JPS5660028A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5660028A
JPS5660028A JP13547479A JP13547479A JPS5660028A JP S5660028 A JPS5660028 A JP S5660028A JP 13547479 A JP13547479 A JP 13547479A JP 13547479 A JP13547479 A JP 13547479A JP S5660028 A JPS5660028 A JP S5660028A
Authority
JP
Japan
Prior art keywords
insulating film
film
polycrystalline
noncrystalline
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13547479A
Other languages
Japanese (ja)
Other versions
JPS6239531B2 (en
Inventor
Osamu Hataishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13547479A priority Critical patent/JPS5660028A/en
Publication of JPS5660028A publication Critical patent/JPS5660028A/en
Publication of JPS6239531B2 publication Critical patent/JPS6239531B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Abstract

PURPOSE:To prevent the formation of a bird beak at the end of the interelement insulation isolation region of the subject semiconductor device by a method wherein a polycrystalline or a noncrystalline semiconductor layer is coated on the surface of the semiconductor substrate surrounded by an insulating film and is converted to single crystal using a laser beam or an electron beam. CONSTITUTION:An insulating film 11 with a desired thickness is formed on the surface of a silicon substrate 10 and the insulating film is selectively removed by a plasma etching method or the like using a photoresist film 13 as a mask. After that, a polycrystalline silicon layer on noncrystalline silicon layers 14 and 14' are formed on an aperture 12 and the resist film 13 with the same thickness as that of the insulating film 11. Then the resist film 13 and the silicon layer above the film 13 are removed. Next, the polycrystalline or noncrystalline silicon layer is converted to single crystal by irradiating a laser beam or an electron beam and an element forming region 15 is formed. When forming a junction 4 by an ion injection, a flat junction can be hereby formed with an unbent end section 5.
JP13547479A 1979-10-19 1979-10-19 Manufacture of semiconductor device Granted JPS5660028A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13547479A JPS5660028A (en) 1979-10-19 1979-10-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13547479A JPS5660028A (en) 1979-10-19 1979-10-19 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5660028A true JPS5660028A (en) 1981-05-23
JPS6239531B2 JPS6239531B2 (en) 1987-08-24

Family

ID=15152552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13547479A Granted JPS5660028A (en) 1979-10-19 1979-10-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5660028A (en)

Also Published As

Publication number Publication date
JPS6239531B2 (en) 1987-08-24

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