JPS54150970A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54150970A JPS54150970A JP5962778A JP5962778A JPS54150970A JP S54150970 A JPS54150970 A JP S54150970A JP 5962778 A JP5962778 A JP 5962778A JP 5962778 A JP5962778 A JP 5962778A JP S54150970 A JPS54150970 A JP S54150970A
- Authority
- JP
- Japan
- Prior art keywords
- film
- diffusion
- sio
- substrate
- abnormal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To avoid the abnormal diffusion such as penetration or the like when Sb is diffued selectively onto the Si substrate by covering the areas excluding the diffusion part with the Si3N4 film or the lamination film composed of the lower layer of SiO2 and the upper layer of Si3N4 each.
CONSTITUTION: The SiO2 film is used for the mask when giving the selective diffusion of Sb onto Si substrate 1. In this case, the Sb glass and the SiO2 film are fused together when the Sb amount in the Sb gas exceeds a certain level, an thus Sb penetrates the SiO2 film to cause the abnormal diffusion. In this connection, the Si3N4 film is used for the mask, and the Si3N4 film is liminated on the SiO2 film, when used, to prevent the abnormal diffusion. In other words, SiO2 film 2 and Si3N4 film 3 are coated on Si substrate 1, and opening 4 is provided opposing to the diffusion part. Then Sb glass layer 5 is formed on the entire surface through the solid diffusion or the coating diffusion, and the heat treatment is given in the atmosphere using N2 gas mainly to from diffusion region 6.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5962778A JPS54150970A (en) | 1978-05-18 | 1978-05-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5962778A JPS54150970A (en) | 1978-05-18 | 1978-05-18 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54150970A true JPS54150970A (en) | 1979-11-27 |
Family
ID=13118651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5962778A Pending JPS54150970A (en) | 1978-05-18 | 1978-05-18 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54150970A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5023203A (en) * | 1988-07-28 | 1991-06-11 | Korea Electronics & Telecommunications Research Institute Et Al. | Method of patterning fine line width semiconductor topology using a spacer |
-
1978
- 1978-05-18 JP JP5962778A patent/JPS54150970A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5023203A (en) * | 1988-07-28 | 1991-06-11 | Korea Electronics & Telecommunications Research Institute Et Al. | Method of patterning fine line width semiconductor topology using a spacer |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5555559A (en) | Method of fabricating semiconductor device | |
JPS54150970A (en) | Manufacture of semiconductor device | |
JPS5331964A (en) | Production of semiconductor substrates | |
JPS52131484A (en) | Semiconductor device | |
JPS57208182A (en) | Manufacture of phtoelectric converter | |
JPS5593251A (en) | Manufacture of semiconductor device | |
JPS5420671A (en) | Production of semiconductor devices | |
JPS54133088A (en) | Semiconductor device | |
JPS5270762A (en) | Electrode formation method of semiconductor element | |
JPS56148825A (en) | Manufacture of semiconductor device | |
JPS55110056A (en) | Semiconductor device | |
JPS5742146A (en) | Manufacture of semiconductor device | |
JPS5376A (en) | Manufacture of semiconductor device | |
JPS543470A (en) | Etching method | |
JPS5380184A (en) | Manufacture of semiconductor device | |
JPS547867A (en) | Manufacture for semiconductor device | |
JPS5267971A (en) | Manufacture of integrated circuit wafer | |
JPS5546577A (en) | Method of fabricating semicondcutor device | |
JPS5295975A (en) | Prevention of leak of impurity in manufacturing semiconductor unit | |
JPS5315775A (en) | Production of mos type semiconductor device | |
JPS5519880A (en) | Manufacturing method of semiconductor device | |
JPS5272171A (en) | Production of semiconductor device | |
JPS5247370A (en) | Diffusion method | |
JPS55156327A (en) | Manufacture for semiconductor | |
JPS55127062A (en) | Semiconductor device |