JPS5666065A - Semiconductor memory unit - Google Patents
Semiconductor memory unitInfo
- Publication number
- JPS5666065A JPS5666065A JP14255279A JP14255279A JPS5666065A JP S5666065 A JPS5666065 A JP S5666065A JP 14255279 A JP14255279 A JP 14255279A JP 14255279 A JP14255279 A JP 14255279A JP S5666065 A JPS5666065 A JP S5666065A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio2
- substrate
- si3n4
- mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- 239000003990 capacitor Substances 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To eliminate the erroneous operation of memory to be caused by alpha particles from the outside when an MOSFET and an MOS diode type capacitor are to be formed being integrated in one body on a semiconductor substrate by a method wherein an insulating layer part to install the diode type capacitor is consisted of compound insulating layer of SiO2 and Si3N4. CONSTITUTION:A thick field oxide film 2 is formed at the circumferential part of the Si substrate 1, while the SiO2 film 9 and the Si3N4 film 8 are adhered in lamination on the active region of the substrate 1 and the whole surface is covered with an SiO2 film 10. The first polycrystalline Si film 4 is formed on the surface extending from the one side film 2 to the center part of the film 10, and is covered with a thick SiO2 film 5. Then etching is performed using the film 5 as a mask, and the exposing film 10 and then the films 8, 9 are removed in order. The second polycrystalline Si film 6 is adhered on the surface extending from the end part of the film 5 being reduced in the thickness but yet remaining to the center part of the exposing substrate 1. By this constitution, the film 5 is interposed between the film 6 to be used as the MOSFET and the film 4 to be used as the capacitor, and the SiO2 film and the Si3N4 film are located under the film 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14255279A JPS5666065A (en) | 1979-11-01 | 1979-11-01 | Semiconductor memory unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14255279A JPS5666065A (en) | 1979-11-01 | 1979-11-01 | Semiconductor memory unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5666065A true JPS5666065A (en) | 1981-06-04 |
Family
ID=15317993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14255279A Pending JPS5666065A (en) | 1979-11-01 | 1979-11-01 | Semiconductor memory unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5666065A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58137245A (en) * | 1982-02-10 | 1983-08-15 | Hitachi Ltd | Semiconductor memory and its manufacture |
| JPS58154256A (en) * | 1982-03-10 | 1983-09-13 | Hitachi Ltd | Semiconductor memory and preparation thereof |
| JPS5954097A (en) * | 1982-09-22 | 1984-03-28 | Hitachi Ltd | Semiconductor memory device |
| JPS6045054A (en) * | 1983-08-22 | 1985-03-11 | Nec Corp | Manufacture of mis type semiconductor memory device |
| JPH02354A (en) * | 1989-02-08 | 1990-01-05 | Hitachi Ltd | Large scale semiconductor memory and its manufacture |
| US5017982A (en) * | 1988-11-15 | 1991-05-21 | Mitsubishi Denki Kabushiki Kaisha | Capacitor in semiconductor device |
-
1979
- 1979-11-01 JP JP14255279A patent/JPS5666065A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58137245A (en) * | 1982-02-10 | 1983-08-15 | Hitachi Ltd | Semiconductor memory and its manufacture |
| JPH0376583B2 (en) * | 1982-02-10 | 1991-12-05 | Hitachi Ltd | |
| JPS58154256A (en) * | 1982-03-10 | 1983-09-13 | Hitachi Ltd | Semiconductor memory and preparation thereof |
| JPH0376584B2 (en) * | 1982-03-10 | 1991-12-05 | Hitachi Ltd | |
| JPS5954097A (en) * | 1982-09-22 | 1984-03-28 | Hitachi Ltd | Semiconductor memory device |
| JPS6045054A (en) * | 1983-08-22 | 1985-03-11 | Nec Corp | Manufacture of mis type semiconductor memory device |
| US5017982A (en) * | 1988-11-15 | 1991-05-21 | Mitsubishi Denki Kabushiki Kaisha | Capacitor in semiconductor device |
| JPH02354A (en) * | 1989-02-08 | 1990-01-05 | Hitachi Ltd | Large scale semiconductor memory and its manufacture |
| JPH0426788B2 (en) * | 1989-02-08 | 1992-05-08 | Hitachi Ltd |
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