WO2003043096A3 - Copper-indium based thin film photovoltaic devices and methods of making the same - Google Patents

Copper-indium based thin film photovoltaic devices and methods of making the same Download PDF

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Publication number
WO2003043096A3
WO2003043096A3 PCT/GB2002/005058 GB0205058W WO03043096A3 WO 2003043096 A3 WO2003043096 A3 WO 2003043096A3 GB 0205058 W GB0205058 W GB 0205058W WO 03043096 A3 WO03043096 A3 WO 03043096A3
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WO
WIPO (PCT)
Prior art keywords
copper
window layer
indium based
layer
thin film
Prior art date
Application number
PCT/GB2002/005058
Other languages
French (fr)
Other versions
WO2003043096A2 (en
Inventor
Banda Imyhamy Mudiy Dharmadasa
Thomas Delsol
Anura Priyajith Samantilleke
John Young
Original Assignee
Univ Sheffield Hallam
Banda Imyhamy Mudiy Dharmadasa
Thomas Delsol
Anura Priyajith Samantilleke
John Young
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Sheffield Hallam, Banda Imyhamy Mudiy Dharmadasa, Thomas Delsol, Anura Priyajith Samantilleke, John Young filed Critical Univ Sheffield Hallam
Priority to AU2002339116A priority Critical patent/AU2002339116A1/en
Priority to GB0408376A priority patent/GB2396868B/en
Publication of WO2003043096A2 publication Critical patent/WO2003043096A2/en
Publication of WO2003043096A3 publication Critical patent/WO2003043096A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A method of fabricating a copper-indium based thin film photovoltaic device comprises the steps of: (a) using electrodeposition, depositing a front window layer of a semiconductor material on a suitably configured electrically conductive substrate; (b) doping the window layer to obtain optimum electrical conductivity in the window layer; and following steps (a) and (b), (c) successively electrochemically depositing a plurality of adjacent copper-indium based semiconductor absorber layers on the window layer wherein each absorber layer has a different band gap energy value to an adjacent absorber layer. Thus a copper-indium based thin film photovoltaic device made according to this method comprises; an electrically conductive front substrate upon which is comprised an electrodeposited window layer of a doped semiconductor material; and having been successively deposited on top of said deposited window layer, a plurality of electrochemically deposited adjacent copper-indium based semiconductor absorber layers, wherein each absorber layer has a different band gap energy value to an adjacent absorber layer.
PCT/GB2002/005058 2001-11-10 2002-11-07 Copper-indium based thin film photovoltaic devices and methods of making the same WO2003043096A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2002339116A AU2002339116A1 (en) 2001-11-10 2002-11-07 Copper-indium based thin film photovoltaic devices and methods of making the same
GB0408376A GB2396868B (en) 2001-11-10 2002-11-07 Copper-indium based thin film photovoltaic devices and methods of making the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0127113A GB0127113D0 (en) 2001-11-10 2001-11-10 Copper indium based thin film photovoltaic devices and methods of making the same
GB0127113.9 2001-11-10

Publications (2)

Publication Number Publication Date
WO2003043096A2 WO2003043096A2 (en) 2003-05-22
WO2003043096A3 true WO2003043096A3 (en) 2003-11-20

Family

ID=9925606

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2002/005058 WO2003043096A2 (en) 2001-11-10 2002-11-07 Copper-indium based thin film photovoltaic devices and methods of making the same

Country Status (3)

Country Link
AU (1) AU2002339116A1 (en)
GB (2) GB0127113D0 (en)
WO (1) WO2003043096A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004090995A1 (en) * 2003-04-09 2004-10-21 Matsushita Electric Industrial Co., Ltd. Solar cell
GB2400725B (en) * 2003-04-17 2005-11-16 Univ Sheffield Hallam Electrodeposited semiconductors
US8124870B2 (en) 2006-09-19 2012-02-28 Itn Energy System, Inc. Systems and processes for bifacial collection and tandem junctions using a thin-film photovoltaic device
WO2010088446A2 (en) * 2009-02-02 2010-08-05 Dow Global Technologies Inc. Robust photovoltaic cell
JP5808562B2 (en) * 2011-04-04 2015-11-10 Tdk株式会社 Solar cell and method for manufacturing solar cell
US20130000702A1 (en) * 2011-06-30 2013-01-03 Miasole Photovoltaic device with resistive cigs layer at the back contact

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4335266A (en) * 1980-12-31 1982-06-15 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
DE3206347A1 (en) * 1982-02-22 1983-09-01 Standard Elektrik Lorenz Ag, 7000 Stuttgart Process for producing CdS layers for solar cells
US4581108A (en) * 1984-01-06 1986-04-08 Atlantic Richfield Company Process of forming a compound semiconductive material
US4909863A (en) * 1988-07-13 1990-03-20 University Of Delaware Process for levelling film surfaces and products thereof
WO1998048079A1 (en) * 1997-04-21 1998-10-29 Davis, Joseph & Negley Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells
US6259016B1 (en) * 1999-03-05 2001-07-10 Matsushita Electric Industrial Co., Ltd. Solar cell

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4335266A (en) * 1980-12-31 1982-06-15 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
DE3206347A1 (en) * 1982-02-22 1983-09-01 Standard Elektrik Lorenz Ag, 7000 Stuttgart Process for producing CdS layers for solar cells
US4581108A (en) * 1984-01-06 1986-04-08 Atlantic Richfield Company Process of forming a compound semiconductive material
US4909863A (en) * 1988-07-13 1990-03-20 University Of Delaware Process for levelling film surfaces and products thereof
WO1998048079A1 (en) * 1997-04-21 1998-10-29 Davis, Joseph & Negley Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells
US6259016B1 (en) * 1999-03-05 2001-07-10 Matsushita Electric Industrial Co., Ltd. Solar cell

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
RAFFAELLE R P ET AL: "Scanning tunneling microscopy of electrodeposited CuInSe2 nanoscale multilayers", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 46, no. 3, 1 June 1997 (1997-06-01), pages 201 - 208, XP004084200, ISSN: 0927-0248 *

Also Published As

Publication number Publication date
GB0127113D0 (en) 2002-01-02
GB0408376D0 (en) 2004-05-19
WO2003043096A2 (en) 2003-05-22
GB2396868A (en) 2004-07-07
GB2396868B (en) 2005-06-15
AU2002339116A1 (en) 2003-05-26

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