CN116457920A - Silicon oxide heat reflecting plate - Google Patents

Abstract

The invention aims to provide a silicon oxide heat reflecting plate which has high reflectivity, can inhibit pollution in a furnace and has long service life. The silicon oxide heat reflecting plate 100 of the present invention is a silicon oxide heat reflecting plate 100 having a silicon oxide plate 1 and a reflector 5, wherein the reflector 5 is disposed inside the silicon oxide plate 1, the outer periphery thereof is completely covered with the silicon oxide plate 1, and infrared rays incident on one surface of the silicon oxide plate 1 are reflected; and the reflector 5 is a film, a plate, or a foil, and the surface layer of the reflector 5 including at least the reflecting surface contains Ir, pt, rh, ru, re or Hf, or an alloy including at least any one selected from Ir, pt, rh, ru, re, hf and Mo.

Description

Silicon oxide heat reflecting plate

Technical Field

The present invention relates to a silicon oxide heat reflection plate which can be used as a heat reflection plate of various heat treatment apparatuses for heat-treating wafers, substrates, and the like at high temperatures in the field of semiconductor electronic components, and which has a high reflectance, and therefore can realize energy saving of the heat treatment apparatuses and can suppress contamination.

Background

In the manufacturing or processing steps of semiconductor wafers, heat treatment operations are performed in order to impart various properties to the semiconductor wafers. For example, a semiconductor wafer is stored in a furnace core tube made of high purity quartz, and a heat treatment operation is performed by controlling the atmosphere in the furnace core tube. In the heat treatment apparatus used in the heat treatment step, a heat insulator (cover) is provided between the furnace and the hearth so as to block the furnace opening in order to maintain the high temperature in the furnace and prevent heat radiation to the hearth.

As such a heat insulator, there is a heat insulator having a quartz plate which is laminated so as to close an opening of a heat treatment chamber and to be separated from each other, and which is exposed to the heat treatment chamber, and the heat insulator has the following characteristics: the quartz plate has a smooth surface and no bubbles, and a gold thin film is formed inside the quartz plate, and the gold thin film is formed by gold vapor deposition (for example, see patent document 1).

In addition, the following techniques are disclosed: a reflective surface having a thickness of, for example, 5 to 10 μm, including a resistance heating element is formed by applying a paste obtained by adding an organic substance to a mixture of platinum (Pt) and an oxide (SiO, pbO, or the like) to form a paste on a quartz plate having a hole through which a quartz tube passes and a hole through which a quartz rod passes, and baking and hardening the paste by screen printing (for example, refer to patent document 2).

A heat insulating structure of a vertical heat treatment furnace has also been disclosed which includes a plurality of pillars and a plurality of reflective heat insulating plates provided at predetermined intervals in the vertical direction on the pillars (for example, refer to patent document 3). According to patent document 3, the heat insulating plate is formed of a reflective film and a transparent quartz layer covering the surface of the reflective film. As a method of forming the heat insulating board, there are the following methods: a pair of circular transparent quartz plates forming a transparent quartz layer are used, a reflective film is provided on a surface of one side of one transparent quartz plate, the reflective film is sandwiched between the one transparent quartz plate and the other transparent quartz plate, and peripheral portions of the two transparent quartz plates are welded to seal and integrate them.

Background art literature

Patent literature

Patent document 1: japanese patent laid-open No. 2001-102319

Patent document 2: japanese patent laid-open No. 9-148315

Patent document 3: japanese patent laid-open No. 11-97360

Patent document 4: japanese patent laid-open publication No. 2019-217530

Patent document 5: japanese patent No. 4172806

Patent document 6: japanese patent No. 6032667

Disclosure of Invention

[ problem to be solved by the invention ]

In patent document 1, a gold thin film is used as a reflective film, but when heat treatment is performed at 1500 ℃ or higher, there is a problem in that the film melts or rolls up or shrinks, and there is a problem in heat resistance in practical use.

In patent document 2, a heater conduction portion is provided in the center by a quartz tube because the heater serves as a reflecting plate and a heater, but a portion where a part of radiant heat cannot be completely blocked is generated by this structure. In order to achieve higher energy saving, it is necessary to obtain a larger reflection area ratio and make the reflection plate thinner to make the heat capacity smaller.

Patent document 3 discloses a method of welding a quartz plate with a quartz plate interposed therebetween, but the method is affected by heat, and thus causes a problem of peeling of a film when the method is performed with a thin film. Further, it is difficult to maintain the inside in a vacuum, and the risk of breakage of the film due to an increase in the internal pressure during use at high temperature cannot be avoided. In addition, even in the method of manufacturing the heat insulating board by casting transparent quartz, thermal damage and physical damage cannot be avoided when the method is performed on the metal thin film.

The invention aims to provide a silicon oxide heat reflecting plate which can ensure more reflecting area ratio than the prior method, has small heat capacity, can realize energy conservation, has high reflectivity, can inhibit pollution in a furnace and has long service life.

[ means of solving the problems ]

The present inventors have made diligent studies and have found that the above problems can be solved by disposing a reflector having a surface layer containing Ir, pt, rh, ru, re, hf or Mo as a reflecting surface inside a silicon oxide plate, and have completed the present invention. That is, the silicon oxide heat reflection plate of the present invention is characterized by comprising: a silicon oxide plate; and a reflector disposed inside the silicon oxide plate, the outer periphery of which is entirely covered by the silicon oxide plate, and reflecting infrared rays incident on one surface of the silicon oxide plate; and the reflector is a film, a plate, or a foil, and a surface layer of the reflector including at least a reflecting surface contains Ir, pt, rh, ru, re, hf or Mo, or an alloy including at least any one selected from Ir, pt, rh, ru, re, hf and Mo.

In the silica heat reflection plate of the present invention, it is preferable that the silica plate has a laminated plate structure in which the 1 st silica plate and the 2 nd silica plate are disposed to face each other, and peripheral portions are joined to each other in a loop shape continuously along the peripheral edge. The silicon oxide plate and the reflector can be thinned, so that the heat capacity can be reduced.

In the silica heat reflection plate of the present invention, it is preferable that the laminated plate structure has a cavity which is provided between facing surfaces of the 1 st silica plate and the 2 nd silica plate and is sealed at least at one of the 1 st silica plate side and the 2 nd silica plate side by a joint portion between the peripheral edge portions; and the reflector is disposed in the cavity. Since the reflector is disposed in the cavity as the closed space, stress in the direction of peeling caused by the reflector is less likely to be applied to the joint between the peripheral portions, and contamination in the furnace due to breakage of the reflector can be suppressed. Further, breakage due to a difference in thermal expansion between the silicon oxide plate and the reflector can be avoided.

In the silica heat reflection plate of the present invention, it is preferable that the cavity is provided at least on the 1 st silica plate side, a thin film formed as the reflector is provided on a surface in the cavity of the 1 st silica plate, the thin film is a laminated film, the laminated film has a base film and a reflection film as a surface layer including the reflection surface in this order from the surface side in the cavity of the 1 st silica plate, the base film contains Ta, mo, ti, zr, nb, cr, W, co or Ni, or an alloy including at least one selected from Ta, mo, ti, zr, nb, cr, W, co and Ni, the reflection film contains Ir, pt, rh, ru, re, hf or Mo, or an alloy including at least one selected from Ir, pt, rh, ru, re, hf and Mo, and the base film and the reflection film have different compositions. Since the reflector is formed on the surface of the 1 st silicon oxide plate in the cavity, stress in the peeling direction due to the reflector is less likely to be applied to the joint between the peripheral portions, and contamination in the furnace due to breakage of the reflector can be suppressed. Further, breakage due to a difference in thermal expansion between the silicon oxide plate and the reflector can be avoided.

In the silica heat reflection plate of the present invention, it is preferable that the 1 st silica plate is a flat plate, the cavity is provided on the 2 nd silica plate side, a thin film formed as the reflector is provided on the surface of the 1 st silica plate, the thin film is a laminated film, the laminated film has a base film and a reflection film as a surface layer including the reflection surface in this order from the surface side of the 1 st silica plate, the base film contains Ta, mo, ti, zr, nb, cr, W, co or Ni, or includes an alloy including at least one selected from Ta, mo, ti, zr, nb, cr, W, co and Ni, the reflection film contains Ir, pt, rh, ru, re, hf or Mo, or includes an alloy including at least one selected from Ir, pt, rh, ru, re, hf and Mo, and the base film and the reflection film have different compositions. Since a thin film as a reflector is formed on the 1 st silicon oxide plate which is a flat plate, a silicon oxide heat reflecting plate excellent in productivity can be produced.

In the silica heat reflecting plate of the present invention, the reflector is preferably a plate or foil, and contains Ir, pt, rh, ru, re, hf or Mo, or an alloy containing at least one selected from Ir, pt, rh, ru, re, hf and Mo. The silicon oxide heat reflecting plate of the present invention is in a state in which a plate or foil as a reflector is accommodated in a cavity, and corrosion of the plate or foil is not likely to occur. Further, stress in the peeling direction due to the plate or foil is not easily applied to the joint portion between the peripheral portions.

In the silica heat reflecting plate of the present invention, it is preferable that the pressure in the cavity is reduced to less than atmospheric pressure. The internal pressure of the cavity can be suppressed from rising during the heat treatment, and contamination in the furnace can be further suppressed.

In the silica heat reflection plate of the present invention, it is preferable that (1) the 1 st silica plate has a bank provided at the peripheral portion and a recess surrounded by the bank to form the cavity, the 2 nd silica plate is flat-plate-shaped, or (2) the 1 st silica plate is flat-plate-shaped, and the 2 nd silica plate has a bank provided at the peripheral portion and a recess surrounded by the bank to form the cavity. By providing the 1 st silica plate with the concave portion, a cavity can be provided in the silica plate with a simple structure. Alternatively, by providing the recess in the 2 nd silica plate, a cavity can be provided in the silica plate with a simple structure.

In the silica heat reflecting plate according to the present invention, it is preferable that the silica heat reflecting plate has at least 1 pillar portion provided so as to stand between the opposed surfaces of the laminated plate structure in the cavity. The strut portions can be used to improve the bonding strength of the laminated board structure.

In the silica heat reflection plate of the present invention, the pillar portion may have a columnar shape or a tubular shape. By forming the reflector in a columnar shape or a cylindrical shape, the bonding strength can be improved, and a wider area of the reflector can be obtained.

In the silica heat reflecting plate according to the present invention, it is preferable that the silica heat reflecting plate has a plurality of the column portions, the column portions have a tubular shape, and each column portion has a three-dimensional space filling structure in which a part of a tubular wall is shared with each other. By adopting the three-dimensional space filling structure, the bonding strength can be improved, a wider reflector area can be obtained, and the strength of the reflection plate itself can be improved.

In the silica heat reflection plate of the present invention, the three-dimensional space-filling structure preferably includes a honeycomb structure, a rectangular lattice structure, a square lattice structure, or a rhombic lattice structure.

In the silica heat reflection plate of the present invention, it is preferable that the facing surfaces of the 1 st silica plate and the 2 nd silica plate are flat surfaces, the reflector is a thin film formed in an inner region of an annular joint portion between the peripheral portions of the 1 st silica plate on the 2 nd silica plate side, the thin film is a laminated film having a base film containing Ta, mo, ti, zr, nb, cr, W, co or Ni or an alloy containing at least one selected from Ta, mo, ti, zr, nb, cr, W, co and Ni or an alloy containing at least one selected from Ir, pt, rh, ru, re, hf and Mo in this order from the surface side of the 1 st silica plate, and a reflection film as a surface layer containing the reflection surface, the reflection film contains Ir, pt, rh, ru, re, hf or Mo or an alloy containing at least one selected from Ir, pt, rh, ru, re, hf and Mo, and the base film and the reflection film have different compositions. The interference fringe generated by the partial contact of the reflector and the 2 nd silicon oxide plate can be further suppressed.

In the silica heat reflection plate of the present invention, it is preferable that the cavity is provided at least on the 1 st silica plate side, and a thin film formed as the reflector is provided on the surface in the cavity of the 1 st silica plate, and the thin film is a Mo film or an alloy film containing 50 mass% or more of Mo. In the case of a Mo film or an alloy film containing 50 mass% or more of Mo, the thin film formed as a reflector may be a single-layer film.

In the silicon oxide heat reflection plate of the present invention, it is preferable that the 1 st silicon oxide plate is a flat plate, the cavity is provided on the 2 nd silicon oxide plate side, and a thin film formed as the reflector is provided on the surface of the 1 st silicon oxide plate, and the thin film is a Mo film or an alloy film containing 50 mass% or more of Mo. In the case of a Mo film or an alloy film containing 50 mass% or more of Mo, the thin film formed as a reflector may be a single-layer film.

In the silicon oxide heat reflection plate of the present invention, it is preferable that the surfaces of the 1 st silicon oxide plate and the 2 nd silicon oxide plate facing each other are flat surfaces, the reflector is a thin film, and the thin film is a Mo film or an alloy film containing 50 mass% or more of Mo, and is formed in an inner region of an annular joint portion between the peripheral edge portions on the surface of the 1 st silicon oxide plate on the 2 nd silicon oxide plate side. In the case of a Mo film or an alloy film containing 50 mass% or more of Mo, the thin film formed as a reflector may be a single-layer film.

In the silica heat reflection plate of the present invention, it is preferable that the cavity is provided on the 1 st silica plate side and the 2 nd silica plate side, and a thin film formed as the reflector is provided on the surface in the cavity of the 1 st silica plate, and the thin film is a Mo film or an alloy film containing 50 mass% or more of Mo. In the case of a Mo film or an alloy film containing 50 mass% or more of Mo, the thin film formed as a reflector may be a single-layer film.

In the silica heat reflecting plate of the present invention, the thickness of the reflector is preferably 0.01 μm or more and 5mm or less. The reflection efficiency of the reflector to radiant heat can be maintained, and the heat capacity of the silicon oxide heat reflection plate can be reduced.

In the silica heat reflection plate of the present invention, it is preferable that the joint between the peripheral portions is a surface-activated joint. By shortening the bonding width as compared with the usual welding method, the radiant heat can be further reflected into the furnace. In addition, the film as a reflector is less susceptible to thermal and physical damage by the bonding process. In addition, the bonding strength of the bonding portion is improved, the life of the silicon oxide heat reflection plate is longer, the corrosion resistance is improved, and the pollution in the furnace is suppressed.

[ Effect of the invention ]

According to the present invention, a silicon oxide heat reflection plate can be provided which can ensure a larger reflection area ratio than in the conventional method, has a small heat capacity, can realize energy saving, can suppress pollution in a furnace, and has a long life.

Drawings

Fig. 1 is a schematic plan view showing an example of a silicon oxide heat reflection plate according to the present embodiment.

FIG. 2 is a schematic view of example 1 showing a section A-A.

FIG. 3 is a schematic view of example 2 showing a section A-A.

FIG. 4 is a schematic view of example 3 showing a section A-A.

FIG. 5 is a schematic view of example 4 showing a section A-A.

FIG. 6 is a schematic view of the 5 th example showing the section A-A.

FIG. 7 is a schematic view of example 6 showing a section A-A.

FIG. 8 is a schematic view of the 7 th example showing the section A-A.

Fig. 9 is a diagram showing an example of a configuration in which the pillar portion has a honeycomb structure.

FIG. 10 is a schematic view of an example 8 showing a section A-A.

FIG. 11 is a schematic view of example 9 showing a section A-A.

FIG. 12 is a schematic view of the 10 th example of the A-A section.

FIG. 13 is a schematic view of an 11 th example of a section A-A.

FIG. 14 is a schematic view of example 12 showing a section A-A.

FIG. 15 is a schematic view of example 13 showing a section A-A.

Fig. 16 is a graph showing the reflectance of the reflector of example 1.

Fig. 17 is a graph showing the relationship between the wavelength of blackbody radiation radiated from a substance at 1000 c and the radiation amount.

Fig. 18 is a graph showing the reflectance of the reflector of example 5.

Fig. 19 is a graph showing the reflectance of the reflector of example 6.

FIG. 20 is a schematic view of example 14 showing a section A-A.

Detailed Description

The present invention will be described in detail below with reference to the embodiments, but the present invention should not be construed as being limited to these descriptions. The embodiment may be variously changed as long as the effects of the present invention are exerted.

(the reflector is in the form of a film)

The silicon oxide heat reflection plate of the present embodiment will be described with reference to fig. 1 and 2. The silicon oxide heat reflection plate 100 of the present embodiment includes: a silicon oxide plate 1; and a reflector 5 disposed inside the silicon oxide plate 1, the outer periphery of which is entirely covered with the silicon oxide plate 1, and reflecting infrared rays incident on one surface of the silicon oxide plate 1. In fig. 1, the direction toward the paper surface is the incident direction of infrared rays. In fig. 2, the direction from top to bottom is the incident direction of infrared rays. The reflector 5 is a thin film, and the surface layer of the reflector 5 including at least the reflecting surface contains Ir, pt, rh, ru, re, hf or Mo, or an alloy including at least one selected from Ir, pt, rh, ru, re, hf and Mo. Fig. 2 shows that the reflector 5 is in the form of a laminated film, and a reflective film 4 as a surface layer including a reflective surface is formed on the base film 3. In this case, the reflector 5 is preferably not provided with a through hole, a concave-convex shape, or the like, and the entire surface surrounded by the periphery of the reflector is a reflecting surface.

In the silica heat reflection plate 100, the silica plate 1 preferably has a laminated plate structure in which the 1 st silica plate 1a and the 2 nd silica plate 1b are disposed to face each other, and peripheral portions are joined to each other in a ring-like shape continuously along the peripheral edge. In fig. 2, the 1 st silica plate 1a and the 2 nd silica plate 1b form a laminated plate structure by a joint 2 between peripheral portions. As shown in fig. 1, the joint 2 between the peripheral portions is continuous in a ring shape along the peripheral edge of the silicon oxide plate 1. In fig. 1, the joint 2 between the peripheral portions can be regarded as a boundary between the 1 st silica plate 1a and the 2 nd silica plate 1b, as seen through the 2 nd silica plate 1b, and is illustrated as a gray area. By adopting the laminated plate structure, the silicon oxide plate can be thinned, and therefore the heat capacity can be made small.

The shape of the silicon oxide plate 1 when the reflector 5 is viewed from the front is, for example, a circle, an ellipse, a rectangle, or a square, and preferably a circle. The outer plate surface of the silica plate 1 when the reflector 5 is viewed from the front is preferably a flat surface without providing through holes, irregularities, or the like. The diameter of the circle is, for example, 5 to 50cm. The width of the annular shape of the joint 2 between the peripheral portions is, for example, 0.5 to 20mm. The wall thickness of the silica plate 1 is preferably 0.1 to 20mm, more preferably 0.2 to 10mm. The wall thickness of the 1 st silica plate 1a is preferably 0.05 to 10mm, more preferably 0.5 to 1.5mm. The wall thickness of the 2 nd silica plate 1b is preferably 0.05 to 10mm, more preferably 0.5 to 1.5mm.

The silicon oxide sheet 1 is comprised of a crystalline silicon oxide sheet or an amorphous silicon oxide sheet. The impurity concentration of the silica plate 1 is 100ppm or less, preferably 90ppm or less.

In the silica heat reflection plate 100, it is preferable that the laminated plate structure has a cavity 12, and the cavity 12 is provided between the facing surfaces of the 1 st silica plate 1a and the 2 nd silica plate 1b, and is sealed by the joint 2 between the peripheral edge portions on at least one of the 1 st silica plate 1a side and the 2 nd silica plate 1b side; and a reflector 5 is disposed in the cavity 12. The cavity 12 has the following form: is arranged on the 1 st silicon oxide plate 1a side; are provided on both sides of the 1 st silica plate 1a side and the 2 nd silica plate 1b side; is provided on the side of the 2 nd silica plate 1 b. Fig. 2 shows a configuration in which the cavity 12 is provided on the 1 st silica plate 1a side. In this embodiment, a recess is provided in one surface of the 1 st silica plate 1a, and the 2 nd silica plate 1b is a flat plate without a recess, and a laminated plate structure of the 1 st silica plate 1a and the 2 nd silica plate 1b is formed, so that the cavity 12 is provided on the 1 st silica plate 1a side. As a result, the cavity 12 is provided only on the 1 st silicon oxide plate 1a side of the surface of the 1 st silicon oxide plate 1a and the 2 nd silicon oxide plate 1b facing each other, and is sealed by the joint 2 between the peripheral portions. Since the reflector 5 is disposed in the cavity 12 as the closed space, stress in the direction of peeling caused by the reflector is less likely to be applied to the joint between the peripheral portions, and contamination in the furnace due to breakage of the reflector can be suppressed. Further, breakage due to a difference in thermal expansion between the silicon oxide plate and the reflector can be avoided.

Fig. 3 shows a configuration in which the cavity 12 is provided across the 1 st silicon oxide plate 1a side and the 2 nd silicon oxide plate 1b side. In this embodiment, a recess is provided in one surface of the 1 st silica plate 1a, a recess is provided in one surface of the 2 nd silica plate 1b, and the 1 st silica plate 1a and the 2 nd silica plate 1b are laminated so that the recesses are joined to each other. As a result, the cavity 12 is provided on both sides of the 1 st silicon oxide plate 1a side and the 2 nd silicon oxide plate 1b side of the surface of the 1 st silicon oxide plate 1a and the 2 nd silicon oxide plate 1b facing each other.

Fig. 4 shows a configuration in which the cavity 12 is provided on the side of the 2 nd silica plate 1 b. In this embodiment, the 1 st silica plate 1a is a flat plate without a recess, and a recess is provided in one surface of the 2 nd silica plate 1b, and the cavity 12 is provided on the 2 nd silica plate 1b side because of the laminated plate structure of the 1 st silica plate 1a and the 2 nd silica plate 1 b. As a result, the cavity 12 is provided only on the side of the 2 nd silicon oxide plate 1b of the surface of the 1 st silicon oxide plate 1a and the 2 nd silicon oxide plate 1b facing each other.

The height of the cavity 12 (length in the up-down direction in fig. 2) is preferably 0.1 μm to 5mm, more preferably 0.1 μm to 1mm. The cavity 12 has three aspects: a configuration in which a recess is provided only on the 1 st silica plate 1a side; a configuration in which concave portions are provided on both sides of the 1 st silica plate 1a side and the 2 nd silica plate 1b side; and a configuration in which a recess is provided only on the 2 nd silica plate 1b side; in either form, however, the bank 11 is formed by the recess in the peripheral edge of the 1 st silicon oxide plate 1a and/or the peripheral edge of the 2 nd silicon oxide plate 1 b. In the embodiment of fig. 2, the top surface of the bank 11 formed on the 1 st silicon oxide plate 1a is bonded to the flat plate portion of the 2 nd silicon oxide plate 1b disposed to face each other, and the bonding portion 2 between the peripheral portions is formed. In the form of fig. 3, the top surfaces of the banks 11 of the 1 st and 2 nd silicon oxide plates 1a and 1b are bonded to each other to form the bonded portions 2 of the peripheral portions. In the embodiment of fig. 4, the top surface of the bank 11 formed on the 2 nd silicon oxide plate 1b is bonded to the flat plate portion of the 1 st silicon oxide plate 1a disposed to face each other, and the bonding portion 2 between the peripheral portions is formed. The recess may be formed by etching or the like.

In the silicon oxide heat reflection plate 100 of the present embodiment, as shown in fig. 2, the 1 st silicon oxide plate 1a preferably has a bank 11 provided at the peripheral edge portion and a recess surrounded by the bank 11 to form a cavity 12, and the 2 nd silicon oxide plate 1b preferably has a flat plate shape. By providing the recess only in the 1 st silica plate 1a, the cavity 12 can be provided in the silica plate with a simple structure. The silicon oxide heat reflection plate having such a configuration includes, in addition to the one illustrated in fig. 2, the silicon oxide heat reflection plates 103, 106, 109, 112 illustrated in fig. 5, 8, 12, or 15.

In the silica heat reflection plate 102 of the present embodiment, as shown in fig. 4, the 1 st silica plate 1a is preferably in a flat plate shape, and the 2 nd silica plate 1b has a bank 11 provided at a peripheral edge portion and a recess surrounded by the bank 11 to form a cavity 12. By providing the recess only in the 2 nd silica plate 1b, the cavity 12 can be provided in the silica plate with a simple structure. The silica heat reflection plate having such a configuration includes the silica heat reflection plates 105, 108, and 111 illustrated in fig. 7, 11, and 14, in addition to the one illustrated in fig. 4.

As shown in fig. 2 and 3, in the silica heat reflection plate 100 and 101 of the present embodiment, it is preferable that at least the 1 st silica plate 1a side has a cavity 12, a thin film formed as a reflector 5 is provided on the surface inside the cavity 12 of the 1 st silica plate 1a, the thin film is a laminated film, a base film 3 and a reflection film 4 as a surface layer including a reflection surface are provided in this order from the surface side inside the cavity 12 of the 1 st silica plate 1a, the base film 3 contains Ta, mo, ti, zr, nb, cr, W, co or Ni, or an alloy containing at least one selected from Ta, mo, ti, zr, nb, cr, W, co and Ni, the reflection film 4 contains Ir, pt, rh, ru, re, hf or Mo, or an alloy containing at least one selected from Ir, pt, rh, ru, re, hf and Mo, and the base film 3 and the reflection film 4 have different compositions. Since the reflector is formed on the surface of the 1 st silicon oxide plate in the cavity, stress in the peeling direction due to the reflector is less likely to be applied to the joint between the peripheral portions, and contamination in the furnace due to breakage of the reflector can be suppressed. Further, breakage due to a difference in thermal expansion between the silicon oxide plate and the reflector can be avoided. In the case where the reflector 5 is a thin film and the thin film is a laminated film, at least a surface layer including a reflecting surface of the reflector 5 corresponds to the reflecting film 4. The reflector 5 as a laminated film is formed on the surface of the 1 st silicon oxide plate 1a in the cavity 12, i.e., on the bottom surface of the recess. The reflector 5 as the laminated film is preferably formed to have an area of 50 to 100% and more preferably 80 to 100% of the total area of the bottom surface of the recess. The thickness of the reflector 5 is preferably 10 to 1500nm, more preferably 20 to 400nm.

The base film 3 preferably contains Ta, mo, ti, zr, nb, cr, W, co or Ni, or an alloy containing at least any one selected from Ta, mo, ti, zr, nb, cr, W, co and Ni. The metal or alloy has a high melting point and excellent adhesion to the silicon oxide plate. The base film 3 is preferably, for example, a sputtered film, a coated film, or a thin film obtained by CVD (Chemical Vapor Deposition ), vapor deposition, or the like. The alloy containing at least one of Ta, mo, ti, zr, nb, cr, W, co and Ni is preferably an alloy containing any of these elements in the maximum mass, more preferably an alloy containing Ta, mo, ti, zr, nb, cr, W, co or Ni in an amount of 50 mass% or more, still more preferably an alloy containing Ta, mo, ti, zr, nb, cr, W, co or Ni in an amount of 60 mass% or more, and most preferably an alloy containing Ta, mo, ti, zr, nb, cr, W, co or Ni in an amount of 70 mass% or more, for example, a ta—mo alloy, a ta—cr alloy or a cr—co alloy. The film thickness of the base film 3 is preferably 5 to 500nm, more preferably 10 to 100nm. The base film 3 improves the adhesion of the reflection film 4.

The reflective film 4 is preferably deposited on the surface of the base film 3. The reflective film 4 preferably contains Ir, pt, rh, ru, re, hf or Mo, or an alloy containing at least one selected from Ir, pt, rh, ru, re, hf and Mo. The metal or alloy has a high melting point and a high infrared reflectance. In addition, the reactivity with the base film is low. The reflective film 4 is preferably a sputtered film, a coated film, or a film obtained by CVD, vapor deposition, or the like, for example. The alloy containing at least one of Ir, pt, rh, ru, re, hf and Mo is preferably an alloy containing any of these elements in the maximum mass, more preferably an alloy containing Ir, pt, rh, ru, re, hf or Mo in an amount of 50 mass% or more, still more preferably an alloy containing Ir, pt, rh, ru, re, hf or Mo in an amount of 60 mass% or more, and most preferably an alloy containing Ir, pt, rh, ru, re, hf or Mo in an amount of 70 mass% or more, for example, an Ir-Pt-based alloy, ir-Rh-based alloy or Pt-Ru-based alloy. The thickness of the reflective film 4 is preferably 5 to 1000nm, more preferably 10 to 300nm.

The base film 3 and the reflective film 4 are preferably a Ta film/Ir film, a Mo film/Ir film, or the like as a combination of the base film 3 and the reflective film 4 when the laminated film is formed. The thickness of the laminated film is preferably 10 to 1500nm, more preferably 20 to 400nm.

As shown in fig. 5 or 6, the thickness of the reflector 5 may be equal to the height of the cavity 12, that is, the reflective film 4 may be in contact with the surface of the 2 nd silica plate 1 b. The interference fringes generated by the partial contact of the reflective film 4 with the 2 nd silicon oxide plate are reduced. The base film 3 is preferably deposited on the surface (bottom surface of the recess) in the cavity 12 of the 1 st silicon oxide plate 1a, and the reflective film 4 is preferably deposited on the surface of the base film 3. The reflective film 4 is preferably in contact with the surface of the 2 nd silicon oxide plate 1b, but is not formed on the surface of the 2 nd silicon oxide plate 1b, i.e., is not deposited on the surface of the 2 nd silicon oxide plate 1 b.

As shown in fig. 4, in the silicon oxide heat reflection plate 102 of the present embodiment, it is preferable that the 1 st silicon oxide plate 1a is a flat plate, the 2 nd silicon oxide plate 1b side has a cavity 12, the 1 st silicon oxide plate 1a has a thin film formed as a reflector 5 on the surface thereof, the thin film is a laminated film, the thin film has a base film 3 and a reflection film 4 as a surface layer including a reflection surface in this order from the surface side of the 1 st silicon oxide plate 1a, the base film 3 contains Ta, mo, ti, zr, nb, cr, W, co or Ni, or an alloy containing at least one selected from Ta, mo, ti, zr, nb, cr, W, co and Ni, and the reflection film 4 contains Ir, pt, rh, ru, re, hf or Mo, or an alloy containing at least one selected from Ir, pt, rh, ru, re, hf and Mo. The configuration shown in fig. 4 differs from the configuration shown in fig. 2 or 3 in that the 1 st silica plate 1a is a flat plate, and the 2 nd silica plate 1b side has a cavity 12, except that the configuration is the same. Since a thin film as a reflector is formed on the 1 st silicon oxide plate 1a which is a flat plate, a silicon oxide heat reflecting plate excellent in productivity can be produced.

As shown in fig. 7, the thickness of the reflector 5 may be equal to the height of the cavity 12, that is, the reflective film 4 may be in contact with the surface (bottom surface of the recess) of the 2 nd silicon oxide plate 1 b. The interference fringes generated by the partial contact of the reflective film 4 with the 2 nd silicon oxide plate are reduced. The base film 3 is preferably deposited on the surface of the 1 st silicon oxide plate 1a, and the reflective film 4 is preferably deposited on the surface of the base film 3. The configuration shown in fig. 7 differs from the configuration shown in fig. 5 or 6 in that the 1 st silica plate 1a is a flat plate, and the 2 nd silica plate 1b side has a cavity 12, except that the configuration is the same. Since a thin film as a reflector is formed on the 1 st silicon oxide plate 1a which is a flat plate, a silicon oxide heat reflecting plate excellent in productivity can be produced.

As shown in fig. 8, 10 to 14, the silica heat reflection plates 106 to 111 of the present embodiment preferably have at least 1 pillar portion 6, and the pillar portion 6 is erected between the facing surfaces of the laminated plate structure in the cavity 12. The strut portions 6 can be used to improve the bonding strength of the laminated board structure. As shown in fig. 8 or 12, for example, the pillar portion 6 extends from the bottom surface of the recess of the 1 st silica plate 1a, and the top surface of the pillar portion 6 is joined to the surface of the 2 nd silica plate 1b in a flat plate shape. Since the pillar portion 6 extends only from the bottom surface of the recess of the 1 st silicon oxide plate 1a, the bank 11 is formed by, for example, etching only the 1 st silicon oxide plate 1a to form the recess, and in this case, the recess may be formed by making the bank 11 a non-etched portion and making the pillar portion 6 a non-etched portion similarly. As shown in fig. 10 or 13, for example, the pillar portion 6 extends from the bottom surface of the recess of the 1 st silica plate 1a, extends from the bottom surface of the recess of the 2 nd silica plate 1b, and has the top surfaces of the pillar portions 6 joined to each other. Since the pillar portion 6 extends from both the bottom surface of the recess of the 1 st silicon oxide plate 1a and the bottom surface of the recess of the 2 nd silicon oxide plate 1b, the bank portion 11 is formed by etching the 1 st silicon oxide plate 1a and the 2 nd silicon oxide plate 1b to form a recess, and in this case, the recess may be formed such that the bank portion 11 is a non-etched portion and the pillar portion 6 is a non-etched portion. Further, as shown in fig. 11 or 14, for example, the pillar portion 6 extends from the bottom surface of the recess of the 2 nd silica plate 1b, and the top surface of the pillar portion 6 is bonded to the surface of the flat 1 st silica plate 1 a. Since the pillar portion 6 extends only from the bottom surface of the recess of the 2 nd silicon oxide plate 1b, the bank 11 is formed by forming the recess by etching only the 2 nd silicon oxide plate 1b, for example, and in this case, the recess can be formed by making the pillar portion 6 a non-etched portion. In the figure, the joint 7 is shown as a joint between the pillar portion 6 and the 1 st silicon oxide plate 1a or the 2 nd silicon oxide plate 1b, or a joint between the pillar portions 6.

The reflector 5 in the silicon oxide heat reflecting plates 106 to 111 shown in fig. 8 and 10 to 14 is the same as the reflector 5 in the silicon oxide heat reflecting plates 100 to 105 shown in fig. 2 to 7. At this time, the reflector 5 formed on the outer side of the pillar portion 6 is preferably not provided with a through hole, a concave-convex portion, or the like, and the entire surface surrounded by the inner periphery of the reflector and the periphery of the reflector located on the outer side of the pillar portion 6 is a reflecting surface.

Next, the shape of the pillar portion 6 will be described. The silica heat reflection plates 106 to 111 of the present embodiment include columnar or tubular pillar portions 6. The cross-sectional shape of the principal axis of the pillar portion 6 is preferably a circle, an ellipse, or a polygon of a triangle or more. For polygons above triangles, square or regular hexagons are preferred. More preferably, as shown in fig. 9, the silica heat reflection plate has a plurality of column portions 6, the column portions 6 are cylindrical, and each column portion 6 has a three-dimensional space filling structure in which a part of the cylinder wall is shared with each other. By adopting the three-dimensional space filling structure, the bonding strength can be improved, a wider reflector area can be obtained, and the strength of the reflection plate itself can be improved. The three-dimensional space filling structure includes a form of a honeycomb structure, a rectangular lattice structure, a square lattice structure, or a diamond lattice structure. In fig. 9, a silicon oxide heat reflection plate 100 having pillar portions of honeycomb structure is illustrated. The honeycomb structure is a structure in which hexagonal cylinders are arranged without any gap, and preferably a structure in which regular hexagonal cylinders are arranged without any gap. The rectangular lattice structure is a structure in which angular columns having a rectangular cross section are arranged without gaps. The square lattice structure is a structure in which square columns having a square cross section are arranged without any gap. The diamond lattice structure is a structure in which angular columns having a diamond cross section are arranged without gaps. Here, when the reflector 5 is formed on the cylindrical inner side of the pillar portion 6 of the three-dimensional space filling structure, it is preferable that the entire surface surrounded by the periphery of the reflector located on the cylindrical inner side of the pillar portion 6 is a reflecting surface, without providing through holes, irregularities, and the like in the formed reflector 5.

In the silicon oxide heat reflection plate of the present embodiment, as shown in fig. 20, it is preferable that the surfaces of the 1 st silicon oxide plate 1a and the 2 nd silicon oxide plate 1b facing each other are flat surfaces, the reflector 5 is a thin film, a region inside the annular joint portion 2 between the peripheral portions is formed in the surface of the 1 st silicon oxide plate 1a on the 2 nd silicon oxide plate 1b side, the thin film is a laminated film, the thin film has a base film and a reflection film as a surface layer including a reflection surface in this order from the surface side of the 1 st silicon oxide plate 1a, the base film contains Ta, mo, ti, zr, nb, cr, W, co or Ni, or an alloy including at least one selected from Ta, mo, ti, zr, nb, cr, W, co and Ni, the reflection film contains Ir, pt, rh, ru, re, hf or Mo, or an alloy including at least one selected from Ir, pt, rh, ru, re, hf and Mo, and the base film and the reflection film have different compositions. In fig. 20, the reflector 5 is not shown in the form of a laminated film. The base film is preferably deposited on the surface of the 1 st silicon oxide plate, and the reflective film is preferably deposited on the surface of the base film. The reflective film is preferably in contact with the surface of the 2 nd silicon oxide plate, but is not formed on the surface of the 2 nd silicon oxide plate, i.e., is not deposited on the surface of the 2 nd silicon oxide plate. By adopting such a structure, a silicon oxide heat reflection plate excellent in productivity can be produced. Further, by further closely adhering the reflector to the 2 nd silicon oxide plate, interference fringes can be further suppressed. The thickness of the laminated film is preferably 10 to 500nm. By reducing the thickness of the laminated film, the annular joint portions between the peripheral portions can be provided by stress deformation of the 1 st silicon oxide plate and the 2 nd silicon oxide plate even if the cavity 12 is not provided, and the outer periphery of the laminated film can be completely covered with the silicon oxide plate. The reason why the metal or alloy is selected for the reflector 5 is the same as that of the silicon oxide heat reflecting plates 100 to 105 shown in fig. 2 to 7.

(form 1 of the thin film formed as the reflector is a Mo film or an alloy film containing Mo)

In the silica heat reflection plate of the present embodiment, it is preferable that at least the 1 st silica plate side has a cavity, and the surface in the cavity of the 1 st silica plate has a thin film formed as a reflector, and the thin film is a Mo film or an alloy film containing 50 mass% or more of Mo. In the case of a Mo film or an alloy film containing 50 mass% or more of Mo, the thin film formed as a reflector may be a single-layer film. In fig. 2, 5, 8, or 12, the silicon oxide heat reflection plate of the present embodiment has a structure in which the reflector 5 as a laminated film is replaced with a Mo film or an alloy film containing 50 mass% or more of Mo. In addition, as in the silicon oxide plate 1 of fig. 3, 6, 10, or 13, the cavity 12 may be provided so as to extend across both the 1 st silicon oxide plate 1a side and the 2 nd silicon oxide plate 1b side. In this embodiment, a recess is provided in one surface of the 1 st silica plate 1a, a recess is provided in one surface of the 2 nd silica plate 1b, and the 1 st silica plate 1a and the 2 nd silica plate 1b are laminated so that the recesses are joined to each other. As a result, the cavity 12 is provided on both sides of the 1 st silicon oxide plate 1a side and the 2 nd silicon oxide plate 1b side of the surface of the 1 st silicon oxide plate 1a and the 2 nd silicon oxide plate 1b facing each other. The incident direction of the infrared ray of the silica heat reflection plate of the present embodiment may be either a top-down direction or a bottom-up direction.

(form 2 of the thin film formed as the reflector is a Mo film or an alloy film containing Mo)

In the silicon oxide heat reflection plate of the present embodiment, it is preferable that the 1 st silicon oxide plate is a flat plate, the 2 nd silicon oxide plate has a cavity, and the 1 st silicon oxide plate has a thin film formed as a reflector on the surface thereof, and the thin film is a Mo film or an alloy film containing 50 mass% or more of Mo. In the case of a Mo film or an alloy film containing 50 mass% or more of Mo, the thin film formed as a reflector may be a single-layer film. In fig. 4, 7, 11, or 14, the silicon oxide heat reflection plate of the present embodiment has a structure in which the reflector 5 as a laminated film is replaced with a Mo film or an alloy film containing 50 mass% or more of Mo. The incident direction of the infrared ray of the silica heat reflection plate of the present embodiment may be either a top-down direction or a bottom-up direction.

(form 3 in which the thin film formed as the reflector is a Mo film or an alloy film containing Mo)

In the silicon oxide heat reflection plate of the present embodiment, it is preferable that the surfaces of the 1 st silicon oxide plate and the 2 nd silicon oxide plate facing each other are flat surfaces, the reflector is a thin film, and the thin film is a Mo film or an alloy film containing 50 mass% or more of Mo in a region inside the annular joint portion between the peripheral edge portions of the surface of the 1 st silicon oxide plate on the 2 nd silicon oxide plate side. In the case of a Mo film or an alloy film containing 50 mass% or more of Mo, the thin film formed as a reflector may be a single-layer film. In fig. 20, the silicon oxide heat reflection plate of the present embodiment has a structure in which the reflector 5 is replaced with a Mo film or an alloy film containing 50 mass% or more of Mo. The incident direction of the infrared ray of the silica heat reflection plate of the present embodiment may be either a top-down direction or a bottom-up direction.

(form 4 in which the thin film formed as the reflector is a Mo film or an alloy film containing Mo)

In the silicon oxide heat reflection plate of the present embodiment, it is preferable that the 1 st silicon oxide plate side and the 2 nd silicon oxide plate side have cavities, and that the surfaces in the cavities of the 1 st silicon oxide plate have thin films formed as reflectors, the thin films being Mo films or alloy films containing 50 mass% or more of Mo. In the case of a Mo film or an alloy film containing 50 mass% or more of Mo, the thin film formed as a reflector may be a single-layer film. In fig. 3, 6, 10, or 13, the silicon oxide heat reflection plate of the present embodiment has a structure in which the reflector 5 as a laminated film is replaced with a Mo film or an alloy film containing 50 mass% or more of Mo. The incident direction of the infrared ray of the silica heat reflection plate of the present embodiment may be either a top-down direction or a bottom-up direction.

In the embodiments 1 to 4, the Mo content of the Mo-containing alloy film is preferably 50 mass% or more, more preferably 60 mass% or more, and still more preferably 70 mass% or more. The Mo film or the alloy film containing 50 mass% or more of Mo is preferably formed with the same film thickness as the reflector 5 as the laminated film, and the area ratio of the thin film formed on the bottom surface of the concave portion is preferably formed with the same range as the reflector 5 as the laminated film.

In the silica heat reflection plate of the present embodiment, the joint 2 between the peripheral portions is preferably a surface-activated joint. Further, the joint 7 including the pillar portion 6 is preferably a surface-activated joint. Since the bonding can be performed at a relatively low temperature, the reflective film can be bonded without thermal and physical damages, and the bonding is performed by keeping the inside under vacuum, so that the bonding strength of the bonded portion is improved, the life of the silicon oxide heat reflective plate is longer, the corrosion resistance is improved, and contamination in the furnace is suppressed. The surface-activated joining portion refers to a portion obtained by joining surface tissues together at an atomic level by pressing and joining the joined portions after at least one of the joined portions is brought into a surface-activated state. More preferably, after both the joined portions are brought into the surface-activated state, the joined portions are joined by pressing the joined portions against each other. In the bonding of the silicon oxide plates to each other, after the silicon film is formed, the surface may be brought into an activated state, and then the bonding portions may be bonded by pressing them against each other. The surface-activated bonding portion includes a room temperature-activated bonding portion and a plasma-activated bonding portion. The room temperature activated joint includes, for example: the bonding portion is formed by forming a nano-adhesion layer using an active metal such as Si, and the bonding portion is formed by activating the surface by an ion beam. The plasma activated bond includes, for example: a bonding portion bonded by activating the surface with oxygen plasma, and a bonding portion bonded by activating the surface with nitrogen plasma. By making the joint 2 between the peripheral portions be a surface activated joint, leakage at the joint can be reduced, and breakage of the silicon oxide plate due to an increase in internal pressure at high temperature can be prevented by, for example, holding the cavity in vacuum. For example, patent documents 4 to 6 refer to a method of forming a surface-activated bonding portion.

In the silica heat reflection plate of the present embodiment, the pressure in the cavity 12 is preferably reduced to be less than the atmospheric pressure. The pressure in the cavity 12 is more preferably 10 ^-2 Pa or below. The increase in the internal pressure of the cavity 12 can be suppressed during the heat treatment, and contamination in the furnace can be further suppressed. In addition, can inhibitDegradation of the reflective film at high temperatures.

(the reflector is in the form of a plate)

In the silicon oxide heat reflection plate 112 of the present embodiment, as shown in fig. 15, the reflector 8 is preferably a plate and contains Ir, pt, rh, ru, re, hf or Mo or an alloy containing at least one selected from Ir, pt, rh, ru, re, hf and Mo. The alloy containing at least one of Ir, pt, rh, ru, re, hf and Mo is preferably an alloy containing any of these elements in the maximum mass, more preferably an alloy containing Ir, pt, rh, ru, re, hf or Mo in an amount of 50 mass% or more, still more preferably an alloy containing Ir, pt, rh, ru, re, hf or Mo in an amount of 60 mass% or more, and most preferably an alloy containing Ir, pt, rh, ru, re, hf or Mo in an amount of 70 mass% or more, for example, an Ir-Pt-based alloy, ir-Rh-based alloy or Pt-Ru-based alloy. The plate as a reflector is accommodated in the cavity 12, and the plate is not easily corroded. Further, stress in the direction of peeling caused by the plate is not easily applied to the joint portion between the peripheral portions. The reflector 8 as a plate is preferably formed to have an area of 50 to 100% with respect to the total area of the bottom surface of the concave portion, and more preferably formed to have an area of 80 to 100%.

(the reflector is in the form of a foil)

In the silicon oxide heat reflection plate of the present embodiment, the reflector is preferably a foil, and contains Ir, pt, rh, ru, re, hf or Mo, or an alloy (not shown) containing at least one selected from Ir, pt, rh, ru, re, hf and Mo. The alloy containing at least one of Ir, pt, rh, ru, re, hf and Mo is preferably an alloy containing any of these elements in the maximum mass, more preferably an alloy containing Ir, pt, rh, ru, re, hf or Mo in an amount of 50 mass% or more, still more preferably an alloy containing Ir, pt, rh, ru, re, hf or Mo in an amount of 60 mass% or more, and most preferably an alloy containing Ir, pt, rh, ru, re, hf or Mo in an amount of 70 mass% or more, for example, an Ir-Pt-based alloy, ir-Rh-based alloy or Pt-Ru-based alloy. Fig. 15 shows the following states: the reflector 8, which is a foil rather than a plate, is accommodated in the cavity 12, and the foil is less susceptible to corrosion. Further, stress in the direction of peeling caused by the foil is not easily applied to the joint between the peripheral portions. The reflector of the foil is preferably formed to have an area of 50 to 100% of the total area of the bottom surface of the recess, and more preferably to have an area of 80 to 100%.

In the silica heat reflection plate of the present embodiment, the thickness of the reflector is preferably 0.01 μm to 5mm, more preferably 0.02 μm to 2mm. The high reflection efficiency of the reflector can be maintained, and the heat capacity of the silicon oxide heat reflection plate can be reduced. If the thickness of the reflector is less than 0.01 μm, it may be difficult to maintain the reflection efficiency, and if it exceeds 5mm, the heat of the reflector may become excessive. When the reflector is a thin film, the thickness of the laminated film is preferably 10nm to 1500nm, more preferably 20nm to 400 nm. When the reflector is a plate, the plate thickness is preferably 0.5mm to 5.0mm, more preferably 0.5mm to 2.0 mm. When the reflector is a foil, the thickness of the foil is preferably 3 μm or more and 2.0mm or less, more preferably 8 μm or more and 1.0mm or less.

In the present embodiment, when the cavity is provided, a value obtained by subtracting the thickness of the reflector from the height of the cavity (the length in the vertical direction in fig. 2), that is, a gap in the height direction in the cavity is preferably 200 μm or less, more preferably 100 μm or less. When the gap in the height direction in the cavity exceeds 200 μm, the deformation of the silicon oxide plate due to the atmospheric pressure becomes large, and as a result, the stress applied to the vicinity of the joint portion becomes large, and there is a concern that the joint portion may be broken.

In fig. 2 to 8 and 10 to 14, the incident direction of the infrared ray is from top to bottom. In fig. 15, the incident direction of the infrared ray may be either a top-down direction or a bottom-up direction.

Examples

Hereinafter, the present invention will be described in further detail by way of examples, but the present invention should not be construed as being limited to the examples.

Example 1

(the reflector is in the form of a laminate film)

The silicon oxide heat reflection plate shown in fig. 2 was produced. First, 2 silicon oxide plates having an outer periphery of 300mm and a thickness of 1.2mm were prepared as a 1 st silicon oxide plate and a 2 nd silicon oxide plate, respectively. Next, a portion of the 1 st silicon oxide plate having a width of 10mm from the outer periphery was left as a joint portion with the 2 nd silicon oxide plate, and the other portion was etched to form a recess having a depth of 1 μm. Next, ta was formed as a base film by sputtering at 50nm on the bottom surface of the recess of the 1 st silicon oxide plate, and Ir was formed as a reflective film by sputtering at 150nm on the base film, thereby forming a reflector. Then, the reflectance of the reflector was measured using an ultraviolet-visible spectrophotometer (model: UV-3100PC manufactured by Shimadzu corporation). The results of the measured reflectances are shown in fig. 16. The measurement is performed by directly irradiating the surface of the reflector with light for measurement. Further, the relationship between the wavelength of the blackbody radiation irradiated by the substance at 1000 ℃ and the amount of radiation was calculated using (number 1). The calculation result is shown in fig. 17.

[ number 1]

Where h is the Planck constant (6.62607015 ×10 ^-34 J·s)，k _B Is Boltzmann constant (1.380649 ×10) ^-23 J/K), c is the speed of light (299792458 m/s), and λ is the wavelength (nm). From the results of FIG. 17, it was confirmed that the amount of radiation was large when the wavelength was 2000nm to 2600nm, since the reflected radiation heat was required at 1000 ℃. Further, it was confirmed from the results of FIG. 16 that the reflector of the present example had a reflectance of 90% or more at a wavelength of 2000nm or more at 1000 ℃. Next, in order to join the 1 st silicon oxide plate on which the reflector is formed with the 2 nd silicon oxide plate in a flat plate shape, the vacuum degree is 10 ^-2 In a vacuum of Pa or less, a high-speed atomic beam is irradiated to the joint portion of the 1 st silicon oxide plate to activate the surface, and the 2 nd silicon oxide plate is pressed against the 1 st silicon oxide plate, thereby producing a silicon oxide heat reflection plate.

Example 2

(the reflector is in the form of a laminate film)

First, 2 silicon oxide plates having an outer periphery of 300mm and a thickness of 1.2mm were prepared as a 1 st silicon oxide plate and a 2 nd silicon oxide plate, respectively. Splicing jointThe portion having a width of 5mm from the outer periphery of the 1 st silicon oxide plate was masked as a joint with the 2 nd silicon oxide plate. Next, ta was formed as a base film by sputtering on the surface of the 1 st silicon oxide plate to be masked, and Ir was formed as a reflective film by sputtering on the base film to be 150 nm. Then, the masking is removed. The reflector has the same characteristics as those of the reflector of example 1 and the reflection characteristics shown in fig. 16. Next, in order to join the 1 st silica plate having the reflector formed thereon and the 2 nd silica plate having the flat plate shape, the vacuum degree was 10 ^-2 In a vacuum of Pa or less, a high-speed atomic beam is irradiated to the joint portion of the 1 st silicon oxide plate to activate the surface, and the 2 nd silicon oxide plate is pressed against the 1 st silicon oxide plate, thereby producing a silicon oxide heat reflection plate.

Example 3

(the reflector is in the form of a laminate film)

First, 2 silicon oxide plates having an outer periphery of 300mm and a thickness of 1.2mm were prepared as a 1 st silicon oxide plate and a 2 nd silicon oxide plate, respectively. Next, a portion having a width of 5mm from the outer periphery of the 1 st silicon oxide plate was masked as a joint with the 2 nd silicon oxide plate. Next, ta was formed as a base film by sputtering on the surface of the 1 st silicon oxide plate to be masked, and Ir was formed as a reflective film by sputtering on the base film to be masked by 150 nm. Then, the masking is removed. The reflector has the same characteristics as those of the reflector of example 1 and the reflection characteristics shown in fig. 16. Next, in order to join the 1 st silicon oxide plate having a flat plate shape and the 2 nd silicon oxide plate having a flat plate shape, oxygen plasma is brought into contact with the joint portion of the 1 st silicon oxide plate to activate the surface, and the 2 nd silicon oxide plate is pressed against the 1 st silicon oxide plate, thereby producing a silicon oxide heat reflection plate.

Example 4

(the reflector is a laminated film and has a honeycomb-shaped pillar portion)

A silicon oxide heat reflection plate shown in fig. 12 was produced. First, 2 silicon oxide plates having an outer periphery of 300mm and a thickness of 1.2mm were prepared as a 1 st silicon oxide plate and a 2 nd silicon oxide plate, respectively. Next, from 1 stThe outer periphery of the silicon oxide plate was masked at a portion having a width of 10mm, and then, at other portions, a honeycomb-shaped portion corresponding to the pillar portion having a width of 10mm (a length of one side is 5.77 mm) of the regular hexagon and a wall pillar thickness of 0.3mm was masked, and then, etching was performed to provide recesses for forming cavities having a depth of 1 μm. Next, ta was formed by sputtering to a bottom surface of the recess of the 1 st silicon oxide plate, which was masked, to a thickness of 50nm as a base film, and Ir was formed by sputtering to a thickness of 150nm as a reflective film on the base film, thereby forming a reflector. Then, the masking is removed. The reflector of this embodiment has a honeycomb structure as compared to the reflector of embodiment 1. The reflectance shown in fig. 16 shows a value in which the entire surface is in the form of a reflective film, and regarding the reflective film having a honeycomb structure of this example, the area ratio of the reflective film portion to the entire surface is 94.34%, and therefore, it is considered that the reflectance characteristic of this example has a reflectance obtained by multiplying the reflectance shown in fig. 16 by 0.9434. Next, in order to join the 1 st silicon oxide plate on which the reflector is formed with the 2 nd silicon oxide plate in a flat plate shape, the vacuum degree is 10 ^-2 In a vacuum of Pa or less, the joint portion 2 and the pillar portion of the 1 st silicon oxide plate are irradiated with a high-speed atomic beam to activate the surface, and the 2 nd silicon oxide plate is pressed against the 1 st silicon oxide plate, whereby they are joined to produce a silicon oxide heat reflection plate.

Example 5

(the reflector is in the form of Pt foil)

The silicon oxide heat reflection plate shown in fig. 15 was produced. First, 2 silicon oxide plates having an outer periphery of 300mm and a thickness of 1.2mm were prepared as a 1 st silicon oxide plate and a 2 nd silicon oxide plate, respectively. Next, a portion 7mm wide from the outer periphery of the 1 st silicon oxide plate was left as a joint with the 2 nd silicon oxide plate, and the other portion was subjected to cutting processing, and a recess portion was provided to form a cavity with a depth of 0.2 mm. Next, a Pt foil having an outer periphery of 284mm and a thickness of 100 μm was disposed on the bottom surface of the recess of the 1 st silica plate to form a reflector. Then, the reflectance of the reflector was measured using an ultraviolet-visible spectrophotometer (model: UV-3100PC manufactured by Shimadzu corporation). The measured reflectivities are shown in fig. 18. The measurement is to make the surface of the reflector straightThe measurement is performed by irradiation with light. From the results of fig. 18, it was confirmed that the reflector of this example had a reflectance of 80% or more at a wavelength of 2000nm or more at 1000 ℃. Next, in order to join the 1 st silicon oxide plate on which the reflector is disposed with the 2 nd silicon oxide plate in a flat plate shape, the vacuum degree is 10 ^-2 In a vacuum of Pa or less, a high-speed atomic beam is irradiated to the joint portion of the 1 st silicon oxide plate to activate the surface, and the 2 nd silicon oxide plate is pressed against the 1 st silicon oxide plate, whereby they are joined to produce a silicon oxide heat reflection plate.

Example 6

(the reflector is in the form of a Mo film)

First, 2 silicon oxide plates having an outer periphery of 300mm and a thickness of 1.2mm were prepared as a 1 st silicon oxide plate and a 2 nd silicon oxide plate, respectively. Next, a portion having a width of 5mm from the outer periphery of the 1 st silicon oxide plate was masked as a joint with the 2 nd silicon oxide plate. Next, mo was formed into a film of 200nm on the surface of the 1 st silicon oxide plate to be masked by sputtering to form a reflector. Then, the masking is removed. Then, the reflectance of the reflector was measured using an ultraviolet-visible spectrophotometer (model: UV-3100PC manufactured by Shimadzu corporation). The results of the measured reflectances are shown in fig. 19. The measurement is performed by directly irradiating the surface of the reflector with light for measurement. Further, it was confirmed from the results of FIG. 19 that the reflector of the present example had a reflectance of 80% or more at a wavelength of 2000nm or more at 1000 ℃. Next, in order to join the 1 st silicon oxide plate on which the reflector is formed with the 2 nd silicon oxide plate in a flat plate shape, the vacuum degree is 10 ^-2 In a vacuum of Pa or less, a high-speed atomic beam is irradiated to the joint portion of the 1 st silicon oxide plate to activate the surface, and the 2 nd silicon oxide plate is pressed against the 1 st silicon oxide plate, thereby producing a silicon oxide heat reflection plate.

[ description of symbols ]

100-112 silicon oxide heat reflecting plate

1. Silicon oxide plate

1a 1 st silica plate

1b No. 2 silica plate

2. Joint between peripheral edge parts

3. Base film

4. Reflective film

5. Reflector

6. Pillar portion

7. Joint part including pillar part

8. Reflector

11. Dyke part

12. A cavity.

Claims (19)

1. A silicon oxide heat reflection plate is characterized by comprising:

a silicon oxide plate; a kind of electronic device with high-pressure air-conditioning system

A reflector disposed inside the silicon oxide plate, the outer periphery of which is entirely covered by the silicon oxide plate, and reflecting infrared rays incident on one surface of the silicon oxide plate; and is also provided with

The reflector is a film, plate or foil,

the surface layer of the reflector, which includes at least a reflecting surface, contains Ir, pt, rh, ru, re, hf or Mo, or an alloy containing at least one selected from Ir, pt, rh, ru, re, hf and Mo.

2. The silicon oxide heat reflection plate according to claim 1, wherein the silicon oxide plate has a laminated plate structure in which a 1 st silicon oxide plate and a 2 nd silicon oxide plate are arranged to face each other, and peripheral edge portions are joined to each other in a ring-like shape continuously along the peripheral edge.

3. The silicon oxide heat reflection plate according to claim 2, wherein the laminated plate structure has a cavity which is provided between facing surfaces of the 1 st silicon oxide plate and the 2 nd silicon oxide plate and is sealed at least one of the 1 st silicon oxide plate side and the 2 nd silicon oxide plate side by a joint portion of the peripheral edge portions with each other; and is also provided with

The reflector is disposed in the cavity.

4. A silicon oxide heat reflecting plate according to claim 3, wherein the cavity is provided at least on the 1 st silicon oxide plate side,

a thin film formed as the reflector is provided on the surface of the 1 st silicon oxide plate within the cavity,

the thin film is a laminated film comprising, in order from the surface side in the cavity of the 1 st silicon oxide plate, a base film and a reflective film as a surface layer including the reflective surface,

the base film contains Ta, mo, ti, zr, nb, cr, W, co or Ni, or an alloy containing at least any one selected from Ta, mo, ti, zr, nb, cr, W, co and Ni,

the reflective film contains Ir, pt, rh, ru, re, hf or Mo, or an alloy containing at least one selected from Ir, pt, rh, ru, re, hf and Mo,

The base film and the reflection film have different compositions.

5. A silicon oxide heat reflection plate according to claim 3, wherein the 1 st silicon oxide plate is a flat plate,

the cavity is arranged on the side of the 2 nd silicon oxide plate,

a thin film formed as the reflector is provided on the surface of the 1 st silicon oxide plate,

the film is a laminated film having a base film and a reflective film as a surface layer including the reflective surface in this order from the surface side of the 1 st silicon oxide plate,

the base film contains Ta, mo, ti, zr, nb, cr, W, co or Ni, or an alloy containing at least any one selected from Ta, mo, ti, zr, nb, cr, W, co and Ni,

the reflective film contains Ir, pt, rh, ru, re, hf or Mo, or an alloy containing at least one selected from Ir, pt, rh, ru, re, hf and Mo,

the base film and the reflection film have different compositions.

6. A silicon oxide heat reflecting plate according to claim 3, wherein the reflector is a plate or foil and contains Ir, pt, rh, ru, re, hf or Mo or comprises an alloy containing at least any one selected from Ir, pt, rh, ru, re, hf and Mo.

7. The silicon oxide heat reflection plate according to any one of claims 3 to 6, wherein the pressure inside the cavity is reduced to be less than atmospheric pressure.

8. The silica heat reflection plate according to any one of claims 3 to 7, wherein (1) the 1 st silica plate has a bank provided at the peripheral portion and a recess surrounded by the bank to constitute the cavity, and the 2 nd silica plate is flat plate-like, or,

(2) The 1 st silicon oxide plate is a flat plate, and the 2 nd silicon oxide plate has a bank provided at the peripheral edge portion and a recess surrounded by the bank to form the cavity.

9. The silica heat reflector plate according to at least any one of claims 3 to 8, wherein the silica heat reflector plate has at least 1 pillar portion that is disposed upright within the cavity between opposing faces of the laminate construction.

10. The silicon oxide heat reflection plate according to claim 9, wherein the pillar portion is columnar or cylindrical.

11. The silica heat reflecting plate according to claim 10, wherein the silica heat reflecting plate has a plurality of the pillar portions,

the pillar portion is cylindrical, and each pillar portion has a three-dimensional space filling structure in which a part of the cylindrical wall is shared with each other.

12. The silica heat reflection plate according to claim 11, wherein the three-dimensional space filling structure is a honeycomb structure, a rectangular lattice structure, a square lattice structure, or a diamond lattice structure.

13. The silica heat reflection plate according to claim 2, wherein facing surfaces of the 1 st silica plate and the 2 nd silica plate are each flat surfaces,

the reflector is a film formed in an inner region of an annular joint portion between the peripheral edge portions of the surface of the 1 st silicon oxide plate on the 2 nd silicon oxide plate side,

the film is a laminated film having a base film and a reflective film as a surface layer including the reflective surface in this order from the surface side of the 1 st silicon oxide plate,

the base film contains Ta, mo, ti, zr, nb, cr, W, co or Ni, or an alloy containing at least any one selected from Ta, mo, ti, zr, nb, cr, W, co and Ni,

the reflective film contains Ir, pt, rh, ru, re, hf or Mo, or an alloy containing at least one selected from Ir, pt, rh, ru, re, hf and Mo,

the base film and the reflection film have different compositions.

14. A silicon oxide heat reflecting plate according to claim 3, which has the cavity at least on the 1 st silicon oxide plate side,

A thin film formed as the reflector is provided on the surface of the 1 st silicon oxide plate within the cavity,

the film is a Mo film or an alloy film containing 50 mass% or more of Mo.

15. A silicon oxide heat reflection plate according to claim 3, wherein the 1 st silicon oxide plate is a flat plate,

the cavity is arranged on the side of the 2 nd silicon oxide plate,

a thin film formed as the reflector is provided on the surface of the 1 st silicon oxide plate,

the film is a Mo film or an alloy film containing 50 mass% or more of Mo.

16. The silica heat reflection plate according to claim 2, wherein facing surfaces of the 1 st silica plate and the 2 nd silica plate are each flat surfaces,

the reflector is a film formed in an inner region of an annular joint portion between the peripheral edge portions of the surface of the 1 st silicon oxide plate on the 2 nd silicon oxide plate side,

the film is a Mo film or an alloy film containing 50 mass% or more of Mo.

17. A silicon oxide heat reflection plate according to claim 3, wherein the cavity is provided on the 1 st silicon oxide plate side and the 2 nd silicon oxide plate side,

a thin film formed as the reflector is provided on the surface of the 1 st silicon oxide plate within the cavity,

The film is a Mo film or an alloy film containing 50 mass% or more of Mo.

18. The silicon oxide heat reflecting plate according to any one of claims 1 to 17, wherein a thickness of the reflector is 0.01 μm or more and 5mm or less.

19. The silicon oxide heat reflection plate according to any one of claims 3 to 18, wherein the joining portions of the peripheral portions to each other are surface-activated joining portions.