GB2400725B - Electrodeposited semiconductors - Google Patents

Electrodeposited semiconductors

Info

Publication number
GB2400725B
GB2400725B GB0308826A GB0308826A GB2400725B GB 2400725 B GB2400725 B GB 2400725B GB 0308826 A GB0308826 A GB 0308826A GB 0308826 A GB0308826 A GB 0308826A GB 2400725 B GB2400725 B GB 2400725B
Authority
GB
United Kingdom
Prior art keywords
electrodeposited
semiconductors
electrodeposited semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0308826A
Other versions
GB2400725A (en
GB0308826D0 (en
Inventor
Imyhamy Mudiyansela Dharmadasa
N B Chaure
John Young
Anura Priyajith Samantilleke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sheffield Hallam University
Original Assignee
Sheffield Hallam University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sheffield Hallam University filed Critical Sheffield Hallam University
Priority to GB0308826A priority Critical patent/GB2400725B/en
Publication of GB0308826D0 publication Critical patent/GB0308826D0/en
Publication of GB2400725A publication Critical patent/GB2400725A/en
Application granted granted Critical
Publication of GB2400725B publication Critical patent/GB2400725B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
GB0308826A 2003-04-17 2003-04-17 Electrodeposited semiconductors Expired - Fee Related GB2400725B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0308826A GB2400725B (en) 2003-04-17 2003-04-17 Electrodeposited semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0308826A GB2400725B (en) 2003-04-17 2003-04-17 Electrodeposited semiconductors

Publications (3)

Publication Number Publication Date
GB0308826D0 GB0308826D0 (en) 2003-05-21
GB2400725A GB2400725A (en) 2004-10-20
GB2400725B true GB2400725B (en) 2005-11-16

Family

ID=9956911

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0308826A Expired - Fee Related GB2400725B (en) 2003-04-17 2003-04-17 Electrodeposited semiconductors

Country Status (1)

Country Link
GB (1) GB2400725B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080216885A1 (en) 2007-03-06 2008-09-11 Sergey Frolov Spectrally adaptive multijunction photovoltaic thin film device and method of producing same
CN100452446C (en) * 2007-05-29 2009-01-14 中南大学 A method for pulse electrodeposit CIGS semiconductor film material
US20090215215A1 (en) 2008-02-21 2009-08-27 Sunlight Photonics Inc. Method and apparatus for manufacturing multi-layered electro-optic devices
US10211353B2 (en) 2008-04-14 2019-02-19 Sunlight Photonics Inc. Aligned bifacial solar modules
US8110428B2 (en) * 2008-11-25 2012-02-07 Sunlight Photonics Inc. Thin-film photovoltaic devices
US20110108115A1 (en) * 2009-11-11 2011-05-12 International Business Machines Corporation Forming a Photovoltaic Device
FR2955428B1 (en) * 2010-01-15 2013-09-13 Nexcis FABRICATION OF A MULTILAYER STRUCTURE FOR PHOTOVOLTAIC APPLICATIONS FROM IMPROVED ELECTROLYSIS CONDITIONS.
CN101937943A (en) * 2010-08-30 2011-01-05 浙江尚越光电科技有限公司 Preparation method of thin-film solar cell absorption layer with gradient gallium-indium atomic ratio distribution
KR20140120011A (en) * 2013-04-01 2014-10-13 삼성에스디아이 주식회사 Solar cell and manufacturing method thereof
CN108470783B (en) * 2018-03-28 2020-12-01 京东方科技集团股份有限公司 Photosensitive element and manufacturing method thereof, display panel and manufacturing method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2006268A (en) * 1977-10-14 1979-05-02 Univ Queensland Preparation of semiconductor films on electrically conductive substrates
US4425194A (en) * 1976-06-08 1984-01-10 Monosolar, Inc. Photo-voltaic power generating means and methods
WO2003043096A2 (en) * 2001-11-10 2003-05-22 Sheffield Hallam University Copper-indium based thin film photovoltaic devices and methods of making the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4425194A (en) * 1976-06-08 1984-01-10 Monosolar, Inc. Photo-voltaic power generating means and methods
GB2006268A (en) * 1977-10-14 1979-05-02 Univ Queensland Preparation of semiconductor films on electrically conductive substrates
WO2003043096A2 (en) * 2001-11-10 2003-05-22 Sheffield Hallam University Copper-indium based thin film photovoltaic devices and methods of making the same

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
INSPEC Abstract No 2388871 & Electrodeposition of CdTe thin films, J. Electrochem. Soc. Vol 131, No 9, pp 2032-2037, Battacharya & Rajeshwar. *
INSPEC Abstract No 3687659 & Crystal growth and photoelectrochemical characterization of Cd4BSe6 (B=Si or Ge), Berichte der Bunsengesellschaft fur Physikalische Chemie, Vol 94, No 1, pp 8-12, Jan 1990, Manivannan et al. *
INSPEC Abstract No 6122849 & Comparison of CdS thin films prepared by different techniques for applications in solar cells as window materials, J. Mat. Sci., Vol 9, No 3, pp 267-372, Oct 1998, Ileperuma et al. *

Also Published As

Publication number Publication date
GB2400725A (en) 2004-10-20
GB0308826D0 (en) 2003-05-21

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20130417