JPH06129898A - Infrared ray sensor - Google Patents
Infrared ray sensorInfo
- Publication number
- JPH06129898A JPH06129898A JP4277575A JP27757592A JPH06129898A JP H06129898 A JPH06129898 A JP H06129898A JP 4277575 A JP4277575 A JP 4277575A JP 27757592 A JP27757592 A JP 27757592A JP H06129898 A JPH06129898 A JP H06129898A
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- substrate
- base
- package
- infrared sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、赤外線センサに関
し、詳しくは、温度による抵抗値の変化を利用して赤外
線を検出する熱型赤外線センサに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an infrared sensor, and more particularly to a thermal infrared sensor that detects infrared rays by utilizing a change in resistance value with temperature.
【０００２】[0002]
【従来の技術】人体検知などに用いられる赤外線センサ
は、微弱な赤外線の輻射エネルギーを検出しなければな
らないため、高感度が要求される。赤外線センサに従来
使用されていた焦電素子に代わって、最近、Ｓｉマイク
ロマシニング技術を用いた熱型赤外線検出素子の開発が
盛んに行われている。これは、薄膜抵抗体には、温度の
変化によって抵抗値が変化するという特性があることか
ら、このような薄膜抵抗体に一対の電極を取り付けてお
き、赤外線の輻射エネルギーによる薄膜抵抗体の温度変
化を検出しようというものである。2. Description of the Related Art Infrared sensors used for human body detection and the like are required to have high sensitivity because they must detect weak infrared radiation energy. In recent years, thermal type infrared detecting elements using Si micromachining technology have been actively developed in place of the pyroelectric elements conventionally used for infrared sensors. This is because the thin film resistor has a characteristic that its resistance value changes with changes in temperature, so a pair of electrodes is attached to such a thin film resistor, and the temperature of the thin film resistor due to infrared radiation energy is changed. It is about detecting changes.
【０００３】このような薄膜抵抗体を用いた熱型赤外線
素子は、半導体製造プロセスを利用して作製できるた
め、バッチ処理による大量生産、低コスト化、ＩＣとの
集積化が可能である等の特徴を有している。また、焦電
素子の欠点である、振動によってノイズが発生するとい
う問題がない点でも優れている。しかし、焦電素子に比
べて、感度が大幅に低いという大きな欠点があるため、
人体検知等に適用することは困難であった。Since a thermal infrared device using such a thin film resistor can be manufactured by utilizing a semiconductor manufacturing process, mass production by batch processing, cost reduction, integration with IC, etc. are possible. It has features. Further, it is also excellent in that there is no problem that noise is generated due to vibration, which is a defect of the pyroelectric element. However, compared to pyroelectric elements, there is a major drawback that the sensitivity is significantly lower,
It was difficult to apply to human body detection.
【０００４】そこで、薄膜抵抗体を用いた熱型赤外線素
子の感度を向上させるための工夫が様々になされてい
る。たとえば、赤外線検出部を熱絶縁性薄膜体の上に設
けるとともに、この熱絶縁性薄膜体を支持する基板のう
ち、赤外線検出部の裏側に対応する部分をエッチングで
欠除し、熱絶縁性薄膜体を中空状態にして周辺のみで支
持する、いわゆるダイアフラム構造が採用されている。
この構造では、赤外線検出部の熱が、薄い熱絶縁性薄膜
体のみを通じて周囲の基板側に伝達されることになるの
で、赤外線検出部の熱が基板側に逃げ難く、赤外線の輻
射エネルギーを薄膜抵抗体の温度変化に効率良く変換で
き、その結果、検出感度が向上する。Therefore, various measures have been taken to improve the sensitivity of the thermal infrared device using the thin film resistor. For example, the infrared detecting section is provided on the heat-insulating thin film body, and the portion of the substrate supporting the heat-insulating thin film body is removed by etching to remove the portion corresponding to the back side of the infrared detecting section. A so-called diaphragm structure is adopted in which the body is made hollow and supported only at the periphery.
In this structure, the heat of the infrared detector is transferred to the surrounding substrate side only through the thin heat-insulating thin film body, so that the heat of the infrared detector is hard to escape to the substrate side, and the infrared radiation energy is thinned. The temperature change of the resistor can be efficiently converted, and as a result, the detection sensitivity is improved.
【０００５】また、赤外線検出部の赤外線入射側に、フ
ィルタを設けておくことが行われている。このフィルタ
は、シリコンなどからなる基板の表面に光学干渉多層膜
がコーティングされたものなどからなり、検出しようと
する赤外線の波長帯を良好に透過させるとともに、雑音
となる不要な波長成分を遮断し、空気との屈折率差によ
る反射損失を軽減することができ、その結果、赤外線セ
ンサの感度を向上させることができる。In addition, a filter is provided on the infrared ray incident side of the infrared ray detector. This filter consists of a substrate made of silicon, etc. coated with an optical interference multilayer film, which allows the infrared wavelength band to be detected to pass satisfactorily and blocks unnecessary wavelength components that become noise. The reflection loss due to the difference in the refractive index with air can be reduced, and as a result, the sensitivity of the infrared sensor can be improved.
【０００６】その他、従来採用されていた主な感度向上
方法は、熱絶縁性薄膜体の熱抵抗を高くする方法、
薄膜抵抗体の温度−抵抗係数（Ｂ定数）を高くする方
法、赤外線吸収膜の吸収率を高める方法などがある。
の方法は、熱絶縁性薄膜体に、ＳｉＯ2 のような熱伝
導率の低い材料を用いるとともに、膜厚を薄くしたり、
前記ダイアフラム構造における中空部分の面積を大きく
したりするというように形状的にも工夫して、熱抵抗を
高めるようにする方法である。In addition to the above, the main methods for improving the sensitivity that have been conventionally adopted are a method of increasing the thermal resistance of the heat insulating thin film,
There are a method of increasing the temperature-resistance coefficient (B constant) of the thin film resistor and a method of increasing the absorption rate of the infrared absorbing film.
In the method of (1), a material having a low thermal conductivity such as SiO 2 is used for the heat insulating thin film, and the film thickness is reduced,
This is a method for increasing the thermal resistance by devising the shape such as increasing the area of the hollow portion in the diaphragm structure.
【０００７】の方法は、たとえば、薄膜抵抗体にアモ
ルファスＳｉを用いれば、前記Ｂ定数が８０００程度に
なり、わずかな温度上昇でも、大きな出力変化が得られ
て感度が向上する。の方法は、たとえば、赤外線吸収
膜の材料に、金黒（ゴールドブラック）を用いれば、赤
外線吸収率が９０％以上あるので、赤外線の輻射エネル
ギーを薄膜抵抗体の温度上昇に有効に利用できる。ま
た、ＳｉＯ2 も、人体検知用の一般的な赤外線センサに
おける検出波長に該当する７〜１２μｍ程度の波長帯に
対する吸収率が高いので、感度向上に有効である。In the method of (1), when amorphous Si is used for the thin film resistor, the B constant becomes about 8000, and even if the temperature rises slightly, a large output change is obtained and the sensitivity is improved. In this method, for example, when gold black is used as the material of the infrared absorbing film, the infrared absorption rate is 90% or more, so that the radiant energy of infrared rays can be effectively used for increasing the temperature of the thin film resistor. Further, SiO 2 is also effective in improving the sensitivity because it has a high absorptance in the wavelength band of about 7 to 12 μm which corresponds to the detection wavelength in a general infrared sensor for human body detection.
【０００８】[0008]
【発明が解決しようとする課題】ところが、上記のよう
な各種の感度向上方法を採用しても、薄膜抵抗体を用い
た熱型赤外線検出素子の感度向上には限度があり、各種
の用途に実用化するには、いまだ感度が不足していた。
具体的には、人体検知装置に赤外線センサを利用する場
合、従来の焦電素子に比べて、薄膜抵抗体を用いた赤外
線検出素子は、周辺装置などの条件が同じであると、感
度が１／１０以下であり、実用上充分な感度を達成する
には、改善が必要である。However, even if the above-mentioned various methods for improving the sensitivity are adopted, there is a limit to the improvement in the sensitivity of the thermal type infrared detecting element using the thin film resistor, and it is not suitable for various applications. The sensitivity was still insufficient for practical use.
Specifically, when an infrared sensor is used for a human body detection device, an infrared detection element using a thin film resistor has a sensitivity of 1 when a peripheral device or the like has the same conditions as compared with a conventional pyroelectric element. / 10 or less, and improvement is necessary to achieve a practically sufficient sensitivity.
【０００９】たとえば、前記の方法では、熱絶縁性薄
膜体の厚みをあまり薄くしたり、中空部分の面積を広く
したりすると、薄膜体の強度が不足して、破壊に至るこ
とになるので、この方法による感度向上効果には限度が
ある。前記の方法では、現在のところ、前記アモルフ
ァスＳｉよりも、さらに特性の優れた実用可能な薄膜抵
抗体の材料は見当たらず、これ以上の感度向上は難し
い。前記の方法でも、赤外線吸収膜の材料として、現
在以上の、飛躍的な特性向上は望めない。また、熱絶縁
性薄膜体や薄膜抵抗体、赤外線吸収膜などに、特性の優
れた材料が見つかったとしても、材料のコストが大幅に
高くなるのでは、実用化は困難である。For example, in the above method, if the thickness of the heat insulating thin film is too thin or the area of the hollow portion is wide, the strength of the thin film is insufficient and the thin film may be destroyed. There is a limit to the effect of improving the sensitivity by this method. In the above-mentioned method, at present, a practical thin-film resistor material having better characteristics than that of the amorphous Si is not found, and it is difficult to further improve the sensitivity. Even with the method described above, it is not possible to expect a dramatic improvement in the characteristics of the material for the infrared absorbing film, which is higher than the present level. Further, even if a material having excellent characteristics is found in the heat insulating thin film body, the thin film resistor, the infrared absorbing film, etc., it is difficult to put it into practical use because the cost of the material is significantly increased.
【００１０】そこで、この発明の課題は、前記のような
薄膜抵抗体を用いた赤外線センサにおいて、赤外線の検
出感度を大幅に向上させて、各種の用途に好適に採用で
きる赤外線センサを提供することにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide an infrared sensor using the above-mentioned thin film resistor, which has a significantly improved infrared detection sensitivity and can be suitably adopted for various purposes. It is in.
【００１１】[0011]
【課題を解決するための手段】上記課題を解決する、こ
の発明のうち、請求項１の赤外線センサは、基板に中空
状態で支持された熱絶縁膜の上に、一対の電極を有する
抵抗体層からなる赤外線検出部を備え、前記基板がパッ
ケージ内に封入されてなる赤外線センサにおいて、パッ
ケージの内部空間が、１Torr以下の減圧状態である。In order to solve the above-mentioned problems, the infrared sensor according to claim 1 of the present invention is a resistor having a pair of electrodes on a heat insulating film supported in a hollow state on a substrate. In an infrared sensor having an infrared detecting section composed of layers, in which the substrate is enclosed in a package, the internal space of the package is in a reduced pressure state of 1 Torr or less.
【００１２】基板や熱絶縁膜、赤外線検出部などの赤外
線検出素子の基本的な構造は、従来の薄膜抵抗体を用い
た赤外線検出素子と同様でよい。このような赤外線検出
素子は、金属や合成樹脂、セラミックなどからなるパッ
ケージ内に実装されて、赤外線センサが構成される。パ
ッケージの基本的な構造も、従来の通常の赤外線センサ
と同様でよい。The basic structure of the infrared detecting element such as the substrate, the heat insulating film and the infrared detecting portion may be the same as that of the conventional infrared detecting element using a thin film resistor. Such an infrared detecting element is mounted in a package made of metal, synthetic resin, ceramic or the like to form an infrared sensor. The basic structure of the package may be the same as that of a conventional normal infrared sensor.
【００１３】この発明では、赤外線検出素子の基板をパ
ッケージの基台などに実装して、赤外線検出素子をパッ
ケージ内に封入しておくとともに、このパッケージの内
部空間を、１Torr以下の減圧状態にしておく。パッケー
ジ内を減圧状態にするには、赤外線検出素子をパッケー
ジ内に封入した後、パッケージから真空排気して減圧し
てもよいし、パッケージの基台などに赤外線検出素子の
基板を実装した後、基台の上にキャップすなわち蓋体を
被せて接合封止する作業を、減圧状態下で行ってもよ
い。その他、各種電子部品などにおける真空密封技術が
適用できる。According to the present invention, the substrate of the infrared detecting element is mounted on the base of the package, etc., and the infrared detecting element is enclosed in the package, and the internal space of the package is reduced to 1 Torr or less. deep. To reduce the pressure inside the package, after enclosing the infrared detection element in the package, you may evacuate the package to reduce the pressure, or after mounting the substrate of the infrared detection element on the base of the package, The work of covering the base with a cap, that is, a lid, and performing joint sealing may be performed under reduced pressure. In addition, vacuum sealing technology for various electronic components can be applied.
【００１４】減圧圧力は、低いほど、すなわち真空に近
いほど、この発明の作用効果が良好に達成されるが、減
圧作業の行い易さや、減圧状態を維持する密封構造の複
雑さなども考慮して、１Torr以下の適当な圧力に設定し
ておけばよい。パッケージの内部空間は、大気を減圧状
態で充填しておいてもよいし、熱伝導率の小さなガスあ
るいは不活性ガスなどを減圧状態で充填しておいてもよ
い。The lower the decompression pressure, that is, the closer it is to a vacuum, the better the effect of the present invention is achieved. However, in consideration of the ease of decompression work and the complexity of the sealing structure for maintaining the decompression state. Therefore, the pressure may be set to an appropriate pressure of 1 Torr or less. The internal space of the package may be filled with air under a reduced pressure, or may be filled with a gas having a low thermal conductivity or an inert gas under a reduced pressure.
【００１５】この発明では、赤外線検出素子をパッケー
ジ内に封入しておくので、赤外線検出素子へ赤外線が良
好に入射されるように、パッケージの壁面に、赤外線の
入射窓をあけ、この窓にフィルタを設けておくのが好ま
しい。フィルタの材料および構造は、従来の赤外線セン
サにも使用されているような通常の赤外線フィルタが用
いられる。In the present invention, since the infrared detecting element is enclosed in the package, an infrared incident window is opened on the wall surface of the package and a filter is provided in this window so that infrared rays can be favorably incident on the infrared detecting element. Is preferably provided. As the material and structure of the filter, a usual infrared filter as used in the conventional infrared sensor is used.
【００１６】パッケージ内に封入される赤外線検出素子
は、赤外線検出部が、出来るだけパッケージの壁体など
の構造物から離れた状態で配置されるようにしておくの
が好ましい。そのため、請求項２のように、基板がパッ
ケージの基台上に実装され、基台のうち、空間を隔てて
赤外線検出部と対面する個所が基板の接合個所よりも凹
んでいれば、赤外線検出部と基台の表面との距離を大き
くすることができる。The infrared detecting element enclosed in the package is preferably arranged such that the infrared detecting section is located as far as possible from the structure such as the wall of the package. Therefore, if the board is mounted on the base of the package and the part of the base that faces the infrared detector is separated from the joining part of the board by a space, the infrared detection is performed. The distance between the part and the surface of the base can be increased.
【００１７】この基台に設ける凹部の平面形状および深
さは、基板の基台への接合面積を充分にとることがで
き、基台の強度などを損なわなければ、出来るだけ大き
く深いほうが好ましいが、凹部の加工の手間なども考慮
して、少なくとも、赤外線検出部における抵抗体層や赤
外線吸収層の平面形状と同じ程度の形状寸法にしておく
のが好ましい。The plane shape and depth of the recess provided on the base are preferably as large and deep as possible so that a sufficient bonding area of the substrate to the base can be secured and the strength of the base is not impaired. In consideration of the time and labor required to process the concave portion, it is preferable to make the dimensions at least about the same as the planar shape of the resistor layer or the infrared absorbing layer in the infrared detecting section.
【００１８】凹部の加工方法は、基台の材料に合わせ
て、任意の加工手段が採用でき、たとえば、基台の成形
と同時に成形しておいたり、機械加工を行ったり、エッ
チングなどの化学的加工手段を採用したりすることがで
きる。つぎに、請求項３のように、基台のうち、基板の
接合個所にスペーサを設け、このスペーサの上に基板を
接合しておくことができる。As a method of processing the concave portion, any processing means can be adopted according to the material of the base, and for example, the base is formed at the same time as the base is formed, mechanical processing is performed, chemical treatment such as etching is performed. Processing means can be adopted. Next, as in the third aspect, a spacer can be provided at a joint portion of the substrate on the base, and the substrate can be joined on the spacer.
【００１９】すなわち、基台の赤外線検出部と対面する
個所に凹部を加工する代わりに、基板の接合個所を、赤
外線検出部と対面する個所よりも高くしておくのであ
る。スペーサの形状および配置は、基板を基台に安定し
て確実に接合しておけ、スペーサが赤外線検出部と対面
する個所にはみださないようにしておければ、自由に設
定できる。スペーサの高さは、高くしておくほど、赤外
線検出部と基台の表面との間の距離をとれるが、基板の
支持強度やパッケージ全体の高さなども考慮して、必要
かつ充分な高さに設定しておけばよい。スペーサの材料
は、基台および基板に接合可能な材料であればよく、基
台あるいは基板と同じ材料など、通常の半導体装置やパ
ッケージに使用されている材料が用いられる。That is, instead of processing the concave portion at the portion facing the infrared detecting portion of the base, the joining portion of the substrate is made higher than the portion facing the infrared detecting portion. The shape and arrangement of the spacers can be freely set as long as the substrate is stably and surely joined to the base and the spacers are not exposed at a portion facing the infrared detection section. The higher the spacer height, the greater the distance between the infrared detector and the surface of the base, but the necessary and sufficient height should be taken into consideration in consideration of the support strength of the substrate and the height of the entire package. You can set it to The material of the spacer may be any material that can be bonded to the base and the substrate, and the same material as that of the base or the substrate, which is commonly used for semiconductor devices and packages, is used.
【００２０】以上に説明した、パッケージ内を減圧状態
にしておくこと、あるいは、基台に設ける凹部もしくは
スペーサの構成以外の、赤外線センサの構成、たとえ
ば、赤外線検出部の抵抗体層や赤外線吸収層あるいは熱
絶縁膜の材料や構造、基板に対する熱絶縁膜の支持構
造、基板に設ける中空部の形状などは、通常の赤外線セ
ンサにおける構成を、任意に組み合わせて構成すること
ができる。The structure of the infrared sensor other than the structure described above in which the inside of the package is kept in a decompressed state or the structure of the recess or the spacer provided in the base, for example, the resistor layer or the infrared absorbing layer of the infrared detecting part Alternatively, the material and structure of the heat insulating film, the support structure of the heat insulating film with respect to the substrate, the shape of the hollow portion provided in the substrate, and the like can be configured by arbitrarily combining the configurations of the ordinary infrared sensor.
【００２１】[0021]
【作用】赤外線検出部において、一定の入射エネルギー
に対する温度上昇を高くするのに適した構造体は、赤外
線検出部を構成する材料の熱伝導率、比熱等の物性値お
よび構造体の形状寸法をもとに、所定の熱計算を行うこ
とによって、推定することができる。しかし、本発明者
らが、上記のような熱計算にもとづいて、実際に赤外線
検出素子を作製し、その構造と温度上昇の関係を求めた
ところ、ある一定レベル以上まで熱抵抗が高くなってく
ると、それ以上は推定値通りに温度上昇が起こらないと
いうことが、判明した。In the infrared detecting section, the structure suitable for increasing the temperature rise for a certain incident energy is determined by the thermal conductivity of the material constituting the infrared detecting section, the physical properties such as specific heat and the shape and size of the structure. It can be estimated based on a predetermined heat calculation. However, the inventors of the present invention actually manufactured an infrared detection element based on the above thermal calculation and found the relationship between the structure and the temperature rise. As a result, the thermal resistance increased to a certain level or higher. When it came, it became clear that the temperature did not rise as expected even further.
【００２２】これは、赤外線検出部、たとえば熱絶縁膜
の材料やダイアフラム構造の具体的形状構造を改善し
て、赤外線検出部から熱絶縁膜などを介して熱が逃げる
のが良好に阻止された状態になると、赤外線検出部の周
囲に存在する空気を介しての熱伝導が、赤外線検出部か
ら外部への熱の伝達に大きな割合を占めるようになるか
らであると考えられる。したがって、この段階では、そ
れ以上に熱絶縁膜の材料の改良などを行っても、もは
や、赤外線センサの感度向上にはあまり役に立たないの
である。This is because the infrared detecting portion, for example, the material of the heat insulating film and the specific shape of the diaphragm structure are improved, and the heat is effectively prevented from escaping from the infrared detecting portion through the heat insulating film. It is considered that, in this state, the heat conduction through the air existing around the infrared detecting portion accounts for a large proportion of the heat transfer from the infrared detecting portion to the outside. Therefore, at this stage, further improvement of the material of the heat insulating film is no longer useful for improving the sensitivity of the infrared sensor.
【００２３】ところで、一般に、温度Ｔ1 、Ｔ2 の２枚
の平行平板間で、中間に存在する気体を介しての熱伝導
量Ｑは、気体分子の平均自由工程Ｌが平行平板間の間隔
ｄよりも充分に小さい場合、以下の式で表される。 Ｑ＝κＡ（Ｔ1 −Ｔ2 ）／ｄ ここで、κ：気体の熱伝導率、Ａ：断面積である。By the way, generally, the amount Q of heat conduction between the two parallel plates at the temperatures T 1 and T 2 through the gas existing in the middle is determined by the mean free path L of the gas molecules. When it is sufficiently smaller than d, it is represented by the following formula. Q = κA (T 1 −T 2 ) / d where κ is the thermal conductivity of gas and A is the cross-sectional area.
【００２４】上の式を、前記赤外線センサに適用する
と、赤外線検出部とパッケージの壁体などの構造部分と
の間に存在する気体の熱伝導率が小さいほど、この気体
を介しての熱伝導は少なくなり、赤外線検出部を良好に
熱絶縁できることが判る。そこで、この発明では、赤外
線検出素子をパッケージ内に封入しておくとともに、パ
ッケージの内部空間を、１Torr以下の減圧状態にしてお
くことによって、内部空間の気体による実質的な熱伝導
率を低下させることができ、その結果、赤外線検出部か
ら内部空間の気体を介してパッケージの構造部分へと熱
が逃げるのを阻止して、赤外線の検出感度を向上させる
ことができる。When the above equation is applied to the infrared sensor, the smaller the thermal conductivity of the gas existing between the infrared detecting portion and the structural portion such as the wall of the package, the lower the heat conduction through this gas. It can be seen that the infrared detection section can be satisfactorily thermally insulated. Therefore, in the present invention, the infrared detecting element is enclosed in the package, and the internal space of the package is kept in a depressurized state of 1 Torr or less, so that the substantial thermal conductivity due to the gas in the internal space is reduced. As a result, heat can be prevented from escaping from the infrared detection section to the structural portion of the package via the gas in the internal space, and the infrared detection sensitivity can be improved.
【００２５】つぎに、前記式から、赤外線検出部とパッ
ケージの構造部分との間隔を広げることによっても、赤
外線検出部からパッケージの構造部分への熱伝導量が減
少することが判る。通常の赤外線センサでは、赤外線検
出部の片面側には、赤外線フィルタが設けられ、赤外線
検出部の反対面側には、基台の表面が間隔をあけて対面
している。赤外線フィルタと赤外線検出部の距離は、赤
外線検出素子の実装構造や光学的や制約条件があるの
で、通常、１〜２mm程度に設定されていて、この距離を
大きく変更することはできない。Next, from the above equation, it can be seen that the amount of heat conduction from the infrared detecting section to the structural section of the package is also reduced by increasing the distance between the infrared detecting section and the structural section of the package. In a normal infrared sensor, an infrared filter is provided on one side of the infrared detecting section, and the surface of the base is opposed to the opposite side of the infrared detecting section with a space. The distance between the infrared filter and the infrared detection section is usually set to about 1 to 2 mm because of the mounting structure of the infrared detection element, the optics, and restrictions, and this distance cannot be changed greatly.
【００２６】そこで、請求項２のように、基台のうち、
空間を隔てて赤外線検出部と対面する個所を、基板の接
合個所よりも凹ませておけば、赤外線検出部と、これに
対面する基台の表面との距離が大きくなり、赤外線検出
部から基台の表面への熱伝達を阻止することができる。
この構造は、表面が平坦な基台を用いた場合と、基台の
厚みは同じでよく、パッケージ全体の厚みが増える心配
もないという利点を有している。Therefore, as in claim 2, of the base,
If the location facing the infrared detection section across a space is recessed more than the joint location on the substrate, the distance between the infrared detection section and the surface of the base that faces this becomes large, and the infrared detection section Heat transfer to the surface of the table can be prevented.
This structure has the advantage that the thickness of the base may be the same as when a base with a flat surface is used, and there is no concern that the thickness of the entire package will increase.
【００２７】また、請求項３のように、基台のうち、基
板の接合個所にスペーサを設け、スペーサの上に基板を
接合しておくことにより、前記同様に、赤外線検出部
と、これにた対面する基台の表面との距離を大きくし
て、赤外線検出部から基台の表面への熱伝達を阻止する
ことができる。この構造は、基台の厚みを充分に確保で
きるので、基台の機械的強度や耐久性が良好であるとい
う利点を有している。Further, as described in claim 3, by providing a spacer at the joint portion of the substrate of the base and joining the substrate on the spacer, the infrared detecting section and the infrared detecting section The distance from the surface of the base that faces the base can be increased to prevent heat transfer from the infrared detector to the surface of the base. This structure has an advantage that the mechanical strength and durability of the base are good because the thickness of the base can be sufficiently secured.
【００２８】[0028]
【実施例】ついで、この発明の実施例について、図面を
参照しながら以下に説明する。図１に、赤外線センサの
全体構造を示している。シリコンなどからなる基板１０
の上に、窒化シリコンや酸化シリコンなどからなる熱絶
縁膜２０が形成され、熱絶縁膜２０の上には、アモルフ
ァスＳｉなどからなる抵抗体層４０、抵抗体層４０を上
下から挟むクロムなどからなる電極層３０、３０、抵抗
体層４０の表面を覆う赤外線吸収層５０を備えた赤外線
検出部が形成されている。電極層３０、３０の端部に
は、配線接続用のパッド３２、３２が設けられている。
赤外線検出部の設置個所に対応する熱絶縁膜２０の裏側
で、基板１０には中空部１２が欠除形成されており、こ
の中空部１２の部分では、熱絶縁膜２０が中空状態にな
っており、いわゆるダイアフラム構造を構成している。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows the entire structure of the infrared sensor. Substrate 10 made of silicon or the like
A heat insulating film 20 made of silicon nitride or silicon oxide is formed on the heat insulating film 20, and a resistor layer 40 made of amorphous Si or the like and chromium sandwiching the resistor layer 40 from above and below are formed on the heat insulating film 20. The infrared detecting section including the infrared absorbing layer 50 covering the surfaces of the electrode layers 30 and 30 and the resistor layer 40 is formed. Pads 32, 32 for wiring connection are provided at the ends of the electrode layers 30, 30.
On the back side of the heat insulating film 20 corresponding to the installation location of the infrared detecting section, a hollow portion 12 is formed in the substrate 10 by cutting away, and in this hollow portion 12, the heat insulating film 20 is in a hollow state. And constitutes a so-called diaphragm structure.
【００２９】上記のような構造の赤外線検出素子が、パ
ッケージに封入されて赤外線センサとなる。赤外線検出
素子の基板１０が、セラミックや、金属あるいは合成樹
脂などからなる基台６０の上に、接合剤６２を介して接
合搭載されている。基台６０には、棒状の端子６４、６
４が、基台６０の上下面を貫通して取り付けられてい
る。端子６４、６４の上端と、赤外線検出素子のパッド
３２、３２は、ボンディングワイヤ６６で配線接続され
ている。The infrared detecting element having the above structure is enclosed in a package to form an infrared sensor. The substrate 10 of the infrared detection element is bonded and mounted on a base 60 made of ceramic, metal, synthetic resin or the like via a bonding agent 62. The base 60 has rod-shaped terminals 64, 6
4 are attached so as to penetrate the upper and lower surfaces of the base 60. The upper ends of the terminals 64, 64 and the pads 32, 32 of the infrared detection element are connected by a bonding wire 66.
【００３０】基台６０のうち、赤外線検出素子の赤外線
検出部すなわち抵抗体層４０や赤外線吸収層５０と対面
する個所に、凹部６８が形成されており、基板１０が接
合される個所よりも、表面が低くなっている。すなわ
ち、赤外線検出部を設けた熱絶縁膜２０から、基板１０
の中空部１２を介して、凹部６８の底面までの距離が、
熱絶縁膜２０から基板１０を基台６０に接合した個所ま
での距離よりも、大きくなっている。A concave portion 68 is formed in the base 60 at a portion facing the infrared detecting portion of the infrared detecting element, that is, the resistor layer 40 and the infrared absorbing layer 50, and the concave portion 68 is formed more than the portion where the substrate 10 is bonded. The surface is low. That is, from the thermal insulation film 20 provided with the infrared detecting section to the substrate 10
The distance from the hollow portion 12 to the bottom surface of the recess 68 is
It is larger than the distance from the heat insulating film 20 to the portion where the substrate 10 is joined to the base 60.
【００３１】基台６０の上方には、金属などからなるキ
ャップ状の蓋体７０が被せられて、赤外線検出素子を封
入した状態で、基台６０に接合されている。この基台６
０と蓋体７０で囲まれた内部空間は、不活性ガスを充填
しておいたり、減圧状態にしておいたりすることができ
る。蓋体７０のうち、赤外線検出部すなわち抵抗体層４
０および赤外線吸収層５０と対面する個所には、窓が貫
通形成されて、この窓にはフィルタ７２が取り付けられ
ている。フィルタ７２は、検出しようとする赤外線の透
過率の高いガラスや透明合成樹脂などが用いられる。A cap-shaped lid 70 made of metal or the like is placed over the base 60, and is joined to the base 60 in a state where the infrared detecting element is enclosed. This base 6
The inner space surrounded by 0 and the lid 70 can be filled with an inert gas or can be kept in a reduced pressure state. Infrared detector of the lid 70, that is, the resistor layer 4
0 and a portion facing the infrared absorption layer 50 has a window formed therethrough, and a filter 72 is attached to this window. The filter 72 is made of glass, transparent synthetic resin, or the like having a high transmittance of infrared rays to be detected.
【００３２】上記のような構造を備えた赤外線センサの
製造方法について、特に、赤外線検出素子部分の製造方
法を主に説明する。まず、シリコン基板の上に熱絶縁膜
を形成した。すなわち、減圧ＣＶＤ法を用い、Ｓｉ3 Ｎ
4 を０．１μｍ、ＳｉＯ2 を０．４μｍ、さらにＳｉ3
Ｎ4 を０．１μｍ連続形成して、３層構造の多層膜から
なる熱絶縁膜を形成した。A method of manufacturing an infrared sensor having the above structure, particularly a method of manufacturing an infrared detecting element portion will be mainly described. First, a heat insulating film was formed on a silicon substrate. That is, using a low pressure CVD method, Si 3 N
4 to 0.1 μm, SiO 2 to 0.4 μm, and Si 3
N 4 was continuously formed in a thickness of 0.1 μm to form a heat insulating film composed of a multilayer film having a three-layer structure.
【００３３】この熱絶縁膜の上に、赤外線検出部を形成
した。ＥＢ蒸着により、下部電極となるＣｒを０．２μ
ｍ形成し、フォトリソグラフィで所定のパターンに加工
した。下部電極の上に、プラズマＣＶＤ法で、抵抗体層
となるアモルファスＳｉを１μｍ形成し、所定のパター
ンに加工した。この抵抗体層の上に、プラズマＣＶＤ法
で、赤外線吸収膜となるＳｉＯ2 を１．５μｍ形成し、
所定のパターンに加工した。このようにして形成された
赤外線検出部の平面形状は、１mm角の正方形状であっ
た。なお、ひとつの基板上には、上記したような赤外線
検出部を合計４個形成して、ブリッジ状に配線接続し
た。An infrared detecting section was formed on the heat insulating film. By EB deposition, Cr used as the lower electrode is 0.2μ
m and formed into a predetermined pattern by photolithography. Amorphous Si to be a resistor layer was formed in a thickness of 1 μm on the lower electrode by a plasma CVD method and processed into a predetermined pattern. SiO 2 serving as an infrared absorbing film was formed to a thickness of 1.5 μm on the resistor layer by a plasma CVD method,
It was processed into a predetermined pattern. The planar shape of the infrared detecting portion thus formed was a square shape of 1 mm square. It should be noted that a total of four infrared detection parts as described above were formed on one substrate and connected in a bridge shape.
【００３４】基板のうち、赤外線検出部が形成された面
の裏面側から、水酸化カリウムでエッチングして、基板
をパターン状に欠除して中空部を形成した。このように
して形成された熱絶縁膜の中空部分の大きさは、１．５
mm角の正方形状であった。このようにして作製された赤
外線検出素子を、パッケージの基台上にダイボンディン
グして実装し、ワイヤボンディングで配線接続を行っ
た。このとき使用した基台には、赤外線検出素子の赤外
線検出部と対面する個所に、幅１．５mm、深さ１．５mm
の凹部を形成しておいた。基台に被せる蓋体には、低融
点ガラスでフィルタを封着しておいた。５×１０-2Torr
の減圧下で、赤外線検出素子が実装された基台に蓋体を
被せ、抵抗溶接によって封止した。これによって、パッ
ケージの内部空間は減圧状態のままで密封された。Of the substrate, a hollow portion was formed by etching the substrate from the back surface side of the surface on which the infrared detecting portion was formed, with potassium hydroxide, and notching the substrate in a pattern. The size of the hollow portion of the heat insulating film thus formed is 1.5
It was a square shape with mm sides. The infrared detection element thus produced was mounted on the base of the package by die bonding, and wiring connection was performed by wire bonding. The base used at this time had a width of 1.5 mm and a depth of 1.5 mm at the location facing the infrared detection part of the infrared detection element.
The concave portion of was formed. The lid which covers the base has a filter sealed with low melting point glass. 5 × 10 -2 Torr
Under reduced pressure, the base on which the infrared detection element was mounted was covered with a lid and sealed by resistance welding. As a result, the internal space of the package was hermetically sealed under the reduced pressure.
【００３５】以上のようにして製造された赤外線センサ
に、黒体炉から照射された一定エネルギーの赤外線を入
射させて、そのときの温度上昇を測定したところ、３．
０ｍ℃／０．１μＷであった。比較のために、同様の構
造を備えているが、パッケージの封止を大気圧環境で行
った赤外線センサを製造し、同様の測定を行ったとこ
ろ、温度上昇が、０．３ｍ℃／０．１μＷであった。こ
のことから、この実施例の赤外線センサは、従来構造の
赤外線センサに比べて、入射した赤外線のエネルギーが
同じでも、より大きな温度上昇が得られることが判る。
すなわち、赤外線検出部から熱が逃げ難く、赤外線のエ
ネルギーを抵抗体層の温度上昇に有効に変換して、高い
出力感度が得られることになる。When the infrared sensor irradiated as described above was irradiated with infrared light of a constant energy to the infrared sensor manufactured as described above and the temperature rise at that time was measured, 3.
It was 0 m ° C./0.1 μW. For comparison, an infrared sensor having the same structure but having a package sealed in an atmospheric pressure environment was manufactured, and the same measurement was performed. As a result, the temperature rise was 0.3 m ° C./0. It was 1 μW. From this, it can be seen that the infrared sensor of this embodiment can obtain a larger temperature rise than the infrared sensor of the conventional structure even if the energy of the incident infrared rays is the same.
That is, it is difficult for heat to escape from the infrared detecting section, the infrared energy is effectively converted into the temperature rise of the resistor layer, and high output sensitivity is obtained.
【００３６】つぎに、図２に示す実施例は、基台に凹部
を形成しておく代わりに、スペーサを設けておく場合で
ある。基本的な構造は前記実施例と同様であるので、共
通する部分には同じ符号をつけ、構成の異なる部分を主
に説明する。赤外線検出素子の構造は前記実施例と全く
同じである。パッケージの基台６０には、前記実施例の
ような凹部は形成されておらず、全面が平坦に形成され
ている。この基台６０の上で、赤外線検出素子の基板１
０を接合する個所に、基台６０と同様の材料などからな
るスペーサ６９、６９が接合され、このスペーサ６９、
６９の上に接合材６２を介して基板１０が接合されてい
る。したがって、赤外線検出部の熱絶縁膜２０から基台
６０の表面までの距離は、基板１０の厚みにスペーサ６
９の厚みを加えた長さになる。Next, the embodiment shown in FIG. 2 is a case where a spacer is provided instead of forming a recess in the base. Since the basic structure is the same as that of the above-mentioned embodiment, common parts are given the same reference numerals, and the different parts will be mainly described. The structure of the infrared detecting element is exactly the same as that of the above embodiment. The base 60 of the package does not have the recess as in the above-described embodiment, but has a flat surface. On the base 60, the infrared detection element substrate 1
Spacers 69, 69 made of a material similar to that of the base 60 are joined to the place where 0 is joined.
The substrate 10 is bonded onto the substrate 69 via the bonding material 62. Therefore, the distance from the thermal insulation film 20 of the infrared detecting section to the surface of the base 60 is determined by the thickness of the substrate 10 and the spacer 6
The length is 9 plus the thickness.
【００３７】上記実施例についても、前記実施例と同様
に温度上昇を測定したところ、前記実施例と同様に高い
温度上昇を示し、赤外線センサの感度向上を果たせるこ
とが確認できた。さらに、図３に示す実施例は、基台に
凹部およびスペーサの何れをも設けていない場合であ
る。Also in the above example, when the temperature rise was measured in the same manner as in the above example, it was confirmed that the temperature rise was as high as in the above example and the sensitivity of the infrared sensor could be improved. Furthermore, the embodiment shown in FIG. 3 is a case where neither the recess nor the spacer is provided in the base.
【００３８】この実施例の場合にも、前記各実施例と同
様の温度上昇測定を行ったところ、前記図１および図２
の実施例に比べると温度上昇は少なかったが、パッケー
ジの内部空間が大気圧のままの従来構造の赤外線センサ
に比べると、はるかに高い温度上昇が認められ、この発
明の作用効果が実証された。つぎに、図４には、前記図
１の実施例の赤外線センサで、パッケージを封止する際
の減圧圧力を種々に変えて赤外線センサを製造し、その
温度上昇を測定した結果をグラフに示している。このグ
ラフをみれば、真空度が０．１Torrのあたりで、温度上
昇値が顕著に増大していることが判る。なお、温度上昇
がある程度達成されると、それ以上真空度が高くなって
も、温度上昇の向上はあまり認められなくなることも判
る。Also in the case of this embodiment, the same temperature rise measurement as in each of the above-mentioned embodiments was carried out.
Although the temperature rise was smaller than that of the example of Example 1, a much higher temperature rise was observed as compared with the infrared sensor of the conventional structure in which the internal space of the package remains at atmospheric pressure, demonstrating the action and effect of the present invention. . Next, FIG. 4 is a graph showing the results of measuring the temperature rise of the infrared sensor of the embodiment of FIG. 1 manufactured by changing the depressurizing pressure when the package is sealed. ing. It can be seen from this graph that the temperature rise value remarkably increases when the degree of vacuum is around 0.1 Torr. It is also understood that when the temperature rise is achieved to some extent, the improvement in temperature rise is not so much recognized even if the degree of vacuum is further increased.
【００３９】[0039]
【発明の効果】以上に述べた、この発明にかかる赤外線
センサは、パッケージの内部空間を１Torr以下の減圧状
態にしていることにより、赤外線検出部から内部空間の
気体を介してパッケージの構造部分へと、熱が逃げるの
を良好に阻止して、赤外線検出部における赤外線の検出
感度を大幅に向上させることができた。As described above, in the infrared sensor according to the present invention, the internal space of the package is depressurized to 1 Torr or less, so that the infrared detecting section transfers to the structural portion of the package through the gas in the internal space. As a result, heat can be effectively prevented from escaping, and the infrared detection sensitivity of the infrared detection unit can be greatly improved.
【００４０】その結果、従来、薄膜抵抗体を用いた熱型
赤外線センサでは、限界があると考えられていた検出感
度を、さらに大きく向上させることが可能になり、この
種赤外線センサの実用化、あるいは、用途の拡大に大き
く貢献することができる。また、この発明では、赤外線
検出部やパッケージの基本的な構造は、従来と同様の構
造が採用できるので、製造は容易でコスト的にも安価に
生産することができる。As a result, it has become possible to greatly improve the detection sensitivity, which was conventionally considered to be limited in the thermal type infrared sensor using the thin film resistor, and the infrared sensor of this kind can be put into practical use. Alternatively, it can greatly contribute to the expansion of applications. Further, in the present invention, since the infrared detection unit and the package can have the same basic structure as the conventional structure, the manufacturing is easy and the cost can be reduced.
【００４１】つぎに、上記この発明の赤外線センサにお
いて、赤外線検出素子を実装する基台に、前記したよう
な凹部やスペーサを設けておけば、赤外線検出部から基
台の表面までの間隔を広げることができ、この間隔の空
間が減圧状態であることと相まって、赤外線検出部から
基台に熱が逃げるのを、より良好に阻止することができ
る。Next, in the above infrared sensor of the present invention, if the above-mentioned recess or spacer is provided on the base on which the infrared detecting element is mounted, the distance from the infrared detecting portion to the surface of the base is widened. This makes it possible to prevent heat from escaping from the infrared detection section to the base together with the fact that the space of this interval is in a reduced pressure state.
【図１】 この発明の実施例をあらわす赤外線センサの
断面図FIG. 1 is a sectional view of an infrared sensor showing an embodiment of the present invention.
【図２】 別の実施例をあらわす赤外線センサの断面図FIG. 2 is a sectional view of an infrared sensor showing another embodiment.
【図３】 別の実施例をあらわす赤外線センサの断面図FIG. 3 is a sectional view of an infrared sensor showing another embodiment.
【図４】 パッケージの真空度と赤外線検出部の温度上
昇の関係を表す線図FIG. 4 is a diagram showing the relationship between the vacuum degree of the package and the temperature rise of the infrared detection section.
１０ 基板 １２ 中空部 ２０ 熱絶縁膜 ３０ 電極層 ４０ 抵抗体層 ５０ 赤外線吸収層 ６０ 基台 ６８ 凹部 ６９ スペーサ ７０ 蓋体 ７２ フィルタ DESCRIPTION OF SYMBOLS 10 Substrate 12 Hollow part 20 Thermal insulating film 30 Electrode layer 40 Resistor layer 50 Infrared absorption layer 60 Base 68 Recess 69 Spacer 70 Lid 72 Filter
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成４年１２月２１日[Submission date] December 21, 1992
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２７[Name of item to be corrected] 0027
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【００２７】また、請求項３のように、基台のうち、基
板の接合個所にスペーサを設け、スペーサの上に基板を
接合しておくことにより、前記同様に、赤外線検出部
と、これに対面する基台の表面との距離を大きくして、
赤外線検出部から基台の表面への熱伝達を阻止すること
ができる。この構造は、基台の厚みを充分に確保できる
ので、基台の機械的強度や耐久性が良好であるという利
点を有している。Further, as according to claim 3, of the base, a spacer provided on the junction point of the substrate, by previously bonding the substrate on the spacer, the same way, an infrared detector, in which by increasing the distance between the pair facing base surface,
It is possible to prevent heat transfer from the infrared detecting section to the surface of the base. This structure has an advantage that the mechanical strength and durability of the base are good because the thickness of the base can be sufficiently secured.
フロントページの続き (72)発明者 石田 拓郎 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 柿手 啓治 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 姫澤 秀和 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 紙谷 文啓 大阪府門真市大字門真1048番地松下電工株 式会社内Front page continuation (72) Inventor Takuro Ishida 1048 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Works Co., Ltd. (72) Keiji Kakite 1048 Kadoma, Kadoma City, Osaka Matsushita Electric Works Co., Ltd. (72) Inventor Hidekazu Himezawa, 1048, Kadoma, Kadoma, Osaka Prefecture, Matsushita Electric Works Co., Ltd. (72) Fumihiro Kamiya, 1048, Kadoma, Kadoma City, Osaka
Claims (3)
上に、一対の電極を有する抵抗体層からなる赤外線検出
部を備え、前記基板がパッケージ内に封入されてなる赤
外線センサにおいて、パッケージの内部空間が、１Torr
以下の減圧状態であることを特徴とする赤外線センサ。1. An infrared sensor comprising an infrared detecting section consisting of a resistor layer having a pair of electrodes on a heat insulating film supported in a hollow state on a substrate, wherein the substrate is enclosed in a package, The internal space of the package is 1 Torr
An infrared sensor characterized by being in the following depressurized state.
がパッケージの基台上に実装され、基台のうち、空間を
隔てて赤外線検出部と対面する個所が基板の接合個所よ
りも凹んでいる赤外線センサ。2. The infrared sensor according to claim 1, wherein the substrate is mounted on a base of the package, and a portion of the base that faces the infrared detecting portion with a space is recessed from a joint of the substrates. Infrared sensor.
がパッケージの基台上に実装され、基台のうち、基板の
接合個所にスペーサが設けられ、スペーサの上に基板が
接合されている赤外線センサ。3. The infrared sensor according to claim 1, wherein the substrate is mounted on a base of the package, a spacer is provided at a joint of the base on the substrate, and the substrate is joined on the spacer. Sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4277575A JP2725965B2 (en) | 1992-10-15 | 1992-10-15 | Infrared sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4277575A JP2725965B2 (en) | 1992-10-15 | 1992-10-15 | Infrared sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06129898A true JPH06129898A (en) | 1994-05-13 |
| JP2725965B2 JP2725965B2 (en) | 1998-03-11 |
Family
ID=17585396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4277575A Expired - Lifetime JP2725965B2 (en) | 1992-10-15 | 1992-10-15 | Infrared sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2725965B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5693942A (en) * | 1995-04-07 | 1997-12-02 | Ishizuka Electronics Corporation | Infrared detector |
| JP2004361386A (en) * | 2003-02-05 | 2004-12-24 | General Electric Co <Ge> | Infrared emission-detecting device |
| US7095064B2 (en) | 2003-03-31 | 2006-08-22 | Denso Corporation | Semiconductor sensor with pressure difference adjusting means |
| JP2010175302A (en) * | 2009-01-27 | 2010-08-12 | Panasonic Electric Works Co Ltd | Infrared sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH041535A (en) * | 1990-04-18 | 1992-01-07 | Terumo Corp | Infrared sensor |
| JPH04252085A (en) * | 1991-01-28 | 1992-09-08 | Fujitsu Ltd | Thermoelectric cooling type infrared detector |
-
1992
- 1992-10-15 JP JP4277575A patent/JP2725965B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH041535A (en) * | 1990-04-18 | 1992-01-07 | Terumo Corp | Infrared sensor |
| JPH04252085A (en) * | 1991-01-28 | 1992-09-08 | Fujitsu Ltd | Thermoelectric cooling type infrared detector |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5693942A (en) * | 1995-04-07 | 1997-12-02 | Ishizuka Electronics Corporation | Infrared detector |
| JP2004361386A (en) * | 2003-02-05 | 2004-12-24 | General Electric Co <Ge> | Infrared emission-detecting device |
| US7095064B2 (en) | 2003-03-31 | 2006-08-22 | Denso Corporation | Semiconductor sensor with pressure difference adjusting means |
| JP2010175302A (en) * | 2009-01-27 | 2010-08-12 | Panasonic Electric Works Co Ltd | Infrared sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2725965B2 (en) | 1998-03-11 |
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