FR2083740A5 - Laser applied surface film - Google Patents

Laser applied surface film

Info

Publication number
FR2083740A5
FR2083740A5 FR7010165A FR7010165A FR2083740A5 FR 2083740 A5 FR2083740 A5 FR 2083740A5 FR 7010165 A FR7010165 A FR 7010165A FR 7010165 A FR7010165 A FR 7010165A FR 2083740 A5 FR2083740 A5 FR 2083740A5
Authority
FR
France
Prior art keywords
surface film
applied surface
laser applied
deposited
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7010165A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7010165A priority Critical patent/FR2083740A5/en
Priority to NL7103634A priority patent/NL7103634A/xx
Priority to DE19712113336 priority patent/DE2113336A1/en
Application granted granted Critical
Publication of FR2083740A5 publication Critical patent/FR2083740A5/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation

Abstract

A thin material layer on a substrate is applied using an intensive light beam which is made to pass through a thin transfer layer of the material to, be deposited, which is placed in from of the substrate. Laser beams are employed for this process, which can be carried out in vacuum. The transfer material pref. consists of an inorganic salt of the metal to be deposited, dithiozonates being the most suitable. Used to produce semiconductors.
FR7010165A 1970-03-20 1970-03-20 Laser applied surface film Expired FR2083740A5 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR7010165A FR2083740A5 (en) 1970-03-20 1970-03-20 Laser applied surface film
NL7103634A NL7103634A (en) 1970-03-20 1971-03-18
DE19712113336 DE2113336A1 (en) 1970-03-20 1971-03-19 Device for applying thin layers of material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7010165A FR2083740A5 (en) 1970-03-20 1970-03-20 Laser applied surface film

Publications (1)

Publication Number Publication Date
FR2083740A5 true FR2083740A5 (en) 1971-12-17

Family

ID=9052652

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7010165A Expired FR2083740A5 (en) 1970-03-20 1970-03-20 Laser applied surface film

Country Status (3)

Country Link
DE (1) DE2113336A1 (en)
FR (1) FR2083740A5 (en)
NL (1) NL7103634A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0213556A2 (en) * 1985-08-23 1987-03-11 Elektroschmelzwerk Kempten GmbH Apparatus for the continuous evaporation of inorganic compounds using a photon-producing thermal-radiation source
EP0483782A2 (en) * 1990-11-02 1992-05-06 Heraeus Noblelight GmbH Metallising process
WO1995007368A1 (en) * 1993-09-08 1995-03-16 Commissariat A L'energie Atomique Device with miniaturized photoionic head for the treatment of a material

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2594853A1 (en) * 1986-02-25 1987-08-28 Commissariat Energie Atomique METHOD AND DEVICE FOR TREATING A THERMO-IONIC EFFECT MATERIAL IN ORDER TO MODIFY ITS PHYSICO-CHEMICAL PROPERTIES
US4752455A (en) * 1986-05-27 1988-06-21 Kms Fusion, Inc. Pulsed laser microfabrication
JPH0361366A (en) * 1989-07-28 1991-03-18 Matsushita Electric Ind Co Ltd Laser beam sputtering device
DE4232373A1 (en) * 1992-09-03 1994-03-10 Deutsche Forsch Luft Raumfahrt Structural semiconductor layer deposition method - heating applied film using laser beam, to transfer the film material to surface of substrate
EP0740324B1 (en) * 1993-12-22 1999-04-21 Canon Kabushiki Kaisha Method of manufacturing an electron-emitting device
US5904961A (en) * 1997-01-24 1999-05-18 Eastman Kodak Company Method of depositing organic layers in organic light emitting devices
JP4240423B2 (en) * 1998-04-24 2009-03-18 中部キレスト株式会社 Target material for forming metal oxide thin film, method for producing the same, and method for forming metal oxide thin film using the target material
US6936311B2 (en) 1999-01-27 2005-08-30 The United States Of America As Represented By The Secretary Of The Navy Generation of biomaterial microarrays by laser transfer
US6177151B1 (en) * 1999-01-27 2001-01-23 The United States Of America As Represented By The Secretary Of The Navy Matrix assisted pulsed laser evaporation direct write
US6905738B2 (en) 1999-01-27 2005-06-14 The United States Of America As Represented By The Secretary Of The Navy Generation of viable cell active biomaterial patterns by laser transfer
AU2514800A (en) 1999-01-27 2000-08-18 United States Of America As Represented By The Secretary Of The Navy, The Matrix assisted pulsed laser evaporation direct write
JP5416987B2 (en) * 2008-02-29 2014-02-12 株式会社半導体エネルギー研究所 Film forming method and light emitting device manufacturing method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0213556A2 (en) * 1985-08-23 1987-03-11 Elektroschmelzwerk Kempten GmbH Apparatus for the continuous evaporation of inorganic compounds using a photon-producing thermal-radiation source
EP0213556A3 (en) * 1985-08-23 1988-11-09 Elektroschmelzwerk Kempten GmbH Apparatus for the continuous evaporation of inorganic compounds using a photon-producing thermal-radiation source
EP0483782A2 (en) * 1990-11-02 1992-05-06 Heraeus Noblelight GmbH Metallising process
EP0483782A3 (en) * 1990-11-02 1993-12-01 Heraeus Noblelight Gmbh Metallising process
WO1995007368A1 (en) * 1993-09-08 1995-03-16 Commissariat A L'energie Atomique Device with miniaturized photoionic head for the treatment of a material
FR2709763A1 (en) * 1993-09-08 1995-03-17 Commissariat Energie Atomique Device for processing a material, with miniaturized photo-ion head.
US5760362A (en) * 1993-09-08 1998-06-02 Commissariat A L'energie Atomique Apparatus for treating a material having a miniaturized photoionic head

Also Published As

Publication number Publication date
NL7103634A (en) 1971-09-22
DE2113336A1 (en) 1971-09-30

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Legal Events

Date Code Title Description
ST Notification of lapse