JPH03173131A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH03173131A
JPH03173131A JP31063189A JP31063189A JPH03173131A JP H03173131 A JPH03173131 A JP H03173131A JP 31063189 A JP31063189 A JP 31063189A JP 31063189 A JP31063189 A JP 31063189A JP H03173131 A JPH03173131 A JP H03173131A
Authority
JP
Japan
Prior art keywords
wafer
layer
oxide film
boron
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31063189A
Other languages
Japanese (ja)
Inventor
Noboru Tatefuru
Keizo Inaba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP31063189A priority Critical patent/JPH03173131A/en
Publication of JPH03173131A publication Critical patent/JPH03173131A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To restrain a crystal defect of a semiconductor element from being produced by a method wherein a high-concentration diffusion layer of impurities forming a second conductivity type or a semiconductor layer containing impurities is formed, as a getter layer, on a second main face on the opposite side of a semiconductor substrate.
CONSTITUTION: A thermal oxide film 2 is formed on an n-type Si wafer 1 in an atmosphere. In a state that the surface of the wafer is covered with a photoresist, the wafer is treated with an HF-based etchant; the oxide film on the rear side of the wafer is removed. In succession, boron is deposited and diffused; a boron silicide layer 7 and a high-concentration diffusion layer 8 are formed on the rear of the wafer. After B has been diffused to the rear of the wafer, a window is opened in one part of the oxide film 2 on the surface by using a photoresist mask 3; ions of boron are implanted through an opening part 4; a p-type impurity deposition layer 5 is formed. Then, the photoresist mask 3 is removed by a plasma ashing method and an ozone sulfuric acid method. The layer is etched and cleaned; a well region 6 is formed by a diffusion treatment in an oxidizing atmosphere.
COPYRIGHT: (C)1991,JPO&Japio
JP31063189A 1989-12-01 1989-12-01 Manufacture of semiconductor device Pending JPH03173131A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31063189A JPH03173131A (en) 1989-12-01 1989-12-01 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31063189A JPH03173131A (en) 1989-12-01 1989-12-01 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH03173131A true JPH03173131A (en) 1991-07-26

Family

ID=18007581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31063189A Pending JPH03173131A (en) 1989-12-01 1989-12-01 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH03173131A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5360748A (en) * 1992-01-24 1994-11-01 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device
JP2004327489A (en) * 2003-04-21 2004-11-18 Shin Etsu Handotai Co Ltd Single-crystal silicon wafer and its manufacturing method
US8329563B2 (en) 2006-02-24 2012-12-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including a gettering layer and manufacturing method therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5360748A (en) * 1992-01-24 1994-11-01 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device
JP2004327489A (en) * 2003-04-21 2004-11-18 Shin Etsu Handotai Co Ltd Single-crystal silicon wafer and its manufacturing method
US8329563B2 (en) 2006-02-24 2012-12-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including a gettering layer and manufacturing method therefor

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