板の表面と向かい合わせとなる表面のうち少なくとも一方の表面上に前記反射体として形成した薄膜を有し、該薄膜は、Ｍｏ膜又はＭｏを５０質量％以上含む合金膜であることが好ましい。Ｍｏ膜又はＭｏを５０質量％以上含む合金膜であるときは、反射体として形成した薄膜が単層膜であってもよい。本実施形態に係るシリカ熱反射板は、図２、図４、図６、図１２又は図１４において、積層膜である反射体５をＭｏ膜又はＭｏを５０質量％以上含む合金膜に置換した構造を有する。なお、本実施形態に係るシリカ熱反射板の赤外線の入射方向は、上から下に向かう方向又は下から上に向かう方向のいずれでもよい。 [Form 1 in which the thin film formed as a reflector is a Mo film or an alloy film containing Mo]
In the silica heat reflecting plate according to the present embodiment, the third silica plate is at least one of a surface facing the surface of the first silica plate or a surface facing the surface of the second silica plate. It has a thin film formed as the reflector on the surface, and the thin film is preferably a Mo film or an alloy film containing 50% by mass or more of Mo. When the Mo film or the alloy film containing 50% by mass or more of Mo is used, the thin film formed as a reflector may be a single-layer film. In the silica heat reflector according to the present embodiment, in FIGS. 2, 4, 6, 12, or 14, the reflector 5 which is a laminated film is replaced with a Mo film or an alloy film containing 50% by mass or more of Mo. Has a structure. The direction of incident infrared rays of the silica heat reflector according to the present embodiment may be either a direction from top to bottom or a direction from bottom to top.

［反射体として形成した薄膜がＭｏ膜又はＭｏを含む合金膜である形態２］
本実施形態に係るシリカ熱反射板では、前記第１シリカ板の前記キャビティ内の表面上又は前記第２シリカ板の前記キャビティ内の表面上に前記反射体として形成した薄膜を有し、該薄膜は、Ｍｏ膜又はＭｏを５０質量％以上含む合金膜であることが好ましい。Ｍｏ膜又はＭｏを５０質量％以上含む合金膜であるときは、反射体として形成した薄膜が単層膜であってもよい。本実施形態に係るシリカ熱反射板は、図８、図１０又は図１６において、積層膜である反射体５をＭｏ膜又はＭｏを５０質量％以上含む合金膜に置換した構造を有する。なお、本実施形態に係るシリカ熱反射板の赤外線の入射方向は、上から下に向かう方向又は下から上に向かう方向のいずれでもよい。 [Form 2 in which the thin film formed as a reflector is a Mo film or an alloy film containing Mo]
The silica heat reflecting plate according to the present embodiment has a thin film formed as the reflector on the surface of the first silica plate in the cavity or on the surface of the second silica plate in the cavity, and the thin film is formed. Is preferably a Mo film or an alloy film containing 50% by mass or more of Mo. When the Mo film or the alloy film containing 50% by mass or more of Mo is used, the thin film formed as a reflector may be a single-layer film. The silica heat reflector according to the present embodiment has a structure in which the reflector 5 which is a laminated film is replaced with a Mo film or an alloy film containing 50% by mass or more of Mo in FIGS. 8, 10 or 16. The direction of incident infrared rays of the silica heat reflector according to the present embodiment may be either a direction from top to bottom or a direction from bottom to top.

本実施形態に係るシリカ熱反射板１００～１０９では、反射体の厚さは、０．０１μｍ以上５ｍｍ以下であることが好ましく、０．０２μｍ以上２ｍｍ以下であることがより好ましい。反射体による高い反射効率を保持しつつ、シリカ熱反射板１００～１０９の熱容量を小さくすることができる。反射体の厚さが０．０１μｍ未満であると反射効率の保持が難しくなり、５ｍｍを超えると反射体の熱量が大きくなりすぎる場合がある。そして、反射体が薄膜である場合、積層膜の膜厚は１０ｎｍ以上１５００ｎｍ以下であることが好ましく、２０ｎｍ以上４００ｎｍ以下であることがより好ましい。反射体が板である場合、板厚は０．５ｍｍ以上５．０ｍｍ以下であることが好ましく、０．５ｍｍ以上２．０ｍｍ以下であることがより好ましい。反射体が箔である場合、箔の厚さは３μｍ以上２．０ｍｍ以下であることが好ましく、８μｍ以上１．０ｍｍ以下であることがより好ましい。 In the silica heat reflectors 100 to 109 according to the present embodiment, the thickness of the reflector is preferably 0.01 μm or more and 5 mm or less, and more preferably 0.02 μm or more and 2 mm or less. The heat capacity of the silica heat reflectors 100 to 109 can be reduced while maintaining high reflection efficiency by the reflector. If the thickness of the reflector is less than 0.01 μm, it becomes difficult to maintain the reflection efficiency, and if it exceeds 5 mm, the amount of heat of the reflector may become too large. When the reflector is a thin film, the film thickness of the laminated film is preferably 10 nm or more and 1500 nm or less, and more preferably 20 nm or more and 400 nm or less. When the reflector is a plate, the plate thickness is preferably 0.5 mm or more and 5.0 mm or less, and more preferably 0.5 mm or more and 2.0 mm or less. When the reflector is a foil, the thickness of the foil is preferably 3 μm or more and 2.0 mm or less, and more preferably 8 μm or more and 1.0 mm or less.

本実施形態に係るシリカ熱反射板１００～１０９では、周縁部同士の接合部２は、表面活性化接合部であることが好ましい。比較的低温での接合が可能な為、反射膜に熱的、物理的ダメージが無く接合することが可能であり、また、内部を真空に保ったまま接合することで接合部における接合強度が高められており、シリカ熱反射板１００～１０９はより長寿命となり、また耐食性が高まり、炉内の汚染が抑制される。表面活性化接合部とは、接合し合う部位の少なくとも一方を表面活性化状態とした後、接合部位同士を、押圧をかけて合わせることにより原子レベルで表面組織を一体化して接合した部位をいう。接合し合う部位の両方を表面活性化状態とした後、接合部位同士を、押圧をかけて合わせることがより好ましい。シリカ板同士の接合では、シリコン皮膜を製膜した後、表面活性化状態とし、その後、接合部位同士を、押圧をかけて合わせることとしてもよい。表面活性化接合部には、常温活性化接合部とプラズマ活性化接合部とがある。常温活性化接合部には、例えば、高速原子ビームを用いて表面活性化して接合した接合部、Ｓｉ等の活性金属を用いてナノ密着層を形成して表面活性化して接合した接合部、イオンビームを用いて表面活性化して接合した接合部がある。プラズマ活性化接合部には、例えば、酸素プラズマを用いて表面活性化して接合した接合部、窒素プラズマを用いて表面活性化して接合した接合部がある。周縁部同士の接合部２を表面活性化接合部とすることで、接合部におけるリークを低減でき、例えば、キャビティ内を真空に保つことで高温時の内圧上昇によるシリカ板の破損を防ぐことができる。表面活性化接合部を形成する方法については、例えば、特許文献４～６を参照できる。 In the silica heat reflectors 100 to 109 according to the present embodiment, it is preferable that the joint portion 2 between the peripheral portions is a surface-activated joint portion. Since it is possible to join at a relatively low temperature, it is possible to join without thermal or physical damage to the reflective film, and by joining while keeping the inside vacuum, the joining strength at the joint is increased. The silica heat reflectors 100 to 109 have a longer life, are more corrosion resistant, and are less likely to contaminate the inside of the furnace. The surface-activated joint portion refers to a portion where at least one of the parts to be joined is brought into a surface-activated state, and then the joint parts are combined by applying pressure to integrate and join the surface structures at the atomic level. .. It is more preferable that after both of the parts to be joined are brought into a surface-activated state, the parts to be joined are pressed against each other. In the bonding between silica plates, after forming a silicon film, the surface may be activated, and then the bonding portions may be pressed against each other. The surface-activated joint portion includes a room temperature-activated joint portion and a plasma-activated joint portion. The room temperature activated joints include, for example, a joint that is surface-activated using a high-speed atomic beam and bonded, a joint that forms a nano-adhesive layer using an active metal such as Si and is surface-activated and bonded, and ions. There are joints that are surface activated and joined using a beam. The plasma-activated junction includes, for example, a junction that is surface-activated and bonded using oxygen plasma, and a junction that is surface-activated and bonded using nitrogen plasma. By using the joint portion 2 between the peripheral portions as a surface-activated joint portion, leakage at the joint portion can be reduced. For example, by keeping the inside of the cavity in a vacuum, damage to the silica plate due to an increase in internal pressure at high temperature can be prevented. can. For a method of forming a surface-activated joint, for example, Patent Documents 4 to 6 can be referred to.

本実施形態に係るシリカ熱反射板１００～１０９では、キャビティ１２内の圧力は、大気圧未満の減圧となっていることが好ましい。キャビティ１２内の圧力は、１０－２Ｐａ以下であることがより好ましい。熱処理時にキャビティ１２の内圧が高まることを抑制することができ、炉内の汚染をより抑制することができる。また、高温時の反射膜の劣化を抑制できる。 In the silica heat reflectors 100 to 109 according to the present embodiment, the pressure in the cavity 12 is preferably reduced to less than atmospheric pressure. The pressure in the cavity 12 is more preferably 10-2 Pa or less. It is possible to suppress the increase in the internal pressure of the cavity 12 during the heat treatment, and it is possible to further suppress the contamination in the furnace. In addition, deterioration of the reflective film at high temperatures can be suppressed.

図２、図１０、図１２及び図１６においては、赤外線の入射方向は上から下に向かう方向である。図４及び図８においては、赤外線の入射方向は下から上に向かう方向である。図６、図１４、図１８及び図２０においては、赤外線の入射方向は上から下に向かう方向又は下から上に向かう方向のいずれでもよい。 In FIGS. 2, 10, 12, and 16, the infrared incident direction is from top to bottom. In FIGS. 4 and 8, the infrared incident direction is from the bottom to the top. In FIGS. 6, 14, 18 and 20, the infrared incident direction may be either from top to bottom or from bottom to top.

以下、実施例を示しながら本発明についてさらに詳細に説明するが、本発明は実施例に限定して解釈されない。 Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not construed as being limited to the examples.

（実施例１）
図１０に示したシリカ熱反射板を作製する。まず、外周３００ｍｍ、厚み１．２ｍｍのシリカ板２枚を準備し、それぞれ第１シリカ板、第２シリカ板とした。また、外周２８４．５ｍｍ、厚み０．３ｍｍのシリカ板を1枚準備し、第３シリカ板とした。次に、第１シリカ板の外周から幅７．７５ｍｍを第２シリカ板との接合部として残し、それ以外の箇所についてはエッチングを行い、深さ１μｍのキャビティのための凹部を設けた。次に、第１シリカ板の凹部の底面に下地膜としてＴａをスパッタリング法によって５０ｎｍ成膜し、下地膜の上に反射膜としてＩｒをスパッタリング法によって１５０ｎｍ成膜し、反射体を形成した。次に、紫外可視分光光度計（(株)島津製作所製 型式：ＵＶ－３１００ＰＣ）を用いて反射体の反射率を測定した。測定した結果を図２２に示す。測定は、反射体の表面に測定のための光を直接当てて行った。また、（数１）を用いて１０００℃における物質が放射する黒体放射の波長と放射量の関係を算出した。算出結果を図２３に示す。

Figure 2022104503000002
但し、ｈはプランク定数（６．６２６０７０１５×１０－３４Ｊ・ｓ）、ｋＢはボルツマン定数（１．３８０６４９×１０－２３Ｊ／Ｋ）、ｃは光速度（２９９７９２４５８ｍ／ｓ）、λは波長（ｎｍ）である。図２３の結果、１０００℃において輻射熱を反射することが必要であり、波長が２０００ｎｍ～２６００ｎｍで放射量が多いことが確認できる。また、図２２の結果、１０００℃のときに本実施例における反射体では２０００ｎｍ以上の波長において９０％以上の反射率を有することが確認できた。次に、反射体を形成した第１シリカ板の凹部に第３シリカ板を設置し、第３シリカ板を第１シリカ板の凹部に設置した状態を保ちながら第１シリカ板と平板状の第２シリカ板を接合するために、真空度１０－２Ｐａ以下の真空中で、高速原子ビームを第１シリカ板の接合部に照射して表面活性化し、第１シリカ板に第２シリカ板を押し付けることでシリカ熱反射板を作製した。 (Example 1)
The silica heat reflector shown in FIG. 10 is manufactured. First, two silica plates having an outer circumference of 300 mm and a thickness of 1.2 mm were prepared and used as a first silica plate and a second silica plate, respectively. Further, one silica plate having an outer circumference of 284.5 mm and a thickness of 0.3 mm was prepared and used as a third silica plate. Next, a width of 7.75 mm from the outer periphery of the first silica plate was left as a joint with the second silica plate, and etching was performed on the other parts to provide a recess for a cavity having a depth of 1 μm. Next, Ta was formed on the bottom surface of the recess of the first silica plate as a base film by a sputtering method at 50 nm, and Ir was formed on the base film by a sputtering method at 150 nm to form a reflector. Next, the reflectance of the reflector was measured using an ultraviolet visible spectrophotometer (model: UV-3100PC manufactured by Shimadzu Corporation). The measurement results are shown in FIG. The measurement was performed by shining light for measurement directly on the surface of the reflector. In addition, (Equation 1) was used to calculate the relationship between the wavelength of blackbody radiation emitted by a substance at 1000 ° C. and the amount of radiation. The calculation result is shown in FIG.
Figure 2022104503000002
 However, h is Planck's constant (6.626070115 × 10 −34 J · s), k B is Boltzmann constant (1.380649 × 10-23 J / K), c is optical velocity (299792458 m / s), and λ is wavelength. (Nm). As a result of FIG. 23, it is necessary to reflect radiant heat at 1000 ° C., and it can be confirmed that the wavelength is 2000 nm to 2600 nm and the amount of radiation is large. Further, as a result of FIG. 22, it was confirmed that the reflector in this example had a reflectance of 90% or more at a wavelength of 2000 nm or more at 1000 ° C. Next, the third silica plate is installed in the recess of the first silica plate on which the reflector is formed, and the first silica plate and the flat plate-shaped first are maintained while the third silica plate is installed in the recess of the first silica plate. 2 In order to join the silica plates, a high-speed atomic beam is applied to the joint portion of the first silica plate to activate the surface in a vacuum with a vacuum degree of 10-2 Pa or less, and the second silica plate is attached to the first silica plate. A silica heat reflector was produced by pressing.

（実施例２）
図１０に示したシリカ熱反射板の変形例として、第１シリカ板１ａの凹部の底面に下地膜３を成膜せずに、直接、Ｍｏ膜を成膜したシリカ熱反射板を作製する。まず、外周３００ｍｍ、厚み１．２ｍｍのシリカ板２枚を準備し、それぞれ第１シリカ板、第２シリカ板とした。また、外周２８４．５ｍｍ、厚み０．３ｍｍのシリカ板を1枚準備し、第３シリカ板とした。次に、第１シリカ板の外周から幅７．７５ｍｍを第２シリカ板との接合部として残し、それ以外の箇所についてはエッチングを行い、深さ１μｍのキャビティのための凹部を設けた。次に、第１シリカ板の凹部の底面にＭｏをスパッタリング法によって２００ｎｍ成膜し、反射体を形成した。次に、紫外可視分光光度計（(株)島津製作所製 型式：ＵＶ－３１００ＰＣ）を用いて反射体の反射率を測定した。測定した結果を図２４に示す。測定は、反射体の表面に測定のための光を直接当てて行った。また、図２４の結果、１０００℃のときに本実施例における反射体では２０００ｎｍ以上の波長において８０％以上の反射率を有することが確認できた。次に、反射体を形成した第１シリカ板の凹部に第３シリカ板を設置し、第３シリカ板を第１シリカ板の凹部に設置した状態を保ちながら第１シリカ板と平板状の第２シリカ板を接合するために、真空度１０－２Ｐａ以下の真空中で、高速原子ビームを第１シリカ板の接合部に照射して表面活性化し、第１シリカ板に第２シリカ板を押し付けることでシリカ熱反射板を作製した。 (Example 2)
As a modification of the silica heat reflector shown in FIG. 10, a silica heat reflector having a Mo film formed directly is produced without forming a base film 3 on the bottom surface of the recess of the first silica plate 1a. First, two silica plates having an outer circumference of 300 mm and a thickness of 1.2 mm were prepared and used as a first silica plate and a second silica plate, respectively. Further, one silica plate having an outer circumference of 284.5 mm and a thickness of 0.3 mm was prepared and used as a third silica plate. Next, a width of 7.75 mm from the outer periphery of the first silica plate was left as a joint with the second silica plate, and etching was performed on the other parts to provide a recess for a cavity having a depth of 1 μm. Next, Mo was formed into a film of 200 nm on the bottom surface of the recess of the first silica plate by a sputtering method to form a reflector. Next, the reflectance of the reflector was measured using an ultraviolet visible spectrophotometer (model: UV-3100PC manufactured by Shimadzu Corporation). The measurement results are shown in FIG. The measurement was performed by shining light for measurement directly on the surface of the reflector. Further, as a result of FIG. 24, it was confirmed that the reflector in this example had a reflectance of 80% or more at a wavelength of 2000 nm or more at 1000 ° C. Next, the third silica plate is installed in the recess of the first silica plate on which the reflector is formed, and the first silica plate and the flat plate-shaped first are maintained while the third silica plate is installed in the recess of the first silica plate. 2 In order to join the silica plates, a high-speed atomic beam is applied to the joint portion of the first silica plate to activate the surface in a vacuum with a vacuum degree of 10-2 Pa or less, and the second silica plate is attached to the first silica plate. A silica heat reflector was produced by pressing.

（実施例３）
（反射体がＰｔ箔である形態）
図１８に示したシリカ熱反射板の変形例として、第２シリカ板１ｂと第３シリカ板９との間には反射体としてＰｔ箔を配置せず、第１シリカ板１ａと第３シリカ板９との間にのみＰｔ箔を配置したシリカ熱反射板を作製する。まず、外周３００ｍｍ、厚み１．２ｍｍのシリカ板２枚を準備し、それぞれ第１シリカ板、第２シリカ板とした。また、外周２８４．５ｍｍ、厚み０．３ｍｍのシリカ板を１枚準備し、第３シリカ板とした。次に、第１シリカ板の外周から幅７．７５ｍｍを第２シリカ板との接合部として残し、それ以外の箇所については切削加工を行い、深さ０．５ｍｍのキャビティのための凹部を設けた。次に、第１シリカ板の凹部の底面に、外周２８４ｍｍ、厚み１００μｍのＰｔ箔を配置し、反射体を形成した。次に、紫外可視分光光度計（(株)島津製作所製 型式：ＵＶ－３１００ＰＣ）を用いて反射体の反射率を測定した。測定した結果を図２５に示す。測定は、反射体の表面に測定のための光を直接当てて行った。また、図２５の結果、１０００℃のときに本実施例における反射体では２０００ｎｍ以上の波長において８０％以上の反射率を有することが確認できた。次に、反射体を配置した第１シリカ板の凹部に第３シリカ板を設置し、第３シリカ板を第１シリカ板の凹部に設置した状態を保ちながら第１シリカ板と平板状の第２シリカ板を接合するために、真空度１０－２Ｐａ以下の真空中で、高速原子ビームを第１シリカ板の接合部に照射して表面活性化し、第１シリカ板に第２シリカ板を押し付けることでシリカ熱反射板を作製した。 (Example 3)
(The form in which the reflector is Pt foil)
As a modification of the silica heat reflecting plate shown in FIG. 18, a Pt foil is not arranged as a reflector between the second silica plate 1b and the third silica plate 9, and the first silica plate 1a and the third silica plate are not arranged. A silica heat reflecting plate in which a Pt foil is arranged only between 9 and 9 is produced. First, two silica plates having an outer circumference of 300 mm and a thickness of 1.2 mm were prepared and used as a first silica plate and a second silica plate, respectively. Further, one silica plate having an outer circumference of 284.5 mm and a thickness of 0.3 mm was prepared and used as a third silica plate. Next, a width of 7.75 mm from the outer periphery of the first silica plate is left as a joint with the second silica plate, and the other parts are machined to provide a recess for a cavity having a depth of 0.5 mm. rice field. Next, a Pt foil having an outer circumference of 284 mm and a thickness of 100 μm was placed on the bottom surface of the recess of the first silica plate to form a reflector. Next, the reflectance of the reflector was measured using an ultraviolet visible spectrophotometer (model: UV-3100PC manufactured by Shimadzu Corporation). The measurement results are shown in FIG. The measurement was performed by shining light for measurement directly on the surface of the reflector. Further, as a result of FIG. 25, it was confirmed that the reflector in this example had a reflectance of 80% or more at a wavelength of 2000 nm or more at 1000 ° C. Next, the third silica plate is installed in the recess of the first silica plate on which the reflector is arranged, and the first silica plate and the flat plate-shaped first are maintained while the third silica plate is installed in the recess of the first silica plate. 2 In order to join the silica plates, a high-speed atomic beam is applied to the joint portion of the first silica plate to activate the surface in a vacuum with a vacuum degree of 10-2 Pa or less, and the second silica plate is attached to the first silica plate. A silica heat reflector was produced by pressing.

１００～１０９ シリカ熱反射板
１ シリカ板
１ａ 第１シリカ板
１ｂ 第２シリカ板
２ 周縁部同士の接合部
３ 下地膜
４ 反射膜
５ 反射体
６ 支柱部
７ 支柱部を含む接合部
８ 反射体
９ 第３シリカ板
１１ 土手部
１２ キャビティ

100-109 Silica heat reflector 1 Silica plate 1a 1st silica plate 1b 2nd silica plate 2 Bonding part between peripheral parts 3 Undercoat film 4 Reflective film 5 Reflector 6 Strut part 7 Joining part 8 including strut part 8 Reflector 9 3rd silica plate 11 Bank 12 Cavity

本発明者らは、鋭意検討した結果、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ又はＭｏを含む表面層を反射面とする反射体を、第１シリカ板と第２シリカ板による合わせ板の構造を有するシリカ板に設けたキャビティ内に配置するとともに、前記合わせ板とは別の第３シリカ板を前記キャビティ内に配置することによって上記課題が解決されることを見出し、本発明を完成させた。すなわち、本発明に係るシリカ熱反射板は、シリカ板と、該シリカ板の内部に配置されて該シリカ板によって外周囲が完全に覆われてなり、かつ、該シリカ板の一方の表面に入射した赤外線を反射する反射体と、を有するシリカ熱反射板であって、前記シリカ板は、第１シリカ板と第２シリカ板とが対向して配置されて周縁部同士が周縁に沿って環状に連続して接合された合わせ板の構造を有し、前記第１シリカ板及び前記第２シリカ板の外側板面は全面にわたって平坦面であり、該合わせ板の構造は、前記第１シリカ板及び前記第２シリカ板の対向し合う面の間に設けられ、かつ、前記第１シリカ板側及び前記第２シリカ板側の少なくとも一方に前記周縁部同士の接合部によって密閉されているキャビティと、該キャビティ内に収容された第３シリカ板と、を有し、前記反射体は、薄膜、板又は箔であり、かつ、該反射体の周縁に囲まれる全面が反射面であり、前記反射体の少なくとも反射面を含む表面層は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ又はＭｏからなるか、又は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ及びＭｏから選ばれる少なくともいずれか１種を含む合金からなることを特徴とする。 As a result of diligent studies, the present inventors have made a reflector having a surface layer containing Ir, Pt, Rh, Ru, Re, Hf or Mo as a reflecting surface of a laminated plate made of a first silica plate and a second silica plate. We have found that the above problems can be solved by arranging the third silica plate different from the laminated plate in the cavity while arranging it in the cavity provided in the silica plate having a structure, and complete the present invention. rice field. That is, the silica heat-reflecting plate according to the present invention is arranged inside the silica plate and the outer periphery is completely covered by the silica plate, and is incident on one surface of the silica plate. A silica thermal reflector having a reflector that reflects the infrared rays, wherein the first silica plate and the second silica plate are arranged so as to face each other, and peripheral portions thereof are annular along the peripheral edge. It has a structure of a laminated plate continuously joined to, and the outer plate surface of the first silica plate and the second silica plate is a flat surface over the entire surface, and the structure of the laminated plate is the first silica plate. And a cavity provided between the facing surfaces of the second silica plate and sealed on at least one of the first silica plate side and the second silica plate side by a joint portion between the peripheral portions. The reflector is a thin film, a plate, or a foil, and the entire surface surrounded by the peripheral edge of the reflector is a reflection surface. The surface layer containing at least the reflective surface of the body consists of Ir, Pt, Rh, Ru, Re, Hf or Mo, or at least one selected from Ir, Pt, Rh, Ru, Re, Hf and Mo. It is characterized by being composed of a seed-containing alloy.

Claims (9)

シリカ板と、
該シリカ板の内部に配置されて該シリカ板によって外周囲が完全に覆われてなり、かつ、該シリカ板の一方の表面に入射した赤外線を反射する反射体と、を有するシリカ熱反射板であって、
前記シリカ板は、第１シリカ板と第２シリカ板とが対向して配置されて周縁部同士が周縁に沿って環状に連続して接合された合わせ板の構造を有し、
該合わせ板の構造は、前記第１シリカ板及び前記第２シリカ板の対向し合う面の間に設けられ、かつ、前記第１シリカ板側及び前記第２シリカ板側の少なくとも一方に前記周縁部同士の接合部によって密閉されているキャビティと、該キャビティ内に収容された第３シリカ板と、を有し、
前記反射体は、薄膜、板又は箔であり、
前記反射体の少なくとも反射面を含む表面層は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ又はＭｏからなるか、又は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ及びＭｏから選ばれる少なくともいずれか１種を含む合金からなることを特徴とするシリカ熱反射板。 Silica plate and
A silica thermal reflector having a reflector disposed inside the silica plate, the outer periphery of which is completely covered by the silica plate, and a reflector that reflects infrared rays incident on one surface of the silica plate. There,
The silica plate has a structure of a laminated plate in which a first silica plate and a second silica plate are arranged facing each other and peripheral portions are continuously joined in an annular shape along the peripheral edge.
The structure of the laminated plate is provided between the facing surfaces of the first silica plate and the second silica plate, and the peripheral edge is provided on at least one of the first silica plate side and the second silica plate side. It has a cavity sealed by a joint between the portions and a third silica plate housed in the cavity.
The reflector is a thin film, plate or foil.
The surface layer including at least the reflective surface of the reflector is made of Ir, Pt, Rh, Ru, Re, Hf or Mo, or at least one selected from Ir, Pt, Rh, Ru, Re, Hf and Mo. A silica heat reflector characterized by being made of an alloy containing one or more. 前記第３シリカ板は、前記第１シリカ板の表面と向かい合わせとなる表面又は前記第２シリカ板の表面と向かい合わせとなる表面のうち少なくとも一方の表面上に前記反射体として形成した薄膜を有し、
該薄膜は、前記第３シリカ板の表面側から順に、下地膜と、前記反射面を含む表面層としての反射膜と、を有する積層膜であり、
前記下地膜は、Ｔａ、Ｍｏ、Ｔｉ、Ｚｒ、Ｎｂ、Ｃｒ、Ｗ、Ｃｏ又はＮｉからなるか、又は、Ｔａ、Ｍｏ、Ｔｉ、Ｚｒ、Ｎｂ、Ｃｒ、Ｗ、Ｃｏ及びＮｉから選ばれる少なくともいずれか１種を含む合金からなり、
前記反射膜は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ又はＭｏからなるか、又は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ及びＭｏから選ばれる少なくともいずれか１種を含む合金からなり、前記下地膜と前記反射膜とが異なる組成を有していることを特徴とする請求項１に記載のシリカ熱反射板。 The third silica plate is a thin film formed as a reflector on at least one surface of a surface facing the surface of the first silica plate or a surface facing the surface of the second silica plate. Have and
The thin film is a laminated film having a base film and a reflective film as a surface layer including the reflective surface in order from the surface side of the third silica plate.
The undercoat is made of Ta, Mo, Ti, Zr, Nb, Cr, W, Co or Ni, or at least one selected from Ta, Mo, Ti, Zr, Nb, Cr, W, Co and Ni. It consists of an alloy containing one kind
The reflective film is made of Ir, Pt, Rh, Ru, Re, Hf or Mo, or an alloy containing at least one selected from Ir, Pt, Rh, Ru, Re, Hf and Mo. The silica heat reflecting plate according to claim 1, wherein the base film and the reflecting film have different compositions. 前記第１シリカ板の前記キャビティ内の表面上又は前記第２シリカ板の前記キャビティ内の表面上に前記反射体として形成した薄膜を有し、
該薄膜は、前記第１シリカ板の前記キャビティ内の表面側又は前記第２シリカ板の前記キャビティ内の表面側から順に、下地膜と、前記反射面を含む表面層としての反射膜と、を有する積層膜であり、
前記下地膜は、Ｔａ、Ｍｏ、Ｔｉ、Ｚｒ、Ｎｂ、Ｃｒ、Ｗ、Ｃｏ又はＮｉからなるか、又は、Ｔａ、Ｍｏ、Ｔｉ、Ｚｒ、Ｎｂ、Ｃｒ、Ｗ、Ｃｏ及びＮｉから選ばれる少なくともいずれか１種を含む合金からなり、
前記反射膜は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ又はＭｏからなるか、又は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ及びＭｏから選ばれる少なくともいずれか１種を含む合金からなり、前記下地膜と前記反射膜とが異なる組成を有していることを特徴とする請求項１に記載のシリカ熱反射板。 It has a thin film formed as a reflector on the surface of the first silica plate in the cavity or on the surface of the second silica plate in the cavity.
The thin film comprises a base film and a reflective film as a surface layer including the reflective surface in this order from the surface side of the first silica plate in the cavity or the surface side of the second silica plate in the cavity. It is a laminated film that has
The undercoat is made of Ta, Mo, Ti, Zr, Nb, Cr, W, Co or Ni, or at least one selected from Ta, Mo, Ti, Zr, Nb, Cr, W, Co and Ni. It consists of an alloy containing one kind
The reflective film is made of Ir, Pt, Rh, Ru, Re, Hf or Mo, or an alloy containing at least one selected from Ir, Pt, Rh, Ru, Re, Hf and Mo. The silica heat reflecting plate according to claim 1, wherein the base film and the reflecting film have different compositions. 前記第１シリカ板の前記キャビティ内の表面と前記第３シリカ板の表面とに挟まれる位置又は前記第２シリカ板の前記キャビティ内の表面と前記第３シリカ板の表面とに挟まれる位置の少なくともいずれか一方の位置に、前記反射体が配置されており、
該反射体が、板又は箔であり、かつ、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ又はＭｏからなるか、又は、Ｉｒ、Ｐｔ、Ｒｈ、Ｒｕ、Ｒｅ、Ｈｆ及びＭｏから選ばれる少なくともいずれか１種を含む合金からなることを特徴とする請求項１に記載のシリカ熱反射板。 At a position sandwiched between the surface of the first silica plate in the cavity and the surface of the third silica plate, or at a position sandwiched between the surface of the second silica plate in the cavity and the surface of the third silica plate. The reflector is placed at at least one of the positions.
The reflector is a plate or foil and consists of Ir, Pt, Rh, Ru, Re, Hf or Mo, or at least one selected from Ir, Pt, Rh, Ru, Re, Hf and Mo. The silica heat reflecting plate according to claim 1, wherein the silica heat reflecting plate is made of an alloy containing one or more. 前記第１シリカ板及び前記第２シリカ板は、前記第３シリカ板に対して肉厚方向に圧縮応力をかけていることを特徴とする請求項１～４のいずれか一つに記載のシリカ熱反射板。 The silica according to any one of claims 1 to 4, wherein the first silica plate and the second silica plate apply compressive stress to the third silica plate in the wall thickness direction. Heat reflector. 前記第３シリカ板は、前記第１シリカ板の表面と向かい合わせとなる表面又は前記第２シリカ板の表面と向かい合わせとなる表面のうち少なくとも一方の表面上に前記反射体として形成した薄膜を有し、
該薄膜は、Ｍｏ膜又はＭｏを５０質量％以上含む合金膜であることを特徴とする請求項１に記載のシリカ熱反射板。 The third silica plate is a thin film formed as a reflector on at least one surface of a surface facing the surface of the first silica plate or a surface facing the surface of the second silica plate. Have and
The silica heat reflector according to claim 1, wherein the thin film is a Mo film or an alloy film containing 50% by mass or more of Mo. 前記第１シリカ板の前記キャビティ内の表面上又は前記第２シリカ板の前記キャビティ内の表面上に前記反射体として形成した薄膜を有し、
該薄膜は、Ｍｏ膜又はＭｏを５０質量％以上含む合金膜であることを特徴とする請求項１に記載のシリカ熱反射板。 It has a thin film formed as a reflector on the surface of the first silica plate in the cavity or on the surface of the second silica plate in the cavity.
The silica heat reflector according to claim 1, wherein the thin film is a Mo film or an alloy film containing 50% by mass or more of Mo. 前記反射体の厚さは、０．０１μｍ以上５ｍｍ以下であることを特徴とする請求項１～７のいずれか一つに記載のシリカ熱反射板。 The silica heat reflector according to any one of claims 1 to 7, wherein the thickness of the reflector is 0.01 μm or more and 5 mm or less. 前記周縁部同士の接合部は、表面活性化接合部であることを特徴とする請求項１～８のいずれか一つに記載のシリカ熱反射板。

The silica heat reflector according to any one of claims 1 to 8, wherein the joint portion between the peripheral portions is a surface-activated joint portion.
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JP2004031846A (en) * 2002-06-28 2004-01-29 Shin Etsu Handotai Co Ltd Vertical type heat treatment apparatus

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JPH0778779A (en) * 1993-09-07 1995-03-20 Fuji Electric Co Ltd Radiation heat preventing plate and use thereof
JPH09148315A (en) * 1995-11-20 1997-06-06 Tokyo Electron Ltd Thermal treatment apparatus and treatment apparatus
JPH11340157A (en) * 1998-05-29 1999-12-10 Sony Corp Apparatus and method for optical irradiation heat treatment
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