TW355842B - Manufacturing method for crown-shaped capacitance structure - Google Patents

Manufacturing method for crown-shaped capacitance structure

Info

Publication number
TW355842B
TW355842B TW087100093A TW87100093A TW355842B TW 355842 B TW355842 B TW 355842B TW 087100093 A TW087100093 A TW 087100093A TW 87100093 A TW87100093 A TW 87100093A TW 355842 B TW355842 B TW 355842B
Authority
TW
Taiwan
Prior art keywords
polysilicon
layer
forming
crown
isolation
Prior art date
Application number
TW087100093A
Other languages
Chinese (zh)
Inventor
Jian-Mai Song
Original Assignee
Vanguard Int Semiconduct Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vanguard Int Semiconduct Corp filed Critical Vanguard Int Semiconduct Corp
Priority to TW087100093A priority Critical patent/TW355842B/en
Priority to JP10120655A priority patent/JP2944990B2/en
Application granted granted Critical
Publication of TW355842B publication Critical patent/TW355842B/en

Links

Abstract

A method for forming stack capacitance with crown-shaped storage node structure on the substrate, comprising: (1) providing a transmission gate transistor; (2) deposit a first isolation layer on the said gate transistor; (3) forming contact for the storage node on the said first isolation layer, to expose the source and collector of the said transistor; (4) depositing a first polysilicon on the said first isolation layer; (5) form an isolation block on the said first polysilicon; (6) form polysilicon spacer on the second polysilicon layer; (7) remove the uncovered layer of the first polysilicon layer; (8) remove the said isolation block; (9) remove the bottom part of the first polysilicon layer; (10) forming a capacitance dielectric; (11) forming polysilicon upper electrode on the capacitance dielectric.
TW087100093A 1998-01-05 1998-01-05 Manufacturing method for crown-shaped capacitance structure TW355842B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW087100093A TW355842B (en) 1998-01-05 1998-01-05 Manufacturing method for crown-shaped capacitance structure
JP10120655A JP2944990B2 (en) 1998-01-05 1998-04-30 Manufacturing method of crown type capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW087100093A TW355842B (en) 1998-01-05 1998-01-05 Manufacturing method for crown-shaped capacitance structure

Publications (1)

Publication Number Publication Date
TW355842B true TW355842B (en) 1999-04-11

Family

ID=21629295

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087100093A TW355842B (en) 1998-01-05 1998-01-05 Manufacturing method for crown-shaped capacitance structure

Country Status (2)

Country Link
JP (1) JP2944990B2 (en)
TW (1) TW355842B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100382553B1 (en) * 2000-12-30 2003-05-09 주식회사 하이닉스반도체 Method for forming capacitor of semiconductor device
KR100734255B1 (en) * 2001-05-18 2007-07-02 삼성전자주식회사 Capacitor for semiconductor memory device and method for manufacturing the same

Also Published As

Publication number Publication date
JP2944990B2 (en) 1999-09-06
JPH11204760A (en) 1999-07-30

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