KR960011649B1 - Capacitor manufacture - Google Patents
Capacitor manufacture Download PDFInfo
- Publication number
- KR960011649B1 KR960011649B1 KR92021021A KR920021021A KR960011649B1 KR 960011649 B1 KR960011649 B1 KR 960011649B1 KR 92021021 A KR92021021 A KR 92021021A KR 920021021 A KR920021021 A KR 920021021A KR 960011649 B1 KR960011649 B1 KR 960011649B1
- Authority
- KR
- South Korea
- Prior art keywords
- insulating layer
- forming
- polysilicone
- forth
- depositing
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229920002282 polysilicones-15 Polymers 0.000 abstract 4
- 238000000151 deposition Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 238000000059 patterning Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The method of manufacturing capacitor comprises the steps of : forming a memory cell transistor, a first insulating layer(12), a second insulating layer(13) and a third insulating layer(14) on a semiconductor substrate(11); forming a buried contact hole by etching the first, the second and the third insulating layer selectively and depositing a doped polysilicone(15); depositing a forth insulating layer(16) on the polysilicone(15) and patterning the forth insulating layer to form a ridge(16); forming a side wall with a fifth insulating layer(17) on the side of the forth insulating layer(16); etching the polysilicone(15) to form a step part; removing the forth insulating layer(16) and forming a side wall with a sixth insulating layer(18); removing the fifth insulating layer(17) and the polysilicone(15); and forming a dielectric film and a plate after removing the sixth insulating layer(18).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR92021021A KR960011649B1 (en) | 1992-11-10 | 1992-11-10 | Capacitor manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR92021021A KR960011649B1 (en) | 1992-11-10 | 1992-11-10 | Capacitor manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940012625A KR940012625A (en) | 1994-06-24 |
KR960011649B1 true KR960011649B1 (en) | 1996-08-24 |
Family
ID=19342813
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR92021021A KR960011649B1 (en) | 1992-11-10 | 1992-11-10 | Capacitor manufacture |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960011649B1 (en) |
-
1992
- 1992-11-10 KR KR92021021A patent/KR960011649B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR940012625A (en) | 1994-06-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20100726 Year of fee payment: 15 |
|
LAPS | Lapse due to unpaid annual fee |