JPS5568652A - Manufacturing method of semiconductor film - Google Patents
Manufacturing method of semiconductor filmInfo
- Publication number
- JPS5568652A JPS5568652A JP14116378A JP14116378A JPS5568652A JP S5568652 A JPS5568652 A JP S5568652A JP 14116378 A JP14116378 A JP 14116378A JP 14116378 A JP14116378 A JP 14116378A JP S5568652 A JPS5568652 A JP S5568652A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor film
- amorphous
- single crystal
- harmful substances
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE: To obtain a semiconductor film which contains no harmful substances automatically doped, by providing an amorphous semiconductor film on the surface of an dielectric piece and heating the amorphous semiconductor film to change it into single crystal.
CONSTITUTION: After the surface of a sapphire substrate 1 is cleaned up, SiH4 is made into plasma at a relatively low temperature of about 800°C to produce an amorphous Si film 2. At that temperature, no harmful substances are automatically doped from the substrate 1 into the film 2. The surface of the film is heated like pulsation to change the amorphous Si film 2 into a single crystal Si film 3. No harmful substances such as aluminum are automatically doped from the sapphire into the single crystal Si film 3. Therefore, a leakage current is very little when a pn-junction 4 is provided. SiO2, Si3N4 or the like may be used as a dielectric substance instead of the sapphire.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14116378A JPS5568652A (en) | 1978-11-17 | 1978-11-17 | Manufacturing method of semiconductor film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14116378A JPS5568652A (en) | 1978-11-17 | 1978-11-17 | Manufacturing method of semiconductor film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5568652A true JPS5568652A (en) | 1980-05-23 |
Family
ID=15285592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14116378A Pending JPS5568652A (en) | 1978-11-17 | 1978-11-17 | Manufacturing method of semiconductor film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5568652A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5975670A (en) * | 1982-10-25 | 1984-04-28 | Seiko Epson Corp | Manufacture of thin film semiconductor device |
-
1978
- 1978-11-17 JP JP14116378A patent/JPS5568652A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5975670A (en) * | 1982-10-25 | 1984-04-28 | Seiko Epson Corp | Manufacture of thin film semiconductor device |
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