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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW84105775ApriorityCriticalpatent/TW263612B/en
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Publication of TW263612BpublicationCriticalpatent/TW263612B/en
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Abstract
A process for buried contact formed with metal silicide comprises: a. supplying one semiconductor substrate; b. forming isolating structure on the substrate, and defining active region in the isolating structures; c. forming one dielectric layer covering the active region; d. forming one conductive layer covering the dielectric layer and the isolating structure; e. etching the conductive layer and the dielectric layer, forming one opening to expose partial substrate; f. forming one metal silicide on the conductive layer, and contacting with the exposed substrate via the opening; g. etching the metal silicide and the conductive layer to gate electrode and interconnection.
TW84105775A1995-06-071995-06-07Process for buried contact
TW263612B
(en)