JPS5618485A - Manufacture of semiconductor laser element - Google Patents

Manufacture of semiconductor laser element

Info

Publication number
JPS5618485A
JPS5618485A JP9477579A JP9477579A JPS5618485A JP S5618485 A JPS5618485 A JP S5618485A JP 9477579 A JP9477579 A JP 9477579A JP 9477579 A JP9477579 A JP 9477579A JP S5618485 A JPS5618485 A JP S5618485A
Authority
JP
Japan
Prior art keywords
substrate
electrode
oxide film
anode oxide
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9477579A
Other languages
Japanese (ja)
Other versions
JPS6237831B2 (en
Inventor
Hirokazu Fukuda
Koji Shinohara
Mitsuo Yoshikawa
Michiharu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9477579A priority Critical patent/JPS5618485A/en
Publication of JPS5618485A publication Critical patent/JPS5618485A/en
Publication of JPS6237831B2 publication Critical patent/JPS6237831B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers

Abstract

PURPOSE:To improve the adhesion between a substrate and an electrode in a semiconductor laser element by forming the surface of an Au electrode on an anode oxide film becoming an insulating film in flat and smooth state without rugged state. CONSTITUTION:A buffer layer 2, an active layer 3 and a top layer 4 are formed by liquid phase epitaxial process on a PbTe substrate 1. Thereafter, the substrate is mesa etched in predetermined size, the contact portion A between the substrate and the electrode is then removed to form an anode oxide film 7 on the surface of the substrate. Then, the substrate formed with the film 7 is heated in nitrogen or argon gas atmosphere of high purity. In this manner, the anode oxide film 7 becomes dense.
JP9477579A 1979-07-24 1979-07-24 Manufacture of semiconductor laser element Granted JPS5618485A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9477579A JPS5618485A (en) 1979-07-24 1979-07-24 Manufacture of semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9477579A JPS5618485A (en) 1979-07-24 1979-07-24 Manufacture of semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS5618485A true JPS5618485A (en) 1981-02-21
JPS6237831B2 JPS6237831B2 (en) 1987-08-14

Family

ID=14119465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9477579A Granted JPS5618485A (en) 1979-07-24 1979-07-24 Manufacture of semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS5618485A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60142583A (en) * 1983-12-29 1985-07-27 Fujitsu Ltd Manufacture of pbsnte laser
US11655421B2 (en) 2016-12-23 2023-05-23 Carbon Engineering Ltd. Method and system for synthesizing fuel from dilute carbon dioxide source

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5428584A (en) * 1977-08-05 1979-03-03 Fujitsu Ltd Manufacture of semiconductor laser element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5428584A (en) * 1977-08-05 1979-03-03 Fujitsu Ltd Manufacture of semiconductor laser element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60142583A (en) * 1983-12-29 1985-07-27 Fujitsu Ltd Manufacture of pbsnte laser
US11655421B2 (en) 2016-12-23 2023-05-23 Carbon Engineering Ltd. Method and system for synthesizing fuel from dilute carbon dioxide source

Also Published As

Publication number Publication date
JPS6237831B2 (en) 1987-08-14

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