GB2407705A - Utilizing atomic layer deposition for programmable device - Google Patents
Utilizing atomic layer deposition for programmable device Download PDFInfo
- Publication number
- GB2407705A GB2407705A GB0501967A GB0501967A GB2407705A GB 2407705 A GB2407705 A GB 2407705A GB 0501967 A GB0501967 A GB 0501967A GB 0501967 A GB0501967 A GB 0501967A GB 2407705 A GB2407705 A GB 2407705A
- Authority
- GB
- United Kingdom
- Prior art keywords
- atomic layer
- layer deposition
- programmable device
- utilizing atomic
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000231 atomic layer deposition Methods 0.000 title abstract 4
- 239000000463 material Substances 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening (220) is formed through a dielectric (210) exposing a contact (170), the contact (170) formed on a substrate (100). An electrode (230) is conformally deposited on a wall of the dielectric (210), utilizing atomic layer deposition (ALD). A programmable material (404) is formed on the electrode (230) and a conductor (410) is formed to the programmable material (404). In an aspect, a barrier (408) is conformally deposited utilizing ALD, between the electrode (230) and the programmable material (404).
Description
GB 2407705 A continuation
(58) Field of Search by ISA:
INT CL7 GOOF, H01L Other: EPO - Internal, WPI Data, PAJ, INSPEC,
COMPENDEX
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2002/026552 WO2004032256A1 (en) | 2002-08-21 | 2002-08-21 | Utilizing atomic layer deposition for programmable device |
Publications (2)
Publication Number | Publication Date |
---|---|
GB0501967D0 GB0501967D0 (en) | 2005-03-09 |
GB2407705A true GB2407705A (en) | 2005-05-04 |
Family
ID=32067651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0501967A Withdrawn GB2407705A (en) | 2002-08-21 | 2002-08-21 | Utilizing atomic layer deposition for programmable device |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1559146A1 (en) |
JP (1) | JP2005536071A (en) |
CN (1) | CN1650443A (en) |
AU (1) | AU2002326709A1 (en) |
DE (1) | DE10297784T5 (en) |
GB (1) | GB2407705A (en) |
WO (1) | WO2004032256A1 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2003282323A1 (en) * | 2002-12-19 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Electric device comprising phase change material |
US7348590B2 (en) * | 2005-02-10 | 2008-03-25 | Infineon Technologies Ag | Phase change memory cell with high read margin at low power operation |
KR100663358B1 (en) * | 2005-02-24 | 2007-01-02 | 삼성전자주식회사 | Phase change memory devices employing cell diodes and methods of fabricating the same |
JP4817410B2 (en) * | 2005-09-12 | 2011-11-16 | エルピーダメモリ株式会社 | Phase change memory device and manufacturing method thereof |
JP4628935B2 (en) * | 2005-11-19 | 2011-02-09 | エルピーダメモリ株式会社 | Nonvolatile semiconductor memory device |
JP4860248B2 (en) * | 2005-11-26 | 2012-01-25 | エルピーダメモリ株式会社 | Phase change memory device and method of manufacturing phase change memory device |
JP4939324B2 (en) * | 2005-12-02 | 2012-05-23 | シャープ株式会社 | Variable resistance element and manufacturing method thereof |
JP4691454B2 (en) * | 2006-02-25 | 2011-06-01 | エルピーダメモリ株式会社 | Phase change memory device and manufacturing method thereof |
US7750333B2 (en) | 2006-06-28 | 2010-07-06 | Intel Corporation | Bit-erasing architecture for seek-scan probe (SSP) memory storage |
KR100911473B1 (en) * | 2007-06-18 | 2009-08-11 | 삼성전자주식회사 | Phase-change memory unit, method of forming the phase-change memory unit, phase-change memory device having the phase-change memory unit and method of manufacturing the phase-change memory device |
US8956939B2 (en) * | 2013-04-29 | 2015-02-17 | Asm Ip Holding B.V. | Method of making a resistive random access memory device |
US9362475B2 (en) | 2014-03-24 | 2016-06-07 | GM Global Technology Operations LLC | Thermoelectric material including conformal oxide layers and method of making the same using atomic layer deposition |
US9741930B2 (en) | 2015-03-27 | 2017-08-22 | Intel Corporation | Materials and components in phase change memory devices |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4268908A (en) * | 1979-02-26 | 1981-05-19 | International Business Machines Corporation | Modular macroprocessing system comprising a microprocessor and an extendable number of programmed logic arrays |
US6203613B1 (en) * | 1999-10-19 | 2001-03-20 | International Business Machines Corporation | Atomic layer deposition with nitrate containing precursors |
WO2001029893A1 (en) * | 1999-10-15 | 2001-04-26 | Asm America, Inc. | Method for depositing nanolaminate thin films on sensitive surfaces |
WO2002009206A1 (en) * | 2000-07-22 | 2002-01-31 | Ovonyx, Inc. | Electrically programmable memory element |
US20020038883A1 (en) * | 2000-09-29 | 2002-04-04 | Lowrey Tyler A. | Compositionally modified resistive electrode |
US20030003634A1 (en) * | 2001-06-30 | 2003-01-02 | Lowrey Tyler A. | Utilizing atomic layer deposition for programmable device |
-
2002
- 2002-08-21 AU AU2002326709A patent/AU2002326709A1/en not_active Abandoned
- 2002-08-21 EP EP02761442A patent/EP1559146A1/en not_active Withdrawn
- 2002-08-21 GB GB0501967A patent/GB2407705A/en not_active Withdrawn
- 2002-08-21 JP JP2004541413A patent/JP2005536071A/en active Pending
- 2002-08-21 DE DE10297784T patent/DE10297784T5/en not_active Withdrawn
- 2002-08-21 WO PCT/US2002/026552 patent/WO2004032256A1/en not_active Application Discontinuation
- 2002-08-21 CN CN02829486.6A patent/CN1650443A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4268908A (en) * | 1979-02-26 | 1981-05-19 | International Business Machines Corporation | Modular macroprocessing system comprising a microprocessor and an extendable number of programmed logic arrays |
WO2001029893A1 (en) * | 1999-10-15 | 2001-04-26 | Asm America, Inc. | Method for depositing nanolaminate thin films on sensitive surfaces |
US6203613B1 (en) * | 1999-10-19 | 2001-03-20 | International Business Machines Corporation | Atomic layer deposition with nitrate containing precursors |
WO2002009206A1 (en) * | 2000-07-22 | 2002-01-31 | Ovonyx, Inc. | Electrically programmable memory element |
US20020038883A1 (en) * | 2000-09-29 | 2002-04-04 | Lowrey Tyler A. | Compositionally modified resistive electrode |
US20030003634A1 (en) * | 2001-06-30 | 2003-01-02 | Lowrey Tyler A. | Utilizing atomic layer deposition for programmable device |
Non-Patent Citations (3)
Title |
---|
MCKENZIE J M: "Microcomputer fundamentals" WESTERN ELECTRIC ENGINEER, vol. 21, no. 3, July 1977 (1977-07), pages 3-13 * |
MIN J-S ET AL: "Atomic layer deposition of TiN thin films by sequential introduction of Ti precursor and NH3" ADVANCED INTERCONNECTS AND CONTACT MATERIALS AND PROCESSES FOR FUTURE INTEGRATED CIRCUITS. SYMPOSIUM, SAN FRANCISCO, 13-16 April 1998 pages 337-342 * |
ZINGG R J ET AL: "A terminal multiplexor application of Ovonic memories" IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-20, no. 2, February 1973 (1973-02), pages 188-194 * |
Also Published As
Publication number | Publication date |
---|---|
JP2005536071A (en) | 2005-11-24 |
EP1559146A1 (en) | 2005-08-03 |
WO2004032256A1 (en) | 2004-04-15 |
DE10297784T5 (en) | 2005-07-14 |
GB0501967D0 (en) | 2005-03-09 |
CN1650443A (en) | 2005-08-03 |
AU2002326709A1 (en) | 2004-04-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |