GB1535061A - Gallium arsenide photocathode - Google Patents

Gallium arsenide photocathode

Info

Publication number
GB1535061A
GB1535061A GB5142675A GB5142675A GB1535061A GB 1535061 A GB1535061 A GB 1535061A GB 5142675 A GB5142675 A GB 5142675A GB 5142675 A GB5142675 A GB 5142675A GB 1535061 A GB1535061 A GB 1535061A
Authority
GB
United Kingdom
Prior art keywords
layer
gaas
substrate
etching
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5142675A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB5142675A priority Critical patent/GB1535061A/en
Publication of GB1535061A publication Critical patent/GB1535061A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)

Abstract

1535061 Making gallium arsenide photocathodes STANDARD TELEPHONES & CABLES Ltd 16 Dec 1975 51426/75 Heading HID A gallium arsenide field emission photocathode is made by bombarding a layer of p-type GaAs with protons to form a grid pattern of semiinsulating material 24 therein, and preferentially etching the material 24 by a cathodic inhibition process in a chemical etching solution with the p-type material 25 negatively electrically biased, whereby the GaAs layer is left with a figured surface having an array of field emission points. The proton bombardment may be done using a finely focused beam to write in the grid pattern, or, as shown, using a mask which includes a partly etched gold layer 23 above the GaAs layer. Initially the GaAs layer is epitaxially grown on a temporary substrate of semiconductor, e.g. also GaAs, and the layer is then bonded to a permanent substrate 15 of glass, by heating the components and pressing them together. The semiconductor substrate is then removed by etching; this may be a cathodic inhibition process as previously defined, if the substrate is semi-insulating; or, if the substrate is p-type, an anodic electrochemical etching process may be used, either in conjunction with monitoring of the optical transmission and thereby the thickness of the material to determine when to stop etching, or using an n-type blocking layer to stop the etch, which layer is then removed by chemical etching; the GaAs layer is thus exposed ready for the proton bombardment.
GB5142675A 1975-12-16 1975-12-16 Gallium arsenide photocathode Expired GB1535061A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB5142675A GB1535061A (en) 1975-12-16 1975-12-16 Gallium arsenide photocathode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5142675A GB1535061A (en) 1975-12-16 1975-12-16 Gallium arsenide photocathode

Publications (1)

Publication Number Publication Date
GB1535061A true GB1535061A (en) 1978-12-06

Family

ID=10459971

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5142675A Expired GB1535061A (en) 1975-12-16 1975-12-16 Gallium arsenide photocathode

Country Status (1)

Country Link
GB (1) GB1535061A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4369099A (en) * 1981-01-08 1983-01-18 Bell Telephone Laboratories, Incorporated Photoelectrochemical etching of semiconductors
FR2553934A1 (en) * 1983-10-19 1985-04-26 Labo Electronique Physique SEMICONDUCTOR STRUCTURE-VITREOUS SUPPORT AND DEVICES PRODUCED WITH SUCH A STRUCTURE
US4622114A (en) * 1984-12-20 1986-11-11 At&T Bell Laboratories Process of producing devices with photoelectrochemically produced gratings
GB2269048A (en) * 1992-07-03 1994-01-26 Third Generation Technology Li Photoemitters

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4369099A (en) * 1981-01-08 1983-01-18 Bell Telephone Laboratories, Incorporated Photoelectrochemical etching of semiconductors
FR2553934A1 (en) * 1983-10-19 1985-04-26 Labo Electronique Physique SEMICONDUCTOR STRUCTURE-VITREOUS SUPPORT AND DEVICES PRODUCED WITH SUCH A STRUCTURE
EP0139334A2 (en) * 1983-10-19 1985-05-02 Laboratoires D'electronique Et De Physique Appliquee L.E.P. Semiconductor-glass support structure and devices provided with such a structure
EP0139334A3 (en) * 1983-10-19 1985-06-19 Laboratoires D'electronique Et De Physique Appliquee L.E.P. Semiconductor-glass support structure and devices provided with such a structure
US4622114A (en) * 1984-12-20 1986-11-11 At&T Bell Laboratories Process of producing devices with photoelectrochemically produced gratings
GB2269048A (en) * 1992-07-03 1994-01-26 Third Generation Technology Li Photoemitters
GB2269048B (en) * 1992-07-03 1995-10-04 Third Generation Technology Li Photoemitters

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee