GB1258360A - - Google Patents

Info

Publication number
GB1258360A
GB1258360A GB1258360DA GB1258360A GB 1258360 A GB1258360 A GB 1258360A GB 1258360D A GB1258360D A GB 1258360DA GB 1258360 A GB1258360 A GB 1258360A
Authority
GB
United Kingdom
Prior art keywords
grooves
junction
type
type gaas
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1258360A publication Critical patent/GB1258360A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

1,258,360. Luminescent materials and uses thereof. STANDARD TELEPHONES & CABLES Ltd. 25 Sept., 1970, No. 45732/70. Heading C4S. [Also in Division H1] A heterostructure injection laser, Fig. 5, comprises a GraAs p-n junction and a p-type GaAlAs heterostructure layer, and is formed with two adjacent and parallel V-shaped grooves which penetrate through the n-type GaAs and the junction into the p-type GaApAs, the structure having opposed electrodes 50, 52, with the electrode 50 restricted to a ridge 32 of n-type GaAs defined by the grooves so as to confine the injection current to the immediately adjacent portion of the p-n junction. An optical resonator is formed by cleaving the semi-conductor structure orthogonal to the grooves, while the parallel grooves are formed in a V-shape to suppress the generation of transverse radiation. A plurality of lasers are formed 'simultaneously by epitaxially growing a layer of zinc-doped p-type GaAlAs on one major surface of an n-type GaAs substrate, diffusion of the zinc into the substrate forming the p-n junction. The substrate thickness is then reduced by polishing to leave an n-type GaAs layer about 3 microns thick. Spaced pairs of grooves 30, Fig. 3, are formed in the structure by etching and the use of a photoresist, followed by the deposition of an insulating layer of SiO 2 . Windows are then etched through the insulating layer over the length of the ridges 32 and the electrodes deposited by flash evaporation. The structure is finally cleaved into individual laser chips. The electrode 50 is graded from a goldgermanium alloy through nickel to gold, while electrode 52 is graded from a gold-zinc alloy through nickel to gold.
GB1258360D 1970-09-25 1970-09-25 Expired GB1258360A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4573270 1970-09-25

Publications (1)

Publication Number Publication Date
GB1258360A true GB1258360A (en) 1971-12-30

Family

ID=10438353

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1258360D Expired GB1258360A (en) 1970-09-25 1970-09-25

Country Status (2)

Country Link
AU (1) AU464738B2 (en)
GB (1) GB1258360A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2304181A1 (en) * 1975-03-11 1976-10-08 Philips Nv SEMICONDUCTOR DEVICE FOR GENERATING INCONSISTENT RADIATION AND METHOD FOR MANUFACTURING SUCH A DEVICE
GB2000374A (en) * 1977-06-10 1979-01-04 Hitachi Ltd Light emitting semiconductor device
US4230997A (en) * 1979-01-29 1980-10-28 Bell Telephone Laboratories, Incorporated Buried double heterostructure laser device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2304181A1 (en) * 1975-03-11 1976-10-08 Philips Nv SEMICONDUCTOR DEVICE FOR GENERATING INCONSISTENT RADIATION AND METHOD FOR MANUFACTURING SUCH A DEVICE
GB2000374A (en) * 1977-06-10 1979-01-04 Hitachi Ltd Light emitting semiconductor device
GB2000374B (en) * 1977-06-10 1982-02-10 Hitachi Ltd A light emitting semiconductor device
US4230997A (en) * 1979-01-29 1980-10-28 Bell Telephone Laboratories, Incorporated Buried double heterostructure laser device

Also Published As

Publication number Publication date
AU3307671A (en) 1973-03-08
AU464738B2 (en) 1975-09-04

Similar Documents

Publication Publication Date Title
US3981023A (en) Integral lens light emitting diode
US4476563A (en) Semiconductor laser having at least two radiation beams, and method of manufacturing same
GB1376910A (en) Semiconductor bodies for semiconductor injection lasers
GB1342767A (en) Light emitting semiconductor devices
US4080245A (en) Process for manufacturing a gallium phosphide electroluminescent device
US4032944A (en) Semiconductor device for generating incoherent radiation and method of manufacturing same
CA1128634A (en) Semiconductor laser structure and manufacture
US5163064A (en) Laser diode array and manufacturing method thereof
US4999843A (en) Vertical semiconductor laser with lateral electrode contact
EP0204725A1 (en) ASYMMETRIC CHIP DESIGN FOR LEDs.
GB1419695A (en)
JPS5848481A (en) Surface emitting type light emitting diode built in monitoring light detector
US4841534A (en) Buried type semiconductor laser device
US5478774A (en) Method of fabricating patterned-mirror VCSELs using selective growth
GB1258360A (en)
US4416011A (en) Semiconductor light emitting device
US4653057A (en) Semiconductor device for processing electro-magnetic radiation
US3349476A (en) Formation of large area contacts to semiconductor devices
US4447822A (en) Light emitting diode
RICHARD Improvements in or relating to injection lasers
JPH05218585A (en) Semiconductor light emitting device
JPH0363830B2 (en)
KR950002208B1 (en) Laser diode and manufacturing method thereof
JPS61242091A (en) Semiconductor light-emitting element
CA1189177A (en) Planar narrow-stripe laser with improved contact resistance

Legal Events

Date Code Title Description
PS Patent sealed
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PCNP Patent ceased through non-payment of renewal fee