JPH01132128A - Manufacture of silica film - Google Patents
Manufacture of silica filmInfo
- Publication number
- JPH01132128A JPH01132128A JP28931587A JP28931587A JPH01132128A JP H01132128 A JPH01132128 A JP H01132128A JP 28931587 A JP28931587 A JP 28931587A JP 28931587 A JP28931587 A JP 28931587A JP H01132128 A JPH01132128 A JP H01132128A
- Authority
- JP
- Japan
- Prior art keywords
- silica film
- silica
- film
- substrate
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 77
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims 6
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract 3
- 239000011737 fluorine Substances 0.000 claims abstract 3
- 239000007789 gas Substances 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 15
- 238000010438 heat treatment Methods 0.000 abstract description 12
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 238000000280 densification Methods 0.000 abstract description 2
- 238000002955 isolation Methods 0.000 abstract description 2
- 238000005336 cracking Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000006467 substitution reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910002027 silica gel Inorganic materials 0.000 description 3
- 239000000741 silica gel Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 238000001879 gelation Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体基板上に形成したシリカ（ＳｉＯｚ）膜
の加熱処理時の耐クラツク性および耐湿性の向上に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to improving the crack resistance and moisture resistance during heat treatment of a silica (SiOz) film formed on a semiconductor substrate.
ゾルゲル法によりバルクのシリカ（ＳｉＯｚ）を作成す
る過程において、ＨＦを加水分解の解媒として溶液中に
添加すると作成されたシリカのゲルが８００℃以下の熱
処理であまり焼締りを起さないという報告“ジャーナル
・オン・ノン−クリスタル・ソリッズ（ｇ 、 ｏｆ
Ｎｏｎ−Ｃｒｙｓｔ、 ５ｏｌｉｄｓ）。A report that in the process of creating bulk silica (SiOz) using the sol-gel method, when HF is added to the solution as a dissolving medium for hydrolysis, the silica gel created does not cause much sintering compaction when heat treated at 800°C or less. “Journal on Non-Crystal Solids (g, of
Non-Cryst, 5olids).
（８２（１９８６）７８）”がある、これはＨＦがゾル
中での脱水縮合反応を促進するためゲル化後この反応が
起り薙くなる為と考えられる。しかしＨＦ添加液ではゲ
ル化の反応が速い為安定性に劣り、これをＳＯＧ （ス
ピン・オン・グラス：Ｓ ｐｉｎ −Ｏｎ −Ｇ １ａ
ｓｓ）用に転用するのは困難であった。(82 (1986) 78)". This is thought to be because HF promotes the dehydration condensation reaction in the sol, and this reaction occurs after gelation, resulting in a meltdown. However, in the HF-added solution, the gelation reaction Because it is fast, it is less stable, and this is called SOG (Spin-On-G 1a).
ss) was difficult to convert to other uses.
つぎに、Ｆを含むガスのプラズマを用いてＳｉやＳｉＯ
２をエツチングする方法は現在広く行われている１′ジ
ヤーナル・オン・エレクトロケミカル・ソサエティー（
Ｊ 、 Ｅｌｅｃｔｒｏｃｈｅｍ、 Ｓａｃ、） （
１２９（１９８２）１７７０）”、しかし、Ｆをシリカ
中にドープする為にこの方法を用いた例は見当らない。Next, using plasma of gas containing F, Si and SiO
The method for etching 2 is the 1' Journal on Electrochemical Society (1'), which is currently widely used.
J, Electrochem, Sac,) (
129 (1982) 1770)'', however, there are no examples of using this method to dope F into silica.
また、ゾルゲル法で作成したシリカゲルをＳＦｓ気流中
で１３００〜１５００℃に加熱することによりグラスフ
ァイバー用Ｓ ｉ ＯｚにＦをドープする試み“ジャパ
ニーズ・ジャーナル・オン・アプライド・フィジックス
（Ｊ 、 Ｊ 、 ｏｆ Ａｐｐｌ Ｐｈｙｓ、） 。In addition, an attempt was made to dope F into SiOz for glass fibers by heating silica gel prepared by the sol-gel method to 1300-1500°C in an SFs airflow, “Japanese Journal on Applied Physics (J, J, of Appl Phys, ).
（２５，Ｎα１１ （１９８６）Ｌ９０２”も行なわれ
ている。この場合Ｆドープの反応温度が１２００℃以上
と高く、Ｓｉデバイスの絶縁膜の処理には適さない。(25, Nα11 (1986) L902'' has also been carried out. In this case, the reaction temperature of F doping is as high as 1200° C. or more, and it is not suitable for processing an insulating film of a Si device.
半導体装置の層間絶縁やパッシベーションのために用い
るシリカ膜はりフロー温度を下げたり、その熱膨張係数
を大きくして、基板材料のＳｉや配線材料のＡＱのそれ
に近づける事によりクラックの発生を防ぐためにＰやＢ
等の元素を添加する。Silica film used for interlayer insulation and passivation of semiconductor devices is used to prevent cracks by lowering the flow temperature and increasing its thermal expansion coefficient to approach that of Si for the substrate material and AQ for the wiring material. YaB
Add elements such as
しかし、これらの元素の酸化物が強い吸湿性を持つため
か、これらの元素を添加したシリカは耐湿性に劣り、し
ばしばこれを用いた半導体装置の特性劣化の原因となっ
ている。However, perhaps because oxides of these elements have strong hygroscopic properties, silica to which these elements are added has poor moisture resistance, which often causes deterioration in the characteristics of semiconductor devices using them.
特にＳｉの有機化合物の溶液を塗布・加熱してガラス膜
とする塗布型ガラス（ＳＯＧ）膜においては上記の問題
点に加え、ガラス化に際して、収縮が起こり、これがク
ラック発生の原因となるためあまり厚いＳＯＧ膜は形成
できないという問題点もあった。In particular, in coated glass (SOG) films, in which a solution of an organic compound of Si is applied and heated to form a glass film, in addition to the above-mentioned problems, shrinkage occurs during vitrification, which causes cracks to form. Another problem was that a thick SOG film could not be formed.
本発明の目的は以上のようなシリカ膜の耐湿性と耐クラ
ツク性を改善する事にある。The object of the present invention is to improve the moisture resistance and crack resistance of the silica film as described above.
上記目的はシリカ膜をＦを含むガスの雰囲気中に置き、
シリカ膜に紫外線を照射することにより達成される。The above purpose is to place a silica membrane in an atmosphere of gas containing F,
This is achieved by irradiating the silica film with ultraviolet light.
上記紫外線照射の際に膜を徐々に加熱する事により、反
応が促進される。The reaction is accelerated by gradually heating the film during the ultraviolet irradiation.
加熱方法としては、赤外線レーザや赤外線ランプにより
、シリカ膜を選択的に膜底部から加熱する方法が優れて
いる。An excellent heating method is to selectively heat the silica film from the bottom using an infrared laser or an infrared lamp.
また、上記ガスに酸素を混合することにより。Also, by mixing oxygen with the above gas.
シリカ膜の膜厚減少を防ぐことができる。A reduction in the thickness of the silica film can be prevented.
さらに、雰囲気ガス中の水分濃度を低下させるために乾
燥ガスを用いるとＦ置換反応の生成物である水分の膜か
らの離脱が加速される。Furthermore, when a dry gas is used to reduce the moisture concentration in the atmospheric gas, the separation of moisture, which is a product of the F substitution reaction, from the film is accelerated.
また、雰囲気ガスの気圧を１気圧より減圧することによ
りＦ置換反応を加速する事ができる。Moreover, the F substitution reaction can be accelerated by reducing the atmospheric pressure of the atmospheric gas from 1 atm.
本発明で目的としているＦドープはシリカ膜の０原子を
Ｆ原子で置換するのではなく、シリカ表面に多数存在す
るＯＨ基をＦ原子で置換する事により達成される。前で
述べたようにゾルゲル法により得られたシリカゲルをＳ
Ｆｏを含むガス気流中で１２００℃以上に加熱する事に
よりＦをドープする技術は知られているが、この場合に
はＦドープの時点では高温加熱のためほとんどのＯＨ基
はすでに失なわれていると考えられる。従ってこの場合
のＦドープはＯを置換する事により達成されていると考
えられるので本発明の目的には適さない。F doping, which is the object of the present invention, is achieved not by replacing zero atoms in the silica film with F atoms, but by replacing many OH groups present on the silica surface with F atoms. As mentioned earlier, the silica gel obtained by the sol-gel method was
A technique to dope F by heating to 1200°C or higher in a gas stream containing Fo is known, but in this case, most of the OH groups have already been lost due to the high temperature heating at the time of F doping. It is thought that there are. Therefore, F doping in this case is considered to be achieved by substituting O, and is therefore not suitable for the purpose of the present invention.
一方、低温のシリカ膜にＦをドープする方法としてＦ含
有ガスのプラズマにシリカ膜を晒す方法がある。Ｆ含有
ガスとしてはＣＦ ４ ＠ ＨＦ ｇ ＣｚＦｓ ＋Ｎ
Ｆａ等の炭素、水素、窒素の弗化物の他にＣＱやＳを含
んだＣＣＱ Ｆ ｓやＳＦｅさらにはＢＦａ。On the other hand, as a method of doping a low-temperature silica film with F, there is a method of exposing the silica film to plasma of an F-containing gas. As F-containing gas, CF 4 @ HF g CzFs +N
In addition to fluorides of carbon, hydrogen, and nitrogen such as Fa, CCQ F s and SFe containing CQ and S, as well as BFa.
ＰＦＦＩ等がある。このようなガスのプラズマはＳｉや
シリカのエツチング用ガスとしと使用されている事から
も分るように、５ｉｆｔの膜厚減少の原因となっている
。これはＣの介在や高エネルギのＦイオンにより５ｉｎ
ｓ中の０とＦの置換が起るからである。この０置換を極
力防止し、ＯＨとＦとの置換反応を効率良く行うために
はＦを弱くイオン化する必要がある。このためにＦを含
むガス雰囲気中のシリカ膜に紫外線を照射する。この方
法によりＦの電離エネルギを必要最小限にとどめる事が
可能となる。There are PFFI, etc. As can be seen from the fact that such gas plasma is often used as an etching gas for Si and silica, it causes a reduction in film thickness of 5ift. This is due to the intervention of C and high energy F ions.
This is because substitution of 0 and F in s occurs. In order to prevent this zero substitution as much as possible and to perform the substitution reaction between OH and F efficiently, it is necessary to weakly ionize F. For this purpose, the silica film in a gas atmosphere containing F is irradiated with ultraviolet rays. This method makes it possible to keep the ionization energy of F to the necessary minimum.
ここで、上記の反応は膜を加熱しなくとも進行するが、
乾燥雰囲気中で１００℃以上に加熱することにより、反
応生成物である水を膜から離脱せしめる作用を促進し、
その結果としてＦのドーピングの反応を促進することが
できる。Here, although the above reaction proceeds without heating the membrane,
By heating to 100°C or higher in a dry atmosphere, the action of separating water, which is a reaction product, from the membrane is promoted,
As a result, the F doping reaction can be promoted.
また、Ｆを含むガス雰囲気中でシリカ膜に紫外線を照射
しなからシリカ膜を徐々に加熱して最終ベーク温度まで
昇温する方法も有効である。It is also effective to gradually heat the silica film to the final baking temperature without irradiating the silica film with ultraviolet rays in a gas atmosphere containing F.
さらに、雰囲気中の０２の濃度を増す事により、ＦとＯ
の置換反応を抑制する事ができる。Furthermore, by increasing the concentration of 02 in the atmosphere, F and O
The substitution reaction of can be suppressed.
以下、実施例により本発明の詳細な説明する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
実施例１
シリコン基板に幅１μｍ、深さ２μｍの溝を形成し、東
京応化工業（株）社製の０ＣＤＰ−４８３４０（ＳｉＯ
ａ成分４．８ｗｔ％、ＰｚＯｓｏ、４ｇ ／ １００
ｍ Ｑ ）を塗布した。Example 1 A groove with a width of 1 μm and a depth of 2 μm was formed on a silicon substrate, and a groove was formed using 0CDP-48340 (SiO
A component 4.8wt%, PzOso, 4g/100
mQ) was applied.
ＳＦｅ、あるいはＨＦあるいはＦ２とＯｚの混合気体（
０２３０％）気流中で紫外線ランプで基板表面を照射し
、赤外線ランプで裏面を照射して５００℃まで加熱した
。加熱速度を遅くするために赤外線照射は間歇的に行な
った。昇温速度は１０℃／分である。上記の工程を４回
繰返して、深さ２μｍの溝を完全に充填した。その後、
Ｎ２中９００℃まで加熱して緻密化処理を行なった０以
上の方法によりＳＯＧによるクラックのない深溝の充填
が可能となった。このＳＯＧ充填の深溝をアイソレーシ
ョンとしてシリコン基板にＭＯＳデバイスを作成した。SFe, or HF or a mixture of F2 and Oz (
0230%) In an air stream, the front surface of the substrate was irradiated with an ultraviolet lamp, and the back surface was irradiated with an infrared lamp and heated to 500°C. Infrared irradiation was performed intermittently to slow down the heating rate. The temperature increase rate is 10°C/min. The above process was repeated four times to completely fill the 2 μm deep groove. after that,
The method described above, in which densification treatment was performed by heating to 900° C. in N2, made it possible to fill deep grooves without cracks with SOG. A MOS device was fabricated on a silicon substrate using this SOG-filled deep groove as isolation.
実施例２
Ｓｉ基板上に熱酸化５ｉＯｚ膜を形成し、ＡＱ導体層を
設置し、パターン化処理後、プラズマＣＶＤ法によるＰ
ＳＧ膜を厚さ０．２μｍｉ９［し、その上に実施例１と
同様のＯＣＤ塗布液を平坦部膜厚が０．２μｍとなる条
件でスピン塗布した。Example 2 A thermally oxidized 5iOz film was formed on a Si substrate, an AQ conductor layer was placed, and after patterning, P was deposited by plasma CVD.
The SG film was formed to a thickness of 0.2 μm, and the same OCD coating solution as in Example 1 was spin-coated thereon under conditions such that the film thickness at the flat portion was 0.2 μm.
上記処理をしたＳｉ基板をサセプタ上に置き、高周波誘
導法により加熱した。雰囲気はＣＦ４と０ｘ（Ｏｚ４０
％）との混合気体気流である。紫外線レーザにより表面
を照射した。室温から徐々の昇温（２０℃／分）し、４
５０℃まで加熱し、その温度に３０分保持した。さらに
その上部に厚さ０．２μｍのプラズマＣＶＤ法によるＰ
ＳＧ膜を形成した。上記３層のシリカ膜を層間絶縁膜と
して用いその上に第２層のＡＱ配線層を設置した。The Si substrate treated as described above was placed on a susceptor and heated by high frequency induction method. The atmosphere is CF4 and 0x (Oz40
%) is a mixed gas flow. The surface was irradiated with an ultraviolet laser. Gradually raise the temperature (20°C/min) from room temperature, and
It was heated to 50°C and held at that temperature for 30 minutes. Furthermore, on top of that, a P layer with a thickness of 0.2 μm is made by plasma CVD method.
An SG film was formed. The three layers of silica films were used as interlayer insulating films, and a second AQ wiring layer was placed thereon.
以上の方法により、電気特性に優れた、クラックのない
層間絶縁膜を形成する事ができた。By the above method, it was possible to form a crack-free interlayer insulating film with excellent electrical properties.
上記実施例は主にＳＯＧ膜の耐湿性、耐クラツク性に注
目した検討結果であるが、他の方法で作製したシリカ膜
においても同様の検討を行い、同様の効果がある事を確
認した。特にＰＳＧ、ＢＰＳＧの耐湿性改善効果は著し
い。Although the above examples are the results of studies focusing mainly on the moisture resistance and crack resistance of the SOG film, similar studies were conducted on silica films prepared by other methods, and it was confirmed that similar effects were obtained. In particular, the moisture resistance improvement effect of PSG and BPSG is remarkable.
Claims (5)
減圧下のガス雰囲気中で該シリカ膜に紫外線を照射する
事を特徴とするシリカ膜の製造法。1. A method for producing a silica film, which comprises forming a silica film on a substrate and then irradiating the silica film with ultraviolet rays in a gas atmosphere containing fluorine at normal pressure or reduced pressure.
徴とする特許請求の範囲第１項記載のシリカ膜の製造法
。2. A method for producing a silica film according to claim 1, characterized in that the silica film is heated to a temperature of 1000° C. or less.
射加熱する事を特徴とする特許請求の範囲第２項記載の
シリカ膜の製造法。3. 3. The method for producing a silica film according to claim 2, wherein the silica film is irradiated and heated through a substrate using infrared rays as a heat source.
特許請求の範囲第１乃至第３項記載のシリカ膜の製造法
。4. A method for producing a silica film according to any one of claims 1 to 3, characterized in that oxygen is mixed with a gas containing fluorine.
る特許請求の範囲第１乃至第４項記載のシリカ膜の製造
法。5. A method for producing a silica film according to any one of claims 1 to 4, characterized in that a coated glass film is used as the silica film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28931587A JPH01132128A (en) | 1987-11-18 | 1987-11-18 | Manufacture of silica film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28931587A JPH01132128A (en) | 1987-11-18 | 1987-11-18 | Manufacture of silica film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01132128A true JPH01132128A (en) | 1989-05-24 |
Family
ID=17741595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28931587A Pending JPH01132128A (en) | 1987-11-18 | 1987-11-18 | Manufacture of silica film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01132128A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0226053A (en) * | 1988-07-14 | 1990-01-29 | Matsushita Electron Corp | Manufacture of semiconductor device |
| JPH0274779A (en) * | 1988-09-10 | 1990-03-14 | Toyo Sash Co Ltd | Door with curtain |
| US5763329A (en) * | 1996-01-26 | 1998-06-09 | Nec Corporation | Method for making semiconductor device by coating an SOG film in amine gas atmosphere |
| WO2014080841A1 (en) * | 2012-11-22 | 2014-05-30 | Ａｚエレクトロニックマテリアルズマニュファクチャリング株式会社 | Method for forming of siliceous film and siliceous film formed using same |
-
1987
- 1987-11-18 JP JP28931587A patent/JPH01132128A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0226053A (en) * | 1988-07-14 | 1990-01-29 | Matsushita Electron Corp | Manufacture of semiconductor device |
| JPH0274779A (en) * | 1988-09-10 | 1990-03-14 | Toyo Sash Co Ltd | Door with curtain |
| US5763329A (en) * | 1996-01-26 | 1998-06-09 | Nec Corporation | Method for making semiconductor device by coating an SOG film in amine gas atmosphere |
| WO2014080841A1 (en) * | 2012-11-22 | 2014-05-30 | Ａｚエレクトロニックマテリアルズマニュファクチャリング株式会社 | Method for forming of siliceous film and siliceous film formed using same |
| JP2014103351A (en) * | 2012-11-22 | 2014-06-05 | Az Electronic Materials Mfg Co Ltd | Method for forming siliceous film, and siliceous film formed by the same |
| CN104885204A (en) * | 2012-11-22 | 2015-09-02 | Az电子材料（卢森堡）有限公司 | Method for forming of siliceous film and siliceous film formed using same |
| CN104885204B (en) * | 2012-11-22 | 2017-04-12 | Az电子材料（卢森堡）有限公司 | Method for forming of siliceous film and siliceous film formed using same |
| TWI600614B (en) * | 2012-11-22 | 2017-10-01 | Ａｚ電子材料盧森堡有限公司 | Method of forming siliceous film and the siliceous film formed by using the method thereof |
| US10000386B2 (en) | 2012-11-22 | 2018-06-19 | AZ Electronic Materials (Luxembourg) S.à.r.l. | Method for forming of siliceous film and siliceous film formed using same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100454618B1 (en) | Hardening Method of Hydrogen Silsesquioxane Resin by Electron Beam | |
| KR100658393B1 (en) | Nanoporous silica dielectric films modified by electron beam exposure and having low dielectric constant and low water content | |
| KR940009599B1 (en) | Forming method of inter-dielectric film for semiconductor device | |
| US6699797B1 (en) | Method of fabrication of low dielectric constant porous metal silicate films | |
| US6559071B2 (en) | Process for producing dielectric thin films | |
| US20050272220A1 (en) | Ultraviolet curing process for spin-on dielectric materials used in pre-metal and/or shallow trench isolation applications | |
| CN101194344A (en) | UV curing process for spin-on dielectric materials used in pre-metal and/or shallow trench isolation applications | |
| JPH04360533A (en) | Chemical vapor deposition method | |
| KR880001029A (en) | Integrated Circuit Multilayer Interconnect Device and Method | |
| KR20030034054A (en) | Plasma processing for porous silica thin film | |
| EP1265813A2 (en) | Plasma processing for porous silica thin film | |
| US5629246A (en) | Method for forming fluorine-doped glass having low concentrations of free fluorine | |
| US20030062600A1 (en) | Process for optimizing mechanical strength of nanoporous silica | |
| JPH01199678A (en) | Formation of high purity thin sio2 film | |
| US4406053A (en) | Process for manufacturing a semiconductor device having a non-porous passivation layer | |
| JPH01132128A (en) | Manufacture of silica film | |
| JPH1092804A (en) | Manufacture of porous dielectric film | |
| US4420503A (en) | Low temperature elevated pressure glass flow/re-flow process | |
| JPH09275102A (en) | Formation of insulating film | |
| JP2691565B2 (en) | Silicon oxide film modification method | |
| JPH0316129A (en) | Generation of silicon nitride film | |
| JP2739788B2 (en) | Insulating film processing method for semiconductor device | |
| JPH0950995A (en) | Silicon-based oxide and interlayer insulating film for semiconductor device | |
| JPH04174520A (en) | Stabilizing method for sog film | |
| SU1711269A1 (en) | Method of producing interlayer insulation in production of integral microcircuits |