JPS57208182A - Manufacture of phtoelectric converter - Google Patents
Manufacture of phtoelectric converterInfo
- Publication number
- JPS57208182A JPS57208182A JP56094207A JP9420781A JPS57208182A JP S57208182 A JPS57208182 A JP S57208182A JP 56094207 A JP56094207 A JP 56094207A JP 9420781 A JP9420781 A JP 9420781A JP S57208182 A JPS57208182 A JP S57208182A
- Authority
- JP
- Japan
- Prior art keywords
- film
- reflection preventive
- layer
- preventive film
- electrode material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000003449 preventive effect Effects 0.000 abstract 4
- 239000007772 electrode material Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000035699 permeability Effects 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To uniformly form the permeability and refractive index of a reflection preventive film by forming selectively an electrode material on a reflection preventive film, then heat treating it to immerse the electrode material in the reflection preventive film to connect it to an impurity layer. CONSTITUTION:The silicon of a substrate semiconductor 1 is thermally oxidized, the oxidized film 3 is then selectively retained, and impurity layers 4, 5 are formed at the other part. A reflection preventive film 6 is covered on the upper surface of the layer 5, is then prebaked, a material of aluminum electrode 10 is covered on the upper surface, is then dried, is heated at approx. 400-800 deg.C to diffuse part of the electrode material through the film 6 to the surface of the layer 5 of the substrate 1. An alloy of the film 6 and the material 10 is formed by this diffusion as a barrier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56094207A JPS57208182A (en) | 1981-06-17 | 1981-06-17 | Manufacture of phtoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56094207A JPS57208182A (en) | 1981-06-17 | 1981-06-17 | Manufacture of phtoelectric converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57208182A true JPS57208182A (en) | 1982-12-21 |
Family
ID=14103855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56094207A Pending JPS57208182A (en) | 1981-06-17 | 1981-06-17 | Manufacture of phtoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57208182A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59195879A (en) * | 1983-04-21 | 1984-11-07 | Fuji Electric Co Ltd | Amorphous silicon solar cell |
| JPS60140881A (en) * | 1983-12-28 | 1985-07-25 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS60140883A (en) * | 1983-12-28 | 1985-07-25 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS60140882A (en) * | 1983-12-28 | 1985-07-25 | Hitachi Ltd | Paste material for manufacture of semiconductor |
| DE3516117A1 (en) * | 1985-05-04 | 1986-11-06 | Telefunken electronic GmbH, 7100 Heilbronn | SOLAR CELL |
| WO1989008328A1 (en) * | 1988-03-05 | 1989-09-08 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Fabrication method for semiconductor device and film formation apparatus for said method |
-
1981
- 1981-06-17 JP JP56094207A patent/JPS57208182A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59195879A (en) * | 1983-04-21 | 1984-11-07 | Fuji Electric Co Ltd | Amorphous silicon solar cell |
| JPS60140881A (en) * | 1983-12-28 | 1985-07-25 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS60140883A (en) * | 1983-12-28 | 1985-07-25 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS60140882A (en) * | 1983-12-28 | 1985-07-25 | Hitachi Ltd | Paste material for manufacture of semiconductor |
| JPH0518268B2 (en) * | 1983-12-28 | 1993-03-11 | Hitachi Ltd | |
| DE3516117A1 (en) * | 1985-05-04 | 1986-11-06 | Telefunken electronic GmbH, 7100 Heilbronn | SOLAR CELL |
| WO1989008328A1 (en) * | 1988-03-05 | 1989-09-08 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Fabrication method for semiconductor device and film formation apparatus for said method |
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