KR960016245B1 - Capacitor manufacture method of high integrated semiconductor device - Google Patents

Capacitor manufacture method of high integrated semiconductor device Download PDF

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Publication number
KR960016245B1
KR960016245B1 KR92026719A KR920026719A KR960016245B1 KR 960016245 B1 KR960016245 B1 KR 960016245B1 KR 92026719 A KR92026719 A KR 92026719A KR 920026719 A KR920026719 A KR 920026719A KR 960016245 B1 KR960016245 B1 KR 960016245B1
Authority
KR
South Korea
Prior art keywords
semiconductor device
manufacture method
integrated semiconductor
storage electrode
high integrated
Prior art date
Application number
KR92026719A
Other languages
Korean (ko)
Other versions
KR940016829A (en
Inventor
Byung-Suk Lee
Eui-Sam Jung
Kyung-Jin Kim
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Priority to KR92026719A priority Critical patent/KR960016245B1/en
Publication of KR940016829A publication Critical patent/KR940016829A/en
Application granted granted Critical
Publication of KR960016245B1 publication Critical patent/KR960016245B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

forming a storage electrode poly(9) connected to a semiconductor substrate; depositing a thin oxide film(10); forming a rugged oxide film(10) by etching the thin oxide film(10); forming a ruggedness on the surface of the storage electrode poly(9) by etching the storage electrode poly(9) using the rugged oxide film(10) as a mask; and forming a storage electrode by an etching process using a storage electrode mask(8).
KR92026719A 1992-12-30 1992-12-30 Capacitor manufacture method of high integrated semiconductor device KR960016245B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR92026719A KR960016245B1 (en) 1992-12-30 1992-12-30 Capacitor manufacture method of high integrated semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR92026719A KR960016245B1 (en) 1992-12-30 1992-12-30 Capacitor manufacture method of high integrated semiconductor device

Publications (2)

Publication Number Publication Date
KR940016829A KR940016829A (en) 1994-07-25
KR960016245B1 true KR960016245B1 (en) 1996-12-07

Family

ID=19347854

Family Applications (1)

Application Number Title Priority Date Filing Date
KR92026719A KR960016245B1 (en) 1992-12-30 1992-12-30 Capacitor manufacture method of high integrated semiconductor device

Country Status (1)

Country Link
KR (1) KR960016245B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100663338B1 (en) * 1999-11-24 2007-01-02 삼성전자주식회사 Method For Fabricating Capacitor in Memory Cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100663338B1 (en) * 1999-11-24 2007-01-02 삼성전자주식회사 Method For Fabricating Capacitor in Memory Cell

Also Published As

Publication number Publication date
KR940016829A (en) 1994-07-25

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