GB2396868A - Copper-indium based thin film photovoltaic devices and methods of making the same - Google Patents
Copper-indium based thin film photovoltaic devices and methods of making the same Download PDFInfo
- Publication number
- GB2396868A GB2396868A GB0408376A GB0408376A GB2396868A GB 2396868 A GB2396868 A GB 2396868A GB 0408376 A GB0408376 A GB 0408376A GB 0408376 A GB0408376 A GB 0408376A GB 2396868 A GB2396868 A GB 2396868A
- Authority
- GB
- United Kingdom
- Prior art keywords
- copper
- window layer
- indium based
- layer
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 title abstract 5
- 239000010409 thin film Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000006096 absorbing agent Substances 0.000 abstract 6
- 239000004065 semiconductor Substances 0.000 abstract 4
- 238000000151 deposition Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000004070 electrodeposition Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
A method of fabricating a copper-indium based thin film photovoltaic device comprises the steps of: (a) using electrodeposition, depositing a front window layer of a semiconductor material on a suitably configured electrically conductive substrate; (b) doping the window layer to obtain optimum electrical conductivity in the window layer; and following steps (a) and (b), (c) successively electrochemically depositing a plurality of adjacent copper-indium based semiconductor absorber layers on the window layer wherein each absorber layer has a different band gap energy value to an adjacent absorber layer. Thus a copper-indium based thin film photovoltaic device made according to this method comprises; an electrically conductive front substrate upon which is comprised an electrodeposited window layer of a doped semiconductor material; and having been successively deposited on top of said deposited window layer, a plurality of electrochemically deposited adjacent copper-indium based semiconductor absorber layers, wherein each absorber layer has a different band gap energy value to an adjacent absorber layer.
Description
GB 2396868 A continuation (74) Agent and/or Address for Service: Franks &
Co 9 President Buildings, Savile Street East,
SHEFFIELD, S4 FUG, United Kingdom
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0127113A GB0127113D0 (en) | 2001-11-10 | 2001-11-10 | Copper indium based thin film photovoltaic devices and methods of making the same |
PCT/GB2002/005058 WO2003043096A2 (en) | 2001-11-10 | 2002-11-07 | Copper-indium based thin film photovoltaic devices and methods of making the same |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0408376D0 GB0408376D0 (en) | 2004-05-19 |
GB2396868A true GB2396868A (en) | 2004-07-07 |
GB2396868B GB2396868B (en) | 2005-06-15 |
Family
ID=9925606
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0127113A Ceased GB0127113D0 (en) | 2001-11-10 | 2001-11-10 | Copper indium based thin film photovoltaic devices and methods of making the same |
GB0408376A Expired - Fee Related GB2396868B (en) | 2001-11-10 | 2002-11-07 | Copper-indium based thin film photovoltaic devices and methods of making the same |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0127113A Ceased GB0127113D0 (en) | 2001-11-10 | 2001-11-10 | Copper indium based thin film photovoltaic devices and methods of making the same |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2002339116A1 (en) |
GB (2) | GB0127113D0 (en) |
WO (1) | WO2003043096A2 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1619728A4 (en) * | 2003-04-09 | 2006-08-09 | Matsushita Electric Ind Co Ltd | Solar cell |
GB2400725B (en) * | 2003-04-17 | 2005-11-16 | Univ Sheffield Hallam | Electrodeposited semiconductors |
US8124870B2 (en) | 2006-09-19 | 2012-02-28 | Itn Energy System, Inc. | Systems and processes for bifacial collection and tandem junctions using a thin-film photovoltaic device |
WO2010088446A2 (en) * | 2009-02-02 | 2010-08-05 | Dow Global Technologies Inc. | Robust photovoltaic cell |
JP5808562B2 (en) * | 2011-04-04 | 2015-11-10 | Tdk株式会社 | Solar cell and method for manufacturing solar cell |
US20130000702A1 (en) * | 2011-06-30 | 2013-01-03 | Miasole | Photovoltaic device with resistive cigs layer at the back contact |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4335266A (en) * | 1980-12-31 | 1982-06-15 | The Boeing Company | Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2 |
DE3206347A1 (en) * | 1982-02-22 | 1983-09-01 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Process for producing CdS layers for solar cells |
US4581108A (en) * | 1984-01-06 | 1986-04-08 | Atlantic Richfield Company | Process of forming a compound semiconductive material |
US4909863A (en) * | 1988-07-13 | 1990-03-20 | University Of Delaware | Process for levelling film surfaces and products thereof |
WO1998048079A1 (en) * | 1997-04-21 | 1998-10-29 | Davis, Joseph & Negley | Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells |
US6259016B1 (en) * | 1999-03-05 | 2001-07-10 | Matsushita Electric Industrial Co., Ltd. | Solar cell |
-
2001
- 2001-11-10 GB GB0127113A patent/GB0127113D0/en not_active Ceased
-
2002
- 2002-11-07 AU AU2002339116A patent/AU2002339116A1/en not_active Abandoned
- 2002-11-07 WO PCT/GB2002/005058 patent/WO2003043096A2/en not_active Application Discontinuation
- 2002-11-07 GB GB0408376A patent/GB2396868B/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4335266A (en) * | 1980-12-31 | 1982-06-15 | The Boeing Company | Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2 |
DE3206347A1 (en) * | 1982-02-22 | 1983-09-01 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Process for producing CdS layers for solar cells |
US4581108A (en) * | 1984-01-06 | 1986-04-08 | Atlantic Richfield Company | Process of forming a compound semiconductive material |
US4909863A (en) * | 1988-07-13 | 1990-03-20 | University Of Delaware | Process for levelling film surfaces and products thereof |
WO1998048079A1 (en) * | 1997-04-21 | 1998-10-29 | Davis, Joseph & Negley | Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells |
US6259016B1 (en) * | 1999-03-05 | 2001-07-10 | Matsushita Electric Industrial Co., Ltd. | Solar cell |
Non-Patent Citations (1)
Title |
---|
R P Raffaelle et al, Solar Energy materials and Solar Cells, vol 46, 1997, pages 11-29 * |
Also Published As
Publication number | Publication date |
---|---|
WO2003043096A3 (en) | 2003-11-20 |
GB0408376D0 (en) | 2004-05-19 |
GB2396868B (en) | 2005-06-15 |
AU2002339116A1 (en) | 2003-05-26 |
WO2003043096A2 (en) | 2003-05-22 |
GB0127113D0 (en) | 2002-01-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20121107 |