JPS57178331A - Plasma reaction device - Google Patents

Plasma reaction device

Info

Publication number
JPS57178331A
JPS57178331A JP6249381A JP6249381A JPS57178331A JP S57178331 A JPS57178331 A JP S57178331A JP 6249381 A JP6249381 A JP 6249381A JP 6249381 A JP6249381 A JP 6249381A JP S57178331 A JPS57178331 A JP S57178331A
Authority
JP
Japan
Prior art keywords
meshes
recesses
parts
suscepter
composes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6249381A
Other languages
Japanese (ja)
Inventor
Yoshiaki Ishii
Masakuni Akiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6249381A priority Critical patent/JPS57178331A/en
Publication of JPS57178331A publication Critical patent/JPS57178331A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To improve the forming speed of a film formed by plasma by providing meshes of conductive material to the side, facing another electrode, of wafer holding parts of one electrode. CONSTITUTION:An electrode plate 14, which composes an anode, and a suscepter 16, which composes a cathode, are placed in a plasma chamber which consists of an upper chamber 10 and a lower chamber 12. Meshes 30 made of conductive material such as aluminum are fitted under the recesses 26 where wafers 28 are held in such a manner that the meshes 30 cover the lower parts of the recesses 26. With this constitution, the sufficiently strong electric field is applied to the lower part of the wafer holding recesses 26 as well as other parts of the suscepter, so that the film forming efficiency is improved and the film forming speed is increased.
JP6249381A 1981-04-27 1981-04-27 Plasma reaction device Pending JPS57178331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6249381A JPS57178331A (en) 1981-04-27 1981-04-27 Plasma reaction device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6249381A JPS57178331A (en) 1981-04-27 1981-04-27 Plasma reaction device

Publications (1)

Publication Number Publication Date
JPS57178331A true JPS57178331A (en) 1982-11-02

Family

ID=13201745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6249381A Pending JPS57178331A (en) 1981-04-27 1981-04-27 Plasma reaction device

Country Status (1)

Country Link
JP (1) JPS57178331A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0642561U (en) * 1992-11-19 1994-06-07 株式会社正喜商会 Anti-slip device for crawlers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0642561U (en) * 1992-11-19 1994-06-07 株式会社正喜商会 Anti-slip device for crawlers

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