FR2955428B1 - FABRICATION OF A MULTILAYER STRUCTURE FOR PHOTOVOLTAIC APPLICATIONS FROM IMPROVED ELECTROLYSIS CONDITIONS. - Google Patents
FABRICATION OF A MULTILAYER STRUCTURE FOR PHOTOVOLTAIC APPLICATIONS FROM IMPROVED ELECTROLYSIS CONDITIONS.Info
- Publication number
- FR2955428B1 FR2955428B1 FR1050255A FR1050255A FR2955428B1 FR 2955428 B1 FR2955428 B1 FR 2955428B1 FR 1050255 A FR1050255 A FR 1050255A FR 1050255 A FR1050255 A FR 1050255A FR 2955428 B1 FR2955428 B1 FR 2955428B1
- Authority
- FR
- France
- Prior art keywords
- fabrication
- multilayer structure
- electrolysis conditions
- photovoltaic applications
- improved electrolysis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005868 electrolysis reaction Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1050255A FR2955428B1 (en) | 2010-01-15 | 2010-01-15 | FABRICATION OF A MULTILAYER STRUCTURE FOR PHOTOVOLTAIC APPLICATIONS FROM IMPROVED ELECTROLYSIS CONDITIONS. |
PCT/FR2011/050059 WO2011086327A1 (en) | 2010-01-15 | 2011-01-12 | Production of a multi-layer structure for photovoltaic uses with perfected electrolysis conditions |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1050255A FR2955428B1 (en) | 2010-01-15 | 2010-01-15 | FABRICATION OF A MULTILAYER STRUCTURE FOR PHOTOVOLTAIC APPLICATIONS FROM IMPROVED ELECTROLYSIS CONDITIONS. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2955428A1 FR2955428A1 (en) | 2011-07-22 |
FR2955428B1 true FR2955428B1 (en) | 2013-09-13 |
Family
ID=42752269
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1050255A Active FR2955428B1 (en) | 2010-01-15 | 2010-01-15 | FABRICATION OF A MULTILAYER STRUCTURE FOR PHOTOVOLTAIC APPLICATIONS FROM IMPROVED ELECTROLYSIS CONDITIONS. |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR2955428B1 (en) |
WO (1) | WO2011086327A1 (en) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2056609A1 (en) * | 1991-11-28 | 1993-05-29 | Ishiang Shih | Methods for fabrication of cuinse2 thin films and solar cells |
GB2400725B (en) * | 2003-04-17 | 2005-11-16 | Univ Sheffield Hallam | Electrodeposited semiconductors |
WO2005089330A2 (en) * | 2004-03-15 | 2005-09-29 | Solopower, Inc. | Technique and apparatus for depositing thin layers of semiconductors for solar cell fabricaton |
-
2010
- 2010-01-15 FR FR1050255A patent/FR2955428B1/en active Active
-
2011
- 2011-01-12 WO PCT/FR2011/050059 patent/WO2011086327A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2011086327A1 (en) | 2011-07-21 |
FR2955428A1 (en) | 2011-07-22 |
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