JPS5496361A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS5496361A
JPS5496361A JP276478A JP276478A JPS5496361A JP S5496361 A JPS5496361 A JP S5496361A JP 276478 A JP276478 A JP 276478A JP 276478 A JP276478 A JP 276478A JP S5496361 A JPS5496361 A JP S5496361A
Authority
JP
Japan
Prior art keywords
sintering
silicon wafer
film
detouring
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP276478A
Other languages
Japanese (ja)
Other versions
JPS6054774B2 (en
Inventor
Shigeru Kokuuchi
Masao Tsuruoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP276478A priority Critical patent/JPS6054774B2/en
Publication of JPS5496361A publication Critical patent/JPS5496361A/en
Publication of JPS6054774B2 publication Critical patent/JPS6054774B2/en
Expired legal-status Critical Current

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  • Element Separation (AREA)

Abstract

PURPOSE: To form the sintering layer at a low temperature and thus to prevent the detouring diffusion of the aluminum to other regions by stacking with heating the aluminum containing silicon onto the main surface of the silicon wafer.
CONSTITUTION: In case the P-type conductive isolation region is formed piercing through the both main surfaces of the silicon wafer, evaporation film 13 of Al-Si alloy (Si composition: 11.7W30 wt%) which is diffused at 850°C or less is provided on the upper and lower main surfaces 12a and 12b of silicon wafer 11. Then film 13 is left through the photo etching only at the isolation region. After this, the sintering is given at about 900°C to form sintering layer 14 of Si (β solid solution) containing Al, and then the extra film 13 is removed through etching. Then diffusion region 15 is formed through the heat treament of about 1200°C. Thus, the detouring of Al to other regions can be prevented by lowering the sintering temperature.
COPYRIGHT: (C)1979,JPO&Japio
JP276478A 1978-01-17 1978-01-17 Manufacturing method of semiconductor devices Expired JPS6054774B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP276478A JPS6054774B2 (en) 1978-01-17 1978-01-17 Manufacturing method of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP276478A JPS6054774B2 (en) 1978-01-17 1978-01-17 Manufacturing method of semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5496361A true JPS5496361A (en) 1979-07-30
JPS6054774B2 JPS6054774B2 (en) 1985-12-02

Family

ID=11538397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP276478A Expired JPS6054774B2 (en) 1978-01-17 1978-01-17 Manufacturing method of semiconductor devices

Country Status (1)

Country Link
JP (1) JPS6054774B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167160U (en) * 1984-04-16 1985-11-06 国産電機株式会社 Ignition system for internal combustion engines with vehicle speed limiting circuit
JPS62169264U (en) * 1986-04-18 1987-10-27

Also Published As

Publication number Publication date
JPS6054774B2 (en) 1985-12-02

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