JPS63244755A - Formation of conductive layer - Google Patents
Formation of conductive layerInfo
- Publication number
- JPS63244755A JPS63244755A JP7779187A JP7779187A JPS63244755A JP S63244755 A JPS63244755 A JP S63244755A JP 7779187 A JP7779187 A JP 7779187A JP 7779187 A JP7779187 A JP 7779187A JP S63244755 A JPS63244755 A JP S63244755A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- substrate
- conductive wiring
- layer
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 239000011261 inert gas Substances 0.000 claims abstract description 3
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 4
- 230000001678 irradiating effect Effects 0.000 abstract description 4
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 14
- 230000031700 light absorption Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 238000001953 recrystallisation Methods 0.000 description 5
- 230000001846 repelling effect Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明は半導体装置における導電層の形成り法において
、
バターニングしたアルミニウム又はその合金等の導電性
配線をエネルギ線照射によって一時的に溶融して再結晶
化した場合にその断面形状が円形となり、この表面に絶
縁膜を施す場合に上方部分に絶縁膜が確実に堆積しない
という従来の問題点を解決するため、
上記エネルギ線照射時に上記導電性配線の）地層を加熱
することにより、
再結晶化した後の断面形状を裾広がり状にし、もって絶
縁膜を確実に堆積せしめ得るようにしたものである。[Detailed Description of the Invention] [Summary] The present invention is a method for forming a conductive layer in a semiconductor device, in which conductive wiring made of patterned aluminum or its alloy is temporarily melted and recrystallized by energy beam irradiation. In order to solve the conventional problem that the cross-sectional shape becomes circular when the conductive wiring is irradiated with the energy beam, the insulating film cannot be reliably deposited on the upper part when applying the insulating film on this surface. By heating the geological layer, the cross-sectional shape after recrystallization becomes wider, thereby making it possible to reliably deposit an insulating film.
本発明は配線として使用する目的でバターニングしたア
ルミニウム又はその合金をパルス状のエネルギ線照射に
よって一時的に溶融して再結晶化する導電層の形成方法
に関する。The present invention relates to a method for forming a conductive layer in which patterned aluminum or its alloy is temporarily melted and recrystallized by pulsed energy beam irradiation for use as wiring.
このように導電性配線を一時的に溶融して再結晶化する
方法はピアホールの埋込みや′！！Ｉ電性配線を平坦化
する目的で従来用いられているが、再結晶化後のその断
面形状は円形となって下方部分（逆テーパ）に絶縁層が
確実に堆積しないのが現状である。このため、この上方
部分にも絶縁層を確実に堆積せしめ得る形成方法が必要
である。Methods for temporarily melting conductive wiring and recrystallizing it in this way include burying peer holes and '! ! Although it has been conventionally used for the purpose of flattening I-conductor wiring, the current situation is that the cross-sectional shape after recrystallization becomes circular and an insulating layer cannot be deposited reliably on the lower part (reverse taper). Therefore, there is a need for a formation method that can reliably deposit an insulating layer also in this upper portion.
従来、第４図（４）に示す基板１上のアルミニウムパタ
ーン２をパルス状のエネルギ線照射によって一時的に溶
融して再結晶化し、第４図（Ｂ）に示すアルミニウムパ
ターン２′を得る。再結晶化したアルミニウムパターン
２′の断面形状はいわゆる「弾かれ現象」により、第４
図（Ｂ）に示すように円形となる。この「弾かれ現象」
はアルミニウムパターン２が溶融状態にある時、その上
地層である基板１との間に温度差がある（基板１の温度
が溶融状態にあるアルミニウムパターン２に対して極め
て低温）ために生じる。Conventionally, an aluminum pattern 2 on a substrate 1 shown in FIG. 4(4) is temporarily melted and recrystallized by pulsed energy beam irradiation to obtain an aluminum pattern 2' shown in FIG. 4(B). The cross-sectional shape of the recrystallized aluminum pattern 2' is due to the so-called "repulsion phenomenon".
It becomes circular as shown in Figure (B). This “repelling phenomenon”
This occurs because when the aluminum pattern 2 is in a molten state, there is a temperature difference between it and the substrate 1 which is the upper layer (the temperature of the substrate 1 is extremely low compared to the aluminum pattern 2 in a molten state).
この場合、従来、エネルギ線照射時、基板１は室温にし
てあり、エネルギ線照射によってアルミニウムパターン
２は溶融するまで加熱されるが、基板１は殆ど加熱され
ない状態にあった。In this case, conventionally, the substrate 1 was kept at room temperature during the energy beam irradiation, and although the aluminum pattern 2 was heated until it melted by the energy beam irradiation, the substrate 1 was hardly heated.
従来の方法は、アルミニウムパターン２を溶融して再結
晶化するとその断面形状は円形となり、このため、この
表面に絶縁膜を施す場合、基板１との間の下方部分（逆
テーバ）３に絶縁膜が堆積しないことになり、いわゆる
髭を生じ、高品質のものを得られない問題点があった。In the conventional method, when the aluminum pattern 2 is melted and recrystallized, its cross-sectional shape becomes circular. Therefore, when applying an insulating film to this surface, an insulating layer is formed on the lower part (inverted tapered) 3 between the aluminum pattern 2 and the substrate 1. There was a problem that the film was not deposited, so-called whiskers were produced, and high quality products could not be obtained.
（問題点を解決するための手段）
第１図は本発明方法の原即図を示す。同図中、９は配線
として使用する目的でバターニングされた例えばアルミ
ニウム又はその合金等の導電性配線、２０は下地層、１
１はエキシマレーザ光等のエネルギ線である。(Means for solving the problem) FIG. 1 shows an original diagram of the method of the present invention. In the figure, 9 is a conductive wiring made of aluminum or its alloy, etc., which is patterned for the purpose of wiring, 20 is a base layer, and 1
1 is an energy line such as excimer laser light.
本発明方法は、バターニングされた導電性配線９をエネ
ルギ線１１照射にて一時的に溶融後、再結晶化する導電
層の形成方法において、エネルギ線１１照射時、導電性
配線９の下地層２０を加熱する。The method of the present invention is a method for forming a conductive layer in which a patterned conductive wiring 9 is temporarily melted by irradiation with an energy beam 11 and then recrystallized. Heat 20.
エネルギ線１１を照射することによりＩＰ電性配Ｂ９を
溶融し、これと同時に１電性配線９の下地１！ （２０
）を加熱する。下地１ｍ２０の加熱により、導電性配線
９が溶融状態にある時に下地層との間の温度差が少なく
なり、「弾かれ現象」を生じることはなく、再結晶化後
、ｌ？Ｉｔ性配線の断面形状は裾広がり状になる。By irradiating the energy beam 11, the IP conductive wiring B9 is melted, and at the same time, the base 1 of the conductive wiring 9 is melted! (20
). By heating 1 m20 of the base layer, when the conductive wiring 9 is in a molten state, the temperature difference between it and the base layer is reduced, and the "repelling phenomenon" does not occur, and after recrystallization, the l? The cross-sectional shape of the It-based wiring has a widening shape.
第２図は本発明方法の第１実施例を説明するための図を
示す。第２図（４）中、４はチャンバで、この中のＸ−
Ｙステージ５上にヒータ６、その更に上にサンプル７が
載置されている。サンプル７は第２図（Ｂ）に示す如く
、シリコン基板８上に酸化シリコン（Ｓ！０２）等の絶
縁膜１７（厚さ５０００Ａ ） 、その上に配線として
使用する目的でバターニングされたアルミニウムパター
ン又はその合金である導電性配線９（例えば、厚さ１μ
−９幅１μｓ）が設けられている。FIG. 2 shows a diagram for explaining a first embodiment of the method of the present invention. In Fig. 2 (4), 4 is a chamber, and X-
A heater 6 is placed on the Y stage 5, and a sample 7 is placed further above it. Sample 7, as shown in FIG. 2(B), has an insulating film 17 (thickness 5000A) made of silicon oxide (S!02) etc. on a silicon substrate 8, and a patterned aluminum film on it for the purpose of wiring. Conductive wiring 9 that is a pattern or its alloy (for example, 1μ thick)
-9 width 1 μs).
サンプル７の裏面にヒータ６を配置し、導電性配［１９
溶融時にヒータ６でサンプル７の基板８及び絶縁ｇ！１
７を加熱する点が本実施例の要部である。Heater 6 was placed on the back side of sample 7, and conductive wiring [19
During melting, the substrate 8 and insulation g of the sample 7 are heated by the heater 6! 1
7 is the main part of this embodiment.
第２図（４）中、１０は例えばパワー１Ｊ／ｃｉのエキ
シマレーザ光（フッ化アルゴン（Ａｒ Ｆ））等のレー
ザ光源で、レーザ光（エネルギ線）１１゜ミラー１２．
チャンバ４の窓１３を介してサンプル７に照射する。基
板８及び絶縁１１１７の加熱は比較的長時間であり、こ
れによってアルミニウムパターンの導電性配線ｍ９が酸
化されるのを防止するため、チャンバ４内には例えば窒
素（或いはヘリウム、アルゴン等）の不活性ガスが導入
されているか、又は、真空にされている。In FIG. 2 (4), 10 is a laser light source such as an excimer laser beam (argon fluoride (Ar F)) with a power of 1 J/ci, and a laser beam (energy line) 11.degree. mirror 12.
The sample 7 is irradiated through the window 13 of the chamber 4 . The substrate 8 and the insulation 1117 are heated for a relatively long time, and in order to prevent the conductive wiring m9 of the aluminum pattern from being oxidized, the chamber 4 is filled with nitrogen (or helium, argon, etc.). An active gas is introduced or a vacuum is applied.
ここで、レーザ光１１を照射することによりサンプル７
の導電性配線９を溶融し、一方、これと同時に、ヒータ
６によりサンプル７の基板８及び絶縁膜１７全体を例え
ば最大で３００℃に加熱する。Here, by irradiating the laser beam 11, the sample 7 is
At the same time, the entire substrate 8 and insulating film 17 of the sample 7 are heated to, for example, a maximum of 300° C. by the heater 6.
基板８及び絶縁膜１７の加熱により、導電性配線９が溶
融状態にある時に基板８及び絶縁膜１７との間の温度差
が少なくなり、前述の「弾かれ現象」を生じることはな
く、再結晶化後、第２図（Ｃ）に示すように導電性配線
９′の断面形状は裾広がり状になる。By heating the substrate 8 and the insulating film 17, the temperature difference between the substrate 8 and the insulating film 17 is reduced when the conductive wiring 9 is in a molten state, so that the above-mentioned "repelling phenomenon" does not occur, and it is possible to reuse it. After crystallization, the cross-sectional shape of the conductive wiring 9' becomes wide as shown in FIG. 2(C).
このように導電性配線９′の断面形状を裾広がり状にし
得るので、この表面に絶縁膜を施す場合、第４図（Ｂ）
に示す従来例のような下方部分３がないので絶縁膜が堆
積しない部分はなく、一様に確実に絶縁膜を堆積せしめ
得る。In this way, the cross-sectional shape of the conductive wiring 9' can be made into a widening shape, so when an insulating film is applied to this surface, as shown in FIG. 4(B).
Since there is no lower part 3 as in the conventional example shown in FIG. 1, there is no part where the insulating film is not deposited, and the insulating film can be deposited uniformly and reliably.
第３図は本発明方法の第２実施例を説明するための図を
示し、同図中、第２図と同一構成部分には同一番号を付
してその説明を省略する。第３図（４）中、１４はサン
プルで、Ｘ−Ｙステージ５の上に直接載置されている。FIG. 3 shows a diagram for explaining a second embodiment of the method of the present invention. In the figure, the same components as those in FIG. 2 are given the same numbers and their explanations will be omitted. In FIG. 3(4), 14 is a sample, which is placed directly on the XY stage 5.
サンプル１４は第３図（Ｂ）に示す如く、シリコン基板
８上に酸化シリコン（ＳｆＯｚ）等の絶縁膜（厚さ４０
００人）１５、その上に窒化シリコン（Ｓｉ３Ｎ４）等
のレーザ光吸収層（エネルギ線吸収層）（厚さ１０００
人）１６が設けられている。レーザ光吸収層１６は、フ
ッ化アルゴン（Ａｒ Ｆ）のエキシマレーザ（波長１９
３ｎｓ＋ ）に対して高い吸収係数を示し、絶縁！ｉ１
５はレーザ光１１を殆ど吸収しないものを用いる。絶縁
膜１５及びレーザ光吸収Ｆ１１６にて層間絶縁膜が形成
されている。レーザ光吸収層１６上に配線として使用す
る目的でバターニングされたアルミニウムパターン又は
その合金である導電性配線９が設けられている。As shown in FIG. 3(B), the sample 14 has an insulating film (thickness: 40 mm) made of silicon oxide (SfOz) on a silicon substrate 8.
00 people) 15, on which a laser light absorption layer (energy beam absorption layer) such as silicon nitride (Si3N4) (thickness 1000
16 persons) are provided. The laser light absorption layer 16 is made of argon fluoride (ArF) excimer laser (wavelength 19
It shows a high absorption coefficient for 3ns+) and is insulating! i1
5 uses a material that hardly absorbs the laser beam 11. An interlayer insulating film is formed by the insulating film 15 and the laser light absorbing film F116. A conductive wiring 9 made of a patterned aluminum pattern or an alloy thereof is provided on the laser light absorption layer 16 for the purpose of being used as a wiring.
導電性配線９の下地としてレーザ光吸収層１６を配置し
、レーザ光１１で導電性配線９溶融時にレーザ光１１を
レーザ光吸収ｌ！Ｊ１６に吸収させてこれを加熱する点
が本実施例の要部である。A laser light absorption layer 16 is arranged as a base of the conductive wiring 9, and when the conductive wiring 9 is melted by the laser beam 11, the laser light 11 is absorbed by the laser beam 1! The main part of this embodiment is to absorb it into J16 and heat it.
なお、レーザ光１１による加熱時間は比較的短時間であ
り、このために導電性配［１９は酸化する虞れがないた
め、チャンバ４内は上記第１実施例のような不活性ガス
や真空でなくてよい。Note that the heating time by the laser beam 11 is relatively short, and therefore there is no risk of oxidation of the conductive wiring [19], so the interior of the chamber 4 is not exposed to inert gas or vacuum as in the first embodiment. It doesn't have to be.
ここで、レーザ光１１を照射することによりサンプル１
４のＳ電性配線９を溶融する。この場合、レーザ光１１
はレーザ光吸収層１６にも照射され、これにより、レー
ザ光吸収層１６はレーザ光１１を吸収し、加熱される。Here, by irradiating the laser beam 11, the sample 1 is
The S conductive wiring 9 of No. 4 is melted. In this case, the laser beam 11
is also applied to the laser light absorption layer 16, whereby the laser light absorption layer 16 absorbs the laser light 11 and is heated.
レーザ光吸収層１６の加熱により、前記第１実施例と同
様に、導電性配線９が溶融状態にある時にそのＦ地層と
の間の温度差が少なくなり、前述の「弾かれ現象、１を
生じることはなく、再結晶化後、第３図（Ｃ）に示すよ
うに導電性配線９′の断面形状は裾広がり状になり、一
様に確実に絶縁膜を堆積せしめ得る。By heating the laser light absorption layer 16, the temperature difference between the conductive wiring 9 and the F layer when it is in a molten state is reduced, as in the first embodiment, and the above-mentioned "repulsion phenomenon", 1. This does not occur, and after recrystallization, the cross-sectional shape of the conductive wiring 9' becomes wide as shown in FIG. 3(C), and the insulating film can be deposited uniformly and reliably.
本発明によれば、導電性配線が溶融状態にある時に下地
層との間の温度差が少なくなり、「弾かれ現象」を生じ
ることはなく、再結晶化後、導電性配線の断面形状は裾
広がり状になり、これにより、表面に絶縁膜を施す場合
、従来例のような下方部分（逆テーパ）がないので一様
に確実に絶縁膜を堆積せしめ得、高品質の半導体装置を
得ることができる。According to the present invention, when the conductive wiring is in a molten state, the temperature difference between the conductive wiring and the underlying layer is reduced, and the "repelling phenomenon" does not occur, and the cross-sectional shape of the conductive wiring after recrystallization is As a result, when an insulating film is applied to the surface, the insulating film can be deposited uniformly and reliably because there is no lower part (reverse taper) as in the conventional example, and a high quality semiconductor device can be obtained. be able to.
第１図は本発明方法の原理図、
第２図及び第３図は夫々本発明方法の第１及び第２実施
例を説明する図、
第４図は「譬かれ現象」を説明する図である。
図において、
４はチャンバ、
５はＸ−Ｙステージ、
６はヒータ、
７．１４はサンプル、
８は基板、
９．９′は導電性配線、
１０はレーザ光源、
１１はレーザ光（エネルギ線）、
１５．１７は絶縁膜、
１６はレーザ光吸収層（エネルギ線吸収層）ある。Figure 1 is a diagram showing the principle of the method of the present invention, Figures 2 and 3 are diagrams explaining the first and second embodiments of the method of the present invention, respectively, and Figure 4 is a diagram explaining the "false phenomenon". be. In the figure, 4 is a chamber, 5 is an X-Y stage, 6 is a heater, 7.14 is a sample, 8 is a substrate, 9.9' is a conductive wiring, 10 is a laser light source, 11 is a laser beam (energy line) , 15 and 17 are insulating films, and 16 is a laser light absorption layer (energy ray absorption layer).
Claims (4)
線（１１）照射にて一時的に溶融後、再結晶化する導電
層の形成方法において、 上記エネルギ線（１１）照射時、上記導電性配線（９）
の下地層（２０）を加熱することを特徴とする導電層の
形成方法。(1) In a method for forming a conductive layer in which a patterned conductive wiring (9) is temporarily melted by irradiation with an energy beam (11) and then recrystallized, when the conductive wiring (9) is irradiated with an energy beam (11), Wiring (9)
A method for forming a conductive layer, the method comprising heating a base layer (20).
設けられた基板（８）であり、該基板（８）をヒータ（
６）で加熱することを特徴とする特許請求の範囲第１項
記載の導電層の形成方法。(2) The base layer (20) is a substrate (8) provided below the conductive wiring (9), and the substrate (8) is connected to a heater (
6) The method for forming a conductive layer according to claim 1, wherein the conductive layer is heated in step 6).
（８）との間にあり、該導電性配線（９）の下に直接設
けられた該エネルギ線（１１）に対して強い吸収を示す
エネルギ線吸収層（１６）であり、該エネルギ線吸収層
（１６）に該エネルギ線（１１）を吸収せしめてこれを
加熱することを特徴とする特許請求の範囲第１項記載の
導電層の形成方法。(3) The base layer (20) is located between the conductive wiring (9) and the substrate (8), and is connected to the energy line (11) provided directly under the conductive wiring (9). Claim 1, characterized in that the energy ray absorbing layer (16) exhibits strong absorption against the energy rays, and the energy ray absorbing layer (16) absorbs the energy rays (11) to heat the energy rays (11). A method for forming a conductive layer as described in .
を不活性ガス中、又は真空中に置くことを特徴とする特
許請求の範囲第２項記載の導電層の形成方法。(4) The method for forming a conductive layer according to claim 2, wherein the semiconductor device is placed in an inert gas or a vacuum when heating with the heater (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7779187A JPS63244755A (en) | 1987-03-31 | 1987-03-31 | Formation of conductive layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7779187A JPS63244755A (en) | 1987-03-31 | 1987-03-31 | Formation of conductive layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63244755A true JPS63244755A (en) | 1988-10-12 |
Family
ID=13643808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7779187A Pending JPS63244755A (en) | 1987-03-31 | 1987-03-31 | Formation of conductive layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63244755A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0479331A (en) * | 1990-07-23 | 1992-03-12 | Matsushita Electron Corp | Method of forming electrodes |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS566434A (en) * | 1979-06-28 | 1981-01-23 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
| JPS5797647A (en) * | 1980-12-10 | 1982-06-17 | Toshiba Corp | Forming of electrode wiring in semiconductor device |
-
1987
- 1987-03-31 JP JP7779187A patent/JPS63244755A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS566434A (en) * | 1979-06-28 | 1981-01-23 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
| JPS5797647A (en) * | 1980-12-10 | 1982-06-17 | Toshiba Corp | Forming of electrode wiring in semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0479331A (en) * | 1990-07-23 | 1992-03-12 | Matsushita Electron Corp | Method of forming electrodes |
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