JPS5496361A - Manufacture of semiconductor element - Google Patents
Manufacture of semiconductor elementInfo
- Publication number
- JPS5496361A JPS5496361A JP276478A JP276478A JPS5496361A JP S5496361 A JPS5496361 A JP S5496361A JP 276478 A JP276478 A JP 276478A JP 276478 A JP276478 A JP 276478A JP S5496361 A JPS5496361 A JP S5496361A
- Authority
- JP
- Japan
- Prior art keywords
- sintering
- silicon wafer
- film
- detouring
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To form the sintering layer at a low temperature and thus to prevent the detouring diffusion of the aluminum to other regions by stacking with heating the aluminum containing silicon onto the main surface of the silicon wafer.
CONSTITUTION: In case the P-type conductive isolation region is formed piercing through the both main surfaces of the silicon wafer, evaporation film 13 of Al-Si alloy (Si composition: 11.7W30 wt%) which is diffused at 850°C or less is provided on the upper and lower main surfaces 12a and 12b of silicon wafer 11. Then film 13 is left through the photo etching only at the isolation region. After this, the sintering is given at about 900°C to form sintering layer 14 of Si (β solid solution) containing Al, and then the extra film 13 is removed through etching. Then diffusion region 15 is formed through the heat treament of about 1200°C. Thus, the detouring of Al to other regions can be prevented by lowering the sintering temperature.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP276478A JPS6054774B2 (en) | 1978-01-17 | 1978-01-17 | Manufacturing method of semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP276478A JPS6054774B2 (en) | 1978-01-17 | 1978-01-17 | Manufacturing method of semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5496361A true JPS5496361A (en) | 1979-07-30 |
JPS6054774B2 JPS6054774B2 (en) | 1985-12-02 |
Family
ID=11538397
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP276478A Expired JPS6054774B2 (en) | 1978-01-17 | 1978-01-17 | Manufacturing method of semiconductor devices |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6054774B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60167160U (en) * | 1984-04-16 | 1985-11-06 | 国産電機株式会社 | Ignition system for internal combustion engines with vehicle speed limiting circuit |
JPS62169264U (en) * | 1986-04-18 | 1987-10-27 |
-
1978
- 1978-01-17 JP JP276478A patent/JPS6054774B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS6054774B2 (en) | 1985-12-02 |
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