JPS5519801A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5519801A
JPS5519801A JP9141178A JP9141178A JPS5519801A JP S5519801 A JPS5519801 A JP S5519801A JP 9141178 A JP9141178 A JP 9141178A JP 9141178 A JP9141178 A JP 9141178A JP S5519801 A JPS5519801 A JP S5519801A
Authority
JP
Japan
Prior art keywords
electrode
metal
suface
periphery
spaced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9141178A
Other languages
Japanese (ja)
Inventor
Akinori Ogata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9141178A priority Critical patent/JPS5519801A/en
Publication of JPS5519801A publication Critical patent/JPS5519801A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To protect adhering of insulative material for applying to the side of semiconducter device to the electrode metal by prividing a metal layer on the periphery of the primary main suface and spaced from the-electro metal and in sourrounding manner.
CONSTITUTION: After electrode metal 11k is applied to whole primary main suface, metal layer 11s is provided on the periphery of the main surface and spaced from the electrode 11 by photographic etching. An electrode 11a is provided on the other surface and the sideface of the device is coated with Si resin. At this time, Si resin is obstructed and cannot reach to the elctrode 11k, thus failure of the connection by adhering of the insulative material to the lead of the electrode is evaded.
COPYRIGHT: (C)1980,JPO&Japio
JP9141178A 1978-07-28 1978-07-28 Semiconductor device Pending JPS5519801A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9141178A JPS5519801A (en) 1978-07-28 1978-07-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9141178A JPS5519801A (en) 1978-07-28 1978-07-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5519801A true JPS5519801A (en) 1980-02-12

Family

ID=14025627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9141178A Pending JPS5519801A (en) 1978-07-28 1978-07-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5519801A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587550A (en) * 1980-12-16 1986-05-06 Tokyo Shibaura Denki Kabushiki Kaisha Press-packed semiconductor device with lateral fixing member

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587550A (en) * 1980-12-16 1986-05-06 Tokyo Shibaura Denki Kabushiki Kaisha Press-packed semiconductor device with lateral fixing member

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