JPS622531A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS622531A
JPS622531A JP14139685A JP14139685A JPS622531A JP S622531 A JPS622531 A JP S622531A JP 14139685 A JP14139685 A JP 14139685A JP 14139685 A JP14139685 A JP 14139685A JP S622531 A JPS622531 A JP S622531A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
formed
impurity
semiconductor layer
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP14139685A
Other versions
JPH0691032B2 (en )
Inventor
Toshiyuki Samejima
Mitsunobu Sekiya
Setsuo Usui
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To enable to simultaneously execute impurity doping in the semiconductor layer and heat treatment of the semiconductor layer including the impurity- undoped region of the semiconductor layer, in one process by a method wherein the semiconductor layer is irradiated with an energy beam (a) from the back side of the transparent substrate at the time of doping of an impurity.
CONSTITUTION: A poly Si film 2 is formed on the surface of a glass substrate 1, then an Si oxide film 3, which is used as the gate insulating film, is formed, then a gate electrode 4 consisting of Al is formed and a part other than the part, located under the gate electrode 5, of the Si oxide film 3 is removed. After that, a PSG film 5 is formed on both the poly Si film 2 and the gate electrode 4 and a laser beam [energy (a)] is projected on the back surface of the glass sbstrate 1, hereby the interface between the PSG film 5 and the poly Si film 2 is heated. An N-type impurity, phosphorus P, is diffused in the poly Si film 2 from the PSG film 5, and an N+ source region 6 and an N+ drain region 7 are formed, but the doping of the impurity into the channel part can be interrupted by the gate electrode 4. As a result, the poly Si film 2 is heated over the whole and is crystallized.
COPYRIGHT: (C)1987,JPO&Japio
JP14139685A 1985-06-27 1985-06-27 A method of manufacturing a semiconductor device Expired - Lifetime JPH0691032B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14139685A JPH0691032B2 (en) 1985-06-27 1985-06-27 A method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14139685A JPH0691032B2 (en) 1985-06-27 1985-06-27 A method of manufacturing a semiconductor device

Publications (2)

Publication Number Publication Date
JPS622531A true true JPS622531A (en) 1987-01-08
JPH0691032B2 JPH0691032B2 (en) 1994-11-14

Family

ID=15291018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14139685A Expired - Lifetime JPH0691032B2 (en) 1985-06-27 1985-06-27 A method of manufacturing a semiconductor device

Country Status (1)

Country Link
JP (1) JPH0691032B2 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63187620A (en) * 1987-01-30 1988-08-03 Sony Corp Manufacture of semiconductor device
JPH02177443A (en) * 1988-12-28 1990-07-10 Sony Corp Manufacture of thin film transistor
JPH0391932A (en) * 1989-09-04 1991-04-17 Canon Inc Manufacture of semiconductor device
US5372574A (en) * 1991-11-14 1994-12-13 Hino; Takumi Artificial limb joint and joint device
US6323069B1 (en) * 1992-03-25 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using light irradiation to form impurity regions
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
US6500703B1 (en) 1993-08-12 2002-12-31 Semicondcutor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
JP2003151903A (en) * 2001-11-09 2003-05-23 Sharp Corp Manufacturing apparatus and method of semiconductor thin film as well as display device
RU2476955C2 (en) * 2011-05-06 2013-02-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" Method for formation of semiconductor device alloyed areas
JP2013041938A (en) * 2011-08-12 2013-02-28 V Technology Co Ltd Laser doping method and laser doping apparatus
JP2014154581A (en) * 2013-02-05 2014-08-25 Ricoh Co Ltd Heating method, piezoelectric film and method of manufacturing piezoelectric element, droplet discharge head, droplet discharge device, light irradiation device
US9620667B1 (en) * 2013-12-10 2017-04-11 AppliCote Associates LLC Thermal doping of materials

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63187620A (en) * 1987-01-30 1988-08-03 Sony Corp Manufacture of semiconductor device
JPH02177443A (en) * 1988-12-28 1990-07-10 Sony Corp Manufacture of thin film transistor
JPH0391932A (en) * 1989-09-04 1991-04-17 Canon Inc Manufacture of semiconductor device
US5372574A (en) * 1991-11-14 1994-12-13 Hino; Takumi Artificial limb joint and joint device
US6323069B1 (en) * 1992-03-25 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using light irradiation to form impurity regions
US6569724B2 (en) 1992-03-25 2003-05-27 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and method for forming the same
US6887746B2 (en) 1992-03-25 2005-05-03 Semiconductor Energy Lab Insulated gate field effect transistor and method for forming the same
US7381598B2 (en) 1993-08-12 2008-06-03 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
US6437366B1 (en) 1993-08-12 2002-08-20 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US6500703B1 (en) 1993-08-12 2002-12-31 Semicondcutor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
JP2003151903A (en) * 2001-11-09 2003-05-23 Sharp Corp Manufacturing apparatus and method of semiconductor thin film as well as display device
JP4651249B2 (en) * 2001-11-09 2011-03-16 シャープ株式会社 The semiconductor thin film manufacturing apparatus and a manufacturing method and a display device
RU2476955C2 (en) * 2011-05-06 2013-02-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" Method for formation of semiconductor device alloyed areas
JP2013041938A (en) * 2011-08-12 2013-02-28 V Technology Co Ltd Laser doping method and laser doping apparatus
JP2014154581A (en) * 2013-02-05 2014-08-25 Ricoh Co Ltd Heating method, piezoelectric film and method of manufacturing piezoelectric element, droplet discharge head, droplet discharge device, light irradiation device
US9620667B1 (en) * 2013-12-10 2017-04-11 AppliCote Associates LLC Thermal doping of materials

Also Published As

Publication number Publication date Type
JPH0691032B2 (en) 1994-11-14 grant

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term