JPS54128668A - Manufacture for electronic component device - Google Patents

Manufacture for electronic component device

Info

Publication number
JPS54128668A
JPS54128668A JP3610378A JP3610378A JPS54128668A JP S54128668 A JPS54128668 A JP S54128668A JP 3610378 A JP3610378 A JP 3610378A JP 3610378 A JP3610378 A JP 3610378A JP S54128668 A JPS54128668 A JP S54128668A
Authority
JP
Japan
Prior art keywords
boundary
substrate
ions
manufacture
electronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3610378A
Other languages
Japanese (ja)
Inventor
Tomoyasu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3610378A priority Critical patent/JPS54128668A/en
Publication of JPS54128668A publication Critical patent/JPS54128668A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To produce good contact, by destructing or deteriorating the oxide film between layers through the implanting ions consisting of the constituent element at the boundary of the first and second conduction layers.
CONSTITUTION: Opening is made at the SiO2 12 on the Si substrate being the first conductive layer and the doped polycrystal Si 11 is laminated as the second conductive layer. Next, the Si ions being the constituent element of the substrate 10 and the polycrystal Si 11 are injected and the insulation of the SiO2 film on the boundary A is deteriorated as excessive ions, and further, damage or destruction is made physically. After that, when processing is made at 500 to 1200°C and the damage is restored, the poly Si is strongly contacted with the substrate and good electric contact is obtained at the boundary A.
COPYRIGHT: (C)1979,JPO&Japio
JP3610378A 1978-03-30 1978-03-30 Manufacture for electronic component device Pending JPS54128668A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3610378A JPS54128668A (en) 1978-03-30 1978-03-30 Manufacture for electronic component device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3610378A JPS54128668A (en) 1978-03-30 1978-03-30 Manufacture for electronic component device

Publications (1)

Publication Number Publication Date
JPS54128668A true JPS54128668A (en) 1979-10-05

Family

ID=12460424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3610378A Pending JPS54128668A (en) 1978-03-30 1978-03-30 Manufacture for electronic component device

Country Status (1)

Country Link
JP (1) JPS54128668A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57167676A (en) * 1981-03-20 1982-10-15 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS6068611A (en) * 1983-09-26 1985-04-19 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS61224437A (en) * 1985-03-29 1986-10-06 Toshiba Corp Semiconductor device and manufacture thereof
JPS6218733A (en) * 1985-07-17 1987-01-27 Nec Corp Manufacture of semiconductor device
US4906591A (en) * 1987-12-14 1990-03-06 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having an electric contact portion

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57167676A (en) * 1981-03-20 1982-10-15 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS6068611A (en) * 1983-09-26 1985-04-19 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS61224437A (en) * 1985-03-29 1986-10-06 Toshiba Corp Semiconductor device and manufacture thereof
JPS6218733A (en) * 1985-07-17 1987-01-27 Nec Corp Manufacture of semiconductor device
US4906591A (en) * 1987-12-14 1990-03-06 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having an electric contact portion

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