JPS57122515A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57122515A JPS57122515A JP881581A JP881581A JPS57122515A JP S57122515 A JPS57122515 A JP S57122515A JP 881581 A JP881581 A JP 881581A JP 881581 A JP881581 A JP 881581A JP S57122515 A JPS57122515 A JP S57122515A
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- substrate
- boron nitride
- main faces
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000001681 protective effect Effects 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052582 BN Inorganic materials 0.000 abstract 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 238000005247 gettering Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To produce desired wafers by forming impurity diffusion regions for gettering in advance of formation of elements on semiconductor substrate. CONSTITUTION:A boron nitride film 3 is formed by gaseous phase chemical reaction, and a protective film 4 of silicon oxide or the like is successively formed on the boron nitride film 3 on the second side (reverse side) of a substrate 1 on which a protective film 2 has been coated on the first side of the main faces. A highly concentrated boron diffusion region 5 is then produced on the first side of the main faces of the substrate 1 by heat treatment of the substrate 1 at a temperature of maximum solid solubility. Next, the protective film 2 on the first side is removed with the protective film 4 on the second side remaining as it is. This process allows reduction in crystallographical defects caused in the process of the manufacture or generation and recombination centers of conduction charges resulting from contamination.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP881581A JPS57122515A (en) | 1981-01-22 | 1981-01-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP881581A JPS57122515A (en) | 1981-01-22 | 1981-01-22 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57122515A true JPS57122515A (en) | 1982-07-30 |
Family
ID=11703307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP881581A Pending JPS57122515A (en) | 1981-01-22 | 1981-01-22 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57122515A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5142350A (en) * | 1990-07-16 | 1992-08-25 | General Motors Corporation | Transistor having cubic boron nitride layer |
US5227318A (en) * | 1989-12-06 | 1993-07-13 | General Motors Corporation | Method of making a cubic boron nitride bipolar transistor |
US5232862A (en) * | 1990-07-16 | 1993-08-03 | General Motors Corporation | Method of fabricating a transistor having a cubic boron nitride layer |
US5279869A (en) * | 1989-12-06 | 1994-01-18 | General Motors Corporation | Laser deposition of cubic boron nitride films |
US5330611A (en) * | 1989-12-06 | 1994-07-19 | General Motors Corporation | Cubic boron nitride carbide films |
-
1981
- 1981-01-22 JP JP881581A patent/JPS57122515A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5227318A (en) * | 1989-12-06 | 1993-07-13 | General Motors Corporation | Method of making a cubic boron nitride bipolar transistor |
US5279869A (en) * | 1989-12-06 | 1994-01-18 | General Motors Corporation | Laser deposition of cubic boron nitride films |
US5330611A (en) * | 1989-12-06 | 1994-07-19 | General Motors Corporation | Cubic boron nitride carbide films |
US5142350A (en) * | 1990-07-16 | 1992-08-25 | General Motors Corporation | Transistor having cubic boron nitride layer |
US5232862A (en) * | 1990-07-16 | 1993-08-03 | General Motors Corporation | Method of fabricating a transistor having a cubic boron nitride layer |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ES449145A1 (en) | Elimination of stacking faults in silicon devices: a gettering process | |
US3510369A (en) | Selective diffusion masking process | |
JPS56135969A (en) | Manufacture of semiconductor device | |
JPS57122515A (en) | Manufacture of semiconductor device | |
JPS5659694A (en) | Manufacture of thin film | |
US3718503A (en) | Method of forming a diffusion mask barrier on a silicon substrate | |
US4029528A (en) | Method of selectively doping a semiconductor body | |
JPS5478970A (en) | Diffusion method for impurity | |
JPS52129373A (en) | Heat treatment method for silicon wafers | |
JPS644019A (en) | Manufacture of semiconductor device | |
JPS5244169A (en) | Process for production of semiconductor device | |
JPS53137678A (en) | Manufacture for mos type semiconductor device | |
JPH03173131A (en) | Manufacture of semiconductor device | |
JPS5323559A (en) | Production of compound semiconductor | |
JPS5244163A (en) | Process for productin of semiconductor element | |
JPS5667966A (en) | Semiconductor device and preparation method thereof | |
JPS57124427A (en) | Manufacture of semiconductor device | |
JPS5240967A (en) | Method of diffusing impurities in compund semiconductor | |
JPS5236977A (en) | Semiconductor heating furnace tube and process for production of same | |
JPS54128268A (en) | Multi-diffusion method of impurity | |
JPS5353961A (en) | Production of semiconductor wafer | |
JPS5258460A (en) | Diffusion of impurity into semiconductor wafer from solid impurity dif fusion source | |
JPS5555524A (en) | Method of manufacturing semiconductor device | |
JPS54102965A (en) | Impurity diffusion method | |
JPS5745227A (en) | Manufacture of semiconductor device |