GB2407705A - Utilizing atomic layer deposition for programmable device - Google Patents

Utilizing atomic layer deposition for programmable device Download PDF

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Publication number
GB2407705A
GB2407705A GB0501967A GB0501967A GB2407705A GB 2407705 A GB2407705 A GB 2407705A GB 0501967 A GB0501967 A GB 0501967A GB 0501967 A GB0501967 A GB 0501967A GB 2407705 A GB2407705 A GB 2407705A
Authority
GB
United Kingdom
Prior art keywords
atomic layer
layer deposition
programmable device
utilizing atomic
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0501967A
Other versions
GB0501967D0 (en
Inventor
Tyler A Lowrey
Charles H Dennison
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ovonyx Inc
Original Assignee
Ovonyx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ovonyx Inc filed Critical Ovonyx Inc
Publication of GB0501967D0 publication Critical patent/GB0501967D0/en
Publication of GB2407705A publication Critical patent/GB2407705A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening (220) is formed through a dielectric (210) exposing a contact (170), the contact (170) formed on a substrate (100). An electrode (230) is conformally deposited on a wall of the dielectric (210), utilizing atomic layer deposition (ALD). A programmable material (404) is formed on the electrode (230) and a conductor (410) is formed to the programmable material (404). In an aspect, a barrier (408) is conformally deposited utilizing ALD, between the electrode (230) and the programmable material (404).

Description

GB 2407705 A continuation
(58) Field of Search by ISA:
INT CL7 GOOF, H01L Other: EPO - Internal, WPI Data, PAJ, INSPEC,
COMPENDEX
GB0501967A 2002-08-21 2002-08-21 Utilizing atomic layer deposition for programmable device Withdrawn GB2407705A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/026552 WO2004032256A1 (en) 2002-08-21 2002-08-21 Utilizing atomic layer deposition for programmable device

Publications (2)

Publication Number Publication Date
GB0501967D0 GB0501967D0 (en) 2005-03-09
GB2407705A true GB2407705A (en) 2005-05-04

Family

ID=32067651

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0501967A Withdrawn GB2407705A (en) 2002-08-21 2002-08-21 Utilizing atomic layer deposition for programmable device

Country Status (7)

Country Link
EP (1) EP1559146A1 (en)
JP (1) JP2005536071A (en)
CN (1) CN1650443A (en)
AU (1) AU2002326709A1 (en)
DE (1) DE10297784T5 (en)
GB (1) GB2407705A (en)
WO (1) WO2004032256A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003282323A1 (en) * 2002-12-19 2004-07-14 Koninklijke Philips Electronics N.V. Electric device comprising phase change material
US7348590B2 (en) * 2005-02-10 2008-03-25 Infineon Technologies Ag Phase change memory cell with high read margin at low power operation
KR100663358B1 (en) * 2005-02-24 2007-01-02 삼성전자주식회사 Phase change memory devices employing cell diodes and methods of fabricating the same
JP4817410B2 (en) * 2005-09-12 2011-11-16 エルピーダメモリ株式会社 Phase change memory device and manufacturing method thereof
JP4628935B2 (en) * 2005-11-19 2011-02-09 エルピーダメモリ株式会社 Nonvolatile semiconductor memory device
JP4860248B2 (en) * 2005-11-26 2012-01-25 エルピーダメモリ株式会社 Phase change memory device and method of manufacturing phase change memory device
JP4939324B2 (en) * 2005-12-02 2012-05-23 シャープ株式会社 Variable resistance element and manufacturing method thereof
JP4691454B2 (en) * 2006-02-25 2011-06-01 エルピーダメモリ株式会社 Phase change memory device and manufacturing method thereof
US7750333B2 (en) 2006-06-28 2010-07-06 Intel Corporation Bit-erasing architecture for seek-scan probe (SSP) memory storage
KR100911473B1 (en) * 2007-06-18 2009-08-11 삼성전자주식회사 Phase-change memory unit, method of forming the phase-change memory unit, phase-change memory device having the phase-change memory unit and method of manufacturing the phase-change memory device
US8956939B2 (en) * 2013-04-29 2015-02-17 Asm Ip Holding B.V. Method of making a resistive random access memory device
US9362475B2 (en) 2014-03-24 2016-06-07 GM Global Technology Operations LLC Thermoelectric material including conformal oxide layers and method of making the same using atomic layer deposition
US9741930B2 (en) 2015-03-27 2017-08-22 Intel Corporation Materials and components in phase change memory devices

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268908A (en) * 1979-02-26 1981-05-19 International Business Machines Corporation Modular macroprocessing system comprising a microprocessor and an extendable number of programmed logic arrays
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
WO2001029893A1 (en) * 1999-10-15 2001-04-26 Asm America, Inc. Method for depositing nanolaminate thin films on sensitive surfaces
WO2002009206A1 (en) * 2000-07-22 2002-01-31 Ovonyx, Inc. Electrically programmable memory element
US20020038883A1 (en) * 2000-09-29 2002-04-04 Lowrey Tyler A. Compositionally modified resistive electrode
US20030003634A1 (en) * 2001-06-30 2003-01-02 Lowrey Tyler A. Utilizing atomic layer deposition for programmable device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268908A (en) * 1979-02-26 1981-05-19 International Business Machines Corporation Modular macroprocessing system comprising a microprocessor and an extendable number of programmed logic arrays
WO2001029893A1 (en) * 1999-10-15 2001-04-26 Asm America, Inc. Method for depositing nanolaminate thin films on sensitive surfaces
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
WO2002009206A1 (en) * 2000-07-22 2002-01-31 Ovonyx, Inc. Electrically programmable memory element
US20020038883A1 (en) * 2000-09-29 2002-04-04 Lowrey Tyler A. Compositionally modified resistive electrode
US20030003634A1 (en) * 2001-06-30 2003-01-02 Lowrey Tyler A. Utilizing atomic layer deposition for programmable device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
MCKENZIE J M: "Microcomputer fundamentals" WESTERN ELECTRIC ENGINEER, vol. 21, no. 3, July 1977 (1977-07), pages 3-13 *
MIN J-S ET AL: "Atomic layer deposition of TiN thin films by sequential introduction of Ti precursor and NH3" ADVANCED INTERCONNECTS AND CONTACT MATERIALS AND PROCESSES FOR FUTURE INTEGRATED CIRCUITS. SYMPOSIUM, SAN FRANCISCO, 13-16 April 1998 pages 337-342 *
ZINGG R J ET AL: "A terminal multiplexor application of Ovonic memories" IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-20, no. 2, February 1973 (1973-02), pages 188-194 *

Also Published As

Publication number Publication date
JP2005536071A (en) 2005-11-24
EP1559146A1 (en) 2005-08-03
WO2004032256A1 (en) 2004-04-15
DE10297784T5 (en) 2005-07-14
GB0501967D0 (en) 2005-03-09
CN1650443A (en) 2005-08-03
AU2002326709A1 (en) 2004-04-23

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Legal Events

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WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)