KR970007834B1 - Metalizing method of semiconductor device - Google Patents

Metalizing method of semiconductor device Download PDF

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Publication number
KR970007834B1
KR970007834B1 KR93030475A KR930030475A KR970007834B1 KR 970007834 B1 KR970007834 B1 KR 970007834B1 KR 93030475 A KR93030475 A KR 93030475A KR 930030475 A KR930030475 A KR 930030475A KR 970007834 B1 KR970007834 B1 KR 970007834B1
Authority
KR
South Korea
Prior art keywords
etching
dry etching
polymer layer
conductive
semiconductor device
Prior art date
Application number
KR93030475A
Other languages
Korean (ko)
Other versions
KR950021103A (en
Inventor
Jin-Ki Jung
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Priority to KR93030475A priority Critical patent/KR970007834B1/en
Publication of KR950021103A publication Critical patent/KR950021103A/en
Application granted granted Critical
Publication of KR970007834B1 publication Critical patent/KR970007834B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A fabrication method of conductive wires having slope side face is provided to simplify the process by performing multiple dry etching. The method comprises the steps of: depositing a conductive layer(24) on a glass substrate(22); forming a groove(25) by first dry etching and a first polymer layer(27) by passivation process; second dry etching the exposed first polymer layer(27) and the conductive layer(24) for slope etching; and forming a second polymer layer(29) by second passivation process of the exposed conductive layer(24). Thereby, it is possible to easily form the conductive wire having slope side face and improve the step-coverage by using the multiple etching and passivation process.
KR93030475A 1993-12-28 1993-12-28 Metalizing method of semiconductor device KR970007834B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93030475A KR970007834B1 (en) 1993-12-28 1993-12-28 Metalizing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93030475A KR970007834B1 (en) 1993-12-28 1993-12-28 Metalizing method of semiconductor device

Publications (2)

Publication Number Publication Date
KR950021103A KR950021103A (en) 1995-07-26
KR970007834B1 true KR970007834B1 (en) 1997-05-17

Family

ID=19373480

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93030475A KR970007834B1 (en) 1993-12-28 1993-12-28 Metalizing method of semiconductor device

Country Status (1)

Country Link
KR (1) KR970007834B1 (en)

Also Published As

Publication number Publication date
KR950021103A (en) 1995-07-26

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