GB1419695A - - Google Patents
Info
- Publication number
- GB1419695A GB1419695A GB1184073A GB1184073A GB1419695A GB 1419695 A GB1419695 A GB 1419695A GB 1184073 A GB1184073 A GB 1184073A GB 1184073 A GB1184073 A GB 1184073A GB 1419695 A GB1419695 A GB 1419695A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- mesa
- gaas
- laser
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 6
- 239000011521 glass Substances 0.000 abstract 3
- 238000004519 manufacturing process Methods 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 230000017525 heat dissipation Effects 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000008188 pellet Substances 0.000 abstract 1
- 239000005360 phosphosilicate glass Substances 0.000 abstract 1
- 230000010287 polarization Effects 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Abstract
1419695 Electroluminescence HITACHI Ltd 12 March 1973 [13 March 1972] 11840/73 Heading C4S [Also in Division H1] A heterojunction laser has a stripe shaped mesa above its active region so as to prevent the laser current diverging before it reaches the active region. By preventing divergence the threshold current is kept low; because the active region itself is not included in the mesa heat dissipation is easier, and also there are no large refractive index discontinuities in the plane of the active region so that single mode output is obtained with a polarization which is current independent. The basic construction of a double heterojunction laser of the invention is shown in Fig. 1, where the active region is a layer 3 of GaAs sandwiched between GaAlAs layers 2 and 4. A mesa is formed above layer 3 by the layer 2, a GaAs layer 1, insulator 7 and electrode 6. Regions 8 are spaces produced during etching, the block 5 is a GaAs substrate and layer 9 is the second electrode. If desired the layer 2 may be very thin and left unetched during manufacture as in Fig. 4. The laser may be provided with further non-light emitting mesas to ease mounting requirements, Fig. 6 (not shown), or since heat dissipation and current confinement are good several independent lasers having a common electrode may be formed on a single substrate, Fig. 13. The mesa may also be used with single heterojunction devices. Because slight refractive index changes occur between the parts of layer 3 which do and do not carry current there is a degree of lateral light confinement, and a curved mesa may be used as a result. Materials.-In Fig. 1 layer 1 is P-type Zn doped GaAs; layer 2 is P-type Zn doped Ga 0 . 7 Al 0 . 3 As; layer 3 is P-type Si doped GaAs; layer 4 is N-type Te doped Ga 0 . 7 Al 0 . 3 AS; layer 5 is N-type GaAs; electrode 6 is Cr with Au; insulator 7 is a phosphosilicate glass; regions 8 are apertures; electrode 9 is Au with Ge and Ni. Manufacture.-Zn is initially diffused into the upper surface of a multi-layer crystal formed by liquid phase epitaxial growth of materials 1-5 above. This forms a P + -type layer on the surface. A glass stripe shape mask is deposited on the surface, then all of layer 1 except the regions under the mask are etched away with a 4 : 1 : 1 mixture of H 2 SO 4 +H 2 O 2 +H 2 O. Further etching with a 1 : 1 mixture of HF+H 2 O removes all of layer 2 except that portion under the mesa, Fig. 3c, and also removes the glass mask. The portion of layer 2 remaining is slightly narrower than layer 1, forming apertures 8 of Fig. 1. This structure is now coated with glass layer 7 which is etched away above the mesa so that the conductor 6 can be evaporated on to the mesa. Evaporation of conductor 9 on to the other face of the crystal and clearing completes the manufacture of the laser pellet, which is then mounted on a stem to provide a laser diode. In practice the H 2 SO 4 etchant removes some of layer 2 and may also attack layer 3; a 1 : 40 : 40 mixture of HF+H 2 O 2 +H 2 O does not attack layer 2 and is to be preferred. If this latter etchant is used the whole of layer 2 may be preserved so that the structure of Fig. 4 can be made. It is also possible to form the mesa by a known sputtering technique.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2564472A JPS5321275B2 (en) | 1972-03-13 | 1972-03-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1419695A true GB1419695A (en) | 1975-12-31 |
Family
ID=12171529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1184073A Expired GB1419695A (en) | 1972-03-13 | 1973-03-12 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5321275B2 (en) |
DE (1) | DE2312162C3 (en) |
GB (1) | GB1419695A (en) |
NL (1) | NL159536B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0955704A3 (en) * | 1998-05-08 | 2007-09-05 | Sony Corporation | Photoelectric conversion element and method for manufacturing the same |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1531238A (en) * | 1975-01-09 | 1978-11-08 | Standard Telephones Cables Ltd | Injection lasers |
NL176323C (en) * | 1975-03-11 | 1985-03-18 | Philips Nv | SEMICONDUCTOR DEVICE FOR GENERATING INCOHERENT RADIATION. |
JPS606118B2 (en) * | 1975-03-12 | 1985-02-15 | 株式会社日立製作所 | semiconductor laser equipment |
JPS5215280A (en) * | 1975-07-28 | 1977-02-04 | Nippon Telegr & Teleph Corp <Ntt> | Cleavage semiconductor laser equipped with side surface light take-out waveguide |
JPS5245296A (en) * | 1975-10-07 | 1977-04-09 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductive phototransmission pass and semiconductor emission devic e used it |
DE2760112C2 (en) * | 1976-07-02 | 1989-05-18 | N.V. Philips' Gloeilampenfabrieken, Eindhoven, Nl | |
NL7607299A (en) * | 1976-07-02 | 1978-01-04 | Philips Nv | INJECTION LASER. |
JPS5842283A (en) * | 1981-09-04 | 1983-03-11 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of buried type semiconductor laser |
JPS62157339A (en) * | 1986-11-28 | 1987-07-13 | Hitachi Ltd | Information reproducing device |
CA2006597A1 (en) * | 1988-12-26 | 1990-06-26 | Kazuo Kogure | Method for manufacturing compound semiconductor devices and a compound semiconductor device |
US5359619A (en) * | 1992-02-20 | 1994-10-25 | Sumitomo Electric Industries, Ltd. | Multi-beam semiconductor laser and method for producing the same |
-
1972
- 1972-03-13 JP JP2564472A patent/JPS5321275B2/ja not_active Expired
-
1973
- 1973-03-12 DE DE2312162A patent/DE2312162C3/en not_active Expired
- 1973-03-12 NL NL7303449.A patent/NL159536B/en not_active IP Right Cessation
- 1973-03-12 GB GB1184073A patent/GB1419695A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0955704A3 (en) * | 1998-05-08 | 2007-09-05 | Sony Corporation | Photoelectric conversion element and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
NL7303449A (en) | 1973-09-17 |
DE2312162B2 (en) | 1977-07-14 |
JPS4894378A (en) | 1973-12-05 |
JPS5321275B2 (en) | 1978-07-01 |
DE2312162A1 (en) | 1973-10-04 |
DE2312162C3 (en) | 1978-03-09 |
NL159536B (en) | 1979-02-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |