JPH01215087A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JPH01215087A JPH01215087A JP4106488A JP4106488A JPH01215087A JP H01215087 A JPH01215087 A JP H01215087A JP 4106488 A JP4106488 A JP 4106488A JP 4106488 A JP4106488 A JP 4106488A JP H01215087 A JPH01215087 A JP H01215087A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active region
- inp
- light emitting
- ingaasp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000007791 liquid phase Substances 0.000 claims abstract description 5
- 230000010355 oscillation Effects 0.000 abstract description 10
- 239000013078 crystal Substances 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 1
- 238000005253 cladding Methods 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- TUSUWHFYKZZRIG-JQWMYKLHSA-N C([C@@H](NC(=O)[C@@H](C(C)C)NC(=O)[C@@H](CC(C)C)NC)C(=O)N[C@H](CC=1C=CC=CC=1)C(=O)N[C@H](CC(C)C)C(N)=O)C1=CC=CC=C1 Chemical compound C([C@@H](NC(=O)[C@@H](C(C)C)NC(=O)[C@@H](CC(C)C)NC)C(=O)N[C@H](CC=1C=CC=CC=1)C(=O)N[C@H](CC(C)C)C(N)=O)C1=CC=CC=C1 TUSUWHFYKZZRIG-JQWMYKLHSA-N 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、発光部と隣接する導波部を有する半導体発
光素子に係り、特に発光部のレーザ発振しきい値電流低
減および高機能化に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a semiconductor light emitting device having a waveguide section adjacent to a light emitting section, and particularly relates to reducing the laser oscillation threshold current and improving the functionality of the light emitting section. It is something.
（従来の技術）
第２図（ａ）、（ｂ）、（Ｃ）はＴＨＥ ＴＲＡＮＳＡ
Ｃ−ＴＩＯＮＳ ＯＦ ＴＨＥ ＩＥＣＥ ＯＦ、 Ｊ
ＡＰＡＮ、ＶＯＬ、Ｅ６８．Ｎｏ、１２（１９８Ｓ）
９７８８〜７９０に示された従来の半導体発光素子を示
す断面図であり、第２図（ａ）は半導体発光素子の光出
力方向の断面図、第２図（ｂ）は、第２図（ａ）の切断
線Ｃ−Ｃにおける発光部の断面図、第２図（Ｃ）は、第
２図（ａ）の切断線り一りにおける導波部の断面図であ
る。(Prior art) Figures 2 (a), (b), and (C) show THE TRANSA
C-TIONS OF THE IECE OF, J
APAN, VOL, E68. No. 12 (198S)
FIG. 2(a) is a cross-sectional view of the semiconductor light emitting device in the light output direction, and FIG. 2(b) is a cross-sectional view of the conventional semiconductor light emitting device shown in FIG. 2(C) is a sectional view of the waveguide section taken along the cutting line C--C in FIG. 2(a).
これらの図において、１１はｎ０形のＩｎＰ基板、１２
はｎ形のＩｎＰクラッド層、１３はＩｎＧａＡｓＰ活性
層、１４はｐ形のＩｎＰ層、１５はＩｎＧａＡｓＰガイ
ド層（先導波層）、１６はｐ形のＩｎＰクラッド層、１
７はｐ０形のＩｎＧａＡｓＰコンタクト層、１８はｎ電
極、１９は活性領域側ｐ電極、２０は導波領域側ｐ電極
、２１は回折格子、２２はｐ形のＩｎＰ埋込層、２３は
ｎ形のＩｎＰ埋込層である。In these figures, 11 is an n0 type InP substrate, 12
1 is an n-type InP cladding layer, 13 is an InGaAsP active layer, 14 is a p-type InP layer, 15 is an InGaAsP guide layer (leading wave layer), 16 is a p-type InP cladding layer, 1
7 is a p0 type InGaAsP contact layer, 18 is an n electrode, 19 is a p electrode on the active region side, 20 is a p electrode on the waveguide region side, 21 is a diffraction grating, 22 is a p type InP buried layer, 23 is an n type This is an InP buried layer.
次に動作について説明する。Next, the operation will be explained.
活性領域側ｐ電極１９．ｎ電極１８間に順方向電流を流
すと、キャリアがＩｎＧａＡｓＰ活性層１３に注入され
輻射再結合する。そして、電流がレーザ発振しきい値を
越えると、レーザ発振が開始される。ここで、導波領域
側ｐ電極２０．ｎ電、１８間に新たに電流を注入すると
、ＩｎＧａＡｓＰガイド層１５の屈折率が変化しレーザ
の発光特性（波長）が変化する。すなわち、この半導体
発光素子は、変調部を一体化した素子として用いること
ができる。また、この半一導体発光素子は導波領域に回
折格子２１を備えているので単一波長の光が取り出され
る。Active region side p-electrode 19. When a forward current is passed between the n-electrodes 18, carriers are injected into the InGaAsP active layer 13 and radiatively recombine. Then, when the current exceeds the laser oscillation threshold, laser oscillation is started. Here, the waveguide region side p-electrode 20. When a new current is injected between n and 18, the refractive index of the InGaAsP guide layer 15 changes, and the emission characteristics (wavelength) of the laser change. That is, this semiconductor light emitting device can be used as a device with an integrated modulation section. Furthermore, since this semiconductor light emitting device is equipped with a diffraction grating 21 in the waveguide region, light of a single wavelength can be extracted.
（発明が解決しようとする課題）
上記のような従来の半導体発光素子は、その製造手順に
起因して活性領域側のＩｎＰ層１層上４上比較的厚いＩ
ｎＧａＡｓＰガイド層１５が形成されているため、この
領域でロスが生じてレーザ発振のしきい値電流が大きく
なるという問題点があった。この発明は、かかる課題を
解決するためになされたもので、変調部を一体化したま
までレーザ発振しきい値電流を低減できる半導体発光素
子を得ることを目的とする。(Problem to be Solved by the Invention) The conventional semiconductor light emitting device as described above has a relatively thick I layer on the InP layer 1 on the active region side due to its manufacturing procedure.
Since the nGaAsP guide layer 15 is formed, there is a problem in that loss occurs in this region and the threshold current for laser oscillation increases. The present invention was made to solve this problem, and an object of the present invention is to obtain a semiconductor light emitting device that can reduce the laser oscillation threshold current while keeping the modulation section integrated.
この発明に係る半導体素子は、活性領域を細いストライ
プ状とするとともに、少なくとも光ガイド層を液相成長
法により形成して導波部内および活性領域の両側に設け
たものである。In the semiconductor device according to the present invention, the active region has a thin stripe shape, and at least a light guide layer is formed by a liquid phase growth method and provided within the waveguide portion and on both sides of the active region.
（作用）
この発明においては、光ガイド層が細いストライプ状の
活性領域上には成長しにくく、仮に成長してもその厚さ
はごく僅かである。(Function) In this invention, it is difficult for the light guide layer to grow on the thin striped active region, and even if it grows, its thickness is very small.
（実施例〕
第１図（ａ）、（ｂ）、（ｅ）はこの発明の半導体発光
素子の一実施例を示す断面図であり、第１図（ａ）はこ
の発明の半導体発光素子の光出力方向の断面図、第１図
（ｂ）は、第１図（ａ）の切断線Ａ−Ａにおける発光部
の断面図、第１図（Ｃ）は、第１図（ａ）の切断線Ｂ−
Ｂにおける導波部の断面図である。(Example) FIGS. 1(a), (b), and (e) are cross-sectional views showing an example of the semiconductor light emitting device of the present invention, and FIG. 1(a) is a cross-sectional view of the semiconductor light emitting device of the present invention. A cross-sectional view in the light output direction, FIG. 1(b) is a cross-sectional view of the light emitting part along the cutting line A-A in FIG. 1(a), and FIG. 1(C) is a cross-sectional view along the cutting line A-A in FIG. 1(a). Line B-
FIG.
これらの図において、１はｎ０形のＩｎＰ基板、２はｎ
形のＩｎＰクラッド層、３はＩｎＧａＡｓＰ活性層、４
はｐ形のＩｎＰ層、５はＩｎＧａＡｓＰガイド層（導波
領域）、６はｐ形のＩｎＰクラッド層、７はｐ０形のＩ
ｎＧａＡｓＰコンタクト層、８はｎ電極、９は活性領域
側ｐ電極、１０は導波領域側ｐ電極である。In these figures, 1 is an n0 type InP substrate, 2 is an n0 type InP substrate, and 2 is an n0 type InP substrate.
InP cladding layer 3, InGaAsP active layer 4
is a p-type InP layer, 5 is an InGaAsP guide layer (waveguide region), 6 is a p-type InP cladding layer, and 7 is a p0-type I
In the nGaAsP contact layer, 8 is an n-electrode, 9 is a p-electrode on the active region side, and 10 is a p-electrode on the waveguide region side.
次に動作について説明する。Next, the operation will be explained.
活性領域側ｐ電極９．ｎ電極８間′に順方向電流を流す
と、キャリアがＩｎＧａＡｓＰ活性層３に注入されて輻
射再結合する。そして電流がレーザ発振しきい値電流を
越えるとレーザ発振が開始される。ここで、導波領域側
ｐ電極１０．ｎ電極８間に新たに電流を注入するとＩｎ
ＧａＡｓＰガイド層５の屈折率が変化してレーザの発光
特性が変 −化する。すなわち、この半導体発光素子は
変調部を一体化した素子として使用することができる。Active region side p electrode 9. When a forward current is passed between the n-electrodes 8', carriers are injected into the InGaAsP active layer 3 and radiatively recombined. Then, when the current exceeds the laser oscillation threshold current, laser oscillation is started. Here, the waveguide region side p-electrode 10. When a new current is injected between the n-electrodes 8, In
The refractive index of the GaAsP guide layer 5 changes, and the emission characteristics of the laser change. That is, this semiconductor light emitting device can be used as a device with an integrated modulation section.
ところで、この実施例では発光部にＩ ｎＧａＡｓＰガ
イド層５が形成されていないためロスがなく、従来のも
のよりもレーザ発振しきい値電流が低減される。By the way, in this embodiment, since the InGaAsP guide layer 5 is not formed in the light emitting part, there is no loss, and the laser oscillation threshold current is reduced compared to the conventional one.
さらに、この構造を用いれば、これらの活性−導波領域
を複数個持たせた集積素子の実現も容易となる。Furthermore, if this structure is used, it becomes easy to realize an integrated device having a plurality of these active waveguide regions.
次に第１図（ａ）〜（Ｃ）に示した半導体発光素子を得
るための製造工程について説明する。Next, the manufacturing process for obtaining the semiconductor light emitting device shown in FIGS. 1(a) to 1(C) will be described.
まず、１回目の結晶成長においてＩｎＰ基板１上にＩｎ
Ｐクラッド層２．１ｎＧａＡｓＰ活性層３、ＩｎＰ層４
を順次形成する。First, in the first crystal growth, InP substrate 1 is
P cladding layer 2.1nGaAsP active layer 3, InP layer 4
are formed sequentially.
次にこの構造に対して、ＩｎＧａＡｓＰ活性層３をエツ
チングしない塩酸系エツチング液を用いてＩｎＰ層４を
選択的にエツチングし、さらにＩｎＰ層４をエツチング
しない硫酸系エツチング液を用いてＩｎＧａＡｓＰ活性
層３を選択的にエツチングすることにより、幅が５μｍ
以下のストライプ状の活性領域を形成するとともに、Ｉ
ｎＰクラッド層２の表面を露出させる。Next, with respect to this structure, the InP layer 4 is selectively etched using a hydrochloric acid-based etching solution that does not etch the InGaAsP active layer 3, and then the InGaAsP active layer 4 is selectively etched using a sulfuric acid-based etchant that does not etch the InP layer 4. By selectively etching the
While forming the following striped active regions,
The surface of the nP cladding layer 2 is exposed.
次に、２回目の結晶成長において、Ｉ ｎＧａＡｓＰガ
イド層５．ＩｎＰクラッド層６．ＩｎＧａＡｓＰコンタ
クト層７を順次形成する。この際、少なくともＩｎＧａ
ＡｓＰガイド層５は液相成長法により形成するが、液相
成長法においてはＩｎＧａＡｓＰガイド層５の成長時間
を適当に選ぶことにより、５μｍ以下の狭いストライプ
状の活性領域上にはＩｎＧａＡｓＰガイド層５が成長じ
なぃようにすることができるため、第１図に示した構造
を再現性良く実現できる。Next, in the second crystal growth, the InGaAsP guide layer 5. InP cladding layer6. InGaAsP contact layers 7 are sequentially formed. At this time, at least InGa
The AsP guide layer 5 is formed by a liquid phase growth method. In the liquid phase growth method, by appropriately selecting the growth time of the InGaAsP guide layer 5, the InGaAsP guide layer 5 is formed on a narrow stripe-shaped active region of 5 μm or less. Since the structure shown in FIG. 1 can be prevented from growing, the structure shown in FIG. 1 can be realized with good reproducibility.
また、この製造方法によればストライプ状の活性領域上
にＩｎＧａＡｓＰガイド層５が成長してもその厚さは僅
かであり、レーザ発振しきい値電流の低減は充分可能で
ある。 −
なお、上記実施例では、ＩｎＰｎツクド層６およびＩｎ
ＧａＡｓＰコンタクト層７を形成したのち、リッジ導波
構造としたものを示したが、埋込構造、もしくは不純物
拡散、不純物イオン注入を用いて上側の電流注入部を狭
窄した構造、あるいは全く電流狭窄しない構造としても
よい。Further, according to this manufacturing method, even if the InGaAsP guide layer 5 is grown on the striped active region, its thickness is small, and the laser oscillation threshold current can be sufficiently reduced. - In the above embodiment, the InPn covered layer 6 and the InPn
Although a structure in which a ridge waveguide structure is formed after forming the GaAsP contact layer 7 is shown, a buried structure, a structure in which the upper current injection part is constricted using impurity diffusion or impurity ion implantation, or a structure in which the current injection part is not constricted at all It may also be a structure.
また、上記実施例では回折格子を持たない構造のものに
ついて示したが、活性領域および導波領域の両方もしく
はいずれか一方に回折格子を有する構造のものとしても
よい。Further, although the above embodiments have been shown to have a structure without a diffraction grating, a structure having a diffraction grating in either or both of the active region and the waveguide region may be used.
さらに、上記実施例では導波部で発光特性を変化させる
構造のものを示したが、発光部と導波部が隣接している
ものであれば、この構造以外の半導体発光素子について
も応用できることはいうまでもない。Furthermore, although the above embodiment shows a structure in which the light emitting characteristics are changed in the waveguide section, it can also be applied to semiconductor light emitting devices with other structures as long as the light emitting section and the waveguide section are adjacent to each other. Needless to say.
（発明の効果）
この発明は以上説明したとおり、活性領域を細いストラ
イプ状とするとともに、少なくとも光ガイド層を液相成
長法により形成し−て導波部内および活性領域の両側に
設けたので、発光に必要なしきい値電流を低減でき、か
つ導波領域を含め高機能化が可能になるという効果があ
る。(Effects of the Invention) As explained above, in this invention, the active region is formed into a thin stripe shape, and at least the optical guide layer is formed by liquid phase epitaxy and provided inside the waveguide section and on both sides of the active region. This has the effect of reducing the threshold current required for light emission and enabling higher functionality including the waveguide region.
第１図はこの発明の半導体発光素子の一実施例を示す図
、第２図は従来の半導体発光素子を示す図である。
図において、１はＩｎＰ基板、２はＩｎＰクラッド層、
３はＩｎＧａＡｓＰ活性層、４はＩｎＰ層、５はＩｎＧ
ａＡｓＰガイド層、６はＩｎＰクラッド層、７はＩｎＧ
ａＡｓＰコンタクト層である。
なお、各図中の同一符号は同一または相当部分を示す。
代理人 大 岩 増 雄 （外２名）第１図
（ａ）
（ｂ） （ｃ）
第２図
（ａ）
（ｂ）（Ｃ）FIG. 1 is a diagram showing an embodiment of the semiconductor light emitting device of the present invention, and FIG. 2 is a diagram showing a conventional semiconductor light emitting device. In the figure, 1 is an InP substrate, 2 is an InP cladding layer,
3 is InGaAsP active layer, 4 is InP layer, 5 is InG
aAsP guide layer, 6 is InP cladding layer, 7 is InG
This is an aAsP contact layer. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 (a) (b) (c) Figure 2 (a) (b) (C)
Claims (1)
結合する光ガイド層を含む導波部とを備えた半導体発光
素子において、前記活性領域を細いストライプ状とする
とともに、少なくとも前記光ガイド層を液相成長法によ
り形成して前記導波部内および前記活性領域の両側に設
けたことを特徴とする半導体発光素子。In a semiconductor light emitting device comprising, on the same substrate, a light emitting section including an active region and a waveguide section including a light guide layer coupled to the active region, the active region is formed into a thin stripe shape, and at least the light guide 1. A semiconductor light emitting device, characterized in that a layer is formed by a liquid phase growth method and provided within the waveguide and on both sides of the active region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4106488A JPH01215087A (en) | 1988-02-24 | 1988-02-24 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4106488A JPH01215087A (en) | 1988-02-24 | 1988-02-24 | Semiconductor light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01215087A true JPH01215087A (en) | 1989-08-29 |
Family
ID=12598001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4106488A Pending JPH01215087A (en) | 1988-02-24 | 1988-02-24 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01215087A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04243216A (en) * | 1991-01-17 | 1992-08-31 | Nec Corp | Production of optical waveguide and optical integrated element and production thereof |
| JP2016092124A (en) * | 2014-10-31 | 2016-05-23 | 三菱電機株式会社 | Optical modulator integrated semiconductor laser |
-
1988
- 1988-02-24 JP JP4106488A patent/JPH01215087A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04243216A (en) * | 1991-01-17 | 1992-08-31 | Nec Corp | Production of optical waveguide and optical integrated element and production thereof |
| JP2016092124A (en) * | 2014-10-31 | 2016-05-23 | 三菱電機株式会社 | Optical modulator integrated semiconductor laser |
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