JPS52137275A - Separation of semiconductor elements - Google Patents

Separation of semiconductor elements

Info

Publication number
JPS52137275A
JPS52137275A JP5328176A JP5328176A JPS52137275A JP S52137275 A JPS52137275 A JP S52137275A JP 5328176 A JP5328176 A JP 5328176A JP 5328176 A JP5328176 A JP 5328176A JP S52137275 A JPS52137275 A JP S52137275A
Authority
JP
Japan
Prior art keywords
separation
semiconductor elements
oxide film
layer
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5328176A
Other languages
Japanese (ja)
Inventor
Hideo Sunami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5328176A priority Critical patent/JPS52137275A/en
Publication of JPS52137275A publication Critical patent/JPS52137275A/en
Pending legal-status Critical Current

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  • Element Separation (AREA)

Abstract

PURPOSE: To use an oxide film thicker than a silicon substrate containing less than 1018/cm3 for the separation of semiconductor elements by forming a layer having a higher impurity concentration, i.e., containing more than 1018/ cm3 of impurities of the same or reverse conduction type as or to that of the substrate and oxidizing thermally the layer to form said oxide film.
COPYRIGHT: (C)1977,JPO&Japio
JP5328176A 1976-05-12 1976-05-12 Separation of semiconductor elements Pending JPS52137275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5328176A JPS52137275A (en) 1976-05-12 1976-05-12 Separation of semiconductor elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5328176A JPS52137275A (en) 1976-05-12 1976-05-12 Separation of semiconductor elements

Publications (1)

Publication Number Publication Date
JPS52137275A true JPS52137275A (en) 1977-11-16

Family

ID=12938346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5328176A Pending JPS52137275A (en) 1976-05-12 1976-05-12 Separation of semiconductor elements

Country Status (1)

Country Link
JP (1) JPS52137275A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01259538A (en) * 1988-04-11 1989-10-17 Agency Of Ind Science & Technol Formation of oxide film
US6664120B1 (en) * 2001-12-17 2003-12-16 Cypress Semiconductor Corp. Method and structure for determining a concentration profile of an impurity within a semiconductor layer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01259538A (en) * 1988-04-11 1989-10-17 Agency Of Ind Science & Technol Formation of oxide film
US6664120B1 (en) * 2001-12-17 2003-12-16 Cypress Semiconductor Corp. Method and structure for determining a concentration profile of an impurity within a semiconductor layer
US6905893B1 (en) * 2001-12-17 2005-06-14 Cypress Semiconductor Corp. Method and structure for determining a concentration profile of an impurity within a semiconductor layer

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