TW258836B - Process of field emission device with gate - Google Patents

Abstract

A process of field emission device with gate includes: (1) forming one emission device on substrate; (2) forming thin dielectric layer with even thickness on the above emission device and substrate; (3) forming one thick dielectric layer on the above thin dielectric layer; (4) planarizing the above thick dielectric layer; (5) etching-back the above thick dielectric to make the above thin dielectric layer surface expose portion; (6) etching the above thin dielectric layer to make the thin dielectric layer disconnect with the above thick dielectric layer around the above emission device tip; (7) forming conductive layer on the above thick dielectric layer and thin dielectric layer of the above emission device tip, in which the conductive layer of those two parts disconnect and the thickness of conductive layer on the above thin dielectric layer thicker than the one of the above thick dielectric layer; (8) exposing emission device tip, simultaneously forming field emission device with gate.