GB2162998A - Method of fabricating solar cells - Google Patents

Method of fabricating solar cells

Info

Publication number
GB2162998A
GB2162998A GB08516878A GB8516878A GB2162998A GB 2162998 A GB2162998 A GB 2162998A GB 08516878 A GB08516878 A GB 08516878A GB 8516878 A GB8516878 A GB 8516878A GB 2162998 A GB2162998 A GB 2162998A
Authority
GB
United Kingdom
Prior art keywords
solar cells
surface layer
altered
fabricating solar
interelectrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB08516878A
Other versions
GB8516878D0 (en
GB2162998B (en
Inventor
Jack I Hanoka
Douglas A Yates
James A Gregory
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott Solar CSP Inc
Original Assignee
Mobil Solar Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/681,498 external-priority patent/US4557037A/en
Application filed by Mobil Solar Energy Corp filed Critical Mobil Solar Energy Corp
Publication of GB8516878D0 publication Critical patent/GB8516878D0/en
Publication of GB2162998A publication Critical patent/GB2162998A/en
Application granted granted Critical
Publication of GB2162998B publication Critical patent/GB2162998B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Medicines Containing Plant Substances (AREA)

Abstract

A solar cell fabrication procedure in which a hydrogen ion passivation step is used to form, inter alia, an altered silicon substrate surface layer (18) to which immersion plated nickel (20) will not readily adhere. The altered surface layer is formed by shadow casting an ion beam (16) in a pattern corresponding to the desired front surface interelectrode configuration.
GB08516878A 1983-12-19 1984-12-14 Method of fabricating solar cells Expired GB2162998B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US56313283A 1983-12-19 1983-12-19
US66697384A 1984-10-31 1984-10-31
US06/681,498 US4557037A (en) 1984-10-31 1984-12-13 Method of fabricating solar cells
PCT/US1984/002066 WO1985002943A1 (en) 1983-12-19 1984-12-14 Method of fabricating solar cells

Publications (3)

Publication Number Publication Date
GB8516878D0 GB8516878D0 (en) 1985-08-07
GB2162998A true GB2162998A (en) 1986-02-12
GB2162998B GB2162998B (en) 1987-09-30

Family

ID=27415906

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08516878A Expired GB2162998B (en) 1983-12-19 1984-12-14 Method of fabricating solar cells

Country Status (8)

Country Link
EP (1) EP0165990A4 (en)
AU (1) AU573696B2 (en)
CH (1) CH668861A5 (en)
DE (1) DE3490611T1 (en)
GB (1) GB2162998B (en)
NL (1) NL8420337A (en)
SE (1) SE456626B (en)
WO (1) WO1985002943A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2162996B (en) * 1983-12-19 1987-08-12 Mobil Solar Energy Corp Method of fabricating solar cells
US4650695A (en) * 1985-05-13 1987-03-17 Mobil Solar Energy Corporation Method of fabricating solar cells
WO2016193409A1 (en) * 2015-06-04 2016-12-08 Imec Vzw Methods for forming metal electrodes on silicon surfaces of opposite polarity

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3805376A (en) * 1971-12-02 1974-04-23 Bell Telephone Labor Inc Beam-lead electroluminescent diodes and method of manufacture
US4086102A (en) * 1976-12-13 1978-04-25 King William J Inexpensive solar cell and method therefor
US4224084A (en) * 1979-04-16 1980-09-23 Rca Corporation Method and structure for passivating a semiconductor device
US4332253A (en) * 1980-04-15 1982-06-01 The Kendall Company Disposable diaper and top sheet therefor
US4472458A (en) * 1982-01-27 1984-09-18 Bayer Aktiengesellschaft Process for the production of metallized semiconductors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4124826A (en) * 1977-03-01 1978-11-07 Bell Telephone Laboratories, Incorporated Current confinement in semiconductor lasers
US4238694A (en) * 1977-05-23 1980-12-09 Bell Telephone Laboratories, Incorporated Healing radiation defects in semiconductors
US4321283A (en) * 1979-10-26 1982-03-23 Mobil Tyco Solar Energy Corporation Nickel plating method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3805376A (en) * 1971-12-02 1974-04-23 Bell Telephone Labor Inc Beam-lead electroluminescent diodes and method of manufacture
US4086102A (en) * 1976-12-13 1978-04-25 King William J Inexpensive solar cell and method therefor
US4224084A (en) * 1979-04-16 1980-09-23 Rca Corporation Method and structure for passivating a semiconductor device
US4332253A (en) * 1980-04-15 1982-06-01 The Kendall Company Disposable diaper and top sheet therefor
US4472458A (en) * 1982-01-27 1984-09-18 Bayer Aktiengesellschaft Process for the production of metallized semiconductors

Also Published As

Publication number Publication date
SE8503835D0 (en) 1985-08-16
GB8516878D0 (en) 1985-08-07
SE8503835L (en) 1985-08-16
NL8420337A (en) 1985-11-01
SE456626B (en) 1988-10-17
DE3490611T1 (en) 1985-11-28
EP0165990A1 (en) 1986-01-02
EP0165990A4 (en) 1989-01-19
AU573696B2 (en) 1988-06-16
AU3889085A (en) 1985-07-12
CH668861A5 (en) 1989-01-31
WO1985002943A1 (en) 1985-07-04
GB2162998B (en) 1987-09-30

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee