JPS54109771A - Stabilizing method for surface protective film of semiconductor - Google Patents

Stabilizing method for surface protective film of semiconductor

Info

Publication number
JPS54109771A
JPS54109771A JP1720078A JP1720078A JPS54109771A JP S54109771 A JPS54109771 A JP S54109771A JP 1720078 A JP1720078 A JP 1720078A JP 1720078 A JP1720078 A JP 1720078A JP S54109771 A JPS54109771 A JP S54109771A
Authority
JP
Japan
Prior art keywords
film
substrate
surface protective
heater
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1720078A
Other languages
Japanese (ja)
Inventor
Toru Maekawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1720078A priority Critical patent/JPS54109771A/en
Publication of JPS54109771A publication Critical patent/JPS54109771A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a surface protective film which is stabilized with 1-digit lower interface level than that obtained through oxidation in the dried O2, by coating the Si3N4 film on the semicnductor substrate and then oxidizing the film in the O2 gas atmosphere containing the vapor.
CONSTITUTION: SiO2 film 2 is formed about 1000Å thickness on the surface of Si substrate 1, and then Si3N4 film is coated about 500Å thick on film 2 for a purpose of the alkali ion block. Substrate 24 of such lamination is put into diffusion furnace 25, and the O2 gas which passed through demineralized evaporator 21 kept at about 90°C by heater 22 is sent there furthermore being heated up by heater 23. In this case, substrate 24 is heated previously up to about 1050°C, and about 30- minute heat treatment is given to form silicon nitride oxide film 4. As a result, a reaction is produced between O2 in the water molecule and Si in film 3 to oxidize part of film 3, and the produced H2 molecule is accumulated in film 3 and the Si3N4 film. Thus, the interface level density is lowered for the substrate.
COPYRIGHT: (C)1979,JPO&Japio
JP1720078A 1978-02-16 1978-02-16 Stabilizing method for surface protective film of semiconductor Pending JPS54109771A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1720078A JPS54109771A (en) 1978-02-16 1978-02-16 Stabilizing method for surface protective film of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1720078A JPS54109771A (en) 1978-02-16 1978-02-16 Stabilizing method for surface protective film of semiconductor

Publications (1)

Publication Number Publication Date
JPS54109771A true JPS54109771A (en) 1979-08-28

Family

ID=11937289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1720078A Pending JPS54109771A (en) 1978-02-16 1978-02-16 Stabilizing method for surface protective film of semiconductor

Country Status (1)

Country Link
JP (1) JPS54109771A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5814537A (en) * 1981-07-17 1983-01-27 Nec Corp Manufacture of semiconductor device
JP2007045455A (en) * 2005-08-09 2007-02-22 Nippon Muki Co Ltd Packing structure, packing method, and unpacking method for air filter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5814537A (en) * 1981-07-17 1983-01-27 Nec Corp Manufacture of semiconductor device
JPS6351375B2 (en) * 1981-07-17 1988-10-13 Nippon Electric Co
JP2007045455A (en) * 2005-08-09 2007-02-22 Nippon Muki Co Ltd Packing structure, packing method, and unpacking method for air filter

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