JPS54128668A - Manufacture for electronic component device - Google Patents
Manufacture for electronic component deviceInfo
- Publication number
- JPS54128668A JPS54128668A JP3610378A JP3610378A JPS54128668A JP S54128668 A JPS54128668 A JP S54128668A JP 3610378 A JP3610378 A JP 3610378A JP 3610378 A JP3610378 A JP 3610378A JP S54128668 A JPS54128668 A JP S54128668A
- Authority
- JP
- Japan
- Prior art keywords
- boundary
- substrate
- ions
- manufacture
- electronic component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To produce good contact, by destructing or deteriorating the oxide film between layers through the implanting ions consisting of the constituent element at the boundary of the first and second conduction layers.
CONSTITUTION: Opening is made at the SiO2 12 on the Si substrate being the first conductive layer and the doped polycrystal Si 11 is laminated as the second conductive layer. Next, the Si ions being the constituent element of the substrate 10 and the polycrystal Si 11 are injected and the insulation of the SiO2 film on the boundary A is deteriorated as excessive ions, and further, damage or destruction is made physically. After that, when processing is made at 500 to 1200°C and the damage is restored, the poly Si is strongly contacted with the substrate and good electric contact is obtained at the boundary A.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3610378A JPS54128668A (en) | 1978-03-30 | 1978-03-30 | Manufacture for electronic component device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3610378A JPS54128668A (en) | 1978-03-30 | 1978-03-30 | Manufacture for electronic component device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54128668A true JPS54128668A (en) | 1979-10-05 |
Family
ID=12460424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3610378A Pending JPS54128668A (en) | 1978-03-30 | 1978-03-30 | Manufacture for electronic component device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54128668A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57167676A (en) * | 1981-03-20 | 1982-10-15 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
JPS6068611A (en) * | 1983-09-26 | 1985-04-19 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS61224437A (en) * | 1985-03-29 | 1986-10-06 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS6218733A (en) * | 1985-07-17 | 1987-01-27 | Nec Corp | Manufacture of semiconductor device |
US4906591A (en) * | 1987-12-14 | 1990-03-06 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device having an electric contact portion |
-
1978
- 1978-03-30 JP JP3610378A patent/JPS54128668A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57167676A (en) * | 1981-03-20 | 1982-10-15 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
JPS6068611A (en) * | 1983-09-26 | 1985-04-19 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS61224437A (en) * | 1985-03-29 | 1986-10-06 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS6218733A (en) * | 1985-07-17 | 1987-01-27 | Nec Corp | Manufacture of semiconductor device |
US4906591A (en) * | 1987-12-14 | 1990-03-06 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device having an electric contact portion |
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