JPS63187620A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS63187620A JPS63187620A JP1999187A JP1999187A JPS63187620A JP S63187620 A JPS63187620 A JP S63187620A JP 1999187 A JP1999187 A JP 1999187A JP 1999187 A JP1999187 A JP 1999187A JP S63187620 A JPS63187620 A JP S63187620A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- quartz substrate
- substrate
- laser beam
- dopant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000010453 quartz Substances 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 239000012535 impurity Substances 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 239000010408 film Substances 0.000 abstract description 5
- 239000002019 doping agent Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract 1
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、石英基板上の半導体薄膜（所謂５ＯＩ）に形
成された半導体装置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device formed on a semiconductor thin film (so-called 5OI) on a quartz substrate.
本発明は、半導体装置の製造方法であり、石英基板の裏
面側からレーザ光を照射して半導体薄膜に不純物を導入
することにより、効率良く不純物の導入が行えるように
したものである。The present invention is a method for manufacturing a semiconductor device, in which impurities can be efficiently introduced into a semiconductor thin film by irradiating a laser beam from the back side of a quartz substrate.
近来、ＳＯＩだ係る半導体装置の製造方法において、不
純物を導入（ドーピング）すべきガス（ＰＨ３、ＡｓＨ
３、Ｂ２Ｈ６等）雰囲気中にＳｉ薄膜が形成された石英
基板を配置し、エキシマレーザ光を照射してＳｉ薄膜中
に不純物を導入することばより浅い接合を形成すること
が提案されている。Recently, in the manufacturing method of semiconductor devices such as SOI, gases (PH3, AsH
3, B2H6, etc.) It has been proposed to form a shallower junction by arranging a quartz substrate on which a Si thin film is formed in an atmosphere and irradiating it with excimer laser light to introduce impurities into the Si thin film.
従来のエキシマレーザ光の照射は、石英基板の表面側（
Ｓｉ薄膜が形成されている面側）から行っているが、こ
のような照射方法によれば破照射面の表面状態てよって
反射の度合が異なり、必ずしもエネルギ効率の良い照射
方法とは容えなかった。Conventional excimer laser light irradiation is performed on the surface side of the quartz substrate (
However, with this type of irradiation method, the degree of reflection varies depending on the surface condition of the irradiated surface, and it cannot necessarily be considered an energy-efficient irradiation method. Ta.
また、レーザ光がＳｉ薄膜に達するまでに不純物のガス
圧よって多少吸収されるため、エネルギのロスが生じる
という問題もあった。Furthermore, there is also the problem that energy loss occurs because the laser light is absorbed to some extent by the gas pressure of impurities before reaching the Si thin film.
本発明は、上記問題点を解決することができる半導体装
置の製造方法を提供するものである。The present invention provides a method for manufacturing a semiconductor device that can solve the above problems.
本発明は、石英基板（４）上の半導体薄膜（１）に形成
された半導体装置の製造方法において、石英基板（４）
の裏面側からレーザ光（５）を照射して半導体薄膜（１
）に不純物ガス中の不純物を導入することを特徴とする
。The present invention provides a method for manufacturing a semiconductor device formed on a semiconductor thin film (1) on a quartz substrate (4).
Laser light (5) is irradiated from the back side of the semiconductor thin film (1).
) is characterized by introducing impurities in the impurity gas.
上記製造方法によシレーザ光（５）を照射する場合、石
英基板（４）の上面側と下面側とを封止部材（７）で仕
切り、下面側を真空にしてレーザ光（５）を照射するの
が好ましい。レーザ光（５）としては、短波長のノクル
スレーザ光、例えばエキシマレーザ光を使用する。When irradiating the laser beam (5) with the above manufacturing method, the upper surface side and the lower surface side of the quartz substrate (4) are separated by a sealing member (7), and the lower surface side is evacuated and the laser beam (5) is irradiated. It is preferable to do so. As the laser light (5), a short wavelength Noculus laser light, for example, an excimer laser light is used.
本発明に係るレーザ光（５）の照射方法によれば、石英
基板（４）の裏面側から照射するため、表面側の表面状
態によっては影響を受けず、吸収エネルギの安定性が良
くなシ、またドーピング量の制御性も良くなる。また、
石英基板（４）に封止部材（７）による仕切りを設け、
裏面側を真空にしてレーザ光（５）の照射を行う場合に
は、不純物ガスの吸収によるエネルギロスがなくなるた
め、更に効率良くレーザ光（５）の照射を行うことがで
きる。According to the laser beam (5) irradiation method of the present invention, since the laser beam (5) is irradiated from the back side of the quartz substrate (4), it is not affected by the surface condition of the front side, and the absorption energy is stable. , the controllability of the doping amount is also improved. Also,
A partition formed by a sealing member (7) is provided on the quartz substrate (4),
When the back surface side is evacuated and irradiated with laser light (5), there is no energy loss due to absorption of impurity gas, so irradiation with laser light (5) can be performed more efficiently.
図面を参照して本発明の詳細な説明する。 The present invention will be described in detail with reference to the drawings.
先ず第１図に示す実施例においては、Ｓ１薄膜（１）と
この上に窓部（２）を有する５ｉ０２膜（３）を形成し
た石英基板（４）を用意し、この石英基板（４）の周囲
を不純物としてドーピングすべきＰＨ３（又は、ＡｓＨ
３。First, in the embodiment shown in FIG. 1, a quartz substrate (4) on which an S1 thin film (1) and a 5i02 film (3) having a window (2) are formed is prepared, and this quartz substrate (4) PH3 (or AsH) to be doped as an impurity around the
3.
Ｂ２Ｈ６等）雰囲気（ガス圧は例えば数百Ｔｏｒｒ ）
とした後、基板（４）の裏面側からエキシマレーザ光（
５）を照射してＳｉ薄膜（１）を瞬時に加熱し、窓部（
２）からＰＨ３をＳｉ薄膜（１）中にドーピングする。B2H6, etc.) atmosphere (gas pressure, for example, several hundred Torr)
After that, excimer laser light (
5), the Si thin film (1) is instantly heated, and the window portion (
From 2), PH3 is doped into the Si thin film (1).
’ｈ オ５ｉ０２膜（１）上には更にノぞツシベーショ
ン膜トシテのＳｉＮ膜（６）を形成しておいても良い。A SiN film (6) may be further formed on top of the O5I02 film (1).
このエキシマレーザ光（５）の照射の際、石英基板（４
）背面の表面状態による反射に問題が生じることなく、
レーザ光（５）は石英中を透過してＳｉ薄膜（１）を良
好に加熱することができる。During irradiation with this excimer laser beam (5), the quartz substrate (4)
) without causing problems with reflections due to the surface condition of the back surface.
The laser beam (5) can pass through the quartz and heat the Si thin film (1) well.
次に第２図に示す実施例においては、石英基板（４）の
上面側と下面側とを封止部材（力で仕切り、上面側には
ドーピングすべきＰＨａ雰囲気とするが、下面側には不
純物ガスを入れないで真空状態に保って上記実施例と同
様にエキシマレーザ光（５）の照射を行う。このように
基板（４）の下面側を真空状態に保った場合には、不純
物ガスによるレーザ光（５）の吸収がなくなるため、エ
ネルギロスのない効率的なレーザ照射が可能になる。Next, in the embodiment shown in FIG. 2, the upper surface side and the lower surface side of the quartz substrate (4) are partitioned by a sealing member (force), and the upper surface side is in a PHa atmosphere to be doped, but the lower surface side is Irradiation with excimer laser light (5) is carried out in the same manner as in the above embodiment while keeping the vacuum state without introducing impurity gas.When the lower surface side of the substrate (4) is kept in the vacuum state in this way, the impurity gas Since absorption of the laser light (5) by the laser beam (5) is eliminated, efficient laser irradiation without energy loss becomes possible.
本発明によれば、石英基板の表面側からレーザ光を照射
して不純物をドーピングする方法と比べて、半導体薄膜
を実際に加熱できるエネルギ効率が良好になるため、ド
ーピング量の制御性が向上する。また、本発明によシ石
英基板の下面側を真空状態に保ってレーザ光の照射を行
うことが可能になるため、このようにして照射した場合
には不純物ガスによるレーザ光の吸収ロスがなくなシ、
エネルギ効率がよシ良好になる。According to the present invention, compared to a method of doping impurities by irradiating a laser beam from the surface side of a quartz substrate, the energy efficiency with which a semiconductor thin film can actually be heated is improved, so the controllability of the doping amount is improved. . In addition, according to the present invention, it is possible to irradiate the laser beam while keeping the bottom side of the quartz substrate in a vacuum state, so when irradiating in this way, there is no absorption loss of the laser beam due to impurity gas. Nasi,
Energy efficiency is improved.
第１図は実施例の断面図、第２図は他の実施例の断面図
である。
（１）はＳｉ薄膜、（３）は５ｉ０２膜、（４）は石英
基板、（５）はエキシマレーザ光、（７）は封止部材で
ある。FIG. 1 is a sectional view of an embodiment, and FIG. 2 is a sectional view of another embodiment. (1) is a Si thin film, (3) is a 5i02 film, (4) is a quartz substrate, (5) is an excimer laser beam, and (7) is a sealing member.
Claims (1)
方法において、 上記石英基板の裏面側からレーザ光を照射して上記半導
体薄膜に不純物を導入することを特徴とする半導体装置
の製造方法。[Claims] A method of manufacturing a semiconductor device formed in a semiconductor thin film on a quartz substrate, characterized in that impurities are introduced into the semiconductor thin film by irradiating a laser beam from the back side of the quartz substrate. Method of manufacturing the device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62019991A JP2605268B2 (en) | 1987-01-30 | 1987-01-30 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62019991A JP2605268B2 (en) | 1987-01-30 | 1987-01-30 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63187620A true JPS63187620A (en) | 1988-08-03 |
| JP2605268B2 JP2605268B2 (en) | 1997-04-30 |
Family
ID=12014634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62019991A Expired - Fee Related JP2605268B2 (en) | 1987-01-30 | 1987-01-30 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2605268B2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57173937A (en) * | 1981-04-17 | 1982-10-26 | Matsushita Electric Ind Co Ltd | Treatment for solid by laser |
| JPS61256671A (en) * | 1985-05-09 | 1986-11-14 | Fujitsu Ltd | Manufacture of thin film transistor |
| JPS622531A (en) * | 1985-06-27 | 1987-01-08 | Sony Corp | Manufacture of semiconductor device |
-
1987
- 1987-01-30 JP JP62019991A patent/JP2605268B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57173937A (en) * | 1981-04-17 | 1982-10-26 | Matsushita Electric Ind Co Ltd | Treatment for solid by laser |
| JPS61256671A (en) * | 1985-05-09 | 1986-11-14 | Fujitsu Ltd | Manufacture of thin film transistor |
| JPS622531A (en) * | 1985-06-27 | 1987-01-08 | Sony Corp | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2605268B2 (en) | 1997-04-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |